Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

PtRuO/Ti anodes with a varying Pt:Ru ratio for direct methanol fuel cells

PtRuO/Ti anodes with a varying Pt:Ru ratio were prepared by thermal deposition of a PtRuO catalyst layer onto a Ti mesh for the direct methanol fuel cell (DMFC). The morphology and structure of the catalyst layers were analyzed by SEM, EDX, and XRD. The catalyst coating layers became porous with increase of the Ru content, and showed oxide and alloy characteristics. The relative activities of the PtRuO/Ti electrodes were assessed and compared using half-cell tests and single DMFC experiments. The results showed that these electrodes were very active for the methanol oxidation and that the optimum Ru surface coverage was ca. 38% for a DMFC operating at 20-60 °C. © 2006 Elsevier B.V. All rights reserved.

Preparation and characterization of new anodes based on Ti mesh for direct methanol fuel cells

A novel anode structure based on Ti mesh for the direct methanol fuel cell (DMFC) has been prepared by thermal deposition of ~5 µm PtRuO2 catalyst layer on ~50 µm Ti mesh. The preparation procedures and the main characteristics of the anode were studied by half-cell testing, scanning electron microscopy analysis, energy-dispersive X-ray measurement, and single-cell testing. The optimum calcination temperature is 450°C, calcination time is 90- 120 min, PtRuO2 catalyst loading is 5.0 mg cm-2, Pt precursor concentration range of solution is 0.14- 0.4 M, and solution aging time is 1 day. The performances of the anodes prepared using the solution kept within 20 days showed no significant difference. When it was used in DMFC feed with low-concentration methanol solution at 90°C, this new anode shows better performance than that of the conventional anode, because its thin hydrophilic structure is a benefit to the transport of methanol and carbon dioxide. However, due to its opening structure, when higher concentration methanol was employed, the performance of the cell with new anode became worse. © 2006 The Electrochemical Society. All rights reserved.

Microstructural characteristics and electrochemical behavior of Co3O4 sintered electrodes

Co3O4 can be used as electrocatalyst for oxygen evolution reaction. The macro and microstructure of the oxide, obtained by compacting and sintering lithium-doped Co3O4 powder in atmosphere of dry air and in conditions of controlled temperature and time was analyzed by metallographic techniques. The porous material was characterized by XRD, SEM and EDS combined techniques. For working temperatures up to 1200°C, the pellet was consituted of particles with varying sizes over a wide range of particle size and, at higher temperatures CoO is formed and polymorphic transformation was observed. The materials were also characterized electrochemically in alkaline media by open circuit potential and potentiodynamic I/E measurements. The results were compared to those previously prepared by others by thermal deposition.

Recuperação de componentes de metal duro por projeção térmica

The main objective of this work is the development of a hardmetal components (WC-6%Co) recovery method by thermal deposition process. The thermal deposition technique used was HVOF (high velocity oxygen-fuel). The HVOF enables depositions of thick coatings (100-500 µm) with low porosity levels, high hardness and excellent adhesion. Before deposition, hardmetal samples with different geometries (plates and cylinders) were finished in order to have different roughness. The influence of these parameters in adhesion was studied. After this step, different re-sintering temperatures were used, in order to determine which one allows to obtain the maxima densification, elements distribution and metallurgical bonding. The re-sintering promotes the densification of the coating, with an increase of its hardness and metallurgical bonding formation. The inclusion of an intermetallic layer was tested along with different layer parameters. In liquid phase sintering (1383 and 1455 ºC) a complete densification of the coating occurred, while a bonding between the substrate and the coating only partially happened. The results of SEM/EDS show low levels of porosity and a complete and uniform distribution of the elements of the alloy. The cylindrical samples without intermetallic layer showed the lowest level of porosity and best metallurgical bonding. When the substrate surface was polished (Ra = 0.05 mm) lower levels of porosity and greater metallurgical bonding were found for both geometries. Taking into account the results obtained in this study, we can conclude that the implementation of this process is appropriate for cylindrical components with a polished surface. In these components the intermetallic layer is unnecessary and punctual defects like pores can be repaired with this process.

Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

Abstract: We report the growth and the electron cyclotron resonance measurements of n-type Si/Si0.62Ge0.38 and Si0.94Ge0.06/Si0.62Ge0.38 modulation-doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 mu m uniform Si0.62Ge0.38 layers and 0.5 mu m compositionally graded relaxed SiGe layers from 0 to 38% Ge. The buffer layers were annealed at 800 degrees C for 1 h to obtain complete relaxation. A 75 Angstrom Si(SiGe) channel with a 100 Angstrom spacer and a 300 Angstrom 2 X 10(19) cm(-3) n-type supply layer was grown on the top of the buffer layers. The cross-sectional transmission electron microscope reveals that the dense dislocation network is confined to the buffer layer, and relatively few dislocations terminate on the surface. The plan-view image indicates the threading dislocation density is about 4 X 10(6) cm(-2). The far-infrared measurements of electron cyclotron resonance were performed at 4 K with the magnetic field of 4-8 T. The effective masses determined from the slope of the center frequency of the absorption peak versus applied magnetic field plot are 0.203m(0) and 0.193m(0) for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of a two dimensional electron gas in an Si MOSFET (0.198m(0)). The electron effective mass of Si0.94Ge0.06 is reported for the first time and is about 5% lower than that of pure Si.

Effects of thermal annealing on the properties of zirconia films prepared by ion-assisted deposition

The effect of thermal annealing in the range 300–800 °C on the properties of zirconia films prepared by ion assisted deposition was studied. It was found that at low temperature the cubic phase is formed. This phase is stable up to 700 °C. All the films exhibit a monophasic monoclinic structure at 800 °C. The stress, estimated from X-ray patterns, shows a transition from tensile to compressive with increasing ion fluence. The refractive index and extinction coefficient do not seem to change appreciably up to 700 °C, showing a marked degradation thereafter. Single step annealing to the highest temperature was found to result in better stability than multistep annealing.

Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

We report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si0. 62Ge0.38 and Si0.94Ge0.06 /Si0. 62Ge0.38 modulation- doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 μm uniform Si0.62Ge0.38 layers and 0.5 μm compositionally graded relaxed SiGe layers from 0% Ge to 38 % Ge. The buffer layers were annealed at 800 °C for 1 hr to obtain complete relaxation. The samples had 100 Å spacers and 300 Å 2×1019 cm-3 n-type supply layers on the tops of the 75 Å channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4 – 8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 mo and 0.19 mo for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198mo). The electron effective mass of Si0.94Ge0.06 is reported for the first time and about 5 % lower than that of pure Si.

Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved.

Influence of the deposition energy on the composition and thermal cycling behavior of La-2(Zr0.7Ce0.3)(2)O-7 coatings

Lanthanum-zirconium-cerium composite oxide (La-2(Zr0.7Ce0.3)(2)O-7, LZ7C3) coatings were prepared under different conditions by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies, cyclic oxidation behavior of these coatings were studied. Elemental analysis indicates that the coating composition has partially deviated from the stoichiometry of the ingot, and the existence of excess La2O3 is also observed.

Effects of deposition conditions on composition and thermal cycling life of lanthanum zirconate coatings

Lanthanum, zirconate (La2Zr2O7, LZ) coatings were prepared under four different deposition conditions by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphology, cyclic oxidation behavior of these coatings were studied. Elemental analysis indicates that the coating composition has partially deviated from the stoichiometry of pyrochlore, and the existence of excess La2O3 is also observed. The deviation could be reduced by properly controlling the electron beam current or by changing the ingot composition.

Double-ceramic-layer thermal barrier coatings of La2Zr2O7/YSZ deposited by electron beam-physical vapor deposition

Double-ceramic-layer(DCL) thermal barrier coatings (TBCs) of La2Zr2O7 (LZ) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies and cyclic oxidation behavior of the DCL coating were studied. Both the X-ray diffraction (XRD) and thermogravimetric-differential thermal analysis (TG-DTA) prove that LZ and YSZ have good chemical applicability to form a DCL coating. The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ coating. and even longer than that of the single layer YSZ coating. The failure of the DCL coating is a result of both the bond coat oxidation and the thermal strain between bond coat and ceramic layer generated by the thermal expansion mismatch.