The affair at the inn

UANL

Fra Diavolo, or, The inn of Terracina : a comic opera, in three acts /

Mode of access: Internet.

Fifine at the fair; Red cotton night-cap country; and The inn album /

Fifine at the fair.--Prince Hohenstiel.-Schwangau.--Hervé Riel.--Red cotton night-cap country.--The inn album.

The arm-chair at the inn, by F. Hopkinson Smith;

"Published, August, 1912."

The inn of Gahnobway : [poems] /

"Voices of a summer past by Erich Herz": p. [165]-177.

No room in the inn,

Colored ornamental borders.

The inn-keeper's album.

Sketches and tales.

Law sports at Gray's Inn (1594) including Shakespeare's connection with the Inn's of court, the origin of the capias utlegatum re Coke and Bacon, Francis Bacon's connection with Warwickshire, together with a reprint of the Gesta Grayorum, by Basil Brown [pseud.] ....

Contains facsimile of t.-p. of Gestn Grayorum, London, 1688.

Red cotton night-cap country; Aristophanes' apology; The inn album; Pacchiarotto and how he worked in distemper, and other poems,

Mode of access: Internet.

Fifine at the fair : Red cotton night-cap country ; and The inn album /

Includes Prince Hohenstiel-Schwangau and Hervé Riel.

The Inn of tranquillity.

Mode of access: Internet.

Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I-V characteristic was also found to be dependent on the carrier concentration of InN. (C) 2012 Elsevier Ltd. All rights reserved.

Substrate impact on the growth of InN nanostructures by droplet epitaxy

The substrate effect on InN nanostructures grown by droplet epitaxy has been studied. InN nanostructures were fabricated on Si(111), silicon nitride/Si(111), AlN/Si(111) and Ge(100) substrates by droplet epitaxy using an RF plasma nitrogen source. The morphologies of InN nanostructures were investigated by field emission scanning electron microscopy (FESEM). The chemical bonding configurations of InN nanostructures were examined by x-ray photoelectron spectroscopy (XPS). Photoluminescence spectrum slightly blue shifted compared to the bulk InN, indicating a strong Burstein-Moss effect due to the presence of high electron concentration in the InN dots.

Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.