Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

The use of gate-to-drain capacitance (C-gd) measurement as a tool to characterize hot-carrier-induced charge centers in submicron n- and p-MOSFET's has been reviewed and demonstrated. By analyzing the change in C-gd measured at room and cryogenic temperature before and after high gate-to-drain transverse field (high field) and maximum substrate current (I-bmax) stress, it is concluded that the degradation was found to be mostly due to trapping of majority carriers and generation of interface states. These interface states were found to be acceptor states at top half of band gap for n-MOSFETs and donor states at bottom half of band gap for p-MOSFETs. In general, hot electrons are more likely to be trapped in gate oxide as compared to hot holes while the presence of hot holes generates more interface states. Also, we have demonstrated a new method for extracting the spatial distribution of oxide trapped charge, Q(ot), through gate-to-substrate capacitance (C-gb) measurement. This method is simple to implement and does not require additional information from simulation or detailed knowledge of the device's structure. (C) 2001 Elsevier Science Ltd. All rights reserved.

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.

Peak Force Kelvin Probe Force Microscopy Investigation of ZrO2 Nanocomposites for Hygroelectricity Power Element

ZrO2 nanocomposites were investigated considering their perspective application in hygroelectric power elements. Scanning probe microscopy (SPM) techniques allowed to visualize the surface topography and electrical properties. In this work was compared spacial charge behaviour of sample in humid and dry air conditions. Also different SPM modes were compared. Kelvin probe force microscopy (KPFM) was applied to characterize the spacial charge distribution on surface of the sample. Measurements showed, that trapped charge is not dissipated and can be manipulated with low voltages. Humidity influence on the electric potential of the sample was shown.

Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres

Pure-and lanthanun doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. Annealing in static air and oxygen atmosphere was performed at 700 degrees C for 2 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant and dissipation factor were measured in the frequency region from 1 kHz to 1 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. Films annealed in static air possess a dielectric constant higher than films annealed in oxygen atmosphere due to differences in the grain size, crystallinity and structural defects. A regularly shaped hystereses loop is observed after annealing in static air. The obtained results suggest that the annealing in oxygen atmosphere can increase the trapped charge and the relaxation phenomenon. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

EXAFS investigation on Sb incorporation effects to electrical transport in SnO2 thin films deposited by sot-gel

The effect of Sb doping in SnO2 thin films prepared by the sol-gel dip-coating (SGDC) process is investigated. Electronic and structural properties are evaluated through synchrotron radiation measurements by EXAFS and XANES. These data indicate that antimony is in the oxidation state W, and replaces tin atoms (Sn4+), at a grain surface site. Although the substitution yields net free carrier concentration, the electrical conductivity is increased only slightly, because it is reduced by the high grain boundary scattering. The overall picture leads to a shortening of the grain boundary potential, where oxygen vacancies compensate for oxygen adsorbed species, decreasing the trapped charge at grain boundary. (c) 2007 Elsevier Ltd. All rights reserved.

Contribution of oxygen related defects to the electronic transport in SnO2 sol-gel films

SnO2 deposited by sol-gel is a polycrystalline film with small grain size. Oxygen present at a less grain boundary traps electrons and then the depletion layer around the potential barrier of the grain boundary becomes wider, comparable to the grain size. We have modeled the conductivity taking into account the trapped charge at the depletion layer of the grain boundary and other scattering mechanisms such as ionized impurity and polar optical. Experimental data of photoconductivity of SnO2 sol-gel films are simulated considering the dominant scattering at grain boundary and crystallite bulk. The fraction of trapped charge at the grain boundary depends on temperature and wavelength of irradiating light, being as high as 50% for illumination in the range 500-600 nm for SnO2-2%Nb as grown sample annealed in air to 550°C. This fraction can be quite reduced depending on exposure to light and annealing under different oxygen partial pressure conditions.

Performance of electronic devices submitted to X-rays and high energy proton beams

In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 key X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. (C) 2011 Elsevier B.V. All rights reserved.

Highly efficient luminescence from a hybrid state found in strongly quantum confined PbS nanocrystals

We report that high quality PbS nanocrystals, synthesized in the strong quantum confinement regime, have quantum yields as high as 70% at room temperature. We use a combination of modelling and photoluminescence up-conversion to show that we obtain a nearly monodisperse size distribution. Nevertheless, the emission displays a large nonresonant Stokes shift. The magnitude of the Stokes shift is found to be directly proportional to the degree of quantum confinement, from which we establish that the emission results from the recombination of one quantum confined charge carrier with one localized or surface-trapped charge carrier. Furthermore, the surface state energy is found to lie outside the bulk bandgap so that surface-related emission only commences for strongly quantum confined nanocrystals, thus highlighting a regime where improved surface passivation becomes necessary.

Mechanisms for triggering high-voltage breakdown in vacuum

The electrical and optical characteristics of a cylindrical alumina insulator (94% Al203) have been measured under ultra-high vacuum (P < 10-8 mBar) conditions. A high-resolution CCD camera was used to make real-time optical recordings of DC prebreakdown luminescence from the ceramic, under conditions where DC current magnitudes were limited to less than 50μA. Two concentric metallized rings formed a pair of co-axial electrodes, on the end-face of the alumina tube; a third 'transparent' electrode was employed to study the effect of an orthogonal electric field upon the radial conduction processes within the metallized alumina specimen. The wavelength-spectra of the emitted light was quantified using a high-speed scanning monochromator and photo-multiplier tube detector. Concurrent electrical measurements were made alongside the recording of optical-emission images. An observed time-dependence of the photon-emission is correlated with a time-variation observed in the DC current-voltage characteristics of the alumina. Optical images were also recorded of pulsed-field surface-flashover events on the alumina ceramic. An intensified high-speed video technique provided 1ms frames of surface-flashover events, whilst 100ns frames were achieved using an ultra high-speed fast-framing camera. By coupling this fast-frame camera to a digital storage oscilloscope, it was possible to establish a temporal correlation between the application of a voltage-pulse to the ceramic and the evolution of photonic emissions from the subsequent surface-flashover event. The electro-optical DC prebreakdown characteristics of the alumina are discussed in terms of solid-state photon-emission processes, that are believed to arise from radiative electron-recombination at vacancy-defects and substitutional impurity centres within the surface-layers of the ceramic. The physical nature of vacancy-defects within an alumina dielectric is extensively explored, with a particular focus placed upon the trapped electron energy-levels that may be present at these defect centres. Finally, consideration is given to the practical application of alumina in the trigger-ceramic of a sealed triggered vacuum gap (TVG) switch. For this purpose, a physical model describing the initiation of electrical breakdown within the TVG regime is proposed, and is based upon the explosive destabilisation of trapped charge within the alumina ceramic, triggering the onset of surface-flashover along the insulator. In the main-gap prebreakdown phase, it is suggested that the electrical-breakdown of the TVG is initiated by the low-field 'stripping' of prebreakdown electrons from vacancy-defects in the ceramic under the influence of an orthogonal main-gap electric field.

Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer

The dielectric properties of (Ba, Sr)TiO3 films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere produces a slight dielectric relaxation. Such dependence of the dielectric relaxation was related both to oxygen vacancies and to the presence of negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric film interface. (C) 2000 American Institute of Physics. [S0003-6951(00)00817-2].

Nuclear charge radius determination of 7,10 Be and the one-neutron halo nucleus 11 Be

The only nuclear model independent method for the determination of nuclear charge radii of short-lived radioactive isotopes is the measurement of the isotope shift. For light elements (Z < 10) extremely high accuracy in experiment and theory is required and was only reached for He and Li so far. The nuclear charge radii of the lightest elements are of great interest because they have isotopes which exhibit so-called halo nuclei. Those nuclei are characterized by a a very exotic nuclear structure: They have a compact core and an area of less dense nuclear matter that extends far from this core. Examples for halo nuclei are 6^He, 8^He, 11^Li and 11^Be that is investigated in this thesis. Furthermore these isotopes are of interest because up to now only for such systems with a few nucleons the nuclear structure can be calculated ab-initio. In the Institut für Kernchemie at the Johannes Gutenberg-Universität Mainz two approaches with different accuracy were developed. The goal of these approaches was the measurement of the isotope shifts between (7,10,11)^Be^+ and 9^Be^+ in the D1 line. The …first approach is laser spectroscopy on laser cooled Be^+ ions that are trapped in a linear Paul trap. The accessible accuracy should be in the order of some 100 kHz. In this thesis two types of linear Paul traps were developed for this purpose. Moreover, the peripheral experimental setup was simulated and constructed. It allows the efficient deceleration of fast ions with an initial energy of 60 keV down to some eV and an effcient transport into the ion trap. For one of the Paul traps the ion trapping could already be demonstrated, while the optical detection of captured 9^Be^+ ions could not be completed, because the development work was delayed by the second approach. The second approach uses the technique of collinear laser spectroscopy that was already applied in the last 30 years for measuring isotope shifts of plenty of heavier isotopes. For light elements (Z < 10), it was so far not possible to reach the accuracy that is required to extract information about nuclear charge radii. The combination of collinear laser spectroscopy with the most modern methods of frequency metrology …finally permitted the …first-time determination of the nuclear charge radii of (7,10)^Be and the one neutron halo nucleus 11^Be at the COLLAPS experiment at ISOLDE/ CERN. In the course of the work reported in this thesis it was possible to measure the absolute transition frequencies and the isotope shifts in the D1 line for the Be isotopes mentioned above with an accuracy of better than 2 MHz. Combination with the most recent calculations of the mass effect allowed the extraction of the nuclear charge radii of (7,10,11)^Be with an relative accuracy better than 1%. The nuclear charge radius decreases from 7^Be continuously to 10^Be and increases again for 11^Be. This result is compared with predictions of ab-initio nuclear models which reproduce the observed trend. Particularly the "Greens Function Monte Carlo" and the "Fermionic Molecular Dynamic" model show very good agreement.

Analysis of charge-transport properties in GST materials for next generation phase-change memory devices

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and scalability. This alternative non-volatile memory technology, which uses resistance contrast in phase-change materials, offers more density relative to DRAM, and can help to increase main memory capacity of future systems while remaining within the cost and power constraints. Chalcogenide materials can suitably be exploited for manufacturing phase-change memory devices. Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. Crystalline GST exhibits an almost Ohmic I(V) curve. In contrast amorphous GST shows a high resistance at low biases while, above a threshold voltage, a transition takes place from a highly resistive to a conductive state, characterized by a negative differential-resistance behavior. A clear and complete understanding of the threshold behavior of the amorphous phase is fundamental for exploiting such materials in the fabrication of innovative nonvolatile memories. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron–electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.

Production of antihydrogen via double charge exchange

Spectroscopy of the 1S-2S transition of antihydrogen confined in a neutral atom trap and comparison with the equivalent spectral line in hydrogen will provide an accurate test of CPT symmetry and the first one in a mixed baryon-lepton system. Also, with neutral antihydrogen atoms, the gravitational interaction between matter and antimatter can be tested unperturbed by the much stronger Coulomb forces.rnAntihydrogen is regularly produced at CERN's Antiproton Decelerator by three-body-recombination (TBR) of one antiproton and two positrons. The method requires injecting antiprotons into a cloud of positrons, which raises the average temperature of the antihydrogen atoms produced way above the typical 0.5 K trap depths of neutral atom traps. Therefore only very few antihydrogen atoms can be confined at a time. Precision measurements, like laser spectroscopy, will greatly benefit from larger numbers of simultaneously trapped antihydrogen atoms.rnTherefore, the ATRAP collaboration developed a different production method that has the potential to create much larger numbers of cold, trappable antihydrogen atoms. Positrons and antiprotons are stored and cooled in a Penning trap in close proximity. Laser excited cesium atoms collide with the positrons, forming Rydberg positronium, a bound state of an electron and a positron. The positronium atoms are no longer confined by the electric potentials of the Penning trap and some drift into the neighboring cloud of antiprotons where, in a second charge exchange collision, they form antihydrogen. The antiprotons remain at rest during the entire process, so much larger numbers of trappable antihydrogen atoms can be produced. Laser excitation is necessary to increase the efficiency of the process since the cross sections for charge-exchange collisions scale with the fourth power of the principal quantum number n.rnThis method, named double charge-exchange, was demonstrated by ATRAP in 2004. Since then, ATRAP constructed a new combined Penning Ioffe trap and a new laser system. The goal of this thesis was to implement the double charge-exchange method in this new apparatus and increase the number of antihydrogen atoms produced.rnCompared to our previous experiment, we could raise the numbers of positronium and antihydrogen atoms produced by two orders of magnitude. Most of this gain is due to the larger positron and antiproton plasmas available by now, but we could also achieve significant improvements in the efficiencies of the individual steps. We therefore showed that the double charge-exchange can produce comparable numbers of antihydrogen as the TBR method, but the fraction of cold, trappable atoms is expected to be much higher. Therefore this work is an important step towards precision measurements with trapped antihydrogen atoms.

Beam-energy Dependence Of Charge Separation Along The Magnetic Field In Au+au Collisions At Rhic.

Local parity-odd domains are theorized to form inside a quark-gluon plasma which has been produced in high-energy heavy-ion collisions. The local parity-odd domains manifest themselves as charge separation along the magnetic field axis via the chiral magnetic effect. The experimental observation of charge separation has previously been reported for heavy-ion collisions at the top RHIC energies. In this Letter, we present the results of the beam-energy dependence of the charge correlations in Au+Au collisions at midrapidity for center-of-mass energies of 7.7, 11.5, 19.6, 27, 39, and 62.4 GeV from the STAR experiment. After background subtraction, the signal gradually reduces with decreased beam energy and tends to vanish by 7.7 GeV. This implies the dominance of hadronic interactions over partonic ones at lower collision energies.