On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures. (C) 2011 Elsevier Ltd. All rights reserved.

New approaches for enhancing light emission from Er-based materials and devices

In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron-hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 μm owing to the efficient reduction of the defect density. © 2008 Elsevier B.V. All rights reserved.

Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Detection of neurotransmitters by a light scattering technique based on seed-mediated growth of gold nanoparticles

A simple light scattering detection method for neurotransmitters has been developed, based on the growth of gold nanoparticles. Neurotransmitters (dopamine, L-dopa, noradrenaline and adrenaline) can effectively function as active reducing agents for generating gold nanoparticles, which result in enhanced light scattering signals. The strong light scattering of gold nanoparticles then allows the quantitative detection of the neurotransmitters simply by using a common spectrofluorometer.

One-step synthesis of high quality kesterite Cu2ZnSnS4nanocrystals: A hydrothermal approach

The present work demonstrates a systematic approach for the synthesis of pure kesterite-phase Cu2ZnSnS4 (CZTS) nanocrystals with a uniform size distribution by a one-step, thioglycolic acid (TGA)-assisted hydrothermal route. The formation mechanism and the role of TGA in the formation of CZTS compound were thoroughly studied. It has been found that TGA interacted with Cu2+ to form Cu+ at the initial reaction stage and controlled the crystal-growth of CZTS nanocrystals during the hydrothermal reaction. The consequence of the reduction of Cu2+ to Cu+ led to the formation Cu2−xS nuclei, which acted as the crystal framework for the formation of CZTS compound. CZTS was formed by the diffusion of Zn2+ and Sn4+ cations to the lattice of Cu2−xS during the hydrothermal reaction. The as-synthesized CZTS nanocrystals exhibited strong light absorption over the range of wavelength beyond 1000 nm. The band gap of the material was determined to be 1.51 eV, which is optimal for application in photoelectric energy conversion device.

Activation of violaxanthin cycle in darkness is a common response to different abiotic stresses : a case study in Pelvetia canaliculata

Background: In the violaxanthin (V) cycle, V is de-epoxidized to zeaxanthin (Z) when strong light or light combined with other stressors lead to an overexcitation of photosystems. However, plants can also suffer stress in darkness and recent reports have shown that dehydration triggers V-de-epoxidation in the absence of light. In this study, we used the highly stress-tolerant brown alga Pelvetia canaliculata as a model organism, due to its lack of lutein and its non-photochemical quenching independent of the transthylakoidal-ΔpH, to study the triggering of the V-cycle in darkness induced by abiotic stressors. Results: We have shown that besides desiccation, other factors such as immersion, anoxia and high temperature also induced V-de-epoxidation in darkness. This process was reversible once the treatments had ceased (with the exception of heat, which caused lethal damage). Irrespective of the stressor applied, the resulting de-epoxidised xanthophylls correlated with a decrease in Fv/Fm, suggesting a common function in the down-regulation of photosynthetical efficiency. The implication of the redox-state of the plastoquinone-pool and of the differential activity of V-cycle enzymes on V-de-epoxidation in darkness was also examined. Current results suggest that both violaxanthin de-epoxidase (VDE) and zeaxanthin-epoxidase (ZE) have a basal constitutive activity even in darkness, being ZE inhibited under stress. This inhibition leads to Z accumulation. Conclusion: This study demonstrates that V-cycle activity is triggered by several abiotic stressors even when they occur in an absolute absence of light, leading to a decrease in Fv/Fm. This finding provides new insights into an understanding of the regulation mechanism of the V-cycle and of its ecophysiological roles.

Readout of a real-time hologram in bacteriorhodopsin film with high diffraction efficiency and intensity

A scheme for the readout of a hologram recorded in bacteriorhodopsin film with high diffraction efficiency and intensity is suggested and demonstrated. Two weak coherent continuous beams function as the recording beams, and a strong light pulse is used to read the real-time hologram. The width of the readout light pulse is modulated to be short compared with the erase time of the reading beam; the time space between two adjacent pulses is ensured to be longer than the time the beams take to recover the hologram, and high diffraction efficiency and intensity (similar to 11 mW/cm(2)) can be obtained. (C) 1996 Optical Society of America.

青藏高原几种植物的光合特性研究

通过气体交换、荧光猝灭动力学以及反射光谱等技术研究了两个青稞（Hordeum vulgare L.）品种的光合特性及激发能分配。结果表明，青稞的光饱和点1000 μmol m-2 s-1左右。在0～500 μmol m-2 s-1的光强范围里，青稞叶片的光呼吸(Pr)随着光强升高而增加;光强超过500 μmol m-2 s-1以后，光呼吸变化不明显。光呼吸占总光合的比例(Pr/Pm)随光强增强下降。随着光强增强，PSⅡ有效光化学量子效率（Fv′/Fm′），PSⅡ反应中心的实际光化学量子效率（ΦPSⅡ），光化学猝灭系数（qP）不断降低而青稞叶片的非光化学猝灭(NPQ)不断升高，说明越来越多的光能以热耗散的形式耗散掉。光谱分析表明△PRI 随着青稞叶片暴露于光下的时间迅速增大。因此，我们认为光呼吸不是青稞主要的光破坏防御机制，依赖叶黄素循环的热耗散可能是田间青稞耗散过剩光能的主要途径。 通过气体交换、荧光猝灭动力学等技术研究了四种乔木在拉萨和那曲的光合特性及激发能分配。结果表明，四种乔木藏川杨（Populus szechuanica var. tibetica schneid.），银白杨（Populus alba L.），左旋柳(Salix paraplesia var. subintegra C. Wang et P. Y. Pu)，墨竹柳(Salix maizhokunggarensis N. Chao)在拉萨市的光合速率（Pn），叶片气孔导度（Gs），蒸腾速率（Tr）均显著高于那曲。藏川杨和墨竹柳的光下实际光化学效率（ΦPSⅡ）在拉萨显著高于那曲，银白杨和左旋柳的光下实际光化学效率在拉萨和那曲没有显著差异。四种乔木开放反应中心激发能捕获效率（Fv′/Fm′）和天线热耗散（1－Fv′/Fm′）在拉萨和那曲的差异不显著。测量光合时的气温（Tair）拉萨显著高于那曲，除墨竹柳外叶温（Tleaf）也显著高于那曲，墨竹柳的上述两参数在两地间无显著差异。除藏川杨外其余三种乔木在拉萨的胞间二氧化碳浓度（Ci）显著高于那曲，气孔限制值(Ls)显著低于那曲，藏川杨的上述两指标在两地间无显著差异。除墨竹柳外，其余三种乔木在两地的光合（Pn）与叶温（Tleaf）成显著正相关。对银白杨和左旋柳来说，低叶温通过降低气孔导度（Gs）从而降低胞间二氧化碳浓度（Ci）是造成那曲光合低的主要因素之一。对于墨竹柳来说，可能有其他非温度的环境条件影响其气孔导度进而造成气孔限制。此外，叶温可能主要通过非气孔限制来影响藏川杨的光合速率。因此，我们认为在西藏地区不同乔木对海拔高度的响应机制可能不同，但具体机制还需要进一步研究。

淹水及淹水后出水对皇冠草光合特性和光抑制的影响

通过气体交换和叶绿素荧光等方法，研究了淹水胁迫条件下及胁迫解除后皇冠草不同功能叶片的光合特性及光抑制的变化。结果表明： （1）在淹水阶段，与对照相比，气生叶（全淹组淹水前形成的功能叶）在水淹条件下叶片大小和气孔没有明显变化；但是沉水叶（全淹组淹水后新生的功能叶）的叶面积明显增加，气孔变小，上表皮气孔密度增加，下表皮气孔密度减小。 （2）水淹导致气生叶碳同化能力、光化学效率和叶绿素含量下降。沉水叶在发育过程中碳同化能力、光化学效率和叶绿素逐渐升高。 （3）出水后，在自然强光下气生叶和沉水叶的相对含水量和最大光化学效率Fv/Fm急剧且大幅度下降，发生明显的光抑制；而在弱光下Fv/Fm无明显下降。 （4）出水后离体叶片在水分充足的条件下，在强光下照射6h后气生叶和水生叶均发生严重光抑制，且在弱光下页不能恢复。 因此，我们认为淹水条件下，叶片上表皮气孔密度的增加使其蒸腾速率提高；水生叶较强的碳同化能力和增加的叶面积是确保其植株水下生存的关键；强光使水生叶出水后发生光抑制和反应中心失活，导度和蒸腾速率提高导致的叶片水分丧失则加剧了这一过程，这两者共同作用导致了自然条件下水生叶的出水死亡。

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Facile synthesis of highly uniform octahedral LuVO4 microcrystals by a facile chemical conversion method

Uniform octahedral LuVO4 microcrystals have been successfully prepared through a designed two-step hydrothermal method. One-dimensional lutetium precursor was first prepared through a simple hydrothermal route. Subsequently, a well-shaped octahedral LuVO4 sample was synthesized at the expense of the wirelike precursors during the hydrothermal process. The whole process in this method was carried out in aqueous conditions without the use of any organic solvents, surfactant, or catalyst. The conversion process from nanowire precursor to octahedral product has been investigated in detail. The LuVO4 : Ln(3+) (Ln Eu, Dy, Sm, and Er) phosphors show strong light emissions with different colors coming from different activator ions under ultraviolet light excitation or low-voltage electron beam excitation. Furthermore, this general and facile method may be of much significance in the synthesis of many other lanthanide compounds with polyhedral morphology.

Uniform Lanthanide Orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) Microplates: General Synthesis and Luminescence Properties

A variety of uniform lanthanide orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) microplates have been successfully prepared by a general and facile conversion method. One-dimensional (ID) lanthanide hydroxides were first prepared through a simple hydrothermal process. Subsequently, uniform LnBO(3) microplates were synthesized at the expense of the ID precursors during a hydrothermal conversion process. The whole process in this method was carried out in aqueous condition without the use of any organic solvents, surfactant, or catalyst. The as-obtained rare earth ions doped GdBO3 and TbBO3 microplates show strong light emissions with different colors coming from different activator ions under ultraviolet excitation or low-voltage electron beam excitation, which might find potential applications in fields such as light phosphor powders and advanced flat panel display devices.

Facile Synthesis and Luminescence Properties of Highly Uniform MF/YVO4:Ln(3+) (Ln = Eu, Dy, and Sm) Composite Microspheres

Uniform MF/YVO4:Ln(3+) (Ln = Eu, Dy, and Sm) composite microspheres have been prepared via a simple and economical wet-chemical route at ambient pressure and low temperature. Monodisperse micrometer-sized melamine formaldehyde (MF) colloidal particles were first fabricated by a condensation process of melamine with formaldehyde. Subsequently, well-dispersed YVO4 nanoparticles were successfully grown onto the MF microspheres to form core-shell structured composite particles in aqueous Solution. The as-obtained composite microspheres with perfect spherical shape are uniform in size and distribution, and the thickness and roughness of the YVO4 shells on MF cores could be tuned by varying the reaction temperature. The MF/YVO4:Ln(3+) composite phosphors show strong light emissions with different colors coming from different activator ions under ultraviolet excitation, which might find potential applications in fields such as light phosphor powders and advanced flat panel displays.