Localização em poço quântico de Ga_(1-x)Al_(x)AsGaAs com campo magnético inclinado intenso

Nesta dissertação, apresentamos resultados da análise de um gás de elétrons bidimensional, confinado em um poço quântico parabólico de Ga_(1-x)Al_(x)As com campo magnético aplicado inclinado e intenso. Mostramos uma solução analítica exata para o caso de um gás de elétrons não interagente e provamos que o fator de Landé efetivo g*, que neste caso varia com a posição devido à própria variação da concentração de Al na liga GaAlAs, também contribui com um termo parabólico nas frequências normais, tornando-as dependente do spin. O termo normal do splitting Zeeman aparece, no entanto, com um fator g dado por aquele do GaAs. Indo além desse tratamento, incluímos um campo elétrico externo, aplicado paralelamente a direção de crescimento, de modo a modular a distribuição de cargas dentro do poço, e com isso controlar externamente os efeitos dos cruzamentos dos níveis. Calculamos numericamente os níveis de energia no poço parabólico quântico, variando o campo magnético aplicado e a inclinação do campo.

Efeitos da interação dipolar na nucleação de vórtices em nano-cilindros magnéticos

The effect of confinement on the magnetic structure of vortices of dipolar coupled ferromagnetic nanoelements is an issue of current interest, not only for academic reasons, but also for the potential impact in a number of promising applications. Most applications, such as nano-oscillators for wireless data transmission, benefit from the possibility of tailoring the vortex core magnetic pattern. We report a theoretical study of vortex nucleation in pairs of coaxial iron and Permalloy cylinders, with diameters ranging from 21nm to 150nm, and 12nm and 21nm thicknesses, separated by a non-magnetic layer. 12nm thick iron and Permalloy isolated (single) cylinders do not hold a vortex, and 21nm isolated cylinders hold a vortex. Our results indicate that one may tailor the magnetic structure of the vortices, and the relative chirality, by selecting the thickness of the non-magnetic spacer and the values of the cylinders diameters and thicknesses. Also, the dipolar interaction may induce vortex formation in pairs of 12nm thick nanocylinders and inhibit the formation of vortices in pairs of 21nm thick nanocylinders. These new phases are formed according to the value of the distance between the cylinderes. Furthermore, we show that the preparation route may control relative chirality and polarity of the vortex pair. For instance: by saturating a pair of Fe 81nm diameter, 21nm thickness cylinders, along the crystalline anisotropy direction, a pair of 36nm core diameter vortices, with same chirality and polarity is prepared. By saturating along the perpendicular direction, one prepares a 30nm diameter core vortex pair, with opposite chirality and opposite polarity. We also present a theoretical discussion of the impact of vortices on the thermal hysteresis of a pair of interface biased elliptical iron nanoelements, separated by an ultrathin nonmagnetic insulating layer. We have found that iron nanoelements exchange coupled to a noncompensated NiO substrate, display thermal hysteresis at room temperature, well below the iron Curie temperature. The thermal hysteresis consists in different sequences of magnetic states in the heating and cooling branches of a thermal loop, and originates in the thermal reduction of the interface field, and on the rearrangements of the magnetic structure at high temperatures, 5 produce by the strong dipolar coupling. The width of the thermal hysteresis varies from 500 K to 100 K for lateral dimensions of 125 nm x 65 nm and 145 nm x 65 nm. We focus on the thermal effects on two particular states: the antiparallel state, which has, at low temperatures, the interface biased nanoelement with the magnetization aligned with the interface field and the second nanoelement aligned opposite to the interface field; and in the parallel state, which has both nanoelements with the magnetization aligned with the interface field at low temperatures. We show that the dipolar interaction leads to enhanced thermal stability of the antiparallel state, and reduces the thermal stability of the parallel state. These states are the key phases in the application of pairs of ferromagnetic nanoelements, separated by a thin insulating layer, for tunneling magnetic memory cells. We have found that for a pair of 125nm x 65nm nanoelements, separated by 1.1nm, and low temperature interface field strength of 5.88kOe, the low temperature state (T = 100K) consists of a pair of nearly parallel buckle-states. This low temperature phase is kept with minor changes up to T= 249 K when the magnetization is reduced to 50% of the low temperature value due to nucleation of a vortex centered around the middle of the free surface nanoelement. By further increasing the temperature, there is another small change in the magnetization due to vortex motion. Apart from minor changes in the vortex position, the high temperature vortex state remains stable, in the cooling branch, down to low temperatures. We note that wide loop thermal hysteresis may pose limits on the design of tunneling magnetic memory cells

Efeito nernst anômalo em Materiais com anisotropia magnetocristalina (110)

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Batimentos quânticos dependentes do SPIN via STM

Pós-graduação em Ciência dos Materiais - FEIS

Materiais óxidos magnéticos nanoestruturados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

O grafeno versus gás de elétrons 2d: filtro fano relativístico de spins por meio de pontas de afm e stm

Pós-graduação em Ciência dos Materiais - FEIS

Análise da deposição de filmes finos semicondutores de GaN e GaN e Ga1-xMnxN preparados por sputtering reativo

Thin films of Ga1-xMnxN have great interest in its potential for control of electron spin (spintronics), in most cases this material is synthesized by techniques that have a high degree of control the deposition parameters, such as molecular beam epitaxy (MBE) and deposition of metalorganic chemical vapor deposition (MOCVD). The sputtering technique is an alternative route to produce such materials. Here we study the film deposition Ga1-xMnxN by reactive sputtering technique and apply enhancements such as a glove box, a residual gas analyzer and temperature control system, in order to growth films epitaxially using an analysis of the preconditions of films analyzed by spectroscopic techniques and microscopic. These procedures helped to improve the technique of deposition by cleaning substrates in an inert environment, and by the analysis of trace gases and heating the substrate holder as explained in the literature. Through the applications and comparisons it can be pointed out that the technique has the advantage of its simplicity and relatively low cost compared to MBE and MOCVD, but produces polycrystalline material

Estudo dos processos de geração e transferência de cargas em corantes cianinas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)