Manifestation of intermediate phase in mechanical properties: Nano-indentation studies on Ge-Te-Si bulk chalcogenide glasses

Nano-indentation studies have been undertaken on bulk Ge15Te85-xSix glasses (0 <= x <= 9), to estimate hardness, H and elastic modulus, E. It is found that E and H increase initially with the increase in the atomic percent of Si. Further, a plateau is seen in the composition dependence of E and H in the composition range 2 <= x <= 6. It is also seen that the addition of up to 2 at% Si increases the density rho of the glass considerably; however, further additions of Si lead to a near linear reduction in rho, in the range 2 <= x <= 6. Beyond x=6, rho increases again with Si content. The variation of molar volume V-m brings out a more fascinating picture. A plateau is seen in the intermediate phase suggesting that the molecular structure of the glasses is adapting to keep the count of constraints fixed in this particular phase. The observed variations in mechanical properties are associated with the Boolchand's intermediate phase in the present glassy system, in the composition range 2 <= x <= 6, suggested earlier from calorimetric and electrical switching studies. The present results reveal rather directly the existence of the intermediate phase in elastic and plastic properties of chalcogenide glasses. (C) 2012 Elsevier Ltd. All rights reserved.

Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications

Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

Erbium doped materials for a Si-based microphotonics

We have investigated the role of the Si excess on the photoluminescence properties of Er doped substoichiometric SiOx layers. We demonstrate that the Si excess has two competing roles: when agglomerated to form Si nanoclusters (Si-nc) it enhances the Er excitation efficiency but it also introduces new non-radiative decay channels. When Er is excited through an energy transfer from Si-nc, the beneficial effect on the enhanced excitation efficiency prevails and the Er emission increases with increasing Si content. Nevertheless the maximum excited Er fraction is only of the order of percent. In order to increase the concentration of excited Er ions, a different approach based on Er silicate thin film has been explored. Under proper annealing conditions, an efficient luminescence at 1535 nm is found and all of the Er ions in the material is optically active. The possibility to efficiently excite Er ions also through electron-hole mediated processes is demonstrated in nanometer-scale Er-Si-O/Si multilayers. These data are presented and discussed.

Influence of Si doping on magnetic properties of (Ga,Mn)As

We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (T-C) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of T-C and p is observed with further increase in the doping content of Si. We discuss the possible mechanism for the changes obtained by different Si doping contents and attribute the results to a competition between the existence of Si-Ga (Si substitutes for Ga site) that acts as a donor and Si-I (Si interstitials) which is in favor of the improvement of ferromagnetism. (C) 2008 Elsevier B.V. All rights reserved.

Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD

A new metal catalysis-free method of fabricating Si or SiO2 nanowires (NWs) compatible with Si CMOS technology was proposed by annealing SiOx (x < 2) films deposited by plasma -enhanced chemical vapor deposition (PECVD). The effects of the Si content (x value) and thickness of SiOx films, the annealing process and flowing gas ambient on the NW growth were studied in detail. The results indicated that the SiOx film of a thickness below 300 rim with x value close to 1 was most favorable for NW growth upon annealing at 1000-1150 degrees C in the flowing gas mixture of N-2 and H-2. NWs of 50-100nm in diameter and tens of micrometers in length were synthesized by this method. The formation mechanism was likely to be related to a new type of oxide assisted growth (OAG) mechanism, with Si nanoclusters in SiOx films after phase separation serving as the nuclei for the growth of NWs in SiOx films > 200nm, and SiO molecules from thin SiO, film decomposition inducing the NW growth in films < 100nm. An effective preliminary method to control NW growth direction was also demonstrated by etching trenches in SiOx films followed by annealing.

Efeito de teores de Zr sobre as propriedades mecânicas e elétricas de ligas Al-Ec-Si aplicadas na elaboração de ligas para Tx e Dx de energia elétrica

Este trabalho objetiva desenvolver uma análise da influência do Zr na modificação de características importantes em ligas de Al-EC-Si para aplicação como condutor de energia elétrica, almejando obter-se propriedades termorresistentes. Para a realização deste estudo, as ligas foram obtidas por fundição direta em lingoteira metálica em formato “U”, a partir do Al-EC, fixando-se na base o teor de 0,7% de Si, e em seguida, variando-se diferentes teores de Zr. Com o intuito de precipitar as partículas de segunda fase chamadas de dispersóides, que tem como principal característica a retenção da microestrutura deformada quando exposta a altas temperaturas, foi necessário submeter as ligas a um tratamento térmico de 310 ºC durante 24 horas afim de provocar o surgimento dos finos dispersóides de Al₃Zr. Foram estabelecidas duas etapas para obtenção dos resultados: A ETAPA I composta da solidificação, usinagem e deformações obtidas com as ligas, gerando os fios que foram utilizados em todos os ensaios. A ETAPA II repete os mesmos procedimentos adotados na ETAPA I, porém é feito um tratamento térmico de 310ºC por 24 horas antes da deformação. A caracterização das amostras dos fios de cada liga quanto à termorresistividade, que obedeceu a exigência da COPEL (Companhia Paranaense de Energia), sendo submetidos à temperatura de 230 ºC por uma hora e foram feitos também tratamentos térmicos na temperatura de 310 e 390ºC, com a finalidade de se avaliar a estabilidade térmica das ligas estudadas. Verificou-se de maneira geral que teores crescentes de Zr provocam um refinamento de grão e aumentam o LRT e a estabilidade térmica da liga, tanto na ETAPA I quanto na ETAPA II. Foi observado ainda que na ETAPA I, a condutividade foi bastante afetada pelos teores de Zr, e que a inserção do tratamento térmico da ETAPA II melhorou a capacidade de conduzir energia elétrica na liga, particularmente para o diâmetro que sofreram maior deformação.

As-synthesized TEA-BEA zeolite: Effect of Si/Al ratio on the Knoevenagel condensation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effects of silicon content and cooling rate on mechanical properties of heavy section ductile cast iron

The effects of Si and cooling rate are investigated for their effect on the mechanical properties and microstructure. Three alloys were chosen with varying C and Si contents and an attempt to keep the remainder of the elements present constant. Within each heat, three test blocks were poured. Two blocks had chills – one with a fluid flowing through it to cool it (active chill) and one without the fluid (passive) – and the third block did not have a chill. Cooling curves were gathered and analyzed. The mechanical properties of the castings were correlated to the microstructure, cooling rate and Si content of each block. It was found that an increase in Si content increased the yield stress, tensile strength and hardness but decreased the impact toughness, elongation and Young’s modulus. The fast cooling rates produced by the chills caused a high nodule count in the castings along with a fine ferrite grain size and a high degree of nodularity. The fine microstructures, in turn, increased the strength and ductile to brittle transition temperature (DBTT) of the castings. The fast cooling rate was not adequate to overcome the dramatic increase in DBTT that is caused by the addition of Si.

Strength-ductility behaviour of Al-Si-Cu-Mg casting alloys in T6 temper

A comparative study of the mechanical properties of 20 experimental alloys has been carried out. The effect of different contents of Si, Cu, Mg, Fe and Mn, as well as solidification rate, has been assessed using a strength-ductility chart and a quality index-strength chart developed for the alloys. The charts show that the strength generally increases and the ductility decreases with an increasing content of Cu and Mg. Increased Fe (at Fe/Mn ratio 0.5) dramatically lowers the ductility and strength of low Si alloys. Increased Si content generally increases the strength and the ductility. The increase in ductility with increased Si is particularly significant when the Fe content is high. The charts are used to show that the cracking of second phase particles imposes a limit to the maximum achievable strength by limiting the ductility of strong alloys. The (Cu + Mg) content (at.%), which determines the precipitation strengthening and the volume fraction of Cu-rich and Mg-rich intermetallics, can be used to select the alloys for given strength and ductility, provided the Fe content stays below the Si-dependent critical level for the formation of pre-eutectic alpha-phase particles or beta-phase plates.

A thermogravimetric study of the oxidative growth of Al2O3/Al alloy composites

The oxidation of liquid Al–Mg–Si alloys at 900–1400 °C was studied by thermogravimetric analysis (TGA). The development of a semi-protective surface layer of MgO/MgAl2O4 allows the continuous formation of an Al2O3-matrix composite containing an interpenetrating network of metal microchannels at 1000–1350 °C. An initial incubation period precedes bulk oxidation, wherein Al2O3 grows from a near-surface alloy layer by reaction of oxygen supplied by the dissolution of the surface oxides and Al supplied from a bulk alloy reservoir through the microchannel network. The typical oxidation rate during bulk growth displays an initial acceleration followed by a parabolic deceleration in a regime apparently limited by Al transport to the near-surface layer. Both regimes may be influenced by the Si content in this layer, which rises due to preferential Al and Mg oxidation. The growth rates increase with temperature to a maximum at ~1300 °C, with a nominal activation energy of 270 kJ/mole for an Al-2.85 wt. % Mg-5.4 wt. % Si alloy in O2 at furnace temperatures of 1000–1300 °C. An oscillatory rate regime observed at 1000–1075 °C resulted in a banded structure of varying Al2O3-to-metal volume fraction.

Electron beam surface melting of model 1200 Al alloys

Electron beam surface melting has been used to characterise the phase content formed in a number of model 1200 series Al alloys with increasing solidification velocity in the range 2–50 mm s−1, typical of that experienced during continuous strip casting. Phases were extracted from the Al matrix and analysed by X-ray diffraction. A qualitative solidification microstructure selection map has been produced, showing that, for a given Fe content of 0.55 wt.%: with increasing solidification velocity the metastable aluminides FeAl6 and FeAlm displace equilibrium Fe4Al13 at Si contents similar0.15 wt.%, and that α-AlFeSi displaces these Fe aluminides at Si contents >0.15 wt.%, and that α-AlFeSi is an equilibrium phase at a Si content ≥0.50 wt.%.

Part I. Kinetics of coarsening of the gamma-prime precipitate in nickel-silicon alloys. Part II. Rate of crystallization of an amorphous Fe-P-C alloy

The coarsening kinetics of Ni₃ Si(γ') precipitate in a binary Ni-Si alloy containing 6.5 wt. % silicon was studied by magnetic techniques and transmission electronmicroscopy. A calibration curve was established to determine the concentration of silicon in the matrix. The variation of the Si content of the Ni-rich matrix as a function of time follows Lifshitz and Wagner theory for diffusion controlled coarsening phenomena. The estimated values of equilibrium solubility of silicon in the matrix represent the true coherent equilibrium solubilities.

The experimental particle-size distributions and average particle size were determined from dark field electron micrographs. The average particle size varies linearly with t^-1/3 as suggested by Lifshitz and Wagner. The experimental distributions of particle sizes differ slightly from the theoretical curve at the early stages of aging, but the agreement is satisfactory at the later stages. The values of diffusion coefficient of silicon, interfacial free energy and activation energy were calculated from the results of coarsening kinetics. The experimental value of effective diffusion coefficient is in satisfactory agreement with the value predicted by the application of irreversible the rmodynamics to the process of volume constrained growth of coherent precipitate during coarsening. The coherent γ' particles in Ni-Sialloy unlike those in Ni-Al and Ni-Ti seem to lose coherency at high temperature. A mechanism for the formation of semi-coherent precipitate is suggested.