Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals

We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated. © 2009 SPIE.

Switching components for medium voltage drives

Nowadays power drives are the essential part almost of all technological processes. Improvement of efficiency and reduction of losses require development of semiconductor switches. It has a particular meaning for the constantly growing market of renewable sources, especially for wind turbines, which demand more powerful semiconductor devices for control with growth of power. Also at present semiconductor switches are the key component in energy transmission, optimization of generation and network connection. The aim of this thesis is to make a survey of contemporary semiconductor components, showing difference in structures, advantages, disadvantages and most suitable applications. There is topical information about voltage, frequency and current limits of different switches. Study tries to compare dimensions and price of different components. Main manufacturers of semiconductor components are presented with the review of devices produced by them, and a conclusion about their availability was made. IGBT is selected as a main component in this study, because nowadays it is the most attractive component for usage in power drives, especially at the low levels of medium voltage. History of development of IGBT structure, static and dynamic characteristics are considered. Thesis tells about assemblies and connection of components and problems which can appear. One of key questions about semiconductor materials and their future development was considered. For the purpose of comparison strong and weak sides of different switches, calculation of losses of IGBT and its basic competitor – IGCT is presented. This master’s thesis makes an effort to answer the question if there are at present possibilities of accurate selection of switches for electrical drives of different rates of power and looks at future possible ways of development of semiconductor market.

Solid-State bipolar Marx modulator modeling

A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-mu s output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.

Piikarbidipuolijohdekomponentit tehoelektroniikassa

Piikarbidi (SiC) on tunnettu korkealuokkaisena hioma-aineena ja hiekkapaperin pin-noitteena yli 100 vuoden ajan. Nykyisin ainetta käytetään pääasiassa puolijohteiden raaka-aineena. Piikarbidi on puolijohteena ylivoimainen tavanomaiseen piihin (Si) verrattuna lähes joka suhteessa johtuen sen kiderakenteesta, mutta sen valmistus on osoittautunut erittäin monimutkaiseksi johtuen pääasiassa vaikeudesta kasvattaa riittävän suuria ja laadukkaita SiC-kiteitä. Siksi tehoelektroniikan SiC-puolijohdekomponenttien laajamittaista käyttöä joudutaan yhä odottamaan. Tässä diplomityössä tehdään perusteellinen selvitys, miten piikarbidin valmistuspro-sessit eroavat normaaleista piin valmistusprosesseista, mitä etuja piikarbidin käytöllä saavutetaan ja vastaavasti mitä varjopuolia sillä on. Työssä selvitetään tällä hetkellä markkinoilla olevien SiC-tehopuolijohdekomponenttien ominaisuuksia, ketkä ovat teh-neet tutkimusta alalla, sekä esitetään arvioita SiC-tekniikan tulevaisuuden näkymistä.

Observations of Acoustic Emission in Power Semiconductors

Industrial, electrical power generation, and transportation systems, to name but a few, rely heavily on power electronics to control and convert electrical power. Each of these systems, when encountering an unexpected failure, can cause significant financial losses, or even an emergency. A condition monitoring system would help to alleviate these concerns, but for the time being, there is no generally accepted and widely adopted method for power electronics. Acoustic emission is used as a failure precursor in many applications, but it has not been studied in power electronics so far. In this doctoral dissertation, observations of acoustic emission in power semiconductor components are presented. The acoustic emissions are caused by the switching operation and failure of power transistors. Three types of acoustic emission are observed. Furthermore, aspects related to the measurement and detection of acoustic phenomena are discussed. These include sensor performance and mechanical construction of experimental setups. The results presented in this dissertation are the outset of a research program where it will be determined whether an acoustic-emission-based condition monitoring method can be developed.

Selected Cardiovascular Studies Based on Photoplethysmography Technique

Photoplethysmography (PPG) is a simple and inexpensive optical technique that can be used to detect blood volume changes in the microvascular bed of tissues. There has been a resurgence of interest in the technique in recent years, driven by the demand for low cost, simple and portable technology for the primary care and community based clinical settings and the wide availability of low cost and small semiconductor components, and the advancement of computer-based pulse wave analysis techniques. The present research work deals with the design of a PPG sensor for recording the blood volume pulse signals and carry out selected cardiovascular studies based on these signals. The interaction of light with tissue, early and recent history of PPG, instrumentation, measurement protocol and pulse wave analysis are also discussed in this study. The effect of aging, mild cold exposure, and variation in the body posture on the PPG signal have been experimentally studied.

Photokathoden mit internem DBR-Reflektor als Quellen hochintensiver spinpolarisierter Elektronenstrahlen

Die Erzeugung von Elektronenstrahlen hoher Intensität (I$geq$2,mA) und hoher Spinpolarisation (P$geq$85%) ist für die Experimente an den geplanten glqq Linac Ringgrqq Electron--Ion--Collidern (z.B. eRHIC am Brookhaven National Laboratory) unabdingbar, stellt aber zugleich eine enorme Herausforderung dar. Die Photoemission aus ce{GaAs}--basierten Halbleitern wie z.B. den in dieser Arbeit untersuchten GaAlAs/InGaAlAs Quanten--Übergittern zeichnet sich zwar durch eine hohe Brillanz aus, die geringe Quantenausbeute von nur ca. 1% im Bereich maximaler Polarisation erfordert jedoch hohe Laserintensitäten von mehreren Watt pro $text{cm}^{2}$, was erhebliche thermische Probleme verursacht. rnrnIn dieser Arbeit konnte zunächst gezeigt werden, dass die Lebensdauer einer Photokathode mit steigender Laserleistung bzw. Temperatur exponentiell abnimmt. Durch Einbringen eines DBR--Spiegels zwischen die aktive Zone der Photokathode und ihr Substrat wird ein Großteil des ungenutzten Laserlichts wieder aus dem Kristall herausreflektiert und trägt somit nicht zur Erwärmung bei. Gleichzeitig bildet der Spiegel zusammen mit der Grenzfläche zum Vakuum eine Resonator--Struktur aus, die die aktive Zone umschließt. Dadurch kommt es für bestimmte Wellenlängen zu konstruktiver Interferenz und die Absorption in der aktiven Zone erhöht sich. Beide Effekte konnten durch vergleichenden Messungen an Kathoden mit und ohne DBR--Spiegel nachgewiesen werden. Dabei ergibt sich eine gute Übereinstimmung mit der Vorhersage eines Modells, das auf der dielektrischen Funktion der einzelnen Halbleiterstrukturen beruht. Von besonderer praktischer Bedeutung ist, dass die DBR--Kathode für einen gegebenen Photoemissions-strom eine um einen Faktor $geq$,3{,}5 kleinere Erwärmung aufweist. Dies gilt über den gesamten Wellenlängenbereich in dem die Kathode eine hohe Strahlpolarisation (P$>$80%) produzieren kann, auch im Bereich der Resonanz.rnAus zeitaufgelösten Messungen der Ladungsverteilung und Polarisation lassen sich sowohl Rückschlüsse über die Transportmechanismen im Inneren einer Kathode als auch über die Beschaffenheit ihrer Oberfläche ziehen. Im Rahmen dieser Dissertation konnte die Messgeschwindigkeit der verwendeten Apparatur durch den Einbau eines schnelleren Detektors und durch eine Automatisierung der Messprozedur entscheidend vergrößert und die resultierende Zeitauflösung mit jetzt 1{,}2 Pikosekunden annähernd verdoppelt werden.rnrnDie mit diesen Verbesserungen erhaltenen Ergebnisse zeigen, dass sich der Transport der Elektronen in Superlattice--Strukturen stark vom Transport in den bisher untersuchten Bulk--Kristallen unterscheidet. Der Charakter der Bewegung folgt nicht dem Diffusionsmodell, sondern gibt Hinweise auf lokalisierte Zustände, die nahe der Leitungsbandunterkante liegen und Elektronen für kurze Zeit einfangen können. Dadurch hat die Impulsantwort einer Kathode neben einem schnellen Abfall des Signals auch eine größere Zeitkonstante, die selbst nach 30,ps noch ein Signal in der Größenordnung von ca. 5textperthousand der Maximalintensität erzeugt.

Review and Comparison of Step-Up Transformerless Topologies for Photovoltaic AC-Module Application

This paper presents a comprehensive review of stepup single-phase non-isolated inverters suitable for ac-module applications. In order to compare the most feasible solutions of the reviewed topologies, a benchmark is set. This benchmark is based on a typical ac-module application considering the requirements for the solar panels and the grid. The selected solutions are designed and simulated complying with the benchmark obtaining passive and semiconductor components ratings in order to perform a comparison in terms of size and cost. A discussion of the analyzed topologies regarding the obtained ratings as well as ground currents is presented. Recommendations for topological solutions complying with the application benchmark are provided.

Thermal modelling of semiconductor switches in three-level Neutral Point Clamped Medium Voltage DTC-inverter

The aim of this thesis is to investigate the thermal loading of medium voltage three-level NPC inverter’s semiconductor IGCT switches in different operation points. The objective is to reach both a fairly accurate off-line simulation program and also so simple a simulation model that its implementation into an embedded system could be reasonable in practice and a real time use should become feasible. Active loading limitation of the inverter can be realized with a thermal model which is practical in a real time use. Determining of the component heating has been divided into two parts; defining of component losses and establishing the structure of a thermal network. Basics of both parts are clarified. The simulation environment is Matlab-Simulink. Two different models are constructed – a more accurate one and a simplified one. Potential simplifications are clarified with the help of the first one. Simplifications are included in the latter model and the functionalities of both models are compared. When increasing the calculation time step a decreased number of considered components and time constants of the thermal network can be used in the simplified model. Heating of a switching component is dependent on its topological position and inverter’s operation point. The output frequency of the converter defines mainly which one of the switching components is – because of its losses and heating – the performance limiting component of the converter. Comparison of results given by different thermal models demonstrates that with larger time steps, describing of fast occurring switching losses becomes difficult. Generally articles and papers dealing with this subject are written for two-level inverters. Also inverters which apply direct torque control (DTC) are investigated rarely from the heating point of view. Hence, this thesis completes the former material.

Non-Destructive Evaluation of Ion-Implanted Semiconductor Thin Films Using Photothermal Deflections Spectroscopy

Materials and equipment which fail to achieve the design requirements or projected life due to undetected defects may require expensive repair or early replacement. Such defects may also be the cause of unsafe conditions or catastrophic unexpected failure, and will lead to loss of revenue due to plant shutdown. Non-Destructive Evaluation (NDE) / Non Destructive Testing (NDT) is used for the examination of materials and components without changing or destroying their usefulness. NDT can be applied to each stage of a system’s construction, to monitor the integrity of the system or structure throughout its life.

Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up

Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices. The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs. The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.

Phase discrimination and simultaneous frequency conversion of the orthogonal components of an optical signal by four-wave mixing in an SOA

Simultaneous conversion of the two orthogonal phase components of an optical input to different output frequencies has been demonstrated by simulation and experiment. A single stage of four-wave mixing between the input signal and four pumps derived from a frequency comb was employed. The nonlinear device was a semiconductor optical amplifier, which provided overall signal gain and sufficient contrast for phase sensitive signal processing. The decomposition of a quadrature phase-shift keyed signal into a pair of binary phase-shift keyed outputs at different frequencies was also demonstrated by simulation.

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

Analysis of the lateral diffuse metal-oxide semiconductor (LDMOS) power amplifier for cellular base stations

The primary purpose of this thesis was to present a theoretical large-signal analysis to study the power gain and efficiency of a microwave power amplifier for LS-band communications using software simulation. Power gain, efficiency, reliability, and stability are important characteristics in the power amplifier design process. These characteristics affect advance wireless systems, which require low-cost device amplification without sacrificing system performance. Large-signal modeling and input and output matching components are used for this thesis. Motorola's Electro Thermal LDMOS model is a new transistor model that includes self-heating affects and is capable of small-large signal simulations. It allows for most of the design considerations to be on stability, power gain, bandwidth, and DC requirements. The matching technique allows for the gain to be maximized at a specific target frequency. Calculations and simulations for the microwave power amplifier design were performed using Matlab and Microwave Office respectively. Microwave Office is the simulation software used in this thesis. The study demonstrated that Motorola's Electro Thermal LDMOS transistor in microwave power amplifier design process is a viable solution for common-source amplifier applications in high power base stations. The MET-LDMOS met the stability requirements for the specified frequency range without a stability-improvement model. The power gain of the amplifier circuit was improved through proper microwave matching design using input/output-matching techniques. The gain and efficiency of the amplifier improve approximately 4dB and 7.27% respectively. The gain value is roughly .89 dB higher than the maximum gain specified by the MRF21010 data sheet specifications. This work can lead to efficient modeling and development of high power LDMOS transistor implementations in commercial and industry applications.

Carrier momentum relaxation in highly doped polar semiconductors and semiconductor heterostructures

Highly doped polar semiconductors are essential components of today’s semiconductor industry. Most strikingly, transistors in modern electronic devices are polar semiconductor heterostructures. It is important to thoroughly understand carrier transport in such structures. In doped polar semiconductors, collective excitations of the carriers (plasmons) and the atoms (polar phonons) couple. These coupled collective excitations affect the electrical conductivity, here quantified through the carrier mobility. In scattering events, the carriers and the coupled collective modes transfer momentum between each other. Carrier momentum transferred to polar phonons can be lost to other phonons through anharmonic decay, resulting in a finite carrier mobility. The plasmons do not have a decay mechanism which transfers carrier momentum irretrievably. Hence, carrier-plasmon scattering results in infinite carrier mobility. Momentum relaxation due to either carrier–plasmon scattering or carrier–polar-phonon scattering alone are well understood. However, only this thesis manages to treat momentum relaxation due to both scattering mechanisms on an equal footing, enabling us to properly calculate the mobility limited by carrier–coupled plasmon–polar phonon scattering. We achieved this by solving the coupled Boltzmann equations for the carriers and the collective excitations, focusing on the “drag” term and on the anharmonic decay process of the collective modes. Our approach uses dielectric functions to describe both the carrier-collective mode scattering and the decay of the collective modes. We applied our method to bulk polar semiconductors and heterostructures where various polar dielectrics surround a semiconducting monolayer of MoS2, where taking plasmons into account can increase the mobility by up to a factor 15 for certain parameters. This screening effect is up to 85% higher than if calculated with previous methods. To conclude, our approach provides insight into the momentum relaxation mechanism for carrier–coupled collective mode scattering, and better tools for calculating the screened polar phonon and interface polar phonon limited mobility.