Frequency characteristics and dynamical behaviors of self-modulation in vertical-cavity surface-emitting lasers

The frequency characteristics of a VCSEL with a quarter-wave plate (QWP) and an external reflector are investigated with the translation matrix of the vectorial field. Two series of eigenmode with a shift of half the free spectrum range are linearly polarized, respectively, along the neutral axes of QWP. We also numerically explore the polarization self-modulation phenomenon by using a vectorial laser equation and considering the inhomogeneous broadening of the gain medium. If the external cavity is so short that the shift is bigger than the homogeneous broadening, two stable longitudinal modes oscillate, respectively, on the neutral axes of QWP because they consume different carriers. With a long external cavity, the competition of the modes for the common carriers causes the intensity fluctuation of the modes with a period of one round-trip time of the external cavity.

1.55-mu m InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with lnGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 mum. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does. (C) 2004 Elsevier Ltd. All rights reserved.

Post-processing of vertical-cavity surface-emitting lasers for transverse mode and polarization control

The operation on how high quality single-mode operation can be readily attained on etching circles in multimode devices is discussed. Arrays of such spots can also be envisaged. Control of the polarization state is also achieved by use of deep line etches. The output filaments and beam shapes of the conventional multimode vertical cavity surface emitting lasers (VCSEL) is shown to be engineered in terms of their positions, widths, and polarizations by use of focused ion beam etching (FIBE). Several GaAs quantum well top-emitting devices with cavity diameters of 10 μm and 18 μm were investigated.