Luminescence properties of Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors prepared by spray pyrolysis process

Starting from metal nitrate aqueous solutions and H3BO3, Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors were synthesized by spray pyrolysis followed by annealing at high temperature. The obtained phosphor particles have spherical morphology with size in the range 0.5-2 mu m. Independent of the x values in Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors, the Eu3+ ion shows its characteristic D-5(0), (1)-F-7(J) (J = 0, 1, 2, 3, 4) transitions with D-5(0)-F-7(2) red emission (612 nm) as the most prominent group. The photoluminescence intensity of phosphors increases with the increase of x value in Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) due to an energy migration process like Gd3+-(Gd3+)(n)-Eu3+ that occurred in the host materials.

Luminescence properties of Eu-complex formations into ordered mesoporous silica particles obtained by the spray pyrolysis process

Ordered mesoporous, highly luminescent SiO2 particles have been synthesized by spray pyrolysis from solutions containing tetraethylorthosilicate (TEOS), Eu(NO3)3.6H2O, and cetyltrimethylammonium bromide (CTAB) as structure-directing agents. The 1,10-phenantroline (Phen) molecules were coordinated in a post-synthesis step by a simple wet impregnation method. In addition, other matrices were also prepared by the encapsulation of europium complex Eu(fod)3 (where fod = 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionato) into mesoporous silica, and then the Phen molecules were encapsulated by different impregnation steps, after which the luminescence properties were investigated. The obtained materials were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), powder x-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. Powders with polydisperse spherical grains were obtained, displaying an ordered hexagonal array of mesochannels. Luminescence results revealed that Phen molecules had been successfully coordinated as an additional ligand in the Eu(fod)3 complex into the channels of the mesoporous particles without disrupting the structure.

Sub-micrometre spherical particles of TiO2, ZrO2, and PZT by nebulized spray pyrolysis of metal-organic precursors

Nebulized spray pyrolysis of metal-organic precursors in methanol solution has been employed to prepare powders of TiO2, ZrO2 and PbZr0.5Ti0.5O3 (PZT). This process ensures complete decomposition of the precursors at relatively low temperatures. The particles have been examined by scanning and transmission electron microscopy as well as X-ray diffraction. As prepared, the particles are hollow agglomerates of diameter 0.1-1.6 mu m, but after heating to higher temperatures the ultimate size of the particles comprising the agglomerates are considerably smaller (0.1 mu m or less in diameter) and crystalline.

Metal-insulator transition characteristics of vanadium dioxide thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture

We report the synthesis of high quality vanadium dioxide (VO2) thin films by a novel spray pyrolysis technique, namely ultrasonic nebulized spray pyrolysis of aqueous combustion mixture (UNSPACM). This simple and cost effective two step process involves synthesis of a V2O5 film on an LaAlO3 substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (p21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal-insulator transition (MIT) was observed at 61 degrees C, where the resistivity changes by four orders of magnitude. Activation energies for the low conduction phase and the high conduction phase were obtained from temperature variable resistance measurements. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 mu m. This indicates the suitability of the films for optical switching applications at infrared frequencies.

Synthesis and characterization of Y0.9-xGdxEu0.1BO3 phosphors by spray drying process

Y0.9-xGdxEu0.1BO3 phosphors were synthesized by spray drying (SD) method, and the results were compared with those by conventional solid state (SS) and citrate gel (GC) methods. The PL intensity of phosphors increases with the increase of x value in Y0.9-xGdxEu0.1BO3 (prepared by SD) due to an energy migration process like Gd3+ - (Gd3+)(n) - Eu3+ occurred in the material. Compared with the latter two methods, the phosphor particles prepared by spray drying method have a better morphology, such as homogeneous size (about 1similar to3 mum) with spherical shape and smooth surface. Furthermore, the spray drying-derived phosphors have higher photoluminescence (PL) intensity than those by citrate gel method, but still a little lower than those by the solid state method.

Morphology control and luminescence properties of YAG : Eu phosphors prepared by spray pyrolysis

Starting from nitrate aqueous solutions with citric acid and polyethylene glycol (PEG) as additives, Y3Al5O12:Eu (YAG:Eu) phosphors were prepared by a two-step spray pyrolysis (SP) method. The obtained YAG:Eu phosphor particles have spherical shape, submicron size and smooth surface. The effects of process conditions of the spray pyrolysis on the crystallinity, morphology and luminescence properties of phosphor particles were investigated. The emission intensity of the phosphors increased with increasing of sintering temperature and solution concentration due to the increase of the crystallinity and particles size, respectively. Adequate amount of PEG was necessary for obtaining spherical particles, and the optimum emission intensity could be obtained when the concentration of PEG was 0.10 g/ml in the precursor solution. Compared with the YAG:Eu phosphor prepared by citrate-gel (CG) method with non-spherical morphology, spherical YAG:Eu phosphor particles showed a higher emission intensity.

Automation of Chemical Spray Pyrolysis Unit and Fabrication of Sprayed CuInS2/In2S3 Solar Cell

Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.

Highly conductive and transparent ZnO thin film using Chemical Spray Pyrolysis technique: Effect of doping and deposition parameters

In the present work we report the preparation details studies on ZnO thin films. ZnO thin films are prepared using cost effective deposition technique viz., Chemical Spray Pyrolysis (CSP). The method is very effective for large area preparation of the ZnO thin film. A new post-deposition process could also be developed to avoid the adsorption of oxygen that usually occurs after the spraying process i.e., while cooling. Studies were done by changing the various deposition parameters for optimizing the properties of ZnO thin film. Moreover, different methods of doping using various elements are also tried to enhance the conductivity and transparency of the film to make these suitable for various optoelectronic applications.

Transition from n- to p-type of spray pyrolysis deposited Cu doped ZnO thin films for NO2 sensing

The structural, optical, and gas-sensing properties of spray pyrolysis deposited Cu doped ZnO thin films were investigated. Gas response of the undoped and doped films to N02 (oxidizing) gas shows an increase and decrease in resistance, respectively, indicating p-type conduction in doped samples. The UV-Vis spectra of the films show decrease in the bandgap with increasing Cu concentration in ZnO. The observed p-type conductivity is attributed to the holes generated by incorporated Cu atoms on Zn sites in ZnO thin films. The X-ray diffraction spectra showed that samples are polycrystalline with the hexagonal wurtzite structure and increasing the concentration of Cu caused a decrease in the intensity of the dominant (002) peak. The surface morphology of films was studied by scanning electron microscopy and the presence of Cu was also confirmed by X-ray photoelectron spectroscopy. Seebeck effect measurements were utilized to confirm the p-type conduction of Cu doped ZnO thin films. Copyright © 2009 American Scientific Publishers All rights reserved.

The utilization of waste date seed as bio-oil and activated carbon by pyrolysis process

The renovation of biomass waste in the form of date seed waste into activated carbon and biofuel by fixed bed pyrolysis reactor has been focused in this study to obtain gaseous, liquid, and solid products. The date seed in particle form is pyrolysed in an externally heated fixed bed reactor with nitrogen as the carrier gas. The reactor is heated from 400◦C to 600◦C. A maximum liquid yield of 50wt.% and char of 30wt.% are obtained at a reactor bed temperature of 500◦C with a running time of 120 minutes. The oil is found to possess favorable flash point and reasonable density and viscosity. The higher calorific value is found to be 28.636 MJ/kg which is significantly higher than other biomass derived. Decolonization of 85–97% is recorded for the textile effluent and 75–90% for the tannery effluent, in all cases decreasing with temperature increase. Good adsorption capacity of the prepared activated carbon in case of diluted textile and tannery effluent was found.

Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis

PbSnS2 thin film has been prepared for the first time by spray pyrolysis technique on FTO substrate at 570K. The preliminary optical and structural characteristics of the film have been reported. The optical studies showed that the value of the fundamental absorption edge lies at 1.47eV and a low energy absorption band tail has been observed. The prepared film is p- type electrical conductivity, polycrystalline in nature and has an orthorhombic crystal structure. The value of an average grain size of the film is 350Å.

Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis

A novel mechanism is proposed for efficient manipulation of transport forces acting on the droplets during spray pyrolytic deposition of thin films. A ‘‘burst mode’’ technique of spraying is used to adjust the deposition conditions so as to transport the droplets under the new mechanism. Transparent, conducting thin films of undoped tin oxide prepared by this method showed significant improvement in growth rate. The films are found to be of fairly good quality with optical transmission of 82% and sheet resistance of 35 Ω/☒. The films are chemically homogeneous and grow preferentially along 〈200〉 direction.

Ultrasonic spray pyrolysis of CZTS solar cell absorber layers and characterization studies

CZTS (Copper Zinc Tin Sulphide) is a wide band gap quartnery chalcopyrite which has a band gap of about 1.45 eV and an absorption coefficient of 10(4) cm(-1); thus making it an ideal material to be used as an absorber layer in solar cells. Ultrasonic Spray Pyrolysis is a deposition technique, where the solution is atomized ultrasonically, thereby giving a fine mist having a narrow size distribution which can be used for uniform coatings on substrates. An Ultrasonic Spray Pyrolysis equipment was developed and CZTS absorber layers were successfully grown with this technique on soda lime glass substrates using aqueous solutions. Substrate temperatures ranging from 523 K to 723 K were used to deposit the CZTS layers and these films were characterized using SEM, EDAX and XRD. It was observed that the film crystallized in the kesterite structure and the best crystallites were obtained at 613 K. It was observed that the grain size progressively increased with temperature. The optical band gap of the material was obtained as 1.54 eV.

Oriented ferroelectric thin films of PbTiO3, (Pb,La)TiO3, and Pb(Zr,Ti)O3 by nebulized spray pyrolysis

Nebulized spray pyrolysis provides a good low?temperature chemical route for preparing thin films of PbTiO3, (Pb0.9,La0.1)TiO3 and Pb(Zr0.52,Ti0.48)O3. The films are a? or c? axis oriented, with spherical grains of ?30 nm and give satisfactory P?E hysteresis loops. © 1995 American Institute of Physics.