Modification-related porosity formation in hypoeutectic aluminum-silicon alloys

A series of aluminum-10 wt pet silicon castings were produced in sand molds to investigate the effect of modification on porosity formation. Modification with individual additions of either strontium or sodium resulted in a statistically significant increase in the level of porosity compared to unmodified castings. The increase in porosity with modification is due to the presence of numerous dispersed pores, which were absent in the unmodified casting. It is proposed that these pores form as a result of differences in size of the aluminum-silicon eutectic grains between unmodified and modified alloys. A geometric model is developed to show how the size of eutectic grains can influence the amount and distribution of porosity. Unlike traditional feeding-based models, which incorporate the effect: of microstructure on permeability, this model considers what happens when liquid is isolated from the riser and can no longer flow. This simple isolation model complements rather than contradicts existing theories on modification-related porosity formation and should be considered in the development of future comprehensive models.

Columnar to equiaxed transition of eutectic in hypoeutectic aluminium-silicon alloys

Directional solidification of unmodified and strontium modified binary, high-purity aluminium-7 wt% silicon and commercial A356 alloys has been carried out to investigate the mechanism of eutectic solidification. The microstructure of the eutectic growth inter-face was investigated with optical microscopy and Electron Backscattering Diffraction (EBSD). In the commercial alloys, the eutectic solidification inter-face extends in the growth direction and creates a eutectic mushy zone. A planar eutectic growth front is observed in the high-purity alloys. The eutectic aluminium has mainly the same crystallographic orientation as the dendrites in the unmodified alloys and the strontium modified high-purity alloy. A more complex eutectic grain structure is found in the strontium modified commercial alloy. A mechanism involving constitutional undercooling and a columnar to equiaxed transition explains the differences between pure and commercial alloys. It is probably caused by the segregation of iron and magnesium and the activation of nucleants in the commercial alloy. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Manufacturing and characterization of amorphous silicon alloys passivation layers for silicon hetero-junction solar cells

Nel presente lavoro di tesi magistrale sono stati depositati e caratterizzati film sottili (circa 10 nm) di silicio amorfo idrogenato (a-Si:H), studiando in particolare leghe a basso contenuto di ossigeno e carbonio. Tali layer andranno ad essere implementati come strati di passivazione per wafer di Si monocristallino in celle solari ad eterogiunzione HIT (heterojunctions with intrinsic thin layer), con le quali recentemente è stato raggiunto il record di efficienza pari a 24.7% . La deposizione è avvenuta mediante PECVD (plasma enhanced chemical vapour deposition). Tecniche di spettroscopia ottica, come FT-IR (Fourier transform infrared spectroscopy) e SE (spettroscopic ellipsometry) sono state utilizzate per analizzare le configurazioni di legami eteronucleari (Si-H, Si-O, Si-C) e le proprietà strutturali dei film sottili: un nuovo metodo è stato implementato per calcolare i contenuti atomici di H, O e C da misure ottiche. In tal modo è stato possibile osservare come una bassa incorporazione (< 10%) di ossigeno e carbonio sia sufficiente ad aumentare la porosità ed il grado di disordine a lungo raggio del materiale: relativamente a quest’ultimo aspetto, è stata sviluppata una nuova tecnica per determinare dagli spettri ellisometrici l’energia di Urbach, che esprime la coda esponenziale interna al gap in semiconduttori amorfi e fornisce una stima degli stati elettronici in presenza di disordine reticolare. Nella seconda parte della tesi sono stati sviluppati esperimenti di annealing isocrono, in modo da studiare i processi di cristallizzazione e di effusione dell’idrogeno, correlandoli con la degradazione delle proprietà optoelettroniche. L’analisi dei differenti risultati ottenuti studiando queste particolari leghe (a-SiOx e a-SiCy) ha permesso di concludere che solo con una bassa percentuale di ossigeno o carbonio, i.e. < 3.5 %, è possibile migliorare la risposta termica dello specifico layer, ritardando i fenomeni di degradazione di circa 50°C.

Solidification mechanisms of unmodified and strontium-modified hypereutectic aluminium-silicon alloys

The effects of strontium on the solidi. cation mode of hypereutectic aluminium-silicon alloys have been studied. Samples were prepared from an aluminium-17wt% silicon-based alloy and strontium was added at several different concentrations. The development of the microstructure was investigated by cooling curve analysis, interrupted solidi. cation experiments and optical and scanning electron microscopy. It was found that nucleation of primary silicon is suppressed by additions of strontium. The suppressed nucleation results in supersaturation of the liquid prior to nucleation, and an increased growth rate after nucleation. As a result, the silicon crystals become less faceted and more dendritic with increasing strontium additions. Increasing the strontium concentration slightly refined the eutectic spacing and introduced a small amount of fibrous silicon. Electron back-scatter diffraction measurements were performed to determine the crystallographic relation between the primary and eutectic silicon phases. The eutectic silicon in the unmodified alloy does not have any crystallographic relationship with the primary silicon crystals. In contrast, the eutectic silicon crystals in the strontium-modified alloys often share an identical or twin relationship with nearby primary silicon crystals. The incidence of twinning within primary silicon crystals was relatively low and did not appear to increase with strontium additions.

Eutectic grains in unmodified and strontium-modified hypoeutectic aluminum-silicon alloys

Additions of strontium to hypoeutectic aluminum-silicon alloys modify the morphology of the eutectic silicon phase from a coarse platelike structure to a fine fibrous structure. Thermal analysis, interrupted solidification, and microstructural examination of sand castings in this work revealed that, in addition to a change in silicon morphology, modification with strontium also causes an increase in the size of eutectic grains. The eutectic grain size increases because fewer grains nucleate, possibly due to poisoning of the phosphorus-based nucleants, that are active in the unmodified alloy. A simple growth model is developed to estimate the interface velocity during solidification of a eutectic grain. The model confirms, independent of microstructural observations, that the addition of 100 ppm strontium increases the eutectic grain size by at least an order of magnitude compared with the equivalent unmodified alloy. The model predicts that the growth velocity varies significantly during eutectic growth. At low strontium levels, these variations may be sufficient to cause transitions between flake and fibrous silicon morphologies depending on the casting conditions. The model can be used to rationally interpret the eutectic grain structure and silicon morphology of fully solidified aluminum-silicon castings and, when coupled with reliable thermal data, can be used to estimate the eutectic grain size.

Eutectic grain size and strontium concentration in hypoeutectic aluminium-silicon alloys

Recently it has been shown that modification with strontium causes an increase in the size of eutectic grains. The eutectic grain size increases because there are fewer nucleation events, possibly due to the poisoning of phosphorus-based nuclei that are active in the unmodified alloy. The current paper investigates the effect of strontium concentration on the eutectic grain size. In the aluminium-10 wt.% silicon alloy used in this research, for fixed casting conditions, the eutectic grain size increases as the strontium concentration increases up to approximately 150ppm, beyond which the grain size is relatively stable. This critical strontium concentration is likely to differ depending on the composition of the base alloy, including the concentration of minor elements and impurities. It is concluded that processing and in-service properties of strontium modified aluminium-silicon castings are likely to be more stable if a minimum critical strontium concentration is exceeded. If operating below this critical strontium concentration exceptional control over composition and casting conditions is required. (c) 2005 Elsevier B.V. All rights reserved.

Evaluation of silicon twinning in hypo-eutectic Al-Si alloys

It is generally accepted that growth of eutectic silicon in aluminium-silicon alloys occurs by a twin plane re-entrant edge (TPRE) mechanism. It has been proposed that modification of eutectic silicon by trace additions occurs due to a massive increase in the twin density caused by atomic effects at the growth interface. In this study, eutectic microstructures and silicon twin densities in samples modified by elemental additions of barium (Ba), calcium (Ca), yttrium (Y) and ytterbium (Yb) (elements chosen due to a near-ideal atomic radii for twinning) in an A356.0 alloy have been determined by optical microscopy, thermal analysis, X-ray diffractometry (XRD) and transmission electron microscopy (TEM). Addition of barium or calcium caused the silicon structure to transform to a fine fibrous morphology, while the addition of yttrium or ytterbium resulted in a refined plate-like eutectic structure. Twin densities in all modified samples are higher than in unmodified alloys, and there are no significant differences between fine fibrous modification (by Ba and Ca) and refined plate-like modification (by Y and Yb). The twin density in all modified samples is less than expected based on the predictions by the impurity induced twining model. Based on these results it is difficult to explain the modification with Ba, Ca, Y and Yb by altered twin densities alone.

Evaluation of Ti(3)Si Phase Stability from Heat-Treated, Rapidly Solidified Ti-Si Alloys

Ti-base alloys containing significant amounts of silicon have been considered for high temperature structural applications. Thus, information concerning phase stability on the Ti-Si system is fundamental and there are not many investigations covering the phase stability of the Ti(3)Si phase, specially its dependence on oxygen/nitrogen contamination. In this work the stability of this phase has been evaluated through heat-treatment of rapidly solidified Ti-rich Ti-Si alloys at 700 A degrees C and 1000 A degrees C. The rapidly solidified splats presented nanometric scale microstructures which facilitated the attainment of equilibrium conditions. The destabilization of Ti(3)Si due to oxygen/nitrogen contamination has been noted.

Eutectic nucleation and growth in hypoeutectic Al-SI alloys at different strontium levels

The effects of different levels of strontium on nucleation and growth of the eutectic in a commercial hypoeutectic Al-Si foundry alloy have been investigated by optical microscopy and electron backscattering diffraction (EBSD) mapping by scanning electron microscopy (SEM). The microstructural evolution of each specimen during solidification was studied by a quenching technique at different temperatures and Sr contents. By comparing the orientation of the aluminum in the eutectic to that of the surrounding primary aluminum dendrites by EBSD, the eutectic formation mechanism could be determined. The results of these studies show that the eutectic nucleation mode, and subsequent growth mode, is strongly dependent on Sr level. Three distinctly different eutectic growth modes were found, in isolation or sometimes together, but different for each Sr content. At very low Sr contents, the eutectic nucleated and grew from the primary phase. Increasing the Sr level to between 70 and 110 ppm resulted in nucleation of independent eutectic grains with no relation to the primary dendrites. At a Sr level of 500 ppm, the eutectic again nucleated on and grew from the primary phase while a well-modified eutectic structure was still present. A slight dependency of eutectic growth radially from the mold wall opposite the thermal gradient was observed in all specimens in the early stages of eutectic solidification.

Eutectic modification and microstructure development in Al-Si alloys

Recent increasing applications for cast Al-Si alloys are particularly driven by the need for lightweighting components in the automotive sector. To improve mechanical properties, elements such as strontium, sodium and antimony can be added to modify the eutectic silicon from coarse and plate-like to fine and fibrous morphology. It is only recently being noticed that the morphological transformation resulting from eutectic modification is also accompanied by other, equally significant, but often unexpected changes. These changes can include a 10-fold increase in the eutectic grain size, redistribution of low-melting point phases and porosity as well as surface finish, consequently leading to variations in casting quality. This paper shows the state-of-the-art in understanding the mechanism of eutectic nucleation and growth in Al-Si alloys, inspecting samples, both quenched and uninterrupted, on the macro, micro and nano-scale. It shows that significant variations in eutectic nucleation and growth dynamics occur in AI-Si alloys as a function of the type and amount of modifier elements added. The key role of AIP particles in nucleating silicon is demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

Determination of eutectic solidification mode in Sr-modified hypoeutectic Al-Si alloys by EBSD

The effect of eutectic modification by strontium on nucleation and growth of the eutectic in hypoeutectic Al-Si foundry alloys has been investigated by electron back-scattering diffraction (EBSD) mapping. Specimens were prepared from three hypoeutectic AlSi base alloys with 5, 7 and 10 mass%Si and with different strontium contents up to 740 ppm for modification of eutectic silicon. By comparing the orientation of the aluminium in the eutectic to that of the surrounding primary aluminium dendrites? the growth mode of the eutectic could be determined. The mapping results indicate that the eutectic grew from the primary phase in unmodified alloys. When the eutectic was modified by strontium, eutectic grains nucleated separately from the primary dendrites. However, in alloys with high strontium levels, the eutectic again grew from the primary phase. These observed effects of strontium additions on the eutectic solidification mode are independent of silicon content in the range between 5 and 10 mass%Si.

Eutectic growth mode in strontium, antimony and phosphorus modified hypoeutectic Al-Si foundry alloys

The effect of strontium (Sr), antimony (Sb) and phosphorus (P) on nucleation and growth mode of the eutectic in hypoeutectic Al-10 mass%Si alloys has been investigated by electron back-scattering diffraction (EBSD) mapping. Specimens were prepared from a hypoeutectic Al-10 mass%Si base alloy, adding different levels of strontium, antimony and phosphorus for modification of eutectic silicon. By comparing the orientation of the aluminium in the eutectic to that of the surrounding primary aluminium dendrites, the solidification mode of the eutectic could be determined. The results of these studies show that the eutectic nucleation mode, and subsequent growth mode, is strongly dependent on additive elements. The EBSD mapping results indicate that the eutectic grew from the primary phase in unmodified and phosphorus-containing alloys. When the eutectic was modified by strontium or antimony, eutectic grains nucleated and grew separately from the primary dendrites.

Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position ("sub-pixel") is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.