The cyclic antimicrobial peptide RTD-1 induces stabilized lipid-peptide domains more efficiently than its open-chain analogue

The effects of a mammalian cyclic antimicrobial peptide, rhesus theta defensin 1 (RTD-1) and its open chain analogue (oRTD-1), on the phase behaviour and structure of model membrane systems (dipalmitoyl phosphatidylcholine, DPPC and dipalmitoyl phosphatidylglycerol, DPPG) were studied. The increased selectivity of RTD-1 for anionic DPPG over zwitterionic DPPC was shown by differential scanning calorimetry. RTD-1, at a molar peptide-lipid ratio of 1:100, induced considerable changes in the phase behaviour of DPPG, but not of DPPC. The main transition temperature, T-m, Was unchanged, but additional phase transitions appeared above T-m. oRTD-1 induced similar effects. However, the effects were not observable below a peptide:lipid molar ratio of 1:50, which correlates with the weaker biological activity of oRTD-1. Small-and wide-angle X-ray scattering revealed for DPPG the appearance of additional structural features induced by RTP-1 above T-m, which were interpreted as correlated lamellar structures, with increased order of the fatty acyl side chains of the lipid. It is proposed that after initial electrostatic interaction of the cationic rim of the peptide with the anionic DPPG headgroups, leading to stabilized lipid-peptide clusters, the hydrophobic face of the peptide assists in its interaction with the fatty acyl side chains eventually leading to membrane disruption. (C) 2004 Federation of European Biochemical Societies. Published by Elsevier B.V. All rights reserved.

RTD与PHEMT集成的几个关键工艺

在新型的共振隧穿二极管(RTD)器件与PHEMT器件单片集成材料结构上,研究和分析了分立器件的制作工艺,给出了分立器件的制作工艺参数.利用上述工艺成功制作了RTD和PHEMT器件,并在室温下分别测试了RTD器件和PHEMT器件的电学特性.测试表明:在室温下,RTD器件的峰电流密度与谷电流密度之比提高到1.78;PHEMT器件的最大跨导约为120mS/mm,在Vgs＝0.5V时的饱和电流约为270mA/mm.这将为RTD集成电路的研制奠定工艺基础.

Development of an operational tool for oil spill forecast: application to oil exposed regions

Tese de doutoramento, Ciências do Mar, da Terra e do Ambiente (Modelação), Faculdade de Ciências e Tecnologia, Universidade do Algarve, 2014

RTD与PHEMT的集成研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

采用干法刻蚀技术实现RTD与HEMT单片集成的方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

基于RTD与EHEMT的超高速全并行模数转换器

本发明公开了一种基于共振隧穿二极管与增强型高电子迁移率晶体管的超高速全并行模数转换器，该模数转换器由2n-1个比较器和n个编码器构成，n为模数转换器的位数;其中，各比较器并联连接，输入各比较器的模拟信号采用并联方式输入，温度码的各位变换在一个单一的步骤内一次性完成;各编码器并联连接，输入各编码器的信号也采用并联方式输入，温度码到二进制码的变换也在一个单一的步骤内一次性完成。利用本发明，实现了极其简单的比较器电路和简单的编码器电路，大大简化了电路结构，降低了功耗，实现了超高速、低功耗的设计目标。

RTD、HEMT 在频率合成和分频中的应用

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-08T13:17:09Z No. of bitstreams: 1 杜睿博士论文.pdf: 12005163 bytes, checksum: a1d0c576ba88e74a6d3e0e409070bc7f (MD5)

基于RTD与CMOS的新型数字电路设计

纳米电子器件RTD与CMOS电路结合，这种新型电路不仅保持了CMOS动态电路的所有优点，而且在工作速度、功耗、集成度以及电路噪声免疫性方面都得到了不同程度的改善和提高。文中对数字电路中比较典型的可编程逻辑门、全加器电路进行了设计与模拟，并在此基础上对4*4阵列纳米流水线乘法器进行了结构设计。同时讨论了在目前硅基RTD器件较低的PVCR值情况下实现相应电路的可行性。

RTD高频等效电路的研究及应用现状

详述了RTD器件各高频等效电路模型及其各模型的应用与适用条件。并在40GHz以下的频率范围内，用CECM描述RTD器件的高频特性也较成功。