Simplified theory of carrier back-scattering in semiconducting carbon nanotubes: A Kane's model approach

We present a simplified yet analytical formulation of the carrier backscattering coefficient for zig-zag semiconducting single walled carbon nanotubes under diffusive regime. The electron-phonon scattering rate for longitudinal acoustic, optical, and zone-boundary phonon emissions for both inter- and intrasubband transition rates have been derived using Kane's nonparabolic energy subband model.The expressions for the mean free path and diffusive resistance have been formulated incorporating the aforementioned phonon scattering. Appropriate overlap function in Fermi's golden rule has been incorporated for a more general approach. The effect of energy subbands on low and high bias zones for the onset of longitudinal acoustic, optical, and zone-boundary phonon emissions and absorption have been analytically addressed. 90% transmission of the carriers from the source to the drain at 400 K for a 5 mu m long nanotube at 105 V m(-1) has been exhibited. The analytical results are in good agreement with the available experimental data. (c) 2010 American Institute of Physics.

Back scattering from nano-sized ZnO colloids

We report enhanced back scattering in nanometer-sized ZnO colloids prepared in two different media, by different methods. The FWHM of the back scattered cone and hence the mean free path varied with concentration of ZnO as well as particle size. The Lorentzian profile of backscattered cone indicates the presence of coherence.

Progetto di un sistema a microcontrollore per modulazione back-scattering uwb

La tesi tratta il progetto di una piattaforma di simulazione per modulazioni back-scatter UWB su un sistema a microcontrollore PIC. Il sistema utilizza uno switch a UWB per eseguire la modulazione, modificando le condizioni di carico d'antenna; il software implementa la modulazione attraverso la variazione del segnale di controllo dello switch e si interfaccia con l'utente attraverso l'uso di una periferica USB, permettendo la modifica runtime della configurazione. Si interfaccia inoltre con strumenti esterni attraverso segnali di sincronizzazione.

Back scattering of a plane electromagnetic wave from an infinite cylinder of plasma with small axial gradients and arbitrary radial gradients of electron density : normal incidence /

"Prepared under contract no. NOrd 18053."

Controllo ultra-low power di un modulatore back-scattering per applicazioni di localizzazione in sistemi RFID

In questa tesi viene elaborata un'applicazione ultra-low power (ULP) basata su microcontrollore, per implementare la procedura di controllo di diversi circuiti di un tag RFID. Il tag preso in considerazione è pensato per lavorare in assenza di batteria, da cui la necessita' di ridurre i consumi di potenza. La sua attivazione deve essere inoltre comandata attraverso un'architettura Wake up Radio (WuR), in cui un segnale di controllo radio indirizza e attiva il circuito. Nello specifico, la rete di decodifica dell'indirizzo è stata realizzata mediante il modulo di comunicazione seriale del microcontrollore. Nel Capitolo 1 verrà introdotto il tema dell'Energy Harvesting. Nel Capitolo 2 verrà illustrata l'architettura del sistema nel suo complesso. Nel Capitolo 3 verrà spiegato dettagliatamente il funzionamento del microcontrollore scelto. Il Capitolo 4 sarà dedicato al firmware implementato per svolgere le operazioni fondamentali imputate al micro per i compiti di controllo. Verrà inoltre introdotto il codice VHDL sviluppato per emulare l'output del modulo WuR mediante un FPGA della famiglia Cyclone II. Nel Capitolo 5 verrà presentata una stima dei consumi del microcontrollore in funzione dei parametri di configurazione del sistema. Verrà inoltre effettuato un confronto con un altro microcontrollore che in alcune condizioni potrebbe rappresentare iun'alternativa valida di progetto. Nei Capitoli 6 e 7 saranno descritti possibili sviluppi futuri e conclusioni del progetto. Le specifiche di progetto rilevanti della tesi sono: 1. minimo consumo energetico possibile del microcontrollore ULP 2. elevata rapidità di risposta per la ricezione dei tag, per garantire la ricezione di un numero maggiore possibile di indirizzi (almeno 20 letture al secondo), in un range di tempo limitato 3. generazione di un segnale PWM a 100KHz di frequenza di commutazione con duty cycle 50% su cui basare una modulazione in back-scattering.

RBS/channeling study and photoluminscence properties of Er-implanted GaN

The Raman back scattering/channeling technique was used to analyze the damage recovery at different annealing temperatures and to determine the lattice location of the Er-implanted GaN samples. A better damage recovery was observed with increasing annealing temperature below 1000degreesC, but a complete recovery of the implantation damage cannot be achieved. For a sample annealed for at 900degreesC 30 min the Er and Ga angular scans across the <0001> axis was measured indicating that about 76% of Er ions occupies substitutional sites. Moreover, the photoluminscence (PL) properties of Er-implanted GaN thin films have been also studied. The experimental results indicate that those samples annealed at a higher temperature below 1000degreesC had a stronger 1539nm PL intensity. The thermal quenching of PL intensity for samples annealed at 900degreesC measured at temperatures from 15K to 300K is 30%.

Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer

We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.

Ultra-long raman laser with a feedback based on the Rayleigh scattering

This paper reports the Rayleigh scattering effects in ultra-long Raman fibre laser. It has been found that in a long fibre cavity (-100 km) the distributed feedback due to Rayleigh back scattering at propagation of light between fibre Bragg grating reflectors may be comparable with the lumped feedback provided by the FBG itself. As a result, Raman lasing in the fibre span limited by lumped (FBG) reflector at one side only appears possible due to significant reflection from the RS-based "random" distributed mirror at the other side. Thus, it concludes that a distributed Rayleigh scattering "random" mirror can form a cavity together with a single FBG spliced to the opposite cavity end.

Ultra-long raman laser with a feedback based on the Rayleigh scattering

This paper reports the Rayleigh scattering effects in ultra-long Raman fibre laser. It has been found that in a long fibre cavity (-100 km) the distributed feedback due to Rayleigh back scattering at propagation of light between fibre Bragg grating reflectors may be comparable with the lumped feedback provided by the FBG itself. As a result, Raman lasing in the fibre span limited by lumped (FBG) reflector at one side only appears possible due to significant reflection from the RS-based "random" distributed mirror at the other side. Thus, it concludes that a distributed Rayleigh scattering "random" mirror can form a cavity together with a single FBG spliced to the opposite cavity end.

Raman and infrared spectroscopic study of kamphaugite-(Y)

We have studied the carbonate mineral kamphaugite-(Y)(CaY(CO3)2(OH)·H2O), a mineral which contains yttrium and specific rare earth elements. Chemical analysis shows the presence of Ca, Y and C. Back scattering SEM appears to indicate a single pure phase. The vibrational spectroscopy of kamphaugite-(Y) was obtained using a combination of Raman and infrared spectroscopy. Two distinct Raman bands observed at 1078 and 1088cm(-1) provide evidence for the non-equivalence of the carbonate anion in the kamphaugite-(Y) structure. Such a concept is supported by the number of bands assigned to the carbonate antisymmetric stretching mode. Multiple bands in the ν4 region offers further support for the non-equivalence of carbonate anions in the structure. Vibrational spectroscopy enables aspects of the structure of the mineral kamphaugite-(Y) to be assessed.

Study of the effect of alkali mixture on V-O bond length in Oxyfluoro Vanadate glasses using Raman spectroscopy

Raman spectroscopic study on Oxyfluoro Vanadate glasses containing various proportions of lithium fluoride and rubidium fluoride was carried out to see an effect of mixture of alkali on vanadium-oxygen (V-O) bond length. Glasses with a general formula 40V(2)O(5) - 30BaF(2) - (30 - x) LiF - xRbF (x = 0-30) were prepared. Room temperature Raman spectra of these glass samples were recorded in back scattering geometry. The data presented is in ``reduced Raman intensity'' form with maximum peak scaled to 100. We have used v = Aexp(BR), where A and B are fitting parameters, to correlate the bond length R with Raman scattering frequency v. We observed that variation in bond length and its distribution about a most probable value can be correlated to the alkali environment present in these glasses. We also observed that all rubidium environment around the network forming unit is more homogenous than all lithium environment.

Raman spectroscopy explores molecular structural signatures of hidden materials in depth: Universal Multiple Angle Raman Spectroscopy

Non-invasive 3D imaging in materials and medical research involves methodologies such as X-ray imaging, MRI, fluorescence and optical coherence tomography, NIR absorption imaging, etc., providing global morphological/density/absorption changes of the hidden components. However, molecular information of such buried materials has been elusive. In this article we demonstrate observation of molecular structural information of materials hidden/buried in depth using Raman scattering. Typically, Raman spectroscopic observations are made at fixed collection angles, such as, 906, 1356, and 1806, except in spatially offset Raman scattering (SORS) (only back scattering based collection of photons) and transmission techniques. Such specific collection angles restrict the observations of Raman signals either from or near the surface of the materials. Universal Multiple Angle Raman Spectroscopy (UMARS) presented here employs the principle of (a) penetration depth of photons and then diffuse propagation through non-absorbing media by multiple scattering and (b) detection of signals from all the observable angles.

Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopy

In the present study, we report the hydrogen content estimation of the hydrogenated amorphous carbon (a-C:H) films using visible Raman spectroscopy in a fast and nondestructive way. Hydrogenated diamondlike carbon films were deposited by the plasma enhanced chemical vapor deposition, plasma beam source, and integrated distributed electron cyclotron resonance techniques. Methane and acetylene were used as source gases resulting in different hydrogen content and sp2/sp3 fraction. Ultraviolet-visible (UV-Vis) spectroscopic ellipsometry (1.5-5 eV) as well as UV-Vis spectroscopy were provided with the optical band gap (Tauc gap). The sp2/sp3 fraction and the hydrogen content were independently estimated by electron energy loss spectroscopy and elastic recoil detection analysis-Rutherford back scattering, respectively. The Raman spectra that were acquired in the visible region using the 488 nm line shows the superposition of Raman features on a photoluminescence (PL) background. The direct relationship of the sp2 content and the optical band gap has been confirmed. The difference in the PL background for samples of the same optical band gap (sp2 content) and different hydrogen content was demonstrated and an empirical relationship between the visible Raman spectra PL background slope and the corresponding hydrogen content was extracted. © 2004 American Institute of Physics.

Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.