Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

Radial and axial distributions of magnetic fields in a low-frequency (∼460 kHz)inductively coupled plasmasource with two internal crossed planar rf current sheets are reported. The internal antenna configuration comprises two orthogonal sets of eight alternately reconnected parallel and equidistant copper litz wires in quartz enclosures and generates three magnetic (H z, H r, and H φ) and two electric (E φ and E r) field components at the fundamental frequency. The measurements have been performed in rarefied and dense plasmas generated in the electrostatic(E) and electromagnetic (H)discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral (“pancake”) antennas. Relatively deeper rf power deposition in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental data.

Effect of radio frequency power and thickness on the electrochemical properties of Li2-x MnO3-y thin films

In the present work, Li2-x MnO3-y (LMO) thin films have been deposited by radio frequency (RF) reactive magnetron sputtering using acid-treated Li2MnO3 powder target. Systematic investigations have been carried out to study the effect of RF power on the physicochemical properties of LMO thin films deposited on platinized silicon substrates. X-ray diffraction, electron microscopy, surface chemical analysis and electrochemical studies were carried out for the LMO films after post deposition annealing treatment at 500 A degrees C for 1 h in air ambience. Galvanostatic charge discharge studies carried out using the LMO thin film electrodes, delivered a highest discharge capacity of 139 mu Ah mu m(-1) cm(-2) in the potential window 2.0-3.5 V vs. Li/Li+ at 100 W RF power and lowest discharge capacity of 80 mu Ah mu m(-1) cm(-2) at 75 W RF power. Thereafter, the physicochemical properties of LMO films deposited using optimized RF power 100 W on stainless steel substrates has been studied in the thickness range of 70 to 300 nm as a case study. From the galvanostatic charge discharge experiments, a stable discharge capacity of 68 mu Ah mu m(-1) cm(-2) was achieved in the potential window 2.0-4.2 V vs. Li/Li+ tested up to 30 cycles. As the thickness increased, the specific discharge capacity started reducing with higher magnitude of capacity fading.

Helicon Mode Formation and Radio Frequency Power Deposition in a Helicon Produced Plasma

Time- and space-resolved magnetic (B-dot) probe measurements in combination with measurements of the plasma parameters were carried out to investigate the relationship between the formation and propagation of helicon modes and the radio frequency (rf) power deposition in the core of a helicon plasma. The Poynting flux and the absorbed power density are deduced from the measured rf magnetic field distribution in amplitude and phase. Special attention is devoted to the helicon absorption under linear and nonlinear conditions. The present investigations are attached to recent observations in which the nonlinear nature of the helicon wave absorption has been demonstrated by showing that the strong absorption of helicon waves is correlated with parametric excitation of electrostatic fluctuations.

Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up to 25MHz. 64QAM signal with 1MHz of large signal bandw idth and 10.5dB of Peak to Average Power Ratio was gener ated, using the switching frequency of 20MHz. The obtaine defficiency was 38% including the driving circuit an d the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particular application.

Organizational, direct support, and general support maintenance repair parts and special tools lists for test set, radio frequency power AN/USM-260 (NSN 6625-00-917-3099).

"September 1976."

Organizational, direct support, and general support maintenance repair parts and special tools lists (including depot maintenance repair parts and special tools) for test set, radio frequency, power AN/URM-120 (NSN 6625-00-790-2746).

"August 1978."

Operator, organizational, DS, GS, and depot maintenance manual (including repair parts and special tool lists) : radio frequency power test set TS-2609/U.

"May 1968."

Field (fourth echelon) and depot maintenance manual : test set, radio frequency power AN/USM-161.

"11 June 1963."

Operator and organizational maintenance manual : test set, radio frequency power AN/USM-161.

"15 May 1962."

Operator's, organizational, direct support, general support, and depot maintenance manual : test set, radio frequency power AN/USM-260 (NSN 6625-00-917-3099).

"April 1967."

Operator's, organizational, direct support, and general support maintenance manual : test set, radio frequency, power AN/URM-182A (NSN 6625-01-062-3599).

"July 1978."

Radio Frequency Synthesis for Power-Constrained Systems

Thesis (Ph.D.)--University of Washington, 2015

Direct support and general support maintenance repair parts and special tools list for transmitter, radio T-1428/FRN (NSN 5895-01-099-3576), tuner, radio frequency TN-588/FRN (NSN 5895-01-107-2124), switching unit, power transfer ....

"5 July 1983."

Organizational maintenance repair parts and special tools list for transmitter, radio T-1428/FRN (NSN 5895-01-099-3576), tuner, radio frequency TN-588/FRN (NSN 5895-01-107-2124), switching unit, power transfer ....

"5 July 1983."

Optical and surface characterization of radio frequency plasma polymerized 1-isopropyl-4-methyl-1,4-cyclohexadiene thin films

Low pressure radio frequency plasma-assisted deposition of 1-isopropyl-4-methyl-1,4-cyclohexadiene thin films was investigated for different polymerization conditions. Transparent, environmentally stable and flexible, these organic films are promising candidates for organic photovoltaics (OPV) and flexible electronics applications, where they can be used as encapsulating coatings and insulating interlayers. The effect of deposition RF power on optical properties of the films was limited, with all films being optically transparent, with refractive indices in a range of 1.57–1.58 at 500 nm. The optical band gap (Eg) of ~3 eV fell into the insulating Eg region, decreasing for films fabricated at higher RF power. Independent of deposition conditions, the surfaces were smooth and defect-free, with uniformly distributed morphological features and average roughness between 0.30 nm (at 10 W) and 0.21 nm (at 75 W). Films fabricated at higher deposition power displayed enhanced resistance to delamination and wear, and improved hardness, from 0.40 GPa for 10 W to 0.58 GPa for 75 W at a load of 700 μN. From an application perspective, it is therefore possible to tune the mechanical and morphological properties of these films without compromising their optical transparency or insulating property.