997 resultados para QUANTUM PROCESSES


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With growing success in experimental implementations it is critical to identify a gold standard for quantum information processing, a single measure of distance that can be used to compare and contrast different experiments. We enumerate a set of criteria that such a distance measure must satisfy to be both experimentally and theoretically meaningful. We then assess a wide range of possible measures against these criteria, before making a recommendation as to the best measures to use in characterizing quantum information processing.

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Quantum psychopathology holds the so called “quantum mind” hypothesis, which is controversial. In addition, this hypothesis focuses attention onto quantum processes in the brain, and how this may relate to psychopathological issues. This is very “low level”. As a consequence, it is challenging to form bridges to “higher level” problems related to psychopathology. By adopting the stance used in the quantum interaction community or researchers, this reply puts forward the idea that an idealistic approach may circumvent the controversy and opens the way for addressing challenges at higher levels of psychopathology.

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Quantum ensembles form easily accessible architectures for studying various phenomena in quantum physics, quantum information science and spectroscopy. Here we review some recent protocols for measurements in quantum ensembles by utilizing ancillary systems. We also illustrate these protocols experimentally via nuclear magnetic resonance techniques. In particular, we shall review noninvasive measurements, extracting expectation values of various operators, characterizations of quantum states and quantum processes, and finally quantum noise engineering.

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We present a model for detection of the states of a coupled quantum dots (qubit) by a quantum point contact. Most proposals for measurements of states of quantum systems are idealized. However in a real laboratory the measurements cannot be perfect due to practical devices and circuits. The models using ideal devices are not sufficient for describing the detection information of the states of the quantum systems. Our model therefore includes the extension to a non-ideal measurement device case using an equivalent circuit. We derive a quantum trajectory that describes the stochastic evolution of the state of the system of the qubit and the measuring device. We calculate the noise power spectrum of tunnelling events in an ideal and a non-ideal quantum point contact measurement respectively. We found that, for the strong coupling case it is difficult to obtain information of the quantum processes in the qubit by measurements using a non-ideal quantum point contact. The noise spectra can also be used to estimate the limits of applicability of the ideal model.

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We show that divisibility of qubit quantum processes implies temporal Tsirelson's bound. We also prove that the classical bound of the temporal Bell's inequality holds for dynamics that can be described by entanglement-breaking channels---a more general class of dynamics than that allowed by classical physics.

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A non-Markovian process is one that retains `memory' of its past. A systematic understanding of these processes is necessary to fully describe and harness a vast range of complex phenomena; however, no such general characterisation currently exists. This long-standing problem has hindered advances in understanding physical, chemical and biological processes, where often dubious theoretical assumptions are made to render a dynamical description tractable. Moreover, the methods currently available to treat non-Markovian quantum dynamics are plagued with unphysical results, like non-positive dynamics. Here we develop an operational framework to characterise arbitrary non-Markovian quantum processes. We demonstrate the universality of our framework and how the characterisation can be rendered efficient, before formulating a necessary and sufficient condition for quantum Markov processes. Finally, we stress how our framework enables the actual systematic analysis of non-Markovian processes, the understanding of their typicality, and the development of new master equations for the effective description of memory-bearing open-system evolution.

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We test current numerical implementations of laser-matter interactions by comparison with exact analytical results. Focusing on photon emission processes, it is found that the numerics accurately reproduce analytical emission spectra in all considered regimes, except for the harmonic structures often singled out as the most significant high-intensity (multiphoton) effects. We find that this discrepancy originates in the use of the locally constant field approximation.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Several schemes for coherent quantum control of atomic and molecular processes have been proposed and investigated by using the techniques of adiabatic passage and ultrashort pulses, respectively. Some interesting results have been found.

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We present a quantum algorithm to simulate general finite dimensional Lindblad master equations without the requirement of engineering the system-environment interactions. The proposed method is able to simulate both Markovian and non-Markovian quantum dynamics. It consists in the quantum computation of the dissipative corrections to the unitary evolution of the system of interest, via the reconstruction of the response functions associated with the Lindblad operators. Our approach is equally applicable to dynamics generated by effectively non-Hermitian Hamiltonians. We confirm the quality of our method providing specific error bounds that quantify its accuracy.

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A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

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The authors report a simple but effective way to improve the surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot (QD) active regions grown by metal-organic chemical vapor deposition (MOCVD), in which GaAs middle spacer and top separate confining heterostructure (SCH) layers are deposited at a low temperature of 560 degrees C to suppress postgrowth annealing effect that can blueshift emission wavelength of QDs. By introducing annealing processes just after depositing the GaAs spacer layers, the authors demonstrate that the surface morphology of the top GaAs SCH layer can be dramatically improved. For a model structure of five-layer QDs, the surface roughness with the introduced annealing processes (IAPs) is reduced to about 1.3 nm (5x5 mu m(2) area), much less than 4.2 nm without the IAPs. Furthermore, photoluminescence measurements show that inserting the annealing steps does not induce any changes in emission wavelength. This dramatic improvement in surface morphology results from the improved GaAs spacer surfaces due to the IAPs. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers based on MOCVD.

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We have measured the power dependence of the photoluminesence spectra from a set of strained InxGa1-xAs/GaAs single quantum wells. The result shows that the excitation power has important effect on the carrier recombination processes. When the power increases from 0.5 to 14 mW, the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases. At high excitation level, the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level, while it only doubles for the well.