New approach to controllable nitrogen doping for improved nano-semiconductors

The data covers the following:
X-ray photoelectron spectroscopy (XPS) - to collect surface chemical structure changes (using RMIT instrument);
Scanning electron microscopy (SEM) - to collect surface physical structure changes;
Atomic force microscopy (AFM) - to collect surface morphology changes;
Internal/External quantum efficiency (IQE/EQE) – to collect DSSC (Dye Sensitised Solar Cells) efficiency data;
Discharge/Charge capacity - to collect battery efficiency data.

Supplementing cold plasma with heat enables doping and nano-structuring of metal oxides

Nitrogen doped SnO2 polycrystalline nanostructures were produced from commercial SnO powders in a new system that combines a low-temperature plasma with heating. The method has the potential to improve the initial efficiency and the cycling performance of SnO2 anodes in Li-ion batteries. With this system, the temperature of the SnO to SnO2 conversion was lowered from 430 to 320 °C, up to 5 at% of doped nitrogen was detected and a nano-scale polycrystalline structure was observed in the product. Combining heat and low-pressure plasma is a promising approach for the production and treatment of enhanced energy storage materials.

H2 purification by functionalized graphdiyne – role of nitrogen doping

A nitrogen modified graphdiyne is investigated concerning its performance for hydrogen purification from CH4 and CO by density functional theory with dispersion correction and transition state theory. After nitrogen doping, the porous N-graphdiyne nano-mesh shows a reduced H2 diffusion barrier and increased CH4/CO diffusion barriers, hence leading to an enhanced hydrogen purification capability.

Hexamethylenetetramine mediated simultaneous nitrogen doping and reduction of graphene oxide for a metal-free SERS substrate

We report a one-pot hydrothermal synthesis of nitrogen doped reduced graphene oxide (N-rGO) and Ag nanoparticle decorated N-rGO hybrid nanostructures from graphene oxide (GO), metal ions and hexamethylenetetramine (HMT). HMT not only reduces GO and metal ions simultaneously but also acts as the source for the nitrogen (N) dopant. We show that the N-rGO can be used as a metal-free surface enhanced Raman spectroscopy (SERS) substrate, while the Ag nano-particles decorated N-rGO can be used as an effective SERS substrate as well as a template for decorating various other nanostructures on N-rGO.

Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires

Nitrogen-doped beta-Ga2O3 nanowires (GaO NWs) were prepared by annealing the as-grown nanowires in an ammonia atmosphere. The optical properties of the nitrogen-doped GaO NWs were studied by measurements of the photoluminescence and phosphorescence decay at the temperature range between 10 and 300 K. The experimental results revealed that nitrogen doping in GaO NWs induced a novel intensive red-light emission around 1.67 eV, with a characteristic decay time around 136 mus at 77 K, much shorter than that of the blue emission (a decay time of 457 mus). The time decay and temperature-dependent luminescence spectra were calculated theoretically based on a donor-acceptor pair model, which is in excellent agreement with the experimental data. This result suggests that the observed novel red-light emission originates from the recombination of an electron trapped on a donor due to oxygen vacancies and a hole trapped on an acceptor due to nitrogen doping.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires

We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium oxide nanowires in flowing ammonia at high temperature. Microstructure analysis indicates that the GaMnN nanowires have wurtzite GaN structure without Mn precipitates or Mn-related second phases. Magnetism evolution due to nitrogen doping in manganese-gallium oxide nanowires was evaluated by magnetic measurements. Magnetic measurement reveals that the magnetization increases with the increase of nitrogen concentration. Ferromagnetic ordering exists in the GaMnN nanowires, whose Curie temperature is above room temperature. Luminescence evolution was investigated by the cathodoluminesence measurement for a single nanowire and photoluminescence measurement in a temperature range between 10 and 300 K. Experimental results indicate that optical properties can be modulated by nitrogen doping in manganese-gallium oxide nanowires. (c) 2005 Elsevier B.V. All rights reserved.

IxV Curves of Boron and Nitrogen Doping Zigzag Graphene Nanoribbons

We investigate the transport properties (IxV curves and zero bias transmittance) of pristine graphene nanoribbons (GNRs) as well as doped with boron and nitrogen using an approach that combines nonequilibrium Green`s functions and density functional theory (DFT) [NEGF-DFT]. Even for a pristine nanoribbon we verify a spin-filter effect under finite bias voltage when the leads have an antiparallel magnetization. The presence of the impurities at the edges of monohydrogenated zigzag GNRs changes dramatically the charge transport properties inducing a spin-polarized conductance. The IxV curves for these systems show that depending on the bias voltage the spin polarization can be inverted. (C) 2010 Wiley Periodicals, Inc. Int J Quantum Chem 111: 1379-1386, 2011

In-situ and tunable nitrogen-doping of MoS2 nanosheets.

Molybdenum disulfide (MoS2) nanosheets have unique physical and chemical properties, which make it a perfect candidate for next generation electronic and energy storage applications. Herein, we show the successful synthesis of nitrogen-doped MoS2 nanosheets by a simple, effective and large-scale approach. MoS2 nanosheets synthesised by this method show a porous structure formed by curled and overlapped nanosheets with well-defined edges. Analysis of the nanosheets shows that they have an enlarged interlayer distance and high specific surface area. X-ray photoelectron spectroscopy analysis shows the nanosheets have Mo-N bond indicating successful nitrogen doping. The nitrogen content of the product can be modulated by adjusting the ratio of starting materials easily within the range from ca. 5.8 to 7.6 at%.

Nitrogen-Doping in ZnO via Combustion Synthesis?

We report the synthesis and characterization of colored ZnO-based powders via solution combustion reaction of urea and zinc nitrate hexahydrate in varying molar ratios between 1:1 and 10:1. Among other techniques, we employ X-ray diffraction, nuclear magnetic resonance, and Raman spectroscopy to characterize the products. Within a narrow range of reactant ratios, we reproducibly find an unidentified, crystalline precursor phase related to isocyanuric acid next to ZnO. Finally, we complement our investigations by performing Prompt Gamma Activation Analysis (PGAA) on selected products in order to directly determine elemental bulk compositions and compare these with X-ray photoelectron spectroscopy (XPS) measurements. Our data show traces of nitrogen mainly on the surface of the particles, and thus we question the solution combustion method as a reliable synthesis toward N-doped ZnO. Furthermore, we exclude nitrogen as being responsible for the appearance of the four controversially discussed Raman bands superimposed onto the spectrum of pure ZnO (at 275, 510, 582, and 643 cm–1) and show that the combination of PGAA and XPS is an excellent and complementary method to obtain information about the distribution of the elements in question.