Infrared studies of the monoclinic-tetragonal phase transition in Pb(Zr, Ti)O-3 ceramics

Recently, the observation of a new monoclinic phase in the PbZr1-xTixO3 (PZT) system in the vicinity of the morphotropic phase boundary was reported. Investigations of this new phase were reported using different techniques such as high-resolution synchrotron x-ray powder diffraction and Raman spectroscopy. In this work, the monoclinic --> tetragonal phase transition in PbZr0.50Ti0.50O3 ceramics was studied using infrared spectroscopy between 1000 and 400 cm(-1). The four possible nu(1)-stretching modes (Ti-O and Zr-O stretch) in the BO6 octahedron in the ABO(3) structure of PZT in this region were monitored as a function of temperature. The lower-frequency mode nu(1)-(Zr-O) remains practically unaltered, while both intermediate nu(1)-(Ti-O) modes decrease linearly as temperature increases from 89 to 263 K. In contrast, the higher-frequency nu(1)-(Ti-O) and nu(1)-(Zr-O) modes present anomalous behaviour around 178 K. The singularity observed at this mode was associated with the monoclinic --> tetragonal phase transition in PbZr0.50Ti0.50O3 ceramics.

Phase transition and dielectric properties of La-doped Pb(Zr, Ti)O-3 antiferroelectric ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improvement of the dielectric and ferroelectric properties in superlattice structure of Pb(Zr,Ti)O-3 thin films grown by a chemical solution route

Making heterolayered perovskite materials constitutes an approach for the creation of better dielectric and ferroelectric properties. In the experiment reported here, heterolayered PZT40/PZT60 films were grown on Pt/Ti/SiO2/Si (100) by a chemical solution deposition. The dielectric constant of the heterolayered thin film was significantly enhanced compared with that of pure PZT40 and PZT60 thin films. A dielectric constant of 701 at 100 kHz was observed for a stacking periodicity of six layers having a total thickness of 150 nm. The heterolayered film exhibited greater remanent polarization than PZT60 and PZT40 films. The values of remanent polarization were 7.9, 18.5, and 31 muC/cm(2), respectively, for pure PZT60, PZT40, and heterolayered thin films, suggesting that the superior dielectric and ferroelectric properties of the heterolayered thin film resulted from a cooperative interaction between the ferroelectric phases made from alternating tetragonal and rhombohedral phases of PZT, simulating the morphotropic phase boundary of this system. (C) 2004 American Institute of Physics.

Preparation of Pb(Zr,Ti)O-3 thin films by soft chemical route

Lead zirconate titanate, Pb(Zr0.3Ti0.7)O-3 (PZT) thin films were prepared with success by the polymeric precursor method. Differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FT-IR), Micro-Raman spectroscopy and X-ray diffraction (XRD) were used to investigate the formation of the PZT perovskite phase. X-ray diffraction revealed that the film showed good crystallinity and no presence of secondary phases was identified. This indicates that the PZT thin films were crystallized in a single phase. PZT thin films showed a well-developed dense grain structure with uniform distribution, without the presence of rosette structure. The Raman spectra undoubtedly revealed these thin films in the tetragonal phase. For the thin films annealed at the 500-700 degreesC range, the vibration modes of the oxygen sublattice of the PZT perovskite phase were confirmed by FT-IR. The room temperature dielectric constant and dielectric loss of the PZT films, measured at 1 kHz were 646 and 0.090, respectively, for thin film with 365 nm thickness annealed at 700 degreesC for 2 h. A typical P-E hysteresis loop was observed and the measured values of P-s, P-r and E-c were 68 muC/cm(2), 44 muC/cm(2) and 123 kV/cm, respectively. The leakage current density was about 4.8 x 10(-7) A/cm(2) at 1.5 V. (C) 2003 Elsevier Ltd. All rights reserved.

Oriented ferroelectric thin films of PbTiO3, (Pb,La)TiO3, and Pb(Zr,Ti)O3 by nebulized spray pyrolysis

Nebulized spray pyrolysis provides a good low?temperature chemical route for preparing thin films of PbTiO3, (Pb0.9,La0.1)TiO3 and Pb(Zr0.52,Ti0.48)O3. The films are a? or c? axis oriented, with spherical grains of ?30 nm and give satisfactory P?E hysteresis loops. © 1995 American Institute of Physics.

Switching ferroelectric domain configurations using both electric and magnetic fields in Pb(Zr,Ti)O3–Pb(Fe,Ta)O3 single-crystal lamellae

Thin single-crystal lamellae cut from Pb(Zr,Ti)O3–Pb(Fe,Ta)O3 ceramic samples have been integrated into simple coplanar capacitor devices. The influence of applied electric and magnetic fields on ferroelectric domain configurations has been mapped, using piezoresponse force microscopy. The extent to which magnetic fields alter the ferroelectric domains was found to be strongly history dependent: after switching had been induced by applying electric fields, the susceptibility of the domains to change under a magnetic field (the effective magnetoelectric coupling parameter) was large. Such large, magnetic field-induced changes resulted in a remanent domain state very similar to the remanent state induced by an electric field. Subsequent magnetic field reversal induced more modest ferroelectric switching.

The Nature of Magnetoelectric Coupling in Pb(Zr,Ti)O3-Pb(Fe,Ta)O3

The coupling between magnetization and polarization in a room temperature multiferroic (Pb(Zr,Ti)O3–Pb(Fe,Ta)O3) is explored by monitoring changes in capacitance that occur when a magnetic field is applied in each of three orthogonal directions. Magnetocapacitance effects, consistent with P2M2 coupling, are strongest when fields are applied in the plane of the single crystal sheet investigated.

Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O-3 thin films

Ba(Zr0.50Ti0.50)O-3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 degrees C for 8, 16, 24, 48, 96 and 192 It in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1 0 0), (1 1 0) and (2 0 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756 cm(-1). The atomic force microscopy analysis presented the growth of granules in the Ba(Zr0.50Ti0.50)O-3 films annealed from 8 to 96 h. The crystalline film annealed for 192 h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time. (C) 2006 Elsevier B.V. All rights reserved.

Study of structural evolution and photoluminescent properties at room temperature of Ca(Zr, Ti)O-3 powders

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Measurement of Residual Stresses in Ferroelectric Pb(Zr

The residual stresses in Pb(Zr0.3Ti0.7)O3thin films were measured by the \sin^{2}\Psi method using the normal X-ray incidence. The spacing of different planes (hkl) parallel to the film surface were converted to the spacing of a set of inclined planes (100). The angles between (100) and (hkl) were equivalent to the tilting angles of (100) from the normal of film surface. The residual stresses were extracted from the linear slope of the strain difference between the equivalent inclined direction and normal direction with respect to the \sin^{2}\Psi. The results were in consistency with that derived from the conventional \sin^{2}\Psi method.

Giant energy density in [001]-textured Pb(Mg1/3Nb2/3)O-3-PbZrO3-PbTiO3 piezoelectric ceramics

Pb(Zr,Ti)O-3 (PZT) based compositions have been challenging to texture or grow in a single crystal form due to the incongruent melting point of ZrO2. Here we demonstrate the method for achieving 90% textured PZT-based ceramics and further show that it can provide highest known energy density in piezoelectric materials through enhancement of piezoelectric charge and voltage coefficients (d and g). Our method provides more than similar to 5x increase in the ratio d(textured)/d(random). A giant magnitude of d.g coefficient with value of 59 000 x 10(-15) m(2) N-1 (comparable to that of the single crystal counterpart and 359% higher than that of the best commercial compositions) was obtained. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789854]

LnMsbO_6和Ln_2M_2O_7 (M = Zr, Ti)复合氧化物的合成、组成、结构及发光等性质的研究

在综合文献报导的基础上，我们选择了LnMsbO_6和Ln_2M_2O_7 (M = Zr, Ti)做为研究体系，对其合成、组成、结构以及稀土离子在其中的发光性质进行了较为系统的研究。用氢氧化物共沉淀的方法，在等摩尔阳离子原料配比条件下，我们制备了LnMsbO_6和Ln_2M_2O_7(M = Zr, Ti, Ln = La - Yb, Y除Ce和Pm)。根据对组成的分析结果并与文献对比，我们认为得到的化合物组成与给出的分子式是一致的。由热分析并结合x-ray衍射分析对LnZrsbO_6的形成反应进行了研究，其结果表明化合物的形成过程是一个较慢的固相反应过程。通过x-ray粉沫衍射物相分析并结合掺杂Eu~(3+)的发光光谱，我们确定了在不同条件下合成的LnMsbO_6和Ln_2M_2O_7化合物的结构类型，并计算了所有化合物的晶胞参数。在对上述结构特性及其变化规律进行研究后，我们认为Ln_2M_2O_7结构变化规律与ΔZ/(d~2) (Z为阳离子电荷，d为阳离子与阴离距离)有关，随ΔZ/(d~2)值由小到大，Ln_2M_2O_7(M = Zr, Ti)先是形成具有荧石结构的阳离子无序固溶体，然后逐渐过渡到荧石结构的变型——有序的立方烧绿石结构，最后变型到单斜晶系结构。LnMsbO_6(M = Zr, Ti)低温相结构与Ln_2M_2O_7(M = Zr, Ti)是有联系的，即基本保持了其立方晶系结构。然后锑的加入使这种结构变得很不稳定，因此在高温灼烧下上述立方相将不可逆地变为更稳定的高温结构相。利用磁天平对LnMsbO_6和Ln_2M_2O_7进行了室温条件下的磁学性质测量，其玻尔磁子数的实验值与Van Vleck理论值符合较好。由此也可说以说明化合物的组成与给出的分子式是一致的。用荧光光谱仪对Eu~(3+)在不同基质中做发光光谱，其结果表明Eu~(3+)在烧绿石结构的Ln_2M_2O_7中，Ln~(3+)是处于具有反演中心的D_(3d)格位，这时~5D_0 → ~7F_2的电体极跃迁（～610nm）是被禁阻的，因此Eu~(3+)主要的发光为~5D_0 → ~7F_1磁体极跃迁（～590nm），并劈裂为两条谱线。在其它不具有反演中心的格位中Eu~(3+)的~5D_0 → ~7F_2跃迁则是较强的。在La~(3+)有着多个较低对称性格位的La_2Ti_2O_7:Eu中，无论是Eu~(3+)的激发光谱，还是发射光谱，其~5D_0与~7F_0之间的跃迁谱线都不只一条，这与La~(3+)多对称性格位特性是一致的。在立方荧石结构的LnZrsbO_6:Eu中，用Eu~(3+)电荷迁移带激发的发光光谱与用其它激发带激发的很不相同，其~5D_1能级的跃迁谱线非常强，我们认为这可能是由于电荷迁移激发态，将大部分能量传递给3~5D_1能级的结果。另外，我们比较了在Ln_2Zr_2O_7和LnZrsbO_6中Eu~(3+)的发光强度，发现前者要比后者强许多。在研究Bi~(3+)对Eu~(3+)的敏化作用时，我们发现在Y_2M_2O_7:Bi, Bu中Bi~(3+)对Eu~(3+)有较好的敏化作用，而在YMsbO_6:Bi, Eu中则没有。同时我们注意到对于Eu~(3+)取代六配位La~(3+)格位时，其电荷还移带位置和符合Hoefdraad认为是不变的规律，而是随着基质晶格的不同发生变化的。对Dy~(3+)在LnMsbO_6和Ln_2M_2O_7基质中发光性质研究中，我们看到Dy~(3+)的发光主要为兰色的~4F_(9/2) → ~6H_(15/2)跃迁(～480nm)和黄色的~4F_(9/2) → ~6H_(13/2)跃迁(～580nm)。其黄光与兰光的强度比值（R）随基质晶格的不同可以有很大的变化。一般情况下R值总是要大小1，且不随湿度和Dy~(3+)掺杂浓度变化。同时我们比较了在Ln_2Zr_2O_7和LnZrsbO_6 (Ln = Y, Gd, La)基质体系中Dy~(3+)的发光强度，发现同Eu~(3+)类似前者较后者强许多。在论文中我们给出了在Y_2M_2O_7和YMsbO_6 (M = Zr, Ti)中Sm~(3+)的激发光谱与发射光谱，从中可以看到当Sm~(3+)在Y_2Ti_2O_7中取代占据D_(3d)格位的Y~(3+)时，其~4G_(5/2) → ~6H_(9/2) (～650nm)电体极跃迁是被禁阻的。同时还给出了在YZrsbO_6中H_0~(3+)和Er~(3+)的激发光谱与发射光谱。此外，我们研究了Eu~(3+)和Dy~(3+)在一些基质体系中发光强度随温度的变化规律。发现Y_2Zr_2O_7:Eu的临界猝来温度要比La_2Zr_2O_7:Eu的高，Ln_2Zr_2O_7:Dy (Ln = La, Y)的温度猝来曲线则大致相同，且随温度和猝来要比Ln_2Zr_2O_7:Eu缓慢，对于上述现象我们利用位形坐标给出了一定的解释。然而所有的样品发光强度从室温开始，随温度的升高都是单调下降的。

Impedance-fatigue correlated studies on SrBi2Ta2O9

Ceramic samples of SrBi2Ta2O9 (SBT) were prepared by the solid state reaction method with a view to study their electrical properties. Reasons as to why SBT shows better fatigue endurance than conventional perovskites like Pb(Zr, Ti)O-3 are looked into. Complex impedance spectroscopy (CIS) was used as a tool to do so. CIS data was acquired over the temperature range from room temperature to 500 degrees C over a wide range of frequencies. Electrical conductivity data indicates that the conductivity in SBT is essentially due to oxygen vacancies and the activation energy for conduction in the high temperature region was found to be 0.95 eV. CIS was used to separate out the bulk and the interfacial contributions to complex impedance.