Flux-Line-Lattice Melting and Upper Critical Field of Bi1.65Pb0.35Sr2Ca2Cu3O10+delta Ceramic Samples

We have conducted magnetoresistance measurements rho(T,H) in applied magnetic fields up to 18 T in Bi1.65Pb0.35Sr2Ca2Cu3O10+delta ceramic samples which were subjected to different uniaxial compacting pressures. The anisotropic upper critical fields H (c2)(T) were extracted from the rho(T,H) data, yielding and the out-of-plane superconducting coherence length xi (c) (0)similar to 3 . We have also estimated and xi (ab) (0) similar to 90 . In addition to this, a flux-line-lattice (FLL) melting temperature T (m) has been identified as a second peak in the derivative of the magnetoresistance d rho/dT data close to the superconducting transition temperature. An H (m) vs. T phase diagram was constructed and the FLL boundary lines were found to obey a temperature dependence H (m) ae(T (c) /T-1) (alpha) , where alpha similar to 2 for the sample subjected to the higher compacting pressure. A reasonable value of the Lindemann parameter c (L) similar to 0.29 has been found for all samples studied.

Consolidation of Bi-2223 superconducting powders by spark plasma sintering

The spark plasma sintering (SPS) technique, by using a compacting pressure of 50 MPa, was used to consolidate pre-reacted powders of Bi1.65Pb0.35Sr2Ca2Cu3O10+delta (Bi-2223). The influence of the consolidation temperature, T-D, on the structural and electrical properties has been investigated and compared with those of a reference sample synthesized by the traditional solid-state reaction method and subjected to the same compacting pressure. From the X-ray diffraction patterns, performed in both powder and pellet samples, we have found that the dominant phase is the Bi-2223 in all samples but traces of the Bi2Sr2CaCu2O8+x (Bi-2212) were identified. Their relative density were similar to 85% of the theoretical density and the temperature dependence of the electrical resistivity, rho(T), indicated that increasing T-D results in samples with low oxygen content because the SPS is performed in vacuum. Features of the rho(T) data, as the occurrence of normal-state semiconductor-like behavior of rho(T) and the double resistive superconducting transition, are consistent with samples comprised of grains with shell-core morphology in which the shell is oxygen deficient. The SPS samples also exhibited superconducting critical current density at 77 K, J(c)(77K), between 2 and 10A/cm(2), values much smaller than similar to 22A/cm(2) measured in the reference sample. Reoxygenation of the SPS samples, post-annealed in air at different temperatures and times, was found to improve their microstructural and transport properties. Besides the suppression of the Bragg peaks belonging to the Bi-2212 phase, the superconducting properties of the post-annealed samples and particularly J(c)(77K) were comparable or better than those corresponding to the reference sample. Post-annealed samples at 750 degrees C for 5min exhibited J(c)(77K) similar to 130A/cm(2) even when uniaxially pressed at only 50 MPa. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768257]

Influência de protocolos de jateamento na rugosidade da superfície de uma cerâmica de zircônia tetragonal parcialmente estabilizada por ítria

Objective: To evaluate the influence of different air abrasion protocols on the surface roughness of an yttria-stabilized polycrystalline tetragonal zirconia) (Y-TZP) ceramic, as well as the surface topography of the ceramic after the treatment. Method: Fifty-four specimens (7.5×4×7.5mm) obtained from two ceramic blocks (LAVA, 3M ESPE) were flattened with fine-grit sandpaper and subjected to sintering in the ceramic system's specific firing oven. Next, the specimens were embedded in acrylic resin and the surfaces to be treated were polished in a polishing machine using sandpapers of decreasing abrasion (600- to 1,200-grit) followed by felt discs with 10μm and 3μm polishing pastes and colloidal silica. The specimens were then randomly assigned to 9 groups, according to factors particle and pressure(n=6): Gr1- control; Gr2- Al 2O 3(50μm)/2.5 bar; Gr3- Al 2O 3(110μm)/2.5 bar; Gr4- SiO 2(30μm)/2.5 bar; Gr5- SiO 2(30μm)/2.5 bar; Gr6- Al 2O 3(50μm)/3.5 bar; Gr7- Al2O3(110μm)/3.5 bar; Gr8- SiO 2(30μm)/3.5 bar; Gr9- SiO 2(30μm)/3.5 bar. After treatments, surface roughness was analyzed by a digital optical profilometer and the morphology was examined by scanning electron microscopy (SEM). Data (μm) were subjected to statistical analysis by Dunnett's test (5%), two-way ANOVA and Tukey's test (5%). Results: The type of particle (p=0.0001) and the pressure (p=0.0001) used in the air abrasion protocols influenced the surface roughness values among the experimental groups (ANOVA). The mean surface roughness values (μm) obtained for the experimental groups (Gr2 to Gr9) were, respectively: 0.37 D; 0.56 BC; 0.46 BC; 0.48 CD; 0.59 BC; 0.82 A; 0.53B CD; 0.67 AB. The SEM analysis revealed that Al 2O 3, regardless of the particle size and pressure used, caused damage to the surface of the specimens, as it produced superficial damages on the ceramic, in the form of grooves and cracks. Conclusion: Al2O3 (110 μm/3.5 bar) air abrasion promoted the highest surface roughness on the ceramics, but it does not mean that this protocol promotes better ceramic-cement union compared to the other air abrasion protocols.

Size effects on tensile and fatigue behaviour of polycrystalline metal foils at the micrometer scale

Tensile and fatigue properties of as-rolled and annealed polycrystalline Cu foils with different thicknesses at the micrometer scale were investigated. Uniaxial tensile testing results showed that with decreasing foil thickness the uniform elongation decreases for both as-rolled and annealed foils, whereas the yield strength and ultimate tensile strength increase for as-rolled foils, but decrease for the annealed foils. For both the as-rolled or annealed foils, bending fatigue resistance decreases with decreasing the foil thickness. Deformation and fatigue damage behaviour of the free-standing foils were characterised as a function of foil thickness. In addition, the fatigue strength of various small-scale Cu foils was compared to understand they physical mechanisms of size effects on mechanical properties of the metallic material at micrometer scales.

Effects of substrate temperature on the microstructure of YBa2Cu3O7-δ films grown on (001) Y-ZrO2 substrates

High-quality YBa2Cu3O7-δ films grown on (001) single-crystal Y-ZrO2 substrates by pulsed laser deposition have been studied as a function of substrate temperature using transmission electron microscopy. A transition from epitaxial films to c-axis oriented polycrystalline films was observed at 740°C. An intermediate, polycrystalline, BaZrO3 layer was formed from a reaction between the film and the substrate. A dominant orientation relationship of [001] YBCO//[001]int. layer//[001]YSZ and [110] YBCO//[110]int. layer//[100]YSZ was observed. The formation of grain boundaries in the films resulted in an increased microwave surface resistance and a decreased critical-current density. The superconducting transition temperature remained fairly constant at about 90 K.

Aluminum-assisted crystallization and p-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH 4+Ar+H2 gas mixture at a low substrate temperature of 300∈°C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si-Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×1018 cm-3. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300∈°C is proposed.

Thermal properties and thermal shock resistance of γ-Y 2Si2O7

Thermal properties, namely, Debye temperature, thermal expansion coefficient, heat capacity, and thermal conductivity of γ-Y 2Si2O7, a high-temperature polymorph of yttrium disilicate, were investigated. The anisotropic thermal expansions of γ-Y2Si2O7 powders were examined using high-temperature X-ray diffractometer from 300 to 1373 K and the volumetric thermal expansion coefficient is (6.68±0.35) × 10-6 K-1. The linear thermal expansion coefficient of polycrystalline γ-Y2Si2O7 determined by push-rod dilatometer is (3.90±0.4) × 10-6 K-1, being very close to that of silicon nitride and silicon carbide. Besides, γ-Y2Si2O7 displays a low-thermal conductivity, with a κ value measured below 3.0 W·(m·K) -1 at the temperatures above 600 K. The calculated minimum thermal conductivity, κmin, was 1.35 W·(m·K) -1. The unique combination of low thermal expansion coefficient and low-thermal conductivity of γ-Y2Si2O7 renders it a very competitive candidate material for high temperature structural components and environmental/thermal-barrier coatings. The thermal shock resistance of γ-Y2Si2O7 was estimated by quenching dense materials in water from various temperatures and the critical temperature difference, ΔTc, was determined to be 300 K.

Bundles of polytwins as meta-elastic domains in the thin polycrystalline simple multi-ferroic system PZT.

We used enhanced piezo-response force microscopy (E-PFM) to investigate both ferroelastic and ferroelectric nanodomains in thin films of the simple multi-ferroic system PbZr(0.3)Ti(0.7)O(3) (PZT). We show how the grains are organized into a new type of elastic domain bundles of the well-known periodic elastic twins. Here we present these bundle domains and discuss their stability and origin. Moreover, we show that they can arrange in such a way as to release strain in a more effective way than simple twinning. Finally, we show that these bundle domains can arrange to form the macroscopic ferroelectric domains that constitute the basis of ferroelectric-based memory devices.

Nucleation, growth, and control of ferroelectric-ferroelastic domains in thin polycrystalline films

The unique response of ferroic materials to external excitations facilitates them for diverse technologies, such as nonvolatile memory devices. The primary driving force behind this response is encoded in domain switching. In bulk ferroics, domains switch in a two-step process: nucleation and growth. For ferroelectrics, this can be explained by the Kolmogorov-Avrami-Ishibashi (KAI) model. Nevertheless, it is unclear whether domains remain correlated in finite geometries, as required by the KAI model. Moreover, although ferroelastic domains exist in many ferroelectrics, experimental limitations have hindered the study of their switching mechanisms. This uncertainty limits our understanding of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from reaching their full technological potential. Here we used piezoresponse force microscopy to study the switching mechanisms of ferroelectric-ferroelastic domains in thin polycrystalline Pb 0.7Zr0.3TiO3 films at the nanometer scale. We have found that switched biferroic domains can nucleate at multiple sites with a coherence length that may span several grains, and that nucleators merge to form mesoscale domains, in a manner consistent with that expected from the KAI model. © 2012 American Physical Society.