Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.

Physical modelling of large area 4H-SiC PiN diodes

The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE.

Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.

A reconfiguration dual-frequency slot-loaded microstrip antenna controlled by pin diodes

A novel reconfigurable, single feed, dual frequency, dualpolarized operation of a hexagonal slot-loaded square mwrostrip antenna is presented in this paper. A pin diode incorporated in the slot is used to switch the two operating frequencies considerably, without significantly affecting the radiation characteristics and gain. The proposed antenna provides a size reduction up to 61% and 26% Jor the two resonating frequencies, compared to standard rectangular patches. This design also gives considerable bandwidth up to 3.3% and 4.27%, for the two frequencies with a low operating frequency ratio

Investigations on Reconfigurable Dual Frequency Microstrip Antennas Controlled by PIN Diodes and Varactors

In this work,we investigate novel designs of compact electronically reconfigurable dual frequency microstrip antennas with a single feed,operating mainly in L-band,without using any matching networks and complicated biasing circuitry.These antennas have been designed to operate in very popular frequency range where a great number of wireless communication applications exist.Efforts were carried out to introduce a successful,low cost reconfigurable dual-frequency microstrip antenna design to the wireless and radio frequency design community.

Local lifetime engineering in 600V pin diode using mix-mode simulation

This paper reports a detailed analysis of the effect of local lifetime killing (LLK) within the drift region on the reverse recovery (RR) characteristics and on-state performance of 600V Silicon PiN diodes. The paper also discusses the influence of the measurement circuit on the reverse recovery of the high voltage diodes and it proposes a simple and effective mix-mode simulation tool for an accurate assessment of the diode performance in reverse recovery mode. © 2013 IEEE.

Switchable-feed reconfigurable ultra-wide band planar antenna

Reconfigurable antennas capable of radiating in only specific desired directions increase system functionality in applications like direction finding and beam steering. This paper presents the design simulation, fabrication and measurement of a horizontally polarized, direction reconfigurable Vivaldi antenna, designed for the lower-band UWB (2-6 GHz). This design employs eight circularly distributed independent Vivaldi antennas with a common port, electronically controlled by PIN diodes acting as RF switches. Experimental results show that the reconfigurable antenna has a bandwidth of 4 GHz (2-6 GHz), with 5 dB gain in the desired direction and capable of steering over the 360° range.

Electronically-reconfigurable horizontally polarized wide-band planar antenna

Antennas are a necessary and critical component of communications and radar systems, but their inability to adjust to new operating scenarios can sometimes limit the system performance. Reconfigurable antennas capable of radiating in only specific desired directions can ameliorate these restrictions and help to achieve increased functionality in applications like direction finding and beam steering. This paper presents the design simulation, fabrication and measurement of a wide-band, horizontally polarized, direction reconfigurable microstrip antenna operating at 2.45 GHz. The design employs a central horizontally polarized omnidirectional active element surrounded by electronically reconfigurable parasitic microstrip elements, controlled by PIN diodes acting as RF switches. Experimental results show that the reconfigurable antenna has a bandwidth of 40% (2-3 GHz), with 3 dB gain in the desired direction and capable of steering over the 360° range.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures

Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.

Voltage Controlled Intertwined Spiral Arrays for Reconfigurable Metasurfaces

Reconfigurable bistate metasurfaces composed of interwoven spiral arrays with embedded pin diodes are proposed for single and dual polarisation operation. The switching capability is enabled by pin diodes that change the array response between transmission and reflection modes at the specified frequencies. The spiral conductors forming the metasurface also supply the dc bias for controlling pin diodes, thus avoiding the need of additional bias circuitry that can cause parasitic interference and affect the metasurface response. The simulation results show that proposed active metasurfaces exhibit good isolation between transmission and reflection states, while retaining excellent angular and polarisation stability with the large fractional bandwidth (FBW) inherent to the original passive arrays. © 2014 A. Vallecchi et al.

Reconfigurable frequency selective surfaces with interleaved spiral slots

A new type of active frequency selective surface (AFSS) is proposed to realise a voltage controlled bi-state (transparent and reflecting) response at the specified frequencies. The bi-state switching is achieved by combining a passive array of interleaved spiral slots in conducting screens and active dipole arrays with integrated pin diodes at the opposite sides of a thin dielectric substrate. Simulation results show that such active surfaces have high isolation between the transparency and reflection states, while retaining the merits of substantially sub-wavelength response of the unit cell and large fractional bandwidths (FBWs) inherent to the original passive interwoven spiral arrays. Potential applications include reconfigurable and controllable electromagnetic architecture of buildings.

Active singly and dual polarised interwoven spiral frequency selective surfaces

Reconfigurable bi-state interwoven spiral FSSs are explored in this work. Their switching capability is realized by pin diodes that enable the change of the electromagnetic response between transparent and reflecting modes at the specified frequencies in both singly and dual polarised unit cell configurations. The proposed topologies are single layer FSS with their elements acting also as dc current carrying conductors supplying the bias signal for switching pin diodes between the on and off states, thus avoiding the need of external bias lines that can cause parasitic resonances and affect the response at oblique incidence. The presented simulation results show that such active FSSs have potentially good isolation between the transmission and reflection states, while retaining the substantially subwavelength response of the unit cell with large fractional bandwidths (FBWs) inherent to the original passive FSSs.