Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES

Two type II superlattices (SLs) InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the periods of the two SLs were 31.2 angstrom and 57.3 angstrom, respectively. Room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1 mu m and 5 mu m for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The spectral response and blackbody tests were carried out at low and room temperatues. The results show that the 50% cutoff wavelengths of the two photoconductors are 2.1 mu m and 5.0 mu m respectively and D-bb* is above 2 x 10(8) cmHz(1/2)/W for two kinds of photoconductors at 77K. D-bb* is above 10(8) cmHz(1/2)/W for SWIR photoconductor at room temperature.

Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE

Interdigital metal-semiconductor-metal (MSM) ultraviolet photoconductive detectors have been fabricated on undoped GaN films grown by molecular beam epitaxy (MBE), Response dependence on wavelength, applied current, excitation powers and chopper frequency has been extensively investigated. It is shown that the photodetector's spectral response remained nearly constant for wavelengths above the band gap and dropped sharply by almost three orders of magnitude for wavelengths longer than the band gap. It increases linearly with the applied constant current, but very nonlinearly with illuminating power. The photodetectors showed high photoconductor gains resulting from trapping of minority carriers (holes) at acceptor impurities or defects. The results demonstrated the high quality of the GaN crystal used to fabricate these devices. (C) 2000 Elsevier Science B.V. All rights reserved.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Optimal Sub-Pixel arrangements and coding for ultra-high resolution three-dimensional OLED displays

Information display technology is a rapidly growing research and development field. Using state-of-the-art technology, optical resolution can be increased dramatically by organic light-emitting diode - since the light emitting layer is very thin, under 100nm. The main question is what pixel size is achievable technologically? The next generation of display will considers three-dimensional image display. In 2D , one is considering vertical and horizontal resolutions. In 3D or holographic images, there is another dimension – depth. The major requirement is the high resolution horizontal dimension in order to sustain the third dimension using special lenticular glass or barrier masks, separate views for each eye. The high-resolution 3D display offers hundreds of more different views of objects or landscape. OLEDs have potential to be a key technology for information displays in the future. The display technology presented in this work promises to bring into use bright colour 3D flat panel displays in a unique way. Unlike the conventional TFT matrix, OLED displays have constant brightness and colour, independent from the viewing angle i.e. the observer's position in front of the screen. A sandwich (just 0.1 micron thick) of organic thin films between two conductors makes an OLE Display device. These special materials are named electroluminescent organic semi-conductors (or organic photoconductors (OPC )). When electrical current is applied, a bright light is emitted (electrophosphorescence) from the formed Organic Light-Emitting Diode. Usually for OLED an ITO layer is used as a transparent electrode. Such types of displays were the first for volume manufacture and only a few products are available in the market at present. The key challenges that OLED technology faces in the application areas are: producing high-quality white light achieving low manufacturing costs increasing efficiency and lifetime at high brightness. Looking towards the future, by combining OLED with specially constructed surface lenses and proper image management software it will be possible to achieve 3D images.

Solubilizacao e interacao de pigmentos com solventes organicos e agentes tenso-ativos

A Mg e Mn-Ftalocianina (Mg e Mn-Pc) foram solubilizados à 25°C em dimetilsulfóxido (DMSO); N, N-dimetilacetamida (DMA); N,N-dimetilformamida (DMF); N-metil-formamida, formamida, piridina, o-diclorobenzeno, monoclorobenzeno, tolueno, metanol, etanol, propanol-1, propanol-2, butanol-1 e octanol-1. Alguns valores representativos obtidos para o logarítimo da absortividade molar (E) da Mn-Pc, são os seguintes: o-diclorobenzeno (E = 4,94); DMSO (E = 4,39); octanol-1 (E = 3,90). Valores correspondentes para Mg-Pc são: o-diclarobenzeno (E = 4,93); DMSO (E = 5,22) e Octanol-1 ( E = 5,06). Em função de interação com solventes, pode-se classificar a Mg-Pc como um indicador básico e a Mn-Pc como indicador ácido. Os pigmentos Mg e Mn-Pc foram também solubillzados em soluções aquosas contendo vários surfatantes à 25°C. A Mg-Pc apresentou solubilidade significativa em água contendo brometo de cetiltrimetilamônio (CTAB), Brij-35, cloreto de cetilpiridinio (CPC1), brometo de cetilpiridínio (CPBr,) Triton X-100, cloreto de metildodecilbenziltrimetilamônio, brometo de cetildimetiletilamõnio e brometo de laurilisoquinolínio. A Mn-Pc foi solúvel em soluções aquosas de Brij-35 e Triton X-100. Em função de sua interação com surfatantes a Mg-Pc é classificada como corante catiônico e a Mn-Pc como corante aniônico. O corante comercial quinóide Oil Blue A [1,4-di(isopropilarnina)-antraquinona - 9,10 foi solubilizado à 25°C em DMF, DMSO, DMA, monoclorobenzeno, benzeno, tolueno, piridina, metanol, etanol, propanol-1, propanol-2, butanol-1 e octanol-1. Foi também solubilizado em soluções aquosas de surfatantes, tais como sódio lauril-sulfato (NaLS), cloreto de cetiltrimetilamônio (CTAB), brometo de cetildimetiletilamônio, Triton X-100, cloreto de cetilpiridínio (CPCl), Brij-35, cloreto de rnetildodecilbenziltrimetilamônio e brometo de laurilisoquinolínio. Em função de suas interações com os solventes o corante é um indicador ácido-básico pouco sensível e em função de sua interação com surfatantes é um corante catiônico. 0s resultados experimentais apresentam importância teórica e prática considerando sistemas que envolvem armazenamento e transferência de energia, compostos porfirínicos, fotossíntese, fotocondutores, coletores solares, semi-condutores e processos de embelezamento e proteção de superficies de vários materiais.

Synthese und Struktur-Eigenschafts-Beziehungen von Oligo- und Poly(2,5-dipropoxy-1,4-phenylenethinylen)en

Oligomere mit konjugierten pi-Elektronensystemen sind für die Materialwissenschaften von großer Bedeutung. Die vielfältigen und umfangreichen Forschungen auf diesem Gebiet gründen im Potenzial dieser Substanzklassen, das im Bereich der Laserfarbstoffe, Leuchtdioden, Photoleiter, optische Schalter oder auch der molekularen Elektronik angesiedelt ist. Zu diesen gehören auch die in dieser Arbeit synthetisierten und untersuchten Phenylenethinylene. Die Herstellung der Oligomere erfolgt nach der Methode von Sonogashira und Hagihara. Dabei wird ein Halogenaren mit einer Alkinkomponente zur Reaktion gebracht. Als Katalysator dient dabei ein Gemisch aus Bis(triphenylphosphin-palladiumdichlorid), Kupfer-(I)-iodid und Triphenylphosphin. Verwendung fanden bei der Synthese zwei Arten von Schutzgruppen. Es handelt sich dabei einerseits um die Trimethylsilyl- und die Triisopropylsilyl-Funktion, die unabhängig voneinander in ein System eingeführt werden und selektiv wieder entfernt werden können. Die zweite Art sind die Halogene Brom und Iod, die aufgrund ihrer Eigenschaft vielmehr als 'dormant group' bezeichnet werden müssen. Eine Ethinylierung führt zunächst zur Substitution des Iod- und anschließend des Bromatoms. Die so erhaltenen Oligomere werden mit verschiedenen spektroskopischen Methoden untersucht. Besonderes Interesse liegt dabei auf der Bestimmung der effektiven Konjugationslänge (EKL). Damit ist es möglich, die Länge des konjugierten Systems zu bestimmen, das für die betreffenden Eigenschaften des entsprechenden Polymers maßgeblich ist. Das nichtlineare optische Verhalten der Oligomere wird mittels der Third-Harmonic-Generation-Methode (THG) gemessen. Die resultierende Größe, die Suszeptibilität 3. Ordnung, gibt Aufschluß über mögliche industrielle Anwendungen.

Synthese und Reaktivität styrylsubstituierter p-Benzochinone

Synthese und Reaktivität styrylsubstituierter p-Benzochinone Oligo- und Poly(1,4-phenylenvinylene) (OPV, PPV) stellen eine für die Materialwissenschaft äußerst interessante Verbindungsklasse dar, die in Form von Halbleitern, Photoleitern, elektrolumineszierenden Systemen und negativen Photoresists breitgefächerte Anwendung findet. Allerdings stellt die Alterung dieser Materialien in Gegenwart von Sauerstoff und anderen Oxidationsmitteln ein signifikantes Problem dar. So wird z. B. die technische Anwendung von Leuchtdioden auf Polymerbasis durch ihre geringe Betriebsdauer eingeschränkt. Als Beitrag zur Untersuchung des oxidativen Abbaus von Poly- bzw. Oligo(p-phenylenvinylenen) [PPV, OPV] wurden verschiedene 2-Styryl-1,4-benzochinone - sowie höhere Oligomere - synthetisiert, die das Strukturelement einer hoch oxidierten Form von OPV's aufweisen. Durch Einführung einer Cyanogruppe an der olefinischen Doppelbindung wurde die Reaktivität der Modellsysteme gezielt beeinflußt. Die 2-Styryl-1,4-benzochinone mit unsubstituierter Doppelbindung dimerisieren in Lösung quantitativ im Sinne von Diels-Alder-Reaktionen zu den entsprechenden Cycloaddukten. Die Dimerisierungen verlaufen chemo-, regio- und stereoselektiv, was sich anhand von Grenzorbital-Betrachtungen erklären läßt.An der Oberfläche von Kieselgel erfolgt eine vollständige Umwandlung der Dimere, deren zwei Hauptprodukte identifiziert werden konnten: Neben Verbindungen, die durch eine intramolekulare [4+2]-Cycloaddition nach erfolgter Dehydrierung / Oxidation gebildet werden, entstehen verschiedene Additionsprodukte der Dimere mit Nucleophilen (Wasser, Ethanol). Cyanosubstitution führt bereits bei den als Vorstufe dienenden Stilbenen zu einer erleichterten (E/Z)-Photoisomerisierung in Lösung, die zu einem photostationären Gleichgewicht führt, welches sich durch einen hohen Anteil der (E)-Konfiguration auszeichnet. Nach erfolgter Oxidation kann ebenfalls eine Dimerisierung beobachtet werden. Bei direkter Nachbarschaft der Cyanogruppe zum Chinonring erfolgt stattdessen ein intramolekularer Ringschluß unter Ausbildung eines Benzofuranderivats.Die beobachtete Reaktivität der synthetisierten Chinonsysteme steht in Einklang mit einem möglichen sekundären Abbaumechanismus, der nach primärer Oxidation zu der Alterung von PPV's beitragen kann.