996 resultados para P-SEXIPHENYL CRYSTALS


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Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively.

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We systematically investigated the weak epitaxy growth (WEG) behavior of a series of planar phthalocyanine compounds (MPc), i.e., metal-free phthalocyanine (H2PC), nickel phthalocyanine (NiPc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), iron phthalocyanine (FePc); cobalt phthalocyanine (CoPc), grown on a p-sexiphenyl (p-6P) monolayer film by selected area electron diffraction (SAED) and atomic force microscopy (AFM). Two types of epitaxial relations, named as incommensurate epitaxy and commensurate epitaxy, were identified between phthalocyanine compounds and the substrate of the p-6P film.

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Weak epitaxy growth (WEG) behavior and mechanism of copper hexadecafluorophthalocyanine (F16CuPc) on p-sexiphenyl (p-6P) monolayer film were investigated by atomic force microscopy (AFM), selected area electron diffraction (SEAD), and wide-angle X-ray diffraction (WAXD). High-quality F16CuPc films with high order, large size, and molecular-level smoothness were obtained successfully by WEG method. It was identified that there exists incommensurate epitaxial relation between highly oriented F16CuPc and p-6P films. The geometrical channels of p-6P monolayer surface induce the nucleation and growth of F16CuPc molecules.

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Strong supramolecular interactions, which induced tight packing and rigid molecules in crystals of cyano substituent oligo(para-phenylene vinylene) (CN-DPDSB), are the key factor for the high luminescence efficiency of its crystals; opposite to its isolated molecules in solution which have very low luminescence efficiency.

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2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxdiazole (PBD) is a good electron-transporting material and can form single crystals from solution. In this work, solution cast PBD single crystals with different crystallographic axes (b, c) perpendicular to the Au/S substrates in large area are achieved by controlling the rate of solvent evaporation in the presence and absence of external electrostatic field, respectively. The orientation of these single crystals on Au/S substrate was characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Conducting probe atomic force microscopy (CP-AFM) was used to measure the charge transport characteristics of PBD single crystals grown on Au/S substrates. Transport was measured perpendicular to the substrate between the CP-AFM tip and the Au/S substrate. The electron mobility of 3 x 10(-3) cm(2)/(V s) for PBD single crystal along crystallographic b-axis is determined. And the electron mobility of PBD single crystal along the c-axis is about 2 orders of magnitude higher than that along the b-axis due to the anisotropic charge transport at the low voltage region.

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With the advent of the laser in the year 1960, the field of optics experienced a renaissance from what was considered to be a dull, solved subject to an active area of development, with applications and discoveries which are yet to be exhausted 55 years later. Light is now nearly ubiquitous not only in cutting-edge research in physics, chemistry, and biology, but also in modern technology and infrastructure. One quality of light, that of the imparted radiation pressure force upon reflection from an object, has attracted intense interest from researchers seeking to precisely monitor and control the motional degrees of freedom of an object using light. These optomechanical interactions have inspired myriad proposals, ranging from quantum memories and transducers in quantum information networks to precision metrology of classical forces. Alongside advances in micro- and nano-fabrication, the burgeoning field of optomechanics has yielded a class of highly engineered systems designed to produce strong interactions between light and motion.

Optomechanical crystals are one such system in which the patterning of periodic holes in thin dielectric films traps both light and sound waves to a micro-scale volume. These devices feature strong radiation pressure coupling between high-quality optical cavity modes and internal nanomechanical resonances. Whether for applications in the quantum or classical domain, the utility of optomechanical crystals hinges on the degree to which light radiating from the device, having interacted with mechanical motion, can be collected and detected in an experimental apparatus consisting of conventional optical components such as lenses and optical fibers. While several efficient methods of optical coupling exist to meet this task, most are unsuitable for the cryogenic or vacuum integration required for many applications. The first portion of this dissertation will detail the development of robust and efficient methods of optically coupling optomechanical resonators to optical fibers, with an emphasis on fabrication processes and optical characterization.

I will then proceed to describe a few experiments enabled by the fiber couplers. The first studies the performance of an optomechanical resonator as a precise sensor for continuous position measurement. The sensitivity of the measurement, limited by the detection efficiency of intracavity photons, is compared to the standard quantum limit imposed by the quantum properties of the laser probe light. The added noise of the measurement is seen to fall within a factor of 3 of the standard quantum limit, representing an order of magnitude improvement over previous experiments utilizing optomechanical crystals, and matching the performance of similar measurements in the microwave domain.

The next experiment uses single photon counting to detect individual phonon emission and absorption events within the nanomechanical oscillator. The scattering of laser light from mechanical motion produces correlated photon-phonon pairs, and detection of the emitted photon corresponds to an effective phonon counting scheme. In the process of scattering, the coherence properties of the mechanical oscillation are mapped onto the reflected light. Intensity interferometry of the reflected light then allows measurement of the temporal coherence of the acoustic field. These correlations are measured for a range of experimental conditions, including the optomechanical amplification of the mechanics to a self-oscillation regime, and comparisons are drawn to a laser system for phonons. Finally, prospects for using phonon counting and intensity interferometry to produce non-classical mechanical states are detailed following recent proposals in literature.

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The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

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Sodium p-nitrophenolate dihydrate single crystals possess excellent nonlinear optical properties such that they can be used for optical second-harmonic generation. It belongs to the orthorhombic system with the space group Ima2. Slow evaporation or slow cooling techniques can be used to grow good optical quality single crystals from supersaturated solution. All the nine elastic constants of this crystal have been measured using an ultrasonic technique. Samples for measurements have been cut along desired crystallographic axes and the pulse echo overlap technique has been used to measure longitudinal and shear ultrasonic wave velocities along appropriate symmetry directions in the crystal. The McSkimin Delta t criterion has been applied to determine the round trip travel time accurately, from which the nine elastic constants have been evaluated. Temperature variation of selected elastic constants in a limited range have also been measured and reported.

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A novel pair of the E- and Z-isomeric 1R,4R-2-(4-heptyloxyphenyl)-benzylidene-p-menthan-3-ones has been prepared and the influence of distinctions in their molecular geometry on macroscopic properties of liquid crystal systems with the induced supra-molecular helical structure has been studied. The significantly lower helical twisting power of the chiral Z-isomer in comparison with that of E- one has been confirmed in the case of induced cholesteric systems based on 4-pentyl-4-cyanobiphenyl. The phase behavior and ferroelectric characteristics have been investigated for smectic-C* compositions based on the eutectic mixture of the homological 4-hexyloxyphenyl-4'-hexyloxy- and 4-hexyloxyphenyl-4'-octyloxybenzoates containing the novel isomeric chiral dopants. The spontaneous polarisation of the opposite signs induced by the isomeric chiral components has been revealed for the compositions studied. Distinctions in phase states, absolute values of the spontaneous polarization, smectic tilt angle and rotation viscosity of the systems obtained are discussed.

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Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.

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The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

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A novel series of compounds with different counter anions, i.e. 1-{[4-(4-nitrophenylazo)phenyloxy]}alkyl-3-methyl-1H-imidazol-3-ium bromide salts (C-n , n=3, 6, 10) and tetrafluoroborate salts (D-n , n=3, 6, 10), were synthesised by the incorporation of an imidazolium group into paraffin side chain-terminated 4-nitroazobenzene derivatives. Their chemical structures were determined by H-1 NMR, C-13 NMR, UV spectroscopy and elemental analysis.

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The energy band structures of LaX(X=N, P, As, Sb) crystals have been studied by using LMTO-ASA method. The calculated energy gaps of these crystals are 2. 30 eV for LaN, 2. 05 eV for LaP, 1. 66 eV for LaAs and 1. 34 eV for LaSb. The results are in good agreement with experimental data, At the same time, using these calculated results of energy band structures of these crystals, the chemical bond properties have been analyzed and calculated, The covalency values of these crystals are 26.15% for LaN, 32.54% for LaP, 33.30% for LaAs and 36.49% for LaSb, which agree satisfactorily with the calculated ones by using PV (Phillips-Vechten) theory.

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By using Pillips and van Vechten theory, the chemical bond parameters and dielectric constants of REM (RE=rare earth, M=N, P, As, Sb) crystals were calculated. The values calculated of dielectric constants agree with the experimental values.