Highly efficient diode side-pumped Nd : YAG ceramic laser with 210W output power

We developed a highly efficient diode side-pumped Nd:YAG ceramic laser with a diffusive reflector as an optical pump cavity. A maximum output power of 211.6W was obtained with an optical -to- optical conversion efficiency of 48.7%. This corresponds to the highest conversion efficiency in the side-pumped ceramic rod. Thermal effects of the Nd:YAG ceramic rod were analyzed in detail through the measurements of laser output powers and beam profiles near the critically unstable region. A M-2 beam quality factor of 18.7 was obtained at the maximum laser output power. (c) 2006 Elsevier Ltd. All rights reserved.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

An optimal under-frequency load shedding strategy considering distributed generators and load static characteristics

The well-established under-frequency load shedding (UFLS) is deemed to be the last of effective remedial measures against a severe frequency decline of a power system. With the ever-increasing size of power systems and the extensive penetration of distributed generators (DGs) in power systems, the problem of developing an optimal UFLS strategy is facing some new challenges. Given this background, an optimal UFLS strategy for a distribution system with DGs and load static characteristics taken into consideration is developed. Based on the frequency and the rate of change of frequency, the presented strategy consists of several basic rounds and a special round. In the basic round, the frequency emergency can be alleviated by quickly shedding some loads. In the special round, the frequency security can be maintained, and the operating parameters of the distribution system can be optimized by adjusting the output powers of DGs and some loads. The modified IEEE 37-node test feeder is employed to demonstrate the essential features of the developed optimal UFLS strategy in the MATLAB/SIMULINK environment.

A class E resonant inverter for use as electronic fluorescent lamp ballast

Class E Resonant Inverters are theoretically capable of delivering any power to a load and achieve 100% efficiency at any frequency of operation. In practice efficiency in the “high 90's” can be achieved into megahertz frequencies regardless of inverter output powers. The topology also allows the manipulation of output power through sub-optimal operation, with a negligible efficiency penalty. The 24W inverter discussed in this paper was specifically designed to harness the benefits, and discuss the shortcomings, of the Class E topology for use in the growing market for portable, battery powered lighting. It exhibits a peak recorded power efficiently of over 98%, and a conservatively measured efficiency of 95% across a range of dimming settings.

High efficiency auxiliary power converters

The auxiliary load DC-DC converters of the Sunshark solar car have never been examined. An analysis of the current design reveals it is complicated, and inefficient. Some simple measures to greatly improve the efficiency are present which will achieve an overall worthwhile power saving. Two switch-mode power supply DC-DC converter designs are presented. One is a constant current supply for the LED brake and turn indicators, which allows them to be powered directly from the main DC bus, and switched only as necessary. The second is a low power flyback converter, which employs synchronous rectification among other techniques to achieve good efficiency and regulation over a large range of output powers. Practical results from both converters, and an indication of the overall improvement in system efficiency will be offered.

Cr~(2+):ZnSe的激光输出和调谐性能

Cr~(2+):ZnSe具有很宽的吸收带和发射带,是中红外波段优秀的可调谐激光材料。从吸收光谱、发射光谱以及角度调谐输出对Cr~(2+):ZnSe晶体的激光输出性能进行了研究。采用真空高温扩散法制备Cr~(2+):ZnSe晶体.获得了高浓度的Cr~(2+)离子掺杂的厚1.7 mm,直径10 mm的薄片ZnSe晶体。使用中心波长2.05μm,最大输出功率8 W的Tm离子掺杂的光纤激光器抽运,使用平凹腔结构搭建谐振腔,获得了最大平均功率1.034 W,中心波长2.367μm,线宽10 nm的连续激光输出。利用角度调谐的方法,对Cr:ZnSe晶体的调谐性能进行了研究,在100 nm范围内获得了调谐输出。

Yb:YAG/YAG复合陶瓷薄片连续和调Q输出特性

采用面泵浦的CAMIL结构，我们研究了970 nm泵浦的Yb:YAG/YAG复合陶瓷薄片激光器，获得了连续和调Q的激光输出。在连续运转情况下，获得了最高1.05 W的激光输出，中心波长为1031 nm，后腔输出镜透射率为2％。我们同时获得了声光调Q的脉冲输出，重复频率从1 kHz到30 kHz，脉宽分别从166 ns到700 ns。

多模光纤激光器实现高功率低阶模输出

采用光纤缠绕的方法，来抑制大模场面积（LMA）双包层光纤激光器中的高阶模振荡。将光纤缠绕至两种不同半径，实验测量了相应条件下激光器的输出功率和光束质量因子M2。缠绕半径为165mm时，输出功率为217W，M2为2.96；缠绕半径为52mm时，输出功率为160W，M2为1.38。光纤激光器相应的斜率效率分别为60％和48％。光纤缠绕半径较小时，虽然激光器输出功率减小，但其亮度是大缠绕半径时对应值的3.4倍。

光纤激光器自成像腔相干组束研究

探讨了3种不同自成像腔，即Talbot腔、自傅里叶变换腔（SF）和傅里叶变换自成像腔实现相干组束的机理和技术难点。介绍了利用光纤激光器，采用傅里叶变换自成像方法，实现1维2路和2维4路激光相干组束的实验情况，功率分别达到122W以及26W。

Diode-pumped Q-switched Tm:YAP laser with a pump recycling scheme

We reported on a diode end-pumped AO Q-switched Tm:YAP laser at 1937 nm. The average output power was 3.9 W, with a slope efficiency of 29.4% and optical-optical conversion efficiency of 21.6% at a 5-kHz repetition rate. The temperature dependency of the output power and the pulse width at different repetition rates were investigated in details.

Optimum Magnetic Circuit Configurations for Permanent Magnet Aerospace Generators

In the design of high-speed low-power electrical generators for unmanned aircraft and spacecraft, maximization of specific output (power/weight) is of prime importance. Several magnetic circuit configurations (radial-field, axial-field, flux-squeezing, homopolar) have been proposed, and in this paper the relative merits of these configurations are subjected to a quantitative investigation over the speed range 10 000–100000 rev/min and power range 250 W-10 kW. The advantages of incorporating new high energy-density magnetic materials are described. Part I deals with establishing an equivalent circuit for permanent-magnet generators. For each configuration the equivalent circuit parameters are related to the physical dimensions of the generator components and an optimization procedure produces a minimum volume design at discrete output powers and operating speeds. The technique is illustrated by a quantitative comparison of the specific outputs of conventional radial-field generators with samarium cobalt and alnico magnets. In Part II the specific outputs of conventional, flux-squeezing, and claw-rotor magnetic circuit configurations are compared. The flux-squeezing configuration is shown to produce the highest specific output for small sizes whereas the conventional configuration is best at large sizes. For all sizes the claw-rotor configuration is significantly inferior. In Part III the power densities available from axial-field and flux-switching magnetic circuit configurations are maximized, over the power range 0.25-10 kW and speed range 10 000–100000 rpm, and compared to the results of Parts I & II. For the axial-field configuration the power density is always less than that of the conventional and flux-squeezing radial-field configurations. For the flux-switching generator, which is able to withstand relatively high mechanical forces in the rotor, the power density is again inferior to the radial-field types, but the difference is less apparent for small (low power, high speed) generator sizes. From the combined results it can be concluded that the flux-squeezing and conventional radial-field magnetic circuit configurations yield designs with minimum volume over the power and speed ranges considered. © 1985, IEEE. All rights reserved.

Graphene modelocked VECSELs

In the past decade, passively modelocked optically pumped vertical external cavity surface emitting lasers (OPVECSELs), sometimes referred to as semiconductor disk lasers (OP-SDLs), impressively demonstrated the potential for generating femtosecond pulses at multi-Watt average output powers with gigahertz repetition rates. Passive modelocking with a semiconductor saturable absorber mirror (SESAM) is well established and offers many advantages such as a flexible design of the parameters and low non-saturable losses. Recently, graphene has emerged as an attractive wavelength-independent alternative saturable absorber for passive modelocking in various lasers such as fiber or solid-state bulk lasers because of its unique optical properties. Here, we present and discuss the modelocked VECSELs using graphene saturable absorbers. The broadband absorption due to the linear dispersion of the Dirac electrons in graphene makes this absorber interesting for wavelength tunable ultrafast VECSELs. Such widely tunable modelocked sources are in particularly interesting for bio-medical imaging applications. We present a straightforward approach to design the optical properties of single layer graphene saturable absorber mirrors (GSAMs) suitable for passive modelocking of VECSELs. We demonstrate sub-500 fs pulses from a GSAM modelocked VECSEL. The potential for broadband wavelength tuning is confirmed by covering 46 nm in modelocked operation using three different VECSEL chips and up to 21 nm tuning in pulsed operation is achieved with one single gain chip. A linear and nonlinear optical characterization of different GSAMs with different absorption properties is discussed and can be compared to SESAMs. © 2014 SPIE.

Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces

p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 Elsevier Ltd. All rights reserved.

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.