National apprenticeship and training standards for optical technician : (contact lens technician).

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All-Optical Label Stacking: Easing the Trade-offs Between Routing and Architecture Cost in All-Optical Packet Switching

All-optical label swapping (AOLS) forms a key technology towards the implementation of all-optical packet switching nodes (AOPS) for the future optical Internet. The capital expenditures of the deployment of AOLS increases with the size of the label spaces (i.e. the number of used labels), since a special optical device is needed for each recognized label on every node. Label space sizes are affected by the way in which demands are routed. For instance, while shortest-path routing leads to the usage of fewer labels but high link utilization, minimum interference routing leads to the opposite. This paper studies all-optical label stacking (AOLStack), which is an extension of the AOLS architecture. AOLStack aims at reducing label spaces while easing the compromise with link utilization. In this paper, an integer lineal program is proposed with the objective of analyzing the softening of the aforementioned trade-off due to AOLStack. Furthermore, a heuristic aiming at finding good solutions in polynomial-time is proposed as well. Simulation results show that AOLStack either a) reduces the label spaces with a low increase in the link utilization or, similarly, b) uses better the residual bandwidth to decrease the number of labels even more

Optical non-destructive evaluation of articular cartilage integrity : a review

This paper reviews the current status of the application of optical non-destructive methods, particularly infrared (IR) and near infrared (NIR), in the evaluation of the physiological integrity of articular cartilage. It is concluded that a significant amount of work is still required in order to achieve specificity and clinical applicability of these methods in the assessment and treatment of dysfunctional articular joints.

Urea-based constructs readily amplify and attenuate nonlinear optical activity in response to H-bonding and anion recognition

Urea-based molecular constructs are shown for the first time to be nonlinear optically (NLO) active in solution. We demonstrate self-assembly triggered large amplification and specific anion recognition driven attenuation of the NLO activity. This orthogonal modulation along with an excellent nonlinearity-transparency trade-off makes them attractive NLO probes for studies related to weak self-assembly and anion transportation by second harmonic microscopy.

Combined transparency and optical nonlinearity enhancement in flexible covalent multimers by operating through-space interactions between dipolar chromophores

Subtle manipulation of mutual repulsion and polarisation effects between polar and polarisable chromophores forced in closed proximity allows achieving major (100%) enhancement of the first hyperpolarisability together with increased transparency, breaking the well-known nonlinearity-transparency trade-off paradigm.

Modulation formats for next-generation optical datacommunications

This paper considers next-generation optical datacommunication standards and discusses the types of modulation formats that are relevant. The performance of several schemes is considered over multimode fibre. The trade-offs between the different modulation formats are considered in terms of link length, receiver sensitivity and complexity of implementation. © 2011 IEEE.

Electrical and optical properties of ion implanted SOI-based photonic crystals

We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found. © 2011 IEEE.

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.

Electronic structure and optical gain of truncated InAs1-xNx/GaAs quantum dots

The shape of truncated square-based pyramid quantum dots (QDs) is similar to that of real QDs in experiments. The electronic band structures and optical gain of InAs1-xNx/GaAs QDs are calculated by using the 10-band k.p model, and the strain is calculated by the valence force field (VFF) method. When the top part of the QD is truncated, greater truncation corresponds to a flatter shape of the QD. The truncation changes the strain distribution and the confinement in the z direction. A flatter QD has a greater C1-HH1 transition energy, greater transition matrix element, less detrimental effect of higher excited transition, and higher saturation gain and differential gain. The trade-off between these properties must be considered. From our results, a truncated QD with half of its top part removed has better overall performance. This can provide guidance to growing QDs in experiments in which the proper growing conditions can be controlled to achieve required properties. (C) 2009 Elsevier Ltd. All rights reserved.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3143025]

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

Quantum criptography in optical fibers

As comunicações quânticas aplicam as leis fundamentais da física quântica para codificar, transmitir, guardar e processar informação. A mais importante e bem-sucedida aplicação é a distribuição de chaves quânticas (QKD). Os sistemas de QKD são suportados por tecnologias capazes de processar fotões únicos. Nesta tese analisamos a geração, transmissão e deteção de fotões únicos e entrelaçados em fibras óticas. É proposta uma fonte de fotões única baseada no processo clássico de mistura de quatro ondas (FWM) em fibras óticas num regime de baixas potências. Implementamos essa fonte no laboratório, e desenvolvemos um modelo teórico capaz de descrever corretamente o processo de geração de fotões únicos. O modelo teórico considera o papel das nãolinearidades da fibra e os efeitos da polarização na geração de fotões através do processo de FWM. Analisamos a estatística da fonte de fotões baseada no processo clássico de FWM em fibras óticas. Derivamos um modelo teórico capaz de descrever a estatística dessa fonte de fotões. Mostramos que a estatística da fonte de fotões evolui de térmica num regime de baixas potências óticas, para Poissoniana num regime de potências óticas moderadas. Validamos experimentalmente o modelo teórico, através do uso de fotodetetores de avalanche, do método estimativo da máxima verossimilhança e do algoritmo de maximização de expectativa. Estudamos o processo espontâneo de FWM como uma fonte condicional de fotões únicos. Analisamos a estatística dessa fonte em termos da função condicional de coerência de segunda ordem, considerando o espalhamento de Raman na geração de pares de fotões, e a perda durante a propagação de fotões numa fibra ótica padrão. Identificamos regimes apropriados onde a fonte é quase ideal. Fontes de pares de fotões implementadas em fibras óticas fornecem uma solução prática ao problema de acoplamento que surge quando os pares de fotões são gerados fora da fibra. Exploramos a geração de pares de fotões através do processo espontâneo de FWM no interior de guias de onda com suceptibilidade elétrica de terceira ordem. Descrevemos a geração de pares de fotões em meios com elevado coeficiente de absorção, e identificamos regimes ótimos para o rácio contagens coincidentes/acidentais (CAR) e para a desigualdade de Clauser, Horne, Shimony, and Holt (CHSH), para o qual o compromisso entre perda do guia de onda e não-linearidades maximiza esses parâmetros.

Evaluation of digital optical density of bone repair in rats medicated with ketoprofen

O objetivo deste estudo foi avaliar a influência do cetoprofeno sobre o processo de reparação óssea em tíbias de ratos, por meio da análise da densidade óptica digital. Vinte ratos da linhagem Wistar foram divididos em 2 grupos: um grupo controle (sem tratamento) e um grupo tratado com cetoprofeno. Os procedimentos experimentais consistiram de: anestesia, cirurgia, administração do cetoprofeno e exame radiográfico. As imagens radiográficas foram adquiridas empregando-se o sensor digital Visualix GX-S-HDI™ e um aparelho de raios X. As radiografias foram realizadas nos períodos baseline (inicial), 7, 14, 21 e 30 dias pós-operatório, sendo a densidade óptica (DO) avaliada por meio do sistema Vix winTM 1.4. Os valores médios da leitura da do obtidos foram analisados estatisticamente por meio de ANOVA e teste de Tukey com nível de significância de 5%. No grupo controle, houve diferença estatisticamente significante (p=0,001) entre o tempo e a DO, enquanto no grupo tratado com cetoprofeno a diferença não foi estatisticamente significante (p=0,100). O grupo controle apresentou as menores proporções de do (%) no 1º e 7º dias e as maiores proporções de do (%) no 14º, 21º e 30º dias, com diferença estatisticamente significante (p=0,001). Não houve diferença estatisticamente significante (p=0,100) entre as proporções médias de do (%) no grupo tratado, independentemente do período de avaliação. Os achados deste trabalho sugerem que houve influência do cetoprofeno sobre o processo de reparo ósseo, uma vez que na primeira semana o medicamento proporcionou aumento na densidade óptica e provocou atraso na neoformação óssea após o 21º dia.

Silicon Photonics Integrated Circuits for Flexible Optical Systems

This dissertation deals with the design and the characterization of novel reconfigurable silicon-on-insulator (SOI) devices to filter and route optical signals on-chip. Design is carried out through circuit simulations based on basic circuit elements (Building Blocks, BBs) in order to prove the feasibility of an approach allowing to move the design of Photonic Integrated Circuits (PICs) toward the system level. CMOS compatibility and large integration scale make SOI one of the most promising material to realize PICs. The concepts of generic foundry and BB based circuit simulations for the design are emerging as a solution to reduce the costs and increase the circuit complexity. To validate the BB based approach, the development of some of the most important BBs is performed first. A novel tunable coupler is also presented and it is demonstrated to be a valuable alternative to the known solutions. Two novel multi-element PICs are then analysed: a narrow linewidth single mode resonator and a passband filter with widely tunable bandwidth. Extensive circuit simulations are carried out to determine their performance, taking into account fabrication tolerances. The first PIC is based on two Grating Assisted Couplers in a ring resonator (RR) configuration. It is shown that a trade-off between performance, resonance bandwidth and device footprint has to be performed. The device could be employed to realize reconfigurable add-drop de/multiplexers. Sensitivity with respect to fabrication tolerances and spurious effects is however observed. The second PIC is based on an unbalanced Mach-Zehnder interferometer loaded with two RRs. Overall good performance and robustness to fabrication tolerances and nonlinear effects have confirmed its applicability for the realization of flexible optical systems. Simulated and measured devices behaviour is shown to be in agreement thus demonstrating the viability of a BB based approach to the design of complex PICs.