Simplified theory of optical nonlinearities in spin-polarized semiconductors

The spin degree of freedom is largely disregarded in existing theories of the density-dependent optical properties of an interacting electron-hole plasma in quasiequilibrium. Here, we extended the pair equation, which is applicable to a bulk semiconductor at elevated temperatures, to calculate optical nonlinearities due to a spin-polarized plasma. We obtained agreement with recent circular dichroism data in laser-excited GaAs by using the plasma density alone as the fitting parameter. The simplicity of our theory, based on the analytical pair-equation formula, makes it ideal for conveniently modelling absorption in a carrier spin-polarized semiconductor.

Quasiequilibrium optical nonlinearities from spin-polarized carriers in GaAs

Semiconductor Bloch equations, which microscopically describe the dynamics of a Coulomb interacting, spin-unpolarized electron-hole plasma, can be solved in two limits: the coherent and the quasiequilibrium regimes. These equations have been recently extended to include the spin degree of freedom and used to explain spin dynamics in the coherent regime. In the quasiequilibrium limit, one solves the Bethe-Salpeter equation in a two-band model to describe how optical absorption is affected by Coulomb interactions within a spin unpolarized plasma of arbitrary density. In this work, we modified the solution of the Bethe-Salpeter equation to include spin polarization and light holes in a three-band model, which allowed us to account for spin-polarized versions of many-body effects in absorption. The calculated absorption reproduced the spin-dependent, density-dependent, and spectral trends observed in bulk GaAs at room temperature, in a recent pump-probe experiment with circularly polarized light. Hence, our results may be useful in the microscopic modeling of density-dependent optical nonlinearities due to spin-polarized carriers in semiconductors.

Simplified theory of optical nonlinearities in spin-polarized bulk GaAs

Apart from their intrinsic physical interest, spin-polarized many-body effects are expected to be important to the working of spintronic devices. A vast literature exists on the effects of a spin-unpolarized electron-hole plasma on the optical properties of a semiconductor. Here, we include the spin degree of freedom to model optical absorption of circularly polarized light by spin-polarized bulk GaAs. Our model is easy to implement and does not require elaborate numerics, since it is based on the closed-form analytical pair-equation formula that is valid in 3d. The efficacy of our approach is demonstrated by a comparison with recent experimental data.

Simplified theory of optical nonlinearities in spin-polarized bulk GaAs

Apart from their intrinsic physical interest, spin-polarized many-body effects are expected to be important to the working of spintronic devices. A vast literature exists on the effects of a spin-unpolarized electron-hole plasma on the optical properties of a semiconductor. Here, we include the spin degree of freedom to model optical absorption of circularly polarized light by spin-polarized bulk GaAs. Our model is easy to implement and does not require elaborate numerics, since it is based on the closed-form analytical pair-equation formula that is valid in 3d. The efficacy of our approach is demonstrated by a comparison with recent experimental data.

Spectrally broadened excitonic absorption and enhanced optical nonlinearities in Dy3+-doped ZnO nanoparticles

We have synthesized Dy3+-doped ZnO nanoparticles at room temperature through the sol-gel method. X-ray diffraction and Scanning electron microscopic studies confirm the crystalline nature of the particles. Excitonic absorption of ZnO shows three different bands, and we observe that incorporation of Dy3+ results in the shifting and broadening of the n=1 absorption band of ZnO. Photoluminescence studies done at the excitation wavelength of 335 nm show broad emission containing five different bands. Open-aperture z-scan studies done at 532 nm using 5 ns laser pulses show an optical limiting behavior, which numerically fits to a three-photon type absorption process. The nonlinearity is essentially resonant, as it is found to increase consistently with Dy3+ concentration. This feature makes Dy3+-doped ZnO a flexible optical limiter for potential device applications.

Hydrogen-bond-directed self-assembly of D-(+)-dibenzoyltartaric acid and 4-aminopyridine: optical nonlinearities and stoichiometry-dependent novel structural features

Attempts to prepare hydrogen-bond-directed nonlinear optical materials from a 1:1 molar mixture Of D-(+)-dibenzoyltartaric acid (DBT, I) and 4-aminopyridine (4-AP, II) resulted in two salts of different stoichiometry. One of them crystallizes in an unusual 1.5:1 (acid:base) monohydrate salt form III while the other one crystallizes as 1:1 (acid:base) salt IV. Crystal structures of both of the salts were determined from single-crystal X-ray diffraction data. The salt III crystallizes in a monoclinic space group C2 with a = 30.339(l), b = 7.881(2), c = 14.355(1) angstrom, beta = 97.48(1)degrees, V = 3403.1(9) angstrom3, Z = 4, R(w) = 0.058, R(w)= 0.058. The salt IV also crystallizes in a monoclinic space group P2(1) with a = 7.500(1), b = 14.968(2), c = 10.370(1) angstrom, beta = 102.67(1)degrees, V = 1135.9(2) angstrom3, Z = 2, R = 0.043, R(w) = 0.043. Interestingly, two DBT molecules with distinctly different conformation are present in the same crystal lattice of salt III. Extensive hydrogen-bonding interactions are found in both of the salts, and both of them show SHG intensity 1.4-1.6 times that of urea.

Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

Effect of hydrogen bonds on optical nonlinearities of inorganic crystals

This work probes the role of hydrogen bonds (such as O-H ... O and N-H ... O) in some inorganic nonlinear optical (NLO) crystals, such as HIO3, NH4H2PO4 (ADP), K[B5O6(OH)(4)] . 2H(2)O (KB5) and K2La(NO3)(5) . 2H(2)O (KLN), from the chemical bond standpoint. Second order NLO behaviors of these four typical inorganic crystals have been quantitatively studied, results show hydrogen bonds play a very important role in NLO contributions to the total nonlinearity. Conclusions derived here concerning the effect of hydrogen bonds on optical nonlinearities of inorganic crystals have important implications with regard to the utilization of hydrogen bonds in the structural design of inorganic NLO crystals. (C) 1999 Elsevier Science B.V. All rights reserved.

Optical Nonlinearities at the Interface between Glass and Liquid Crystal

In this paper, the optical behavior of a nonlinear interface is studied. The nonlinear medium has been a nematic liquid crystal, namely MBBA, and the nonlinear one, glasses of different types (F-10 and F-2) depending on the experimental needs. The anchoring forces at the boundary have been found to inhibit the action of the evanescent field in the case of total internal reflection. Most of observed nonlinearities are due to thermal effects. As a consequence, liquid crystals do not seem to be good candidates for total internal reflection optical bistability.

Optical Nonlinearities Between Glass And Liquid Crystal

The nonlinear optical properties of the interface between glass and liquid crystal are reported. Switching characteristics and optical hysterfisis have beam studied.

Optical nonlinearities at the interface between liquid crystal and glass: behavior of the transmitted beam.

During the past years a great interest has been devoted to the study of possible applications of non-linear interfaces, mainly in the field of Optical Bistability. Several papers have been published in this field, and some of them dealing with liquid crystals as non-linear material.

Optical nonlinearities and blstability in a glass-liquid crystal interface

As reported previously, an interface between linear and liquid crystal media shows some nonlinear properties that can be employed in the analysis of this type of optical bistable device.

Optical nonlinearity in lead sulfide microtowers

Lead sulfide (PbS) microtowers on silicon substrates, having the physical properties of bulk PbS, have been synthesized. Optical nonlinearity studies using the open aperture z-scan technique employing 5 ns and 100 fs laser pulses reveal effective two-photon type absorption. For nanosecond excitation the nonlinear absorption coefficients (beta(eff)) are in the order of 10(-11) m W-1, two orders of magnitude less than the values reported for quantum confined PbS nanocrystals. For femtosecond excitation beta(eff) is of the order of 10(-14) m W-1. These results obtained in bulk PbS experimentally confirm the importance of quantum confinement in the enhancement of optical nonlinearities in semiconductor materials.

The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

Linear and nonlinear intersubband optical properties in a step quantum well with an applied electric field

Within the framework of the effective-mass envelope-function theory, the field-dependent intersubband optical properties of a Al0.4Ga0.6As/Al0.2Ga0.8As/GaAs step quantum well are investigated theoretically based on the periodic boundary condition. A very large Stark shift occurs when the lowest subband electron remains confined to the small well while the higher subband electron confined to the big well. The optical nonlinearity in a step well due to resonant intersubband transition (ISBT) is analyzed using a density-matrix approach. The second-harmonic generation coefficient chi(2 omega)((2)) and nonlinear optical rectification chi(0)((2)) have also been investigated theoretically. The results show that the ISBT in a step well can generate very large second order optical nonlinearities, chi(0)((2)) and chi(2 omega)((2)) can be tuned by the electric field over a wide range.