Étude de la cinétique et des dommages de gravure par plasma de couches minces de nitrure d’aluminium

Une étape cruciale dans la fabrication des MEMS de haute fréquence est la gravure par plasma de la couche mince d’AlN de structure colonnaire agissant comme matériau piézoélectrique. Réalisé en collaboration étroite avec les chercheurs de Teledyne Dalsa, ce mémoire de maîtrise vise à mieux comprendre les mécanismes physico-chimiques gouvernant la cinétique ainsi que la formation de dommages lors de la gravure de l’AlN dans des plasmas Ar/Cl2/BCl3. Dans un premier temps, nous avons effectué une étude de l’influence des conditions opératoires d’un plasma à couplage inductif sur la densité des principales espèces actives de la gravure, à savoir, les ions positifs et les atomes de Cl. Ces mesures ont ensuite été corrélées aux caractéristiques de gravure, en particulier la vitesse de gravure, la rugosité de surface et les propriétés chimiques de la couche mince. Dans les plasmas Ar/Cl2, nos travaux ont notamment mis en évidence l’effet inhibiteur de l’AlO, un composé formé au cours de la croissance de l’AlN par pulvérisation magnétron réactive et non issu des interactions plasmas-parois ou encore de l’incorporation d’humidité dans la structure colonnaire de l’AlN. En présence de faibles traces de BCl3 dans le plasma Ar/Cl2, nous avons observé une amélioration significative du rendement de gravure de l’AlN dû à la formation de composés volatils BOCl. Par ailleurs, selon nos travaux, il y aurait deux niveaux de rugosité post-gravure : une plus faible rugosité produite par la présence d’AlO dans les plasmas Ar/Cl2 et indépendante de la vitesse de gravure ainsi qu’une plus importante rugosité due à la désorption préférentielle de l’Al dans les plasmas Ar/Cl2/BCl3 et augmentant linéairement avec la vitesse de gravure.

High temperature flexural strength and fracture toughness of AlN with Y(2)O(3) ceramic

The effects of temperature on the fast fracture behavior of aluminum nitride with 5 wt% Y(2)O(3) ceramic were investigated. Four-point flexural strength and fracture toughness were measured in air at several temperatures (30-1,300 A degrees C). The flexural strength gradually decreased with the increase of temperature up to 1,000 A degrees C due to the change in the fracture mode from transgranular to intergranular, and then became almost constant up to 1,300 A degrees C. Two main flaw types as fracture origin were identified: small surface flaw and large pores. The volume fraction of the large pores was only 0.01%; however, they limited the strength on about 50% of the specimens. The fracture toughness decreased slightly up to 800 A degrees C controlled by the elastic modulus change, and then decreased significantly at 1,000 A degrees C due to the decrease in the grain-boundary toughness. Above 1,000 A degrees C, the fracture toughness increased significantly, and at 1,300 A degrees C, its value was close to that measured at room temperature.

Structural, mechanical and piezoelectric properties of polycrystalline AlN films sputtered on titanium bottom electrodes

Polycrystalline AlN coatings deposited on Ti-electrodes films were sputtered by using nitrogen both as reactive gas and sputtering gas, in order to obtain high purity coatings with appropriate properties to be further integrated into wear resistance coatings as a piezoelectric monitoring wear sensor. The chemical composition, the structure and the morphology of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy techniques. These measurements show the formation of highly (101), (102) and (103) oriented AlN films with good piezoelectric and mechanical properties suitable for applications in electronic devices. Through the use of lower nitrogen flow a densification of the AlN coating occurs in the microstructure, with an improvement of the crystallinity along with the increase of the hardness. Thermal stability of aluminum nitride coatings at high temperature was also examined. It was found an improvement of the piezoelectric properties of the highly (10x) oriented AlN films which became c-axis (002) oriented after annealing. The mechanical behavior after heat treatment shows an important enhancement of the surface hardness and Young’s modulus, which decrease rapidly with the increase of the indentation depth until approach constant values close to the substrate properties after annealing. Thus, thermal annealing energy promotes not only the rearrangement of Al–N network, but also the occurrence of a nitriding process of unsaturated Al atoms which cause a surface hardening of the film.

Influencia del nitruro de aluminio (AlN) en la microestructura y textura cristalográfica de laminaciones de uso eléctrico

El presente estudio se orienta a materiales de aplicación en la fabricación de motores y transformadores de potencias medias a bajas (laminaciones), abordando en el mismo los aspectos inherentes a la etapa de recocido descarburante realizado por el usuario. Dicho tratamiento térmico permite modificar el contenido de carbono original alcanzando niveles muy bajos (< 0,005%C). Además, se debe aumentar el tamaño de grano a valores óptimos para conseguir las mejores propiedades magnéticas: bajas pérdidas y alta permeabilidad. Este crecimiento de grano está fuertemente influido por las características morfológicas y por la cantidad de partículas de segunda fase precipitadas, de las cuales el nitruro de aluminio (AlN) es el principal inhibidor de crecimiento. Su control o la predicción de su influencia es el objetivo de los usuarios de laminaciones, para obtener un tamaño de grano adecuado. En consecuencia, este trabajo propone un estudio exhaustivo del comportamiento del AlN en el anclaje del borde de grano y en la formación de la textura cristalográfica, y la posibilidad de modelizar matemáticamente su influencia. El objetivo general de este trabajo es el estudio integral de la optimización del tratamiento térmico de los aceros eléctricos, para su aplicación por parte de las empresas usuarias de dichos materiales. Como objetivo específico, en este trabajo se propone la observación microscópica con microscopía de transmisión, de las partículas de NAl en aceros de bajo carbono de uso eléctrico, para inferir sobre su influencia en el crecimiento controlado del tamaño de grano y en la formación de textura. Se propone, además, intentar la modelización del anclaje de grano que producen los nitruros de aluminio.

Electronic structure and properties of AlN

The electronic structure of the wurtzite-type phase of aluminum nitride has been investigated by means of periodic ab initio Hartree-Fock calculations. The binding energy, lattice parameters (a,c), and the internal coordinate (u) have been calculated. All structural parameters are in excellent agreement with the experimental data. The electronic structure and bonding in AlN are analyzed by means of density-of-states projections and electron-density maps. The calculated values of the bulk modulus, its pressure derivative, the optical-phonon frequencies at the center of the Brillouin zone, and the full set of elastic constants are in good agreement with the experimental data.

Electronic structure and properties of AlN

The electronic structure of the wurtzite-type phase of aluminum nitride has been investigated by means of periodic ab initio Hartree-Fock calculations. The binding energy, lattice parameters (a,c), and the internal coordinate (u) have been calculated. All structural parameters are in excellent agreement with the experimental data. The electronic structure and bonding in AlN are analyzed by means of density-of-states projections and electron-density maps. The calculated values of the bulk modulus, its pressure derivative, the optical-phonon frequencies at the center of the Brillouin zone, and the full set of elastic constants are in good agreement with the experimental data.

Reseña de Carmen Alén Garabato / Xosé Afonso Álvarez / Mercedes Brea (dirs.) (2010): Quelle linguistique romane au XXIe siècle?. Paris: L"Harmattan, 294 p.

Con la perspectiva que se va abriendo del nuevo siglo tras el transcurso de su primera década, este volumen colectivo reúne un ramillete de contribuciones de distintos especialistas que muestran aspectos diversos de la lingüística románica, disciplina forjada en el xix y que, camino de dos centurias después, induce a los directores-coordinadores del libro en la página inicial de la Présentation a plantear las expectativas de su enseñanza futura en el marco de la ciencia y de la sociedad que vienen.

Alén Garabato, Carmen / Arnavielle, Teddy / Camps, Christian (dir.) (2009): La romanistique dans tous ses états. Paris: L'Harmattan. (Langue et parole)

En aquest volum es recullen les intervencions fetes en el col·loqui La Romanistique dans tous ses états, que tingué lloc a Béziers del 15 al 17 de maig de 2008. El col·loqui s"articulà al voltant de diverses temàtiques, que anaven des de la historiografia de la lingüística romànica fins a les propostes actuals de gestió lingüística (didàctica, protecció de llengües amenaçades), passant per altres temes; tot això, amb el denominador comú de la intenció de fer un estat de la lingüística romànica en un moment en què, si bé és cultivada en institucions diverses i en un esplet de congressos i altres trobades científiques, perd terreny en l"ensenyament universitari, on la perspectiva global i comparatista s"està abandonant.

Filmes nanométricos de FeN e ALN crescidos por sputtering e aplicações do efeito peltier

This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great technological interest to the high-density magnetic recording industry, the FeN system represents one of the most important magnetic achievements; however, diversity of the phases formed makes it difficult to control its magnetic properties during production of devices. We investigated the variation in these properties using ferromagnetic resonance, MOKE and atomic force microscopy (AFM), as a function of nitrogen concentration in the reactive gas mixture. Aluminum nitride, a component of widegap semiconductors and of considerable interest to the electronic and optoelectronic industry, was grown on nanometric thin film for the first time, with good structural quality by non-reactive rf sputtering of a pure AlN target at low power (≈ 50W). Another finding in this study is that a long deposition time for this material may lead to film contamination by materials adsorbed into deposition chamber walls. Energy-dispersive X-ray (EDX) analysis shows that the presence of magnetic contaminants from previous depositions results in grown AlN semiconductor films exhibiting magnetoresistance with high resistivity. The Peltier effect applied to commercially available compact refrigeration cells, which are efficient for cooling small volumes, was used to manufacture a technologically innovative refrigerated mini wine cooler, for which a patent was duly registered

Efeito do campo elétrico em nanocones formados por aln e BN: um estudo por primeiros princípios

The development of computers and algorithms capable of making increasingly accurate and rapid calculations as well as the theoretic foundation provided by quantum mechanics has turned computer simulation into a valuable research tool. The importance of such a tool is due to its success in describing the physical and chemical properties of materials. One way of modifying the electronic properties of a given material is by applying an electric field. These effects are interesting in nanocones because their stability and geometric structure make them promising candidates for electron emission devices. In our study we calculated the first principles based on the density functional theory as implemented in the SIESTA code. We investigated aluminum nitride (AlN), boron nitride (BN) and carbon (C), subjected to external parallel electric field, perpendicular to their main axis. We discuss stability in terms of formation energy, using the chemical potential approach. We also analyze the electronic properties of these nanocones and show that in some cases the perpendicular electric field provokes a greater gap reduction when compared to the parallel field

Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films

The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c-AlN) and amorphous hydrogenated silicon carbide (a-SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process.

AlN-based BAW resonators with CNT electrodes for gravimetric biosensing

Solidly mounted resonators (SMRs) with a top carbon nanotubes (CNTs) surface coating that doubles as an electrode and as a sensing layer have been fabricated. The influence of the CNTs on the frequency response of the resonators was studied by direct comparison to identical devices with a top metallic electrode. It was found that the CNTs introduced significantly less mass load on the resonators and these devices exhibited a greater quality factor, Q (>2000, compared to ∼1000 for devices with metal electrodes), which increases the gravimetric sensitivity of the devices by allowing the tracking of smaller frequency shifts. Protein solutions with different concentrations were loaded on the top of the resonators and their responses to mass-load from physically adsorbed coatings were investigated. Results show that resonators using CNTs as the top electrode exhibited a higher frequency change for a given load (∼0.25 MHz cm2 ng−1) compared to that of a metal thin film electrode (∼0.14 MHz cm2 ng−1), due to the lower mass of the CNTelectrodes and their higher active surface area compared to that of a thin film metal electrode. It is therefore concluded that the use of CNTelectrodes on resonators for their use as gravimetric biosensors is a significant improvement over metallic electrodes that are normally employed.

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.