999 resultados para Nd : YVO4


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报道了激光二极管泵浦Nd:YVO4晶体,Ⅱ临界相位匹配KTP晶体腔内倍频红光激光器,通过绎激光晶体热效应的考虑,设计了热不灵敏腔,最大获得了273W671nm红光输出。

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报道了激光二极管抽运Nd:YVO4晶体声光调Q的1342nm激光器,在重复频率为15kHz时,获得最大单脉冲能量为71μJ,脉宽为56ns,峰值功率为1.27kW,平均功率达到1.14W。利用二类非临界相位匹配的LBO晶体腔外倍频,得到约30mW的671nm激光输出。

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A diode stack end-pumped Nd:YVO4 slab laser at 1342 nm with near-diffraction-limited beam quality by using a hybrid resonator was presented. At a pump power of 139.5 W, laser power of 35.4 W was obtained with a conversion efficiency of 25.4% of the laser diode to laser output. The beam quality M-2 factors were measured to be 1.2 in the unstable direction and 1.3 in the stable direction at the output power of 29 W. (C) 2009 Optical Society of America

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A 32.1 W laser-diode-stack pumped acoustic-optic Q-switched Nd:YVO4 slab laser with hybrid resonator at 1064 nm was demonstrated with the pumping power of 112 W and repetition rate of 40 kHz, the pulse duration was 32.47 ns. The slope efficiency and optical-to-optical efficiency were 37 and 28.7%, respectively. At the repetition rate of 20 kHz and pumping power of 90 W, the average output power and pulse duration were 20.4 W and 20.43 ns, respectively. With the pumping power of 112 W, the beam quality M-2 factors in CW operation were measured to be 1.3 in stable direction and 1.6 in unstable direction.

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Fluorescence spectra of Nd: YVO4 under excitation of a continuous wave (CW) diode laser and a femtosecond laser at 800nm were investigated. It was found that Nd: YVO4 shows different upconversion and downconversion luminescencent behaviors when excited by the diode laser and the femtosecond laser. The dependence of the upconversion luminescence intensity on the pump power of the femtosecond laser was discussed. The populations of the upper energy levels for upconversion and downconversion luminescence were calculated based on the Bloch equations. The calculations agree well with the experimental results. (c) 2007 Optical Society of America.

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利用自制高功率激光二极管(LD)列阵堆和波导整形抽运耦合系统,将抽运光耦合至NdYVO4板条晶体,平平腔运转得到了1.064μm的偏振激光输出。在最大抽运功率为84W时,透过率为10%的输出腔镜得到了31W的激光功率输出,光一光效率37%,斜效率45%,板条晶体两个方向的输出光束质量差别较大。为了进一步提高光束质量,使用柱面镜混合腔结构,在最大抽运功率为86W时,得到了19.3W的1064nm激光输出,测得的非稳腔和稳腔两个方向的M^2因子分别为1.4和1.7。

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报道了全固态激光器连续抽运高重复率电光调Q的实验和理论分析结果。用LGS(La3Ga5SiO14)晶体作电光调Q元件,在激光二极管(LD)端面抽运NdYVO4激光器中实现了较高重复率的电光调Q输出。实验中在10^4Hz重复率下,抽运功率为28w时,平均功率超过5W,脉冲宽度为7ns,峰值功率为70kW,并对不同重复率时的脉冲输出进行了比较,在低重复率下,脉宽〈6.5ns,峰值功率超过100kW。在理论上,通过对连续抽运时的电光调Q速率方程进行修正,并考虑放大自发辐射(ASE)的影响,对调Q激光器的储能过

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We demonstrate, for the first time as far as Re known, a passively Q-switched operation of a Nd:YVO4 laser in which a Cr4+:YAG crystal and a laser-diode bar are used as the saturable absorber and the pump source, respectively. Stable laser pulses as short as 28 ns with 20-mu J energy can be generated with this laser, which has the advantages of simplicity, high efficiency, and good long-term stability. (C) 1997 Optical Society of America.

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We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.

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A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

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A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

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A diode-pumped passively mode-locked Nd YVO4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%. (C) 2008 Elsevier B.V. All rights reserved.