973 resultados para Nanoscale science and low-D systems


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The results of numerical simulations of nanometer precision distributions of microscopic ion fluxes in ion-assisted etching of nanoscale features on the surfaces of dielectric materials using a self-assembled monolayer of spherical nanoparticles as a mask are presented. It is shown that the ion fluxes to the substrate and nanosphere surfaces can be effectively controlled by the plasma parameters and the external bias applied to the substrate. By proper adjustment of these parameters, the ion flux can be focused onto the areas uncovered by the nanospheres. Under certain conditions, the ion flux distributions feature sophisticated hexagonal patterns, which may lead to very different nanofeature etching profiles. The results presented are generic and suggest viable ways to overcome some of the limitations of the existing plasma-assisted nanolithography.

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The structural transition of AIN nanocrystals and nanowires were investigated simultaneously under pressures up to 37.2 GPa by in situ angle dispersive high-pressure x-ray diffraction using synchrotron radiation source and a single diamond anvil cell. The size of hexagonal AIN nanocrystals and the diameter of nanowires are 45 nm on average. A pressure-induced wurtzite to rocksalt phase transition starts at 21.5 GPa and completes at 27.8 GPa for the nanocrystals and nanowires, respectively. The high-pressure behaviors of AlN nanocrystals the same as the AIN nanowires might arise from the similar size and diameter in nanocrystals and nanowires. Hexagonal AIN nanocrystals (45 nm) display an apparent volumetric contraction as compared to the AlN nanocrystals (10 nm) which might induce the difference of transition pressure.

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We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal–dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal–dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thickness of the layers and the dielectric permittivities of the constituent materials are met. We show that losses within the metallic layers can be substantially reduced by making the layers sufficiently thin. At the same time, a dramatic enlargement of the range of angles for oblique propagation of the new surface modes is observed. This can lead, however, to field non-locality and consequently to failure of the EM approximation.

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Long and straight β-SiC nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, graphite and silicon dioxide as the precursor. Detailed investigations with x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, Raman scattering spectroscopy, transmission electron microscopy and selected area electron diffraction confirm that the β-SiC nanowires, which are about 100–200 nm in stem diameter and 10–20 µm in length, consist of a solid single-crystalline core along the (1 1 1) direction wrapped with an amorphous SiOx layer. A broad photoluminescence emission peak with a maximum at about 336 nm is observed at room temperature. A direct current arc plasma-assisted self-catalytic vapour–liquid–solid process is proposed as the growth mechanism of the β-SiC nanowires. This synthesis technique is capable of producing SiC nanowires free of metal contamination with a preferential growth direction and a high aspect ratio, without the designed addition of transition metals as catalysts.

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Reforms to the national research and research training system by the Commonwealth Government of Australia sought to effectively connect research conducted in universities to Australia's national innovation system. Research training has a key role in ensuring an adequate supply of highly skilled people for the national innovation system. During their studies, research students produce and disseminate a massive amount of new knowledge. Prior to this study, there was no research that examined the contribution of research training to Australia's national innovation system despite the existence of policy initiatives aiming to enhance this contribution. Given Australia's below average (but improving) innovation performance compared to other OECD countries, the inclusion of Finland and the United States provided further insights into the key research question. This study examined three obvious ways that research training contributes to the national innovation systems in the three countries: the international mobility and migration of research students and graduates, knowledge production and distribution by research students, and the impact of research training as advanced human capital formation on economic growth. Findings have informed the concept of a research training culture of innovation that aims to enhance the contribution of research training to Australia's national innovation system. Key features include internationally competitive research and research training environments; research training programs that equip students with economically-relevant knowledge and the capabilities required by employers operating in knowledge-based economies; attractive research careers in different sectors; a national commitment to R&D as indicated by high levels of gross and business R&D expenditure; high private and social rates of return from research training; and the horizontal coordination of key organisations that create policy for, and/or invest in research training.

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The kinetics of saturation of Ni catalyst nanoparticle patterns of the three different degrees of order, used as a model for the growth of carbon nanotips on Si, is investigated numerically using a complex model that involves surface diffusion and ion motion equations. It is revealed that Ni catalyst patterns of different degrees of order, with Ni nanoparticle sizes up to 12.5 nm, exhibit different kinetics of saturation with carbon on the Si surface. It is shown that in the cases examined (surface coverage in the range of 1-50%, highly disordered Ni patterns) the relative pattern saturation factor calculated as the ratio of average incubation times for the processes conducted in the neutral and ionized gas environments reaches 14 and 3.4 for Ni nanoparticles of 2.5 and 12.5 nm, respectively. In the highly ordered Ni patterns, the relative pattern saturation factor reaches 3 for nanoparticles of 2.5 nm and 2.1 for nanoparticles of 12.5 nm. Thus, more simultaneous saturation of Ni catalyst nanoparticles of sizes in the range up to 12.5 nm, deposited on the Si substrate, can be achieved in the low-temperature plasma environment than with the neutral gas-based process.

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为研究风电并网对互联系统低频振荡的影响,基于完整的双馈风电机组模型,定性分析了两区域互联系统在风电机组并网前后阻尼特性的变化情况.从双馈风电机组并网输送距离、并网容量、互联系统联络线传送功率、是否加装电力系统稳定器等多个方面,多角度分析了风电场并网对互联系统小干扰稳定及低频振荡特性的影响.之后,以两个包括两个区域的电力系统为例,进行了系统的计算分析和比较.结果表明,有双馈风电机组接入的互联电力系统,在不同运行模式下,双馈风电机组的并网输送距离、出力水平、联络线传送功率对低频振荡模式的影响在趋势和程度上均有显著差异,这样在对风电场进行入网规划、设计和运行时就需要综合考虑这些因素的影响.

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In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled InAs/GaAs quantum dots (QDs) systems with low and high areal density, respectively. It was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. In particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (SQDs) to large quantum dots (LQDs). Such interplay effects could be explained by carrier population of SQDs relative to LQDs, which could be fitted well using a thermal carrier rate equation model. On the other hand, for the low density sample, an abnormal broadening of full width at half maximum (FWHM) was observed at the 15-100 K interval. In addition, the FWHM also broadened with increasing injection power at the whole measured temperature interval. Such peculiarities of low density QDs could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. The compared interplay effects of high-and low-density QDs reflect the difference between an interacting and isolated QDs system.

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We study the implications of the effectuation concept for socio-technical artifact design as part of the design science research (DSR) process in information systems (IS). Effectuation logic is the opposite of causal logic. Ef-fectuation does not focus on causes to achieve a particular effect, but on the possibilities that can be achieved with extant means and resources. Viewing so-cio-technical IS DSR through an effectuation lens highlights the possibility to design the future even without set goals. We suggest that effectuation may be a useful perspective for design in dynamic social contexts leading to a more dif-ferentiated view on the instantiation of mid-range artifacts for specific local ap-plication contexts. Design science researchers can draw on this paper’s conclu-sions to view their DSR projects through a fresh lens and to reexamine their re-search design and execution. The paper also offers avenues for future research to develop more concrete application possibilities of effectuation in socio-technical IS DSR and, thus, enrich the discourse.