20 resultados para Moke
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In questo lavoro di tesi è stata studiata l'anisotropia magnetica di film sottili epitassiali di La0.7Sr0.3MnO3 (LSMO), cresciuti con la tecnica Channel Spark Ablation su substrati monocristallini di SrTiO3 (001). L'interesse nei confronti di questi materiali nasce dal fatto che, grazie alla loro proprietà di half-metallicity, sono usati come iniettori di spin in dispositivi per applicazioni in spintronica, l'elettronica che considera elemento attivo per l'informazione non solo la carica elettrica ma anche lo spin dei portatori. Un tipico esempio di dispositivo spintronico è la valvola di spin (un dispositivo costituito da due film ferromagnetici metallici separati da uno strato conduttore o isolante) il cui stato resistivo dipende dall'orientazione relativa dei vettori magnetizzazione (parallela o antiparallela) degli strati ferromagnetici. E’ quindi di fondamentale importanza conoscere i meccanismi di magnetizzazione dei film che fungono da iniettori di spin. Questa indagine è stata effettuata misurando cicli di isteresi magnetica grazie ad un magnetometro MOKE (magneto-optical Kerr effect). Le misure di campo coercitivo e della magnetizzazione di rimanenza al variare dell'orientazione del campo rispetto al campione, permettono di identificare l'anisotropia, cioè gli assi di facile e difficile magnetizzazione. I risultati delle misure indicano una diversa anisotropia in funzione dello spessore del film: anisotropia biassiale (cioè con due assi facili di magnetizzazione) per film spessi 40 nm e uniassiale (un asse facile) per film spessi 20 nm. L'anisotropia biassiale viene associata allo strain che il substrato cristallino induce nel piano del film, mentre l'origine dell'uniassialità trova la giustificazione più probabile nella morfologia del substrato, in particolare nella presenza di terrazzamenti che potrebbero indurre una step-induced anisotropy. Il contributo di questi fattori di anisotropia alla magnetizzazione è stato studiato anche in temperatura.
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The understanding and control of anisotropy in Fe films grown on cubic systems such as GaAs and MgO has been of interest from the point of view of applications in devices. We report magnetic anisotropy studies on Fe/GaAs(001) and Fe/MgO/GaAs(001) prepared by pulsed laser deposition. In Fe/GaAs(001), magneto optical Kerr effect (MOKE) measurements revealed a dominant uniaxial anisotropy for Fe thickness less than 20 monolayers (ML) and this was confirmed by ferromagnetic resonance (FMR) studies. Multiple steps in the hysteresis loops were observed for Fe films of thickness 20 and 25 ML. Whereas, in Fe/MgO/GaAs(001), even at 25 ML of Fe, the uniaxial anisotropy remained dominant. The anisotropy constants obtained from FMR spectra have shown that the relative strength of uniaxial anisotropy is higher as compared to the cubic anisotropy constant in the case of Fe/MgO/GaAs(001). (C) 2011 American Institute of Physics. doi:10.1063/1.3556941]
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We report here the growth of epitaxial Co metal thin film on c-plane sapphire by pulsed laser deposition (RD) using Co:ZnO target utilizing the composition inhomogeneity of the corresponding plasma. Two distinct plasma composition regions have been observed using heavily alloyed Co0.6Zn0.4O target. The central and intense region of the plasma grows Co:ZnO film; the extreme tail grows only Co metal with no trace of either ZnO or Co oxide In between the two extremes, mixed phases (Co +Co-oxides +Co:ZnO) were observed. The Co metal thin film grown in this way shows room temperature ferromagnetism with large in plane magnetization similar to 1288 emu cm(-3) and a coerciviLy of similar to 230 Oe with applied field parallel to the film-substrate interface. Carrier density of the film is similar to 10(22) cm(-3). The film is epiLaxial single phase Co metal which is confirmed by both X-ray diffraction and transmission electron microscopy characierizaLions. Planar Hall Effect (PHE) and Magneto Optic Kerr Effect (MOKE) measurements confirm that the film possesses similar attributes of Co metal. The result shows that the epiLaxial Co metal thin film can be grown from its oxides in the PLD. (C) 2014 Elsevier B.V. All rights reserved.
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Las nanoestructuras han sido muy estudiadas debido a su importancia en aplicaciones tecnológicas y biomédicas, como por ejemplo el recubrimiento de los sensores y biosensores. Estas necesitan ser recubiertas para su protección y/o funcionalización. Un estudio sobre las superficies de nanopartículas magnéticas y esféricas (MNPs) de Fe y Ni reveló que el tolueno actúa como catalizador de reacciones de condensación de los componentes aromáticos formando estructuras gigantes, policíclicas e irregulares, creando así una especie de recubrimiento de carbono. También se ha estudiado la posibilidad de formar recubrimientos con carbono en películas de hierro y permalloy (FeNi) en tiempos largos de tratamiento de 1 año. En el presente trabajo, debido a los resultados anteriores para las películas delgadas de hierro, se ha estudiado el desarrollo del proceso de deposición del grafeno defectuoso a temperatura ambiente, sobre las superficies de las películas delgadas de hierro en periodos de entre unos días hasta medio año aproximadamente. Se ha hecho un estudio en función del tiempo de inmersión en tolueno de las propiedades estructurales y magnéticas de las películas de hierro depositadas sobre vidrio. Las películas de hierro han sido preparadas por el método de pulverización catódica y después sumergidas en tolueno. Las técnicas utilizadas para la caracterización estructural han sido, la difracción de Rayos-X, los estudios de microscopia electrónica de barrido (SEM) y la perfilómetría. La caracterización magnética se ha hecho con un magnetómetro de Kerr (MOKE) y un magnetómetro vibrante (VSM). Las muestras cristalizaban en el sistema cúbico FCC del grupo espacial Fm-3m, con parámetro de celda de 3.5922Ǻ. El tamaño de dominio coherente para los índices de Miller (110) ha ido aumentando a lo largo del tratamiento. Para el índice de Miller (211) el tamaño de dominio coherente ha disminuido. Este comportamiento se explica tendiendo en cuenta el modelo propuesto en la literatura científica del proceso de formación de las estructuras de grafeno defectuoso. El análisis de las imágenes de SEM y los correspondientes datos de la emisión de Rayos-X han confirmado la presencia del carbono en la superficie. La cantidad del carbono en la superficie de las películas de hierro aumenta con el incremento del tiempo de inmersión en tolueno. Ha sido posible detectar la presencia del carbono en la superficie después de 9 días de inmersión (por lo tanto, el proceso de las estructuras policíclicas e irregulares es relativamente rápido). La deposición del carbono no resulta en una formación de estructura uniforme, así que cuanto más largo es el tratamiento, más complicadas son las estructuras. Como resultado del tratamiento superficial durante aproximadamente medio año, se observa un aumento de rugosidad de un micrómetro aproximadamente. La diferencia entre las medidas de MOKE y VSM para el campo coercitivo y la remanencia, se explica teniendo en cuenta el proceso de oxidación de la superficie y la interacción de algunas partes de la película de hierro con el tolueno, que pueden causar la relajación de las tensiones. La imanación de saturación obtenida para las películas después del tiempo de tratamiento de 135 días es de 192 emu por gramo. La disminución de la imanación de saturación es debida a la oxidación de las películas por el contacto con la atmósfera y el tolueno. En un cálculo aproximado se ha llegado a la conclusión que dicha capa tiene un espesor de 50 nm, repartida en dos capas de 25 nm. De todo lo anterior y de la base de análisis de las propiedades estructurales y magnéticas de las películas delgadas de hierro sumergidas en tolueno para hacer el tratamiento superficial a temperatura ambiente, se concluye, que las estructuras policíclicas e irregulares de grafeno defectuoso se forman relativamente rápido. El tratamiento con el tolueno no causa muchos cambios en la estructura y en las propiedades magnéticas, se trata de procesos superficiales. La modificación in situ de películas de hierro en tolueno, puede ser candidato a método de protección y funcionalización de los sensores magnéticos.
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117 p.
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Rapport de recherche
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Im Rahmen dieser Arbeit wurden magnetische Zweischichtsysteme mit Exchange-Bias-Effekt und künstlichen lateralen Domänenstrukturen auf den Domänenwandwiderstand (DWR) untersucht. Die Erzeugung dieser Domänenmuster erfolgte über Ion Bombardment induced Magnetic Patterning (IBMP), d.h. 10 keV Helium-Ionenbeschuss durch Schattenmasken auf der Probenoberfläche. Mithilfe eines externen Magnetfelds können anschließend die Domänenwände gezielt ein- und ausgeschaltet werden. Zur Untersuchung des DWR-Effekts müssen einige physikalische Voraussetzungen erfüllt sein, wodurch die Herstellung und Charakterisierung entsprechender magnetischer Domänenstrukturen eine der Hauptaufgaben war. Die folgenden Themen werden in dieser Arbeit im Einzelnen behandelt: • Anwendung verschiedener Lithographie-Verfahren zur Erzeugung von Schattenmasken: Für die Verkleinerung der magnetischen Strukturen bis in den Sub-µm-Bereich waren neue Verfahren notwendig. Hierfür wurden die Interferenz- und die NanoImprint-Lithographie eingesetzt. Außerdem wurden Metallnetzchen als Schattenmasken für den Ionenbeschuss genutzt. • Charakterisierung der künstlichen Domänenmuster: Identifikation des Domänenwandtyps anhand von MFM-Messungen unter Zuhilfenahme mikromagnetischer Simulationen und Validierung der Ergebnisse mithilfe von PEEM-Messungen. Untersuchung der Domänenmuster auf die Domänenbreite und Domänenwandbreite in Abhängigkeit der verwendeten Strukturgrößen, Geometrien und Materialien. Magnetische Strukturierung von Exchange-Bias-Proben mit einem nicht-metallischen Antiferromagneten. • Domänenwandwiderstand: Untersuchung des DWR-Effekts in metallischen Exchange-Bias-Proben bei Raumtemperatur sowohl über viele als auch über einzelne Domänenwände sowie temperaturabhängig unterhalb der Raumtemperatur. Untersuchung des DWR-Effekts in oxidischen Zweilagenschichtsystemen bei Raumtemperatur über viele sowie über einzelne Domänenwände. Die Untersuchungen erfolgten mit Vibrationsmagnetometrie (VSM) und magnetooptischem Kerr-Effekt (MOKE), Rasterkraft-/Magnetokraft- und Rasterelektronenmikroskopie (AFM, MFM, REM), Photoemissions-Elektronenmikroskopie (PEEM) und Magnetotransportmessungen.
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We present a study of nanostructured magnetic multilayer systems in order to syn- thesize and analyze the properties of periodic and quasiperiodic structures. This work evolved from the deployment and improvement of the sputtering technique in our labora- tories, through development of a methodology to synthesize single crystal ultrathin Fe (100) films, to the final goal of growing periodic and quasiperiodic Fe/Cr multilayers and investi- gating bilinear and biquadratic exchange coupling between ferromagnetic layer dependence for each generation. Initially we systematically studied the related effects between deposition parameters and the magnetic properties of ultrathin Fe films, grown by DC magnetron sput- tering on MgO(100) substrates. We modified deposition temperature and film thickness, in order to improve production and reproduction of nanostructured monocrystalline Fe films. For this set of samples we measured MOKE, FMR, AFM and XPS, with the aim of investi- gating their magnocrystalline and structural properties. From the magnetic viewpoint, the MOKE and FMR results showed an increase in magnetocrystalline anisotropy due to in- creased temperature. AFM measurements provided information about thickness and surface roughness, whereas XPS results were used to analyze film purity. The best set of parame- ters was used in the next stage: investigation of the structural effect on magnetic multilayer properties. In this stage multilayers composed of interspersed Fe and Cr films are deposited, following the Fibonacci periodic and quasiperiodic growth sequence on MgO (100) substrates. The behavior of MOKE and FMR curves exhibit bilinear and biquadratic exchange coupling between the ferromagnetic layers. By computationally adjusting magnetization curves, it was possible to determine the nature and intensity of the interaction between adjacent Fe layers. After finding the global minimum of magnetic energy, we used the equilibrium an- gles to obtain magnetization and magnetoresistance curves. The results observed over the course of this study demonstrate the efficiency and versatility of the sputtering technique in the synthesis of ultrathin films and high-quality multilayers. This allows the deposition of magnetic nanostructures with well-defined magnetization and magnetoresistance parameters and possible technological applications
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This study will show the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3). Of great technological interest to the high-density magnetic recording industry, the FeN system represents one of the most important magnetic achievements; however, diversity of the phases formed makes it difficult to control its magnetic properties during production of devices. We investigated the variation in these properties using ferromagnetic resonance, MOKE and atomic force microscopy (AFM), as a function of nitrogen concentration in the reactive gas mixture. Aluminum nitride, a component of widegap semiconductors and of considerable interest to the electronic and optoelectronic industry, was grown on nanometric thin film for the first time, with good structural quality by non-reactive rf sputtering of a pure AlN target at low power (≈ 50W). Another finding in this study is that a long deposition time for this material may lead to film contamination by materials adsorbed into deposition chamber walls. Energy-dispersive X-ray (EDX) analysis shows that the presence of magnetic contaminants from previous depositions results in grown AlN semiconductor films exhibiting magnetoresistance with high resistivity. The Peltier effect applied to commercially available compact refrigeration cells, which are efficient for cooling small volumes, was used to manufacture a technologically innovative refrigerated mini wine cooler, for which a patent was duly registered
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In this work, we investigated the magnetic properties of a monocrystalline Fe thin film and of Fe(80 Å)/Cr(t)/Fe(80 Å) tri-layers, with the nonmagnetic metallic Cr spacer layer thickness varying between 9 Å < t < 40 Å. The samples were deposited by the DC Sputtering on Magnesium Oxide (MgO) substrates, with (100) crystal orientation. For this investigation, experimental magneto-optical Kerr effect (MOKE) magnetometry and ferromagnetic resonance (FMR) techniques were employeed. In this case, these techniques allowed us to study the static and dynamical magnetization properties of our tri-layers. The experimental results were interpreted based on the phenomenological model that takes into account the relevant energy terms to the magnetic free energy to describe the system behavior. In the case of the monocrystalline Fe film, we performed an analytical discussion on the magnetization curves and developed a numerical simulation based on the Stoner-Wohlfarth model, that enables the numerical adjustment of the experimental magnetization curves and obtainment of the anisotropy field values. On the other hand, for the tri-layers, we analyzed the existence of bilinear and biquadratic couplings between the magnetizations of adjacent ferromagnetic layers from measurements of magnetization curves. With the FMR fields and line width angular dependencies, information on the anisotropy in three layers was obtained and the effects of different magnetic relaxation mechanisms were evidenced. It was also possible to observe the dependence of the epitaxy of the multilayers with growth and sputtering parameters. Additionally it was developed the technique of AC magnetic susceptibility in order to obtain further information during the investigation of magnetic thin films
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The research behind this master dissertation started with the installation of a DC sputtering system, from its first stage, the adaptation of a refrigerating system, passing by the introduction of a heating system for the chamber using a thermal belt, until the deposition of a series of Fe/MgO(100) single crystal nanometric film samples. The deposition rates of some materials such as Fe, Py and Cu were investigated through an Atomic Force Microscope (AFM). For the single crystal samples, five of them have the same growth parameters and a thickness of 250Å, except for the temperature, which varies from fifty degrees from one to another, from 100ºC to 300ºC. Three other samples also have the same deposition parameters and a temperature of 300ºC, but with thickness of 62,5Å, 150Å, and 250Å. Magneto-optical Kerr Effect (MOKE) of the magnetic curves measurements and Ferromagnetic Resonance (FMR) were made to in order to study the influence of the temperature and thickness on the sample s magnetic properties. In the present dissertation we discuss such techniques, and the experimental results are interpreted using phenomenological models, by simulation, and discussed from a physical point of view, taking into account the system s free magnetic energy terms. The results show the growth of the cubic anisotropy field (Hac) as the sample s deposition temperature increases, presenting an asymptotic behavior, similar to the characteristic charging curve of a capacitor in a RC circuit. A similar behavior was also observed for the Hac due to the increase in the samples thicknesses. The 250˚A sample, growth at 300°C, presented a Hac field close to the Fe bulk value
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In this work we have developed a way to grow Fe/MgO(100) monocrystals by magnetron sputtering DC. We investigated the growing in a temperature range among 100 oC and 300 oC. Structural and magneto-crystalline properties were studied by different experimental techniques. Thickness and surface roughness of the films were investigated by atomic force microscopy, while magneto-crystalline properties were investigated by magneto-optical Kerr effect and ferromagnetic resonance. Our results show that as we increase the deposition temperature, the magneto-crystalline anisotropy of the films also increases, following the equation of Avrami. The best temperature value to make a film is 300 oC. As the main result, we built a base of magnetoresistence devices and as an aplication, we present measurements of Fe/Cr/Fe trilayer coupling. In a second work we investigated the temperature dependence of the first three interlayer spacings of Ag(100) surface using low energy electron diffraction. A linear expansion model of crystal surface was used and the values of Debye temperatures of the first two layers and thermal expansion coefficient were determinated. A relaxation of 1% was found for Ag(100) surface and these results are matched with faces (110) and (111) of the silver. iv
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Durch das Anlegen eines elektrischen Feldes an eine Feldeffektanordung kann die Anzahl der freien Ladungstraeger im Kanalmaterial direkt moduliert und der Einfluá auf die Transporteigenschaften und den damit zusammenhaengenden typischen Energieskalen untersucht werden. Mit der Konzeption und dem Aufbau einer Praeparationsapparatur, sowie der Etablierung eines Praeparationsprozesses zur Herstellung duenner epitaktischer Schichten des Kondo-Halbmetalls CeSb sollte im Rahmen dieser Arbeit der Grundstein fuer die Realisierung einer dazu notwendigen Feldeffektanordnung gelegt werden. Mit dem Verfahren der Molekularstrahlepitaxie konnten sowohl (100)- als auch (111)-orientierte phasenreine CeSb-Schichten hergestellt werden. In Abhaengigkeit der Sb-Verdampfertemperatur wurden fuer das Schichtwachstum auf Saphir (1120) zwei voneinander getrennte Bereiche der Phasenbildung gefunden, in denen jeweils die (111)- respektive die (100)-Wachstumsrichtung dominiert. Das beobachtete Re-Entrance-Verhalten beruht auf dem Einfluss der Sb-Tiegeltemperatur auf Verdampfungsrate und Strahlzusammensetzung. Durch die Verwendung von Saphir (0001)-Substraten konnte das Wachstum (111)-orientierter Schichten massgeblich verbessert werden. Die Untersuchung der elektronischen Eigenschaften mittels Magnetotransportmessungen ergab eine weitreichende bereinstimmung mit den bekannten Einkristallergebnissen. In Uebereinstimmung mit den Ergebnissen der an der ETH Zuerich durchgefuehrten MOKE-Untersuchungen laesst sich aus den Hallmessungen auf eine Reduktion der freien Ladungstraeger in den duennen Schichten schliessen.