Stable and metastable ferroelectric polarization analyzed by the ramp voltage technique

The study of the stable and the metastable ferroelectric polarization of poly(vinylidene fluoride), PVDF, was performed using two successive equal sign ramp voltages, mediated by a short-circuit period. Rates from 10 V/s up to 0.7 MV/s were used. Results showed that they follow different formation kinetics; that the stable part decreases for higher ramp voltage rates and its apparent coercive field increases.

Interplay between proton ordering and ferroelectric polarization in H-bonded KDP-type crystals

The origin of ferroelectricity in KH2PO4 (KDP) is studied by first-principles electronic structure calculations. In the low-temperature phase, the collective off-centre ordering of the protons is accompanied by an electronic charge delocalization from the near and localization at the far oxygen within the O-H...O bonds. Electrostatic forces. then, push the K+ ions towards off-centre positions, and induce a macroscopic polarization. The analysis of the correlation between different geometrical and electronic quantities, in connection with experimental data. supports the idea that the role of tunnelling in isotopic effects is irrelevant. Instead, geometrical quantum effects appear to play a central role. (C) 2001 Elsevier Science B.V. All rights reserved.

Switching transients in ferroelectric dicalcium strontium propionate (DSP) and Azoxybenzene

The ferroelectric polarization switching was studied in DSP single crystal and Azoxybenzene liquid film using the method described by Merz (1954). The DSP single crystal samples were in the form of plates 0.5 mm - 1.0 mm thick. The Azoxybenzene liquid film samples had a thickness from 0.025 mm - 0.125 mm. Switching in DSP was observed in the temperature range +7°C to -30°C, while in Azoxybenzene it was observed from 30°C to 70°C.

Polarization enhancement in compositionally graded vanadium doped bismuth titanate thin films

Compositionally up and downgraded Bi4-x/3Ti3-xVxO12 (x=0.0, 0.012,0.03, 0.06) thin films were grown on Pt coated silicon substrates by pulsed laser deposition technique. Downgraded fabrication showed improved ferroelectric polarization in comparison to upgraded fabrication. Films deposited at 650 and 700 degrees C showed very large remnant polarization (2P(r)) value of 82 mu C cm(-2), which is comparatively large among all bismuth based thin films reported so far. A mechanism based on vanadium enrich seeded layer formation in the downgraded structure is proposed for the improvement. Moreover, frequency independent behavior (100Hz-5kHz) of the graded films ensures its potential application for various microelectronic devices. (c) 2010 American Institute of Physics. [doi :10.1063/1.3431543].

Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO3 films

The influence of both compressive and tensile epitaxial strain along with the electrical boundary conditions on the ferroelastic and ferroelectric domain patterns of bismuth ferrite films was studied. BiFeO3 films were grown on SrTiO3(001), DyScO3(110), GdScO3(110), and SmScO3(110) substrates to investigate the effect of room temperature in-plane strain ranging from -1.4% to +0.75%. Piezoresponse force microscopy, transmission electron microscopy, x-ray diffraction measurements, and ferroelectric polarization measurements were performed to study the properties of the films. We show that BiFeO3 films with and without SrRuO3 bottom electrode have different growth mechanisms and that in both cases reduction of the domain variants is possible. Without SrRuO3, stripe domains with reduced variants are formed on all rare earth scandate substrates because of their monoclinic symmetry. In addition, tensile strained films exhibit a rotation of the unit cell with increasing film thickness. On the other side, the presence of SrRuO3 promotes step flow growth of BiFeO3. In case of vicinal SrTiO3 and DyScO3 substrates with high quality SrRuO3 bottom electrode and a low miscut angle of approximate to 0.15 degrees we observed suppression of the formation of certain domain variants. The quite large in-plane misfit of SrRuO3 with GdScO3 and SmScO3 prevents the growth of high quality SrRuO3 films and subsequent domain variants reduction in BiFeO3 on these substrates, when SrRuO3 is used as a bottom electrode.

The use of pulsed electric acoustic technique for measuring electric field profiles in ferroelectric ceramic

The pulsed electric acoustic technique, PEA, have been usually applied to probe space charge profiles in polymers. In this work we show preliminary results obtained with lead zirconate-titanate and niobium, PZTN, ferroelectric ceramic samples. Experiments showed that induced charge densities on sample electrodes are mainly due to the ferroelectric polarization of the sample. We present results of the typical PEA response and the procedure to deconvolute the signal in order to obtain the charge densities and the electric field profiles. The PEA setup allows us to show a non-uniform polarization during ferroelectric switching.

Magnetic field-induced ferroelectric switching in multiferroic aurivillius phase thin films at room temperature

Single-phase multiferroic materials are of considerable interest for future memory and sensing applications. Thin films of Aurivillius phase Bi 7Ti3Fe3O21 and Bi6Ti 2.8Fe1.52Mn0.68O18 (possessing six and five perovskite units per half-cell, respectively) have been prepared by chemical solution deposition on c-plane sapphire. Superconducting quantum interference device magnetometry reveal Bi7Ti3Fe 3O21 to be antiferromagnetic (TN = 190 K) and weakly ferromagnetic below 35 K, however, Bi6Ti2.8Fe 1.52Mn0.68O18 gives a distinct room-temperature in-plane ferromagnetic signature (Ms = 0.74 emu/g, μ0Hc =7 mT). Microstructural analysis, coupled with the use of a statistical analysis of the data, allows us to conclude that ferromagnetism does not originate from second phase inclusions, with a confidence level of 99.5%. Piezoresponse force microscopy (PFM) demonstrates room-temperature ferroelectricity in both films, whereas PFM observations on Bi6Ti2.8Fe1.52Mn0.68O18 show Aurivillius grains undergo ferroelectric domain polarization switching induced by an applied magnetic field. Here, we show for the first time that Bi6Ti2.8Fe1.52Mn0.68O18 thin films are both ferroelectric and ferromagnetic and, demonstrate magnetic field-induced switching of ferroelectric polarization in individual Aurivillius phase grains at room temperature.

Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 epitaxial bilayered heterostructures

Epitaxial bilayered thin films consisting of La0.6Sr0.4MnO3 (LSMO) and 0.7Pb(Mg1/3Nb2/3)O3â0.3PbTiO3 (PMN-PT) layers of relatively different thicknesses were fabricated on LaNiO3 coated LaAlO3 (100) single crystal substrates by pulsed laser ablation technique. The crystallinity, ferroelectric, ferromagnetic, and magnetodielectric properties have been studied for all the bilayered heterostructures. Their microstructural analysis suggested possible StranskiâKrastanov type of growth mechanism in the present case. Ferroelectric and ferromagnetic characteristics of these bilayered heterostructures over a wide range of temperatures confirmed their biferroic nature. The magnetization and ferroelectric polarization of the bilayered heterostructures were enhanced with increasing PMN-PT layer thickness owing to the effect of lattice strain. In addition, evolution of the ferroelectric and ferromagnetic properties of these heterostructures with changing thicknesses of the PMN-PT and LSMO layers indicated possible influence of several interfacial effects such as space charge, depolarization field, domain wall pinning, and spin disorder on the observed properties. Dielectric properties of these heterostructures studied over a wide range of temperatures under different magnetic field strengths suggested a possible role of elastic strain mediated magnetoelectric coupling behind the observed magnetodielectric effect in addition to the influence of rearrangement of the interfacial charge carriers under an applied magnetic field.

Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti/SiO2/Si substrate

Highly (110) preferred orientated antiferroelectric PbZrO3 (PZ) and La-modified PZ thin films have been fabricated on Pt/Ti/SiO2/Si substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The Tc has been observed to decrease by ∼ 17 °C per 1 mol % of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193 kV/cm at 80 °C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an ABO3 perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2 mol % La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10 kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

Electric measurements with constant current: A practical method for characterizing dielectric films

This article assesses the use of the constant current (CC) method for characterizing dielectric films. The method is based on charging the sample with a constant current (current stress) and measuring the corresponding voltage rise under the closed circuit condition. Our article shows that the CC method is an alternative to the constant voltage stressing method to study the electric properties of nonpolar, ferroelectric, and polar polymers. The method was tested by determining the dielectric constant of polytetrafluoroethylene, and investigating the electric conduction in poly(ethylene terephthalate). For the ferroelectric polymer poly(vinylidene fluoride), it is shown that hysteresis loops and the dependence of the ferroelectric polarization on the electric field can be obtained. (C) 2001 American Institute of Physics.

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Synthesis and Characterization of Nanostructured Electro-active Materials

Thesis (Ph.D.)--University of Washington, 2016-08

Neutron Scattering Studies on Complex Magnetic Structures in Magnetoelectric Materials

In this thesis, the magnetic properties of four transition-metal oxides are presented. Their multiferroic and magnetoelectric phases have been investigated by means of different neutron scattering techniques. The materials TbMnO3 and MnWO4 belong to the group of spin-induced multiferroics. Their ferroelectric polarization can be explained by the inverse DzyaloshinskiiMoriya interaction. Another common feature of both materials is the presence of subsequent magnetic transitions from a spin-density wave to a spin spiral. The features of the phase transitions have been studied in both materials and it could be shown that diffuse magnetic scattering from the spin spiral is present even in the ordered spin-density wave phase. The excitation spectrum in the multiferroic phase of TbMnO3 was investigated in detail and a comprehensive dataset was obtained using time-of-flight spectroscopy. A spin-wave model could be obtained which can quantitatively describe the full dispersion. Furthermore, the polarization of the zone-center excitations could be derived which fit well to data from inelastic neutron spectroscopy and infrared spectroscopy. With the combination of spherical neutron polarimetry and a poling of the sample by an electric field, it was possible to observe the chiral magnetic component of the magnetic excitations in TbMnO3 and MnWO4. The spin-wave model for TbMnO3 obtained in this thesis is able to correctly describe the dispersion of this component. The double tungstate NaFe(WO4)2 is isostructural to the multiferroic MnWO4 and develops a complex magnetic phase diagram. By the use of neutron diffraction techniques, the zero-field structure and high-field structures in magnetic field applied along the b-axis could be determined. The data reveal a direct transition into an incommensurate spin-spiral structure. The value of the incommensurability is driven by anharmonic modulations and shows strong hysteresis effects. The static and dynamic properties in the magnetoelectric spin-glass phase of Ni0.42Mn0.58TiO3 were studied in detail. The spin-glass phase is composed of short-ranged MnTiO3 and NiTiO3-type order. The antiferromagnetic domains could be controlled by crossed magnetic and electric fields, which was visualized using spherical neutron polarimetry. A comprehensive dataset of the magnetic excitations in the spin-glass phase was collected. The dataset revealed correlations in the hexagonal plane which are only weakly coupled along the c-axis. The excitation spectra could be simulated by taking into account the MnTiO3-type order.