782 resultados para Manganiti, anisotropia magnetica, MOKE, spintronica, LSMO, half-metal


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In questo lavoro di tesi è stata studiata l'anisotropia magnetica di film sottili epitassiali di La0.7Sr0.3MnO3 (LSMO), cresciuti con la tecnica Channel Spark Ablation su substrati monocristallini di SrTiO3 (001). L'interesse nei confronti di questi materiali nasce dal fatto che, grazie alla loro proprietà di half-metallicity, sono usati come iniettori di spin in dispositivi per applicazioni in spintronica, l'elettronica che considera elemento attivo per l'informazione non solo la carica elettrica ma anche lo spin dei portatori. Un tipico esempio di dispositivo spintronico è la valvola di spin (un dispositivo costituito da due film ferromagnetici metallici separati da uno strato conduttore o isolante) il cui stato resistivo dipende dall'orientazione relativa dei vettori magnetizzazione (parallela o antiparallela) degli strati ferromagnetici. E’ quindi di fondamentale importanza conoscere i meccanismi di magnetizzazione dei film che fungono da iniettori di spin. Questa indagine è stata effettuata misurando cicli di isteresi magnetica grazie ad un magnetometro MOKE (magneto-optical Kerr effect). Le misure di campo coercitivo e della magnetizzazione di rimanenza al variare dell'orientazione del campo rispetto al campione, permettono di identificare l'anisotropia, cioè gli assi di facile e difficile magnetizzazione. I risultati delle misure indicano una diversa anisotropia in funzione dello spessore del film: anisotropia biassiale (cioè con due assi facili di magnetizzazione) per film spessi 40 nm e uniassiale (un asse facile) per film spessi 20 nm. L'anisotropia biassiale viene associata allo strain che il substrato cristallino induce nel piano del film, mentre l'origine dell'uniassialità trova la giustificazione più probabile nella morfologia del substrato, in particolare nella presenza di terrazzamenti che potrebbero indurre una step-induced anisotropy. Il contributo di questi fattori di anisotropia alla magnetizzazione è stato studiato anche in temperatura.

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L’anisotropia magnetica di film sottili ferromagnetici è un parametro fondamentale nel campo della spintronica. Recenti lavori hanno dimostrato che la formazione di un’interfaccia tra film sottili ferromagnetici e materiali organici è in grado di modificare, l’anisotropia magnetica del costituente inorganico. Questa specifica interfaccia è stata definita spinterface ed è di grande interesse in un’ottica di ingegnerizzazione delle proprietà magnetiche di dispositivi spintronici. Pertanto, in questo lavoro di tesi ho analizzato l’anisotropia magnetica di un film policristallino di Cobalto ricoperto da una molecola organica largamente utilizzata in dispositivi spintronici e optoelettronici, la Gallio-chinolina (Gaq3), con l’obiettivo di verificare il ruolo della molecola nella definizione delle proprietà magnetiche dello strato di Cobalto. Per valutare l’impatto della formazione di spinterface, ho confrontato i risultati sperimentali con quelli ottenuti per un bistrato di riferimento Cobalto/Alluminio (Co/Al). Per comprendere i risultati sperimentali introdurrò nel primo capitolo i concetti fondamentali del magnetismo di film sottili, in particolare i vari contributi di anisotropia magnetica, il concetto di dominio magnetico e il modello di Stoner Wohlfarth. Il secondo capitolo verrà dedicato alla descrizione del concetto di spinterface e come questa interfaccia possa modificare le proprietà magnetiche dei film sottili. Nel terzo capitolo verranno descritte le tecniche di deposizione in Ultra Alto Vuoto con cui sono stati realizzati i bistrati Co/Gaq3 e Co/Al mentre nel quarto capitolo descriver`o il funzionamento del magnetometro MOKE, lo strumento con cui ho studiato l’anisotropia magnetica dei campioni prodotti. I dati sperimentali e la loro discussione saranno presentati nel quinto capitolo dove ho verificato la presenza di effetti di spinterface attraverso l’osservazione di un aumento della coercitività del campione Co/Gaq3.

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Neste trabalho realizamos um estudo de um buraco em um antiferromagneto, como parte de uma revisão de diferentes técnicas de abordagem das fases de “stripes” nos cupratos supercondutores. Estudamos a transição do formalismo de “strings” para um buraco no modelo t - Jz bidimensional, onde existe uma solução analítica, para a solução de pólaron de spin no modelo t - J isotrópico através da aproximação de Born auto-consistente. A forma funcional dos picos de quase-partícula, do peso espectral e do “gap” espectral foi investigada numericamente em detalhe, em função da anisotropia magnética. O movimento de um pólaron de spin na presença de uma parede de domínio antiferromagnética (ADW) em antifase, como uma realização da configuração de “stripes” nos planos CuO dos cupratos de baixa dopagem, também foi analisada.

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Neste trabalho é apresentado um estudo sobre a dinâmica de paredes de domínios através de medidas de impedanciometria. É proposto um método que permite a obtenção dos seguintes parâmetros das amostras estudadas: mobilidade e velocidade crítica das paredes, largura dos domínios e de suas paredes, densidade de energia de parede e constante efetiva de troca. Todas essas informações são obtidas a partir do espectro em freqüência da permeabilidade e de relações apropriadas entre a permeabilidade e a impedância complexa. O elo de ligação entre essas quantidades é feita através do efeito da profundidade de penetração, cuja definição inclui a freqüência, a resistividade e a permeabilidade do material. O método foi aplicado ao estudo de dois tipos diferentes de materiais, (i) (110)[001]FeSi3%, policristalino e altamente texturizado com tamanho de grãos bastante grande (~ 5 mm) e (ii) amostras nanocristalinas obtidas através do recozimento de fitas amorfas de Fe73.5Cu1Nb3Si16.5B6. Enquanto o primeiro sistema foi utilizado para se fazer uma comparação entre os parâmetros aqui obtidos com aqueles de outros autores e técnicas, o segundo foi estudado em termos das modificações da anisotropia magnética associadas ao alívio das tensões internas com a temperatura de recozimento.

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O crescimento de lmes nos ferromagnéticos sobre uma superfícies vicinal induz uma anisotropia uniaxial que atua juntamente com a anisotropia magnetocrislanina. Neste estudo, lmes nos de Co foram depositados sobre Si(111) para investigar o papel dessa anisotropia nas propriedades magnéticas do lme. Os substratos foram preparados quimicamente via uma solução de NH4F e caracterizados via microscopia de força atômica. Os lmes, depositados via desbaste iônico, foram caracterizados estruturalmente via difratometria de raio-x e microscopia de tunelamento. As propriedades magnéticas foram determinadas via magnetometria a efeito Kerr magnetoóptico, onde observou-se a presen ça de uma anisotropia uniaxial dominante. Um modelo fenomelógico de reversão da magnetização via rotação coerente foi aplicado para ajustar as curvas de histerese, e as constantes de anisotropia uniaxial para cada espessura foram determinadas.

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We present ab-initio calculations of seven digital magnetic heterostructures, GaN delta-doped with V, Cr, Mn, Fe, Co, Ni, and Cu, forming two-dimensional systems. Only GaN delta-doped with V or Cr present a ferromagnetic ground state with high Curie temperatures. For both, to better describe the electronic properties, we used the GGA-1/2 approach. The ground state of GaN/Cr resulted in a two dimensional half-metal, with 100% spin polarization. For GaN/V, we obtained an insulating state: integer magnetic moment of 2.0 mu(B), a minority spin gap of 3.0 eV close to the gap of GaN, but a majority spin gap of 0.34 eV. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751285]

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In dieser Arbeit werden vier unterschiedliche, stark korrelierte, fermionische Mehrbandsysteme untersucht. Es handelt sich dabei um ein Mehrstörstellen-Anderson-Modell, zwei Hubbard-Modelle sowie ein Mehrbandsystem, wie es sich aus einer ab initio-Beschreibung für ein korreliertes Halbmetall ergibt.rnrnDie Betrachtung des Mehrstörstellen-Anderson-Modells konzentriert sich auf die Untersuchung des Einflusses der Austauschwechselwirkung und der nicht-lokalen Korrelationen zwischen zwei Störstellen in einem einfach-kubischen Gitter. Das zentrale Resultat ist die Abstandsabhängigkeit der Korrelationen der Störstellenelektronen, welche stark von der Gitterdimension und der relativen Position der Störstellen abhängen. Bemerkenswert ist hier die lange Reichweite der Korrelationen in der Diagonalrichtung des Gitters. Außerdem ergibt sich, dass eine antiferromagnetische Austauschwechselwirkung ein Singulett zwischen den Störstellenelektronen gegenüber den Kondo-Singuletts der einzelnen Störstellen favorisiert und so den Kondo-Effekt der einzelnen Störstellen behindert.rnrnEin Zweiband-Hubbard-Modell, das Jz-Modell, wird im Hinblick auf seine Mott-Phasen in Abhängigkeit von Dotierung und Kristallfeldaufspaltung auf dem Bethe-Gitter untersucht. Die Entartung der Bänder ist durch eine unterschiedliche Bandbreite aufgehoben. Wichtigstes Ergebnis sind die Phasendiagramme in Bezug auf Wechselwirkung, Gesamtfüllung und Kristallfeldparameter. Im Vergleich zu Einbandmodellen kommen im Jz-Modell sogenannte orbital-selektive Mott-Phasen hinzu, die, abhängig von Wechselwirkung, Gesamtfüllung und Kristallfeldparameter, einerseits metallischen und andererseits isolierenden Charakter haben. Ein neuer Aspekt ergibt sich durch den Kristallfeldparameter, der die ionischen Einteilchenniveaus relativ zueinander verschiebt, und für bestimmte Werte eine orbital-selektive Mott-Phase des breiten Bands ermöglicht. Im Vergleich mit analytischen Näherungslösungen und Einbandmodellen lassen sich generische Vielteilchen- und Korrelationseffekte von typischen Mehrband- und Einteilcheneffekten differenzieren.rnrnDas zweite untersuchte Hubbard-Modell beschreibt eine magneto-optische Falle mit einer endlichen Anzahl Gitterplätze, in welcher fermionische Atome platziert sind. Es wird eine z-antiferromagnetische Phase unter Berücksichtigung nicht-lokaler Vielteilchenkorrelationen erhalten, und dabei werden bekannte Ergebnisse einer effektiven Einteilchenbeschreibung verbessert.rnrnDas korrelierte Halbmetall wird im Rahmen einer Mehrbandrechnung im Hinblick auf Korrelationseffekte untersucht. Ausgangspunkt ist eine ab initio-Beschreibung durch die Dichtefunktionaltheorie (DFT), welche dann durch die Hinzunahme lokaler Korrelationen ergänzt wird. Die Vielteilcheneffekte werden an Hand einer einfachen Wechselwirkungsnäherung verdeutlicht, und für ein Wechselwirkungsmodell in sphärischer Symmetrie präzisiert. Es ergibt sich nur eine schwache Quasiteilchenrenormierung. Besonders für röntgenspektroskopische Experimente wird eine gute Übereinstimmung erzielt.rnrnDie numerischen Ergebnisse für das Jz-Modell basieren auf Quanten-Monte-Carlo-Simulationen im Rahmen der dynamischen Molekularfeldtheorie (DMFT). Für alle anderen Systeme wird ein Mehrband-Algorithmus entwickelt und implementiert, welcher explizit nicht-diagonale Mehrbandprozesse berücksichtigt.rnrn

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Ziel dieser Arbeit ist die Bestimmung der Spinpolarisation von der Heusler-Verbindung Co2Cr0,6Fe0,4Al. Dieses Ziel wurde durch die sorgfältige Präparation von Co2Cr0,6Fe0,4Al basierten Tunnelkontakten realisiert. Tunnelwiderstandsmessungen an Co2Cr0,6Fe0,4Al-basiertenrnTunnelkontakten ergaben einen Tunnelmagnetowiderstand von 101% bei 4 K. DieserrnTunnelmagnetowiderstand legt eine untere Grenze von 67% für die Spinpolarisation von Co2Cr0,6Fe0,4Al fest.rnrnCo2Cr0,6Fe0,4Al ist eine Heusler-Verbindung, der die Eigenschaften eines halbmetallischen Ferromagneten zugeschrieben werden. Ein halbmetallischer Ferromagnet hat an der Fermikante nur Elektronenspinzustände mit einer Polarisation. Als Folge davon können bei einem spinerhaltenden Tunnelprozess nur Elektronen einer Spinrichtung in den halbmetallischen Ferromagneten tunneln. Mit einem magnetischen Feld und einer durch einen Antiferromagneten fixierten Gegenelektrode, können an einem Tunnelkontakt mit einem spinpolarisierten Ferromagneten deshalb zwei Zustände, eine hohe und eine niedrige Tunnelleitfähigkeit, erzeugt werden. Daher finden spinpolarisierte Tunnelkontakte in Form von MRAM in der Datenspeicherung Verwendung. Bislang wurde jedoch keine Verbindung gefunden, der eine Spinpolarisation von 100% experimentell eindeutig nachgewiesen werden konnte. Für Co2Cr0,6Fe0,4Al lagen die höchsten gemessenen Spinpolarisationen um 50%.rnrnTunnelspektroskopie ist eine zuverlässige und anwendungsnahe Methode zur Untersuchung der Spinpolarisation. Inelastische Tunnelprozesse und eine reduzierte Ordnung an Grenzflächen bewirken einen reduzierten Tunnelmagnetowiderstand. Eine symmetriebrechende Barriere, wie amorphes AlOx, ist Voraussetzung für die Anwendung des Jullière-Modells zur Bestimmung der Spinpolarisation. Das Jullière-Modell verknüpft die Spin-aufgespaltenenrnZustandsdichten der Elektroden mit dem Tunnelmagnetowiderstand. Ohne einernsymmetriebrechende Barriere, zum Beispiel mit MgO als Isolatorschicht, können höhere Tunnelmagnetowiderstände erzwungen werden. Ein eindeutiger Rückschluss auf die Spinpolarisation ist dann jedoch nicht mehr möglich. Mit Aluminiumoxid-basierten Barrieren liefert die Anwendung des einfachen Jullière-Modells eine Untergrenze der Spinpolarisation.rnrnUm die Spinpolarisation von Co2Cr0,6Fe0,4Al durch Tunnelspektroskopie zu bestimmen, musste die Präparation der Tunnelkontakte verbessert werden. Dies wurde ermöglicht durch den Anbau einer neuen Sputterkammer mit besseren UHV-Bedingungen an ein bestehendes Präparationscluster. Co2Cr0,6Fe0,4Al wird mit Hilfe von Radiofrequenz-Kathodenzerstäuben deponiert. Die resultierenden Schichten verfügen nach ihrer Deposition über einen höheren Ordnungsgrad und über eine geordnete Oberfläche. Durch eine Magnesium-Pufferschicht war es möglich, auf diese Oberfläche eine homogene amorphe AlOx-Barriere zu deponieren. Als Gegenelektrode wurde CoFe als Ferromagnet mit MnFe als Antiferromagnet gewählt. Diese Gegenelektrode ermöglicht Tunnelmessungen bis hin zu Raumtemperatur.rnrnMit den in dieser Arbeit vorgestellten optimierten Analyse- und Präparationsmethoden ist es möglich, die Untergrenze der Spinpolarisation von Co2Cr0,6Fe0,4Al auf 67% anzuheben. Dies ist der bisher höchste veröffentlichte Wert der Spinpolarisation von Co2Cr0,6Fe0,4Al.rn

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Functional and smart materials have gained large scientific and practical interest in current research and development. The Heusler alloys form an important class of functional materials used in spintronics, thermoelectrics, and for shape memory alloy applications. An important aspect of functional materials is the adaptability of their physical properties. In this work functional polycrystalline bulk and epitaxial thin film Heusler alloys are characterized by means of spectroscopic investigation methods, X-ray magnetic circular dichroism (XMCD) and energy dispersive X-ray analysis (EDX). With EDX the homogeneity of the samples is studied extensively. For some cases of quaternary compounds, for example Co2(MnxTi1−x)Sn and Co2(Mn0.5Dy0.5)Sn, an interesting phase separation in two nearly pure ternary Heusler phases occurs. For these samples the phase separation leads to an improvement of thermoelectric properties. XMCD as the main investigation method was used to study Co2TiZ (Z = Si, Sn, and Sb), Co2(MnxTi1−x)Si, Co2(MnxTi1−x)Ge, Co2Mn(Ga1−xGex), Co2FeAl, Mn2VAl, and Ni2MnGa Heusler compounds. The element-specific magnetic moments are calculated. Also, the spin-resolved unoccupied density of states is determined, for example giving hints for half-metallic ferromagnetism for some Co-based compounds. The systematic change of the magnetic moments and the shift of the Fermi energy is a proof that Heusler alloys are suitable for a controlled tailoring of physical properties. The comparison of the experimental results with theoretical predictions improves the understanding of complex materials needed to optimize functional Heusler alloys.

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Il fenomeno della magnetoresistenza gigante (GMR) consiste nella marcata variazione della resistenza elettrica di una struttura in forma di film sottile, composta da un’alternanza di strati metallici ferromagnetici (FM) e non magnetici (NM), per effetto di un campo magnetico esterno. Esso è alla base di un gran numero di sensori e dispositivi magnetoelettronici (come ad esempio magnetiche ad accesso casuale, MRAM, ad alta densità) ed ulteriori innovazioni tecnologiche sono in via di elaborazione. Particolarmente rilevanti sono diventate le Spin Valve, dispositivi composti da due strati FM separati da uno spaziatore NM, metallico. Uno dei due film FM (free layer) è magneticamente più soffice rispetto all’altro (reference layer), la cui magnetizzazione è fissata mediante accoppiamento di scambio all’interfaccia con uno strato antiferromagnetico (AFM) adiacente. Tale accoppiamento causa l’insorgenza di una anisotropia magnetica unidirezionale (anisotropia di scambio) per lo strato FM, che si manifesta in uno shift orizzontale del ciclo di isteresi ad esso associato (effetto di exchange bias), solitamente accompagnato anche da un aumento del campo coercitivo. Questo lavoro di tesi riporta la deposizione e la caratterizzazione magnetica e magnetoresistiva di due valvole spin, una a struttura top (SVT) composta da strati di Si/Cu[5 nm]/Py[5 nm]/Cu[5 nm]/Py[5 nm]/IrMn[10 nm], ed una a struttura bottom (SVB), di composizione Si/Cu[5 nm]/IrMn[10 nm]/Py[5 nm]/Cu[5 nm]/Py[5 nm], allo scopo di verificare il comportamento magnetoresistivo gigante del dispositivo per questa particolare scelta dei materiali. I campioni sono stati depositati mediante DC Magnetron sputtering, e caratterizzati magneticamente mediante magnetometro SQUID; la caratterizzazione resistiva è stata eseguita tramite metodo di van der Pawn. Vengono infine presentati i risultati sperimentali, in cui si osserva una variazione di magnetoresistenza nei campioni nell’ordine del punto percentuale.

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We present a mechanism for persistent charge current. Quantum spin Hall insulators hold dissipationless spin currents in their edges so that, for a given spin orientation, a net charge current flows which is exactly compensated by the counterflow of the opposite spin. Here we show that ferromagnetic order in the edge upgrades the spin currents into persistent charge currents without applied fields. For that matter, we study the Hubbard model including Haldane-Kane-Mele spin-orbit coupling in a zigzag ribbon and consider the case of graphene. We find three electronic phases with magnetic edges that carry currents reaching 0.4 nA, comparable to persistent currents in metallic rings, for the small spin-orbit coupling in graphene. One of the phases is a valley half metal.

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Motivated by the unconventional properties and rich phase diagram of NaxCoO2 we consider the electronic and magnetic properties of a two-dimensional Hubbard model on an isotropic triangular lattice doped with electrons away from half-filling. Dynamical mean-field theory (DMFT) calculations predict that for negative intersite hopping amplitudes (t < 0) and an on-site Coulomb repulsion, U, comparable to the bandwidth, the system displays properties typical of a weakly correlated metal. In contrast, for t > 0 a large enhancement of the effective mass, itinerant ferromagnetism, and a metallic phase with a Curie-Weiss magnetic susceptibility are found in a broad electron doping range. The different behavior encountered is a consequence of the larger noninteracting density of states (DOS) at the Fermi level for t > 0 than for t < 0, which effectively enhances the mass and the scattering amplitude of the quasiparticles. The shape of the DOS is crucial for the occurrence of ferromagnetism as for t > 0 the energy cost of polarizing the system is much smaller than for t < 0. Our observation of Nagaoka ferromagnetism is consistent with the A-type antiferromagnetism (i.e., ferromagnetic layers stacked antiferromagnetically) observed in neutron scattering experiments on NaxCoO2. The transport and magnetic properties measured in NaxCoO2 are consistent with DMFT predictions of a metal close to the Mott insulator and we discuss the role of Na ordering in driving the system towards the Mott transition. We propose that the Curie-Weiss metal phase observed in NaxCoO2 is a consequence of the crossover from a bad metal with incoherent quasiparticles at temperatures T > T-* and Fermi liquid behavior with enhanced parameters below T-*, where T-* is a low energy coherence scale induced by strong local Coulomb electron correlations. Our analysis also shows that the one band Hubbard model on a triangular lattice is not enough to describe the unusual properties of NaxCoO2 and is used to identify the simplest relevant model that captures the essential physics in NaxCoO2. We propose a model which allows for the Na ordering phenomena observed in the system which, we propose, drives the system close to the Mott insulating phase even at large dopings.

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In this work is presented and tested (for 106 adducts, mainly of the zinc group halides) two empirical equations supported in TG data to estimate the value of the metal-ligand bond dissociation enthalpy for adducts: <D> (M-O) = t i / g if t i < 420 K and <D> (M-O) = (t i / g ) - 7,75 . 10-2 . t i if t i > 420 K. In this empirical equations, t i is the thermodynamic temperature of the beginning of the thermal decomposition of the adduct, as determined by thermogravimetry, andg is a constant factor that is function of the metal halide considered and of the number of ligands, but is not dependant of the ligand itself. To half of the tested adducts the difference between experimental and calculated values was less than 5%. To about 80% of the tested adducts, the difference between the experimental (calorimetric) and the calculated (using the proposed equations) values are less than 15%.

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The present thesis describes syntheses, structural studies, and catalytic reactivity of new non-classical silane complexes of ruthenium and iron. The ruthenium complexes CpRu(PPri3)CI(T]2-HSiR3) (1) (SiR3 = SiCh (a), SiClzMe (b), SiCIMe2 (c), SiH2Ph (d), SiMe2Ph (e» were prepared by reactions of the new unsaturated complex CpRu(PPri3)CI with silanes. According to NMR studies and X-ray analyses, the complexes la-c exhibit unusual simultaneous Si··· H and Si··· CI-Ru interactions. The complex CpRu(PPri3)CI was also used for the preparation of the first examples of late transition metal agostic silylamido complexes CpRu(PPri3)(N(T]2-HSiMe2)R) (2) (R= Ar or But), which were characterized by NMR spectroscopy. The iron complexes CpFe(PMePri2)H2(SiR3) (3) (SiR3 = SiCh (a), SiClzMe (b), SiCIMe2 (c), SiH2Ph (d), SiMe2Ph (e» were synthesized by the reaction of the new borohydride iron complex CpFe(PMePri2)(B~) with silanes in the presence NEt3. The complexes 3 exhibit unprecedented two simultaneous and equivalent Si··· H interactions, which was confirmed by X-ray analyses and DFT calculations. A series of cationic ruthenium complexes [CpRu(PR3)(CH3CN)(112-HSiR'3)]BAF (PR3 = PPri 3 (4), PPh3 (5); SiR'3 = SiCh (a), SiClzMe (b), SiClMe2 (c), SiH2Ph (d), SiMe2Ph (e» was obtained by substitution of one of the labile acetonitrile ligands in [CpRu(PR3)(CH3CNh]BAF with sHanes. Analogous complexes [TpRu(PR3)(CH3CN)(T]2 -HSiR' 3)]BAF (5) were obtained by the reaction of TpRu(PR3)(CH3CN)CI with LiBAF in the presence of silanes. The complexes 4-5 were characterized by NMR spectroscopy, and the observed coupling constants J(Si-H) allowed us to estimate the extent of Si-H bond activation in these compounds. The catalytic activity in hydrosilylation reactions of all of the above complexes was examined. The most promising results were achieved with the cationic ruthenium precatalyst [CpRu(PPri3)(CH3CN)2t (6). Complex 6 shows good to excellent catalytic activity in the hydrosilylation of carbonyls, dehydrogenative coupling of silanes with alcohols, amines, acids, and reduction of acid chlorides. We also discovered very selective reduction of nitriles and pyridines into the corresponding N-silyl imines and l,4-dihydropyridines, respectively, at room temperature with the possibility of catalyst recycling. These chemoselective catalytic methods have no analogues in the literature. The reactions were proposed to proceed via an ionic mechanism with intermediate formation of the silane a-complexes 4.

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Phytoextraction, the use of plants to extract heavy metals from contaminated soils, could be an interesting alternative to conventional remediation technologies. However, calcareous soils with relatively high total metal contents are difficult to phytoremediate due to low soluble metal concentrations. Soil amendments such as ethylene diaminetetraacetate (EDTA) have been suggested to increase heavy metal bioavailability and uptake in aboveground plant parts. Strong persistence of EDTA and risks of leaching of potentially toxic metals and essential nutrients have led to research on easily biodegradable soilamendments such as citric acid. In our research, EDTA is regarded as a scientific benchmark with which degradable alternatives are compared for enhanced phytoextraction purposes. The effects of increasing doses of EDTA (0.1, 1, 10 mmol kg(-1) dry soil) and citric acid (0.01, 0.05,0.25,0.442, 0.5 mol kg(-1) dry soil) on bioavailable fractions of Cu, Zn, Cd, and Pb were assessed in one part of our study and results are presented in this article. The evolution of labile soil fractions of heavy metals over time was evaluated using water paste saturation extraction (similar to soluble fraction), extraction with 1 M NH4OAc at pH 7 (similar to exchangeable fraction), and extraction with 0.5 M NH4OAc + 0.5 M HOAc + 0.02 M EDTA atpH 4.65 (similar to potentially bioavailable fraction). Both citric acid and EDTA produced a rapid initial increase in labile heavy metal fractions. Metal mobilization remained constant in time for soils treated with EDTA, but metal fractions was noted for soils treated with citric acid. The half life of heavy metal mobilization by citric acid varied between 1.5 and 5.7 d. In the following article, the effect of heavy metal mobilization on uptake by Helianthus annutis will be presented.