A nanowire magnetic memory cell based on a periodic magnetic superlattice

We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits.

A static magnetic memory /

"November 20, 1953"

Improving the performance of virtual memory computers /

"UILU-ENG 78 1741."

A complete floating-decimal interpretative system for the IBM 650 magnetic drum calculator.

Mode of access: Internet.

Aspects of optimum nonlinear filtering using nonlinear zero-memory elements.

"Cornell Aeronautical Laboratory internal research."

Storage of analog variables in delay lines,

Issued also as thesis, University of Illinois.

Phase I report: perceptron applicability to photointerpretation (Project PICS)

"Contract no. Nonr-3161(00) Project no. NR 387-026."

Two theorems of statistical separability in the perceptron (Project Para).

"Contract no. Nonr-2381(00)."

On the convergence of reinforcement procedures in simple perceptors (Project Para)

Mode of access: Internet.

Perceptron simulation experiments (Project Para)

"Contract no. Nonr-2381(00)."

A dynamic magnetic core memory /

"January 7, 1954"

Mermera: Non-Coherent Distributed Shared Memory for Parallel Computing

The proliferation of inexpensive workstations and networks has prompted several researchers to use such distributed systems for parallel computing. Attempts have been made to offer a shared-memory programming model on such distributed memory computers. Most systems provide a shared-memory that is coherent in that all processes that use it agree on the order of all memory events. This dissertation explores the possibility of a significant improvement in the performance of some applications when they use non-coherent memory. First, a new formal model to describe existing non-coherent memories is developed. I use this model to prove that certain problems can be solved using asynchronous iterative algorithms on shared-memory in which the coherence constraints are substantially relaxed. In the course of the development of the model I discovered a new type of non-coherent behavior called Local Consistency. Second, a programming model, Mermera, is proposed. It provides programmers with a choice of hierarchically related non-coherent behaviors along with one coherent behavior. Thus, one can trade-off the ease of programming with coherent memory for improved performance with non-coherent memory. As an example, I present a program to solve a linear system of equations using an asynchronous iterative algorithm. This program uses all the behaviors offered by Mermera. Third, I describe the implementation of Mermera on a BBN Butterfly TC2000 and on a network of workstations. The performance of a version of the equation solving program that uses all the behaviors of Mermera is compared with that of a version that uses coherent behavior only. For a system of 1000 equations the former exhibits at least a 5-fold improvement in convergence time over the latter. The version using coherent behavior only does not benefit from employing more than one workstation to solve the problem while the program using non-coherent behavior continues to achieve improved performance as the number of workstations is increased from 1 to 6. This measurement corroborates our belief that non-coherent shared memory can be a performance boon for some applications.

Magnetic Flip Flops for Space Applications

The radiation environment of space presents a significant threat to the reliability of nonvolatile memory technologies. Ionizing radiation disturbs the charge stored on floating gates, and cosmic rays can permanently damage thin oxides. A new memory technology based on the magnetic tunneling junction (MTJ) appears to offer superior resistance to radiation effects and virtually unlimited write endurance. A magnetic flip flop has a number of potential applications, such as the configuration memory in field-programmable logic devices. However, using MTJs in a flip flop requires radically different circuitry for storing and retrieving data. New techniques are needed to insure that magnetic flip flops are reliable in the radiation environment of space. We propose a new radiation-tolerant magnetic flip flop that uses the inherent resistance of the MTJ to increase its immunity to single event upset and employs a robust “Pac-man” magnetic element.

Evolution of ferromagnetism from a frustrated state in LixNi(2-x)O2 (0.67 < x < 0.98)

Two-dimensional triangular-lattice antiferromagnetic systems continue to be an interesting area in condensed matter physics and LiNiO2 is one such among them. Here we present a detailed experimental magnetic study of the quasi-stoichiometric LixNi2-xO2 system (0.67magnetic ground states-namely spin glass, cluster glass, re-entrant spin glass and ferromagnetic. This study deals with the magnetic properties of these four distinct ground states. The spin glass state is evidenced by the frequency-dependent peak shift as well as the time-dependent slow dynamics (magnetic relaxation, magnetic memory effect etc). By tuning the Li deficiency in a controlled manner, an increase in the ordering temperature is observed. Most strikingly, with the Li deficiency the nature of the magnetic ground state is changed from spin glass to ferromagnetic, with two intermediate states-namely cluster glass and re-entrant spin glass. The critical behaviour of the re-entrant spin glass is also studied here. The critical exponents (beta, gamma and delta) are extracted from the modified Arrot plot, Kouvel-Fisher method, and critical isotherm analysis. The critical exponents match with the long-range mean-field model. The values of the critical exponents are confirmed by the Widom scaling law: delta = 1 + gamma beta(-1). Furthermore, the universality class of the scaling relations is verified, where the scaled m and scaled h collapse into two branches. Finally, based on our observations, a phase diagram is constructed.

Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds

Investigations on thin films that started decades back due to scientific curiosity in the properties of a two-dimensional solid, has developed into a leading research field in recent years due to the ever expanding applications of the thin films in the fann of a variety of active and passive microminiaturized components and devices, solar cells, radiation sowces and detectors, magnetic memory devices, interference filters, refection and antireflection coatings etc. [1]. The recent environment and energy resource concerns have aroused an enonnous interest in the study of materials in thin film form suitable for renewable energy sources such as photovoltaic devices. Recognition of the immense potential applications of the chalcopyrites that can fonn homojunctions or heterojunctions for solar cell fabrication has attracted many researchers to extensive and intense research on them. In this thesis, we have started with studies performed on CuInSe, thin films, a technologically well recognized compound belonging to the l•ill-VI family of semiconductors and have riveted on investigations on the preparation and characterization of compoWlds Culn3Se5. Culn5Seg and CuIn7Se12, an interesting group of compounds related to CuInSe2 called Ordered Vacancy Compounds, having promising applications in photovoltaic devices. A pioneering work attempted on preparing and characterizing the compound Culn7Sel2 is detailed in the chapters on OVC's. Investigation on valence band splitting in avc's have also been attempted for the first time and included as the last chapter in the thesis. Some of the salient features of the chalcopyrite c.ompounds are given in the next section .of this introductory chapter.