New low-power 1.5-bit time-interleaved MDAC based on MOS capacitor amplification

15th IEEE International Conference on Electronics, Circuits and Systems, Malta

Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors

As silicon based devices in integrated circuits reach the fundamental limits of dimensional scaling there is growing research interest in the use of high electron mobility channel materials, such as indium gallium arsenide (InGaAs), in conjunction with high dielectric constant (high-k) gate oxides, for Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based devices. The motivation for employing high mobility channel materials is to reduce power dissipation in integrated circuits while also providing improved performance. One of the primary challenges to date in the field of III-V semiconductors has been the observation of high levels of defect densities at the high-k/III-V interface, which prevents surface inversion of the semiconductor. The work presented in this PhD thesis details the characterization of MOS devices incorporating high-k dielectrics on III-V semiconductors. The analysis examines the effect of modifying the semiconductor bandgap in MOS structures incorporating InxGa1-xAs (x: 0, 0.15. 0.3, 0.53) layers, the optimization of device passivation procedures designed to reduce interface defect densities, and analysis of such electrically active interface defect states for the high-k/InGaAs system. Devices are characterized primarily through capacitance-voltage (CV) and conductance-voltage (GV) measurements of MOS structures both as a function of frequency and temperature. In particular, the density of electrically active interface states was reduced to the level which allowed the observation of true surface inversion behavior in the In0.53Ga0.47As MOS system. This was achieved by developing an optimized (NH4)2S passivation, minimized air exposure, and atomic layer deposition of an Al2O3 gate oxide. An extraction of activation energies allows discrimination of the mechanisms responsible for the inversion response. Finally a new approach is described to determine the minority carrier generation lifetime and the oxide capacitance in MOS structures. The method is demonstrated for an In0.53Ga0.47As system, but is generally applicable to any MOS structure exhibiting a minority carrier response in inversion.

A Study of Influence of Configurations of the Windings on the Performance of Single Phase Induction Motor with Capacitor Start

The single phase induction motors needs two stator windings to produce rotating magnetic field : one main winding and the other auxiliary winding. The aim of the auxiliary winding is to create the rotating electromagnetic field when the machine is started-up and is afterwards turned off, generally through the centrifugal switch coupled together with the shaft of the machine rotor. The main purpose of this document is to evaluate the influence that the two windings have on the external characteristics of the single phase induction motor. For this purpose, two different kinds of windings were carried out and simulated, with the proposal to obtain some benefits. The main winding and the auxiliary winding were prepared and mounted on a prototype. The simulation was done via software based FEM, to make the extraction and results analysis possible. This results are shown at the end this document.

Residual stresses in TiN, DLC and MoS(2) coated surfaces with regard to their tribological fracture behaviour

Thin hard coatings on components and tools are used increasingly due to the rapid development in deposition techniques, tribological performance and application skills. The residual stresses in a coated surface are crucial for its tribological performance. Compressive residual stresses in PVD deposited TiN and DLC coatings were measured to be in the range of 0.03-4 GPa on steel substrate and 0.1-1.3 GPa on silicon. MoS(2) coatings had tensional stresses in the range of 0.8-1.3 on steel and 0.16 GPa compressive stresses on silicon. The fracture pattern of coatings deposited on steel substrate were analysed both in bend testing and scratch testing. A micro-scale finite element method (FEM) modelling and stress simulation of a 2 mu m TiN-coated steel surface was carried out and showed a reduction of the generated tensile buckling stresses in front of the sliding tip when compressive residual stresses of 1 GPa were included in the model. However, this reduction is not similarly observed in the scratch groove behind the tip, possibly due to sliding contact-induced stress relaxation. Scratch and bending tests allowed calculation of the fracture toughness of the three coated surfaces, based on both empirical crack pattern observations and FEM stress calculation, which resulted in highest values for TiN coating followed by MoS(2) and DLC coatings, being K(C) = 4-11, about 2, and 1-2 MPa M(1/2), respectively. Higher compressive residual stresses in the coating and higher elastic modulus of the coating correlated to increased fracture toughness of the coated surface. (C) 2009 Elsevier B.V. All rights reserved.

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W(fin)) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. (C) 2011 Elsevier Ltd. All rights reserved.

Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power

In this work SiOxNy films are produced and characterized. Series of samples were deposited by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperatures from silane (SiH4), nitrous oxide (N2O) and helium (He) precursor gaseous mixtures, at different deposition power in order to analyze the effect of this parameter on the films structural properties, on the SiOxNy/Si interface quality and on the SiOxNy effective charge density. In order to compare the film structural properties with the interface (SiOxNy/Si) quality and effective charge density, MOS capacitors were fabricated using these films as dielectric layer. X-ray absorption near-edge spectroscopy (XANES), at the Si-K edge, was utilized to investigate the structure of the films and the material bonding characteristics were analyzed through Fourier transform infrared spectroscopy (FTIR). The MOS capacitors were characterized by low and high frequency capacitance (C-V) measurements, in order to obtain the interface state density (D-it) and the effective charge density (N-ss). An effective charge density linear reduction for decreasing deposition power was observed, result that is attributed to the smaller amount of ions present in the plasma for low RF power. (C) 2008 Elsevier B.V. All rights reserved.

Impedance characteristics of the diamond/carbon fiber electrodes for electrical double-layer capacitor

The electrochemical performance of carbon fibers (CF) and boron-doped diamond electrodes grown on carbon fiber substrate (BDD/CF) was studied. CF substrates were obtained from polyacrylonitrile precursor heat treated at two different temperatures of 1000 and 2000 degrees C to produce the desirable CF carbon graphitization index. This graphitization process influenced the CF conductivity and its chemical surface, also analyzed from X-ray photoelectron spectroscopy measurements. These three-dimensional CF structures allowed a high incorporation of diamond films compared to other carbon substrates such as glass carbon or HOPG. The electrochemical responses, from these four classes of electrodes, were evaluated focusing their application as electrical double-layer capacitors using cyclic voltammetry and impedance measurements. Cyclic voltammetry results revealed that the electrode formed from BDD grown on CF-2000 presented a typical capacitor behavior with the best rectangular shape, compared to those electrodes of CF or BDD/CF-1000. Furthermore, the BDD/CF-2000 electrode presented the lowest impedance, associated to its significant capacitance value of 1940 mu F/cm(2) taking into account the BDD films. This behavior was attributed to the strong dependence between diamond coating texture and the CF graphitization temperature. The largest surface area of BDD/CF-2000 was promoted by its singular film growth mechanism associated to the substrate chemical surface. (c) 2008 Elsevier B.V. All rights reserved.

Ocorrência simultânea de Staphylococcus aureus enterotoxigênicos nas mãos, boca e fezes em portadores assintomáticos

A possibilidade de ocorrência simultânea de Staphylococcus aureus no nariz, boca, mãos e fezes foi verificada em 112 indivíduos assintomáticos, residentes na cidade de São Paulo, SP, Brasil. De 40 (35,7%) deles a bactéria em questão foi isolada de, pelo menos, um dos nichos estudados. Entre estes portadores, 27 (67,5%) foram positivos em apenas um dos quatro nichos, 8 (20,0%) em dois e 5 (12,5%) em três. Das 113 cepas de S. aureus identificadas, 28 (24,8%) isoladas de 9 (22,5%) dos portadores revelaram-se tox +. Entre essas cepas, 7 (25,0%) produziram enterotoxina do tipo A, 6 (21,4%) do tipo B, 11 (39,3%) do tipo C e 4 (14,3%) dos tipos A e C simultaneamente. A fagotipagem revelou a predominância de cepas sensíveis aos fagos do Grupo I/III/NC (16,8%) . Os resultados obtidos não demonstraram a ocorrência simultânea de cepas de Staphylococcus aureus em amostras colhidas de boca, mãos e fezes do grupo estudado.

On the Problem of Balancing the DC Capacitor Voltage Divider in Back-to-Back Multilevel Converters

This paper presents a new generalized solution for DC bus capacitors voltage balancing in back-to-back m level diode-clamped multilevel converters connecting AC networks. The solution is based on the DC bus average power flow and exploits the switching configuration redundancies. The proposed balancing solution is particularized for the back-to-back multilevel structure with m=5 levels. This back-to-back converter is studied working with bidirectional power flow, connecting an induction machine to the power grid.

Avaliação e controle da qualidade microbiológica de mãos de manipuladores de alimentos

Foi conduzido monitoramento microbiológico das mãos de manipuladores de alimentos como parte de um estudo para implantação do Sistema de Análise de Perigos e Pontos Críticos de Controle em um restaurante institucional, através da contagem padrão de aeróbios mesófilos e anaeróbios facultativos, S. aureus, C. perfringens e presença de Salmonella spp. Foram observadas contagens de microrganismos aerobios mesófilos e anaeróbios facultativos em níveis de até 10(7) UFC/mão, contaminações por S. aureus e C. perfringens e oportunidades de contaminação cruzada por essas mãos principalmente no fatiamento da carne assada. Salmonella spp. não foram isoladas. Foram adotadas medidas corretivas para este ponto crítico de controle, constatando de lavagem das mãos dos manipuladores com água corrente e sabonete líquido neutro seguida de antissepsia com iodóforo. Foram observadas reduções da contagem de aeróbios mesófilos em até 2,6 ciclos log e, apesar desta redução não ser a ideal, ela demonstra a contribuição que esta prática pode trazer aos serviços de alimentação, além do que não foram mais detectados microrganismos patogênicos como S. aureus e C. perfringens.

Fast optimum-predictive control and capacitor voltage balancing strategy for bipolar back-to-back NPC converters in high-voltage direct current transmission systems

Multilevel power converters have been introduced as the solution for high-power high-voltage switching applications where they have well-known advantages. Recently, full back-to-back connected multilevel neutral point diode clamped converters (NPC converter) have been used inhigh-voltage direct current (HVDC) transmission systems. Bipolar-connected back-to-back NPC converters have advantages in long-distance HVDCtransmission systems over the full back-to-back connection, but greater difficulty to balance the dc capacitor voltage divider on both sending and receiving end NPC converters. This study shows that power flow control and dc capacitor voltage balancing are feasible using fast optimum-predictive-based controllers in HVDC systems using bipolar back-to-back-connected five-level NPC multilevel converters. For both converter sides, the control strategytakes in account active and reactive power, which establishes ac grid currents in both ends, and guarantees the balancing of dc bus capacitor voltages inboth NPC converters. Additionally, the semiconductor switching frequency is minimised to reduce switching losses. The performance and robustness of the new fast predictive control strategy, and its capability to solve the DC capacitor voltage balancing problem of bipolar-connected back-to-back NPCconverters are evaluated.

HVDC transmission systems: Bipolar back-to-back diode clamped multilevel converter with fastoptimum-predictive control and capacitor balancing strategy

Voltage source multilevel power converter structures are being considered for high power high voltage applications where they have well known advantages. Recently, full back-to-back connected multilevel neutral diode clamped converters (NPC) have been used in high voltage direct current (HVDC) transmission systems. Bipolar back-to-back connection of NPCs have advantages in long distance HVDC transmission systems, but highly increased difficulties to balance the dc capacitor voltage dividers on both sending and receiving end NPCs. This paper proposes a fast optimum-predictive controller to balance the dc capacitor voltages and to control the power flow in a long distance HVDCsystem using bipolar back-to-back connected NPCs. For both converter sides, the control strategy considers active and reactive power to establish ac grid currents on sending and receiving ends, while guaranteeing the balancing of both NPC dc bus capacitor voltages. Furthermore, the fast predictivecontroller minimizes the semiconductor switching frequency to reduce global switching losses. The performance and robustness of the new fast predictive control strategy and the associated dc capacitors voltage balancing are evaluated. (C) 2011 Elsevier B.V. All rights reserved.

Assertividade e inteligência emocional de mãos dadas na promoção do emprego

Dissertação de Mestrado em Psicologia da Educação, especialidade em Contextos Comunitários.

Validação do questionário de avaliação funcional das mãos em hanseníase

OBJETIVO: Validar as propriedades psicométricas do questionário de avaliação funcional das mãos em hanseníase. MÉTODOS: Estudo realizado com amostra de conveniência de 101 pacientes consecutivos em Brasília, DF, de junho de 2008 a julho de 2009. As pessoas eram adultas afetadas pela hanseníase, com comprometimento nos nervos ulnar, mediano e radial. Foi analisada a reprodutibilidade interobservadores e intraobservador com entrevistas sucessivas e a validade do constructo com associação entre idade, forma clínica da hanseníase, tempo de lesão do nervo, forças de preensão e pinças realizadas com dinamômetro, teste de sensibilidade realizado com monofilamentos de Semmes-Weinstein e avaliação da habilidade manual, utilizando o teste de função manual de Jebsen. Calcularam-se os valores do índice kappa ponderado e construiu-se um gráfico Bland-Altman para avaliar a reprodutibilidade do instrumento. Para a consistência interna, utilizou-se o coeficiente alfa de Cronbach. Foi calculado o coeficiente de correlação de Pearson e usado modelo de regressão múltipla. RESULTADOS: Os valores de kappa ponderado para as avaliações interobservadores e intraobservador variaram de 0,86 a 0,97 e de 0,85 a 0,97, respectivamente. O valor do coeficiente alfa de Cronbach foi de 0,967. O coeficiente de correlação de Pearson mostrou associação (p < 0,001) entre tempo de lesão do nervo, forças de preensão e pinças, sensibilidade cutânea e escore médio do teste de Jebsen. O escore médio do questionário de avaliação funcional das mãos em hanseníase associou-se com classificação operacional da hanseníase, tempo de lesão do nervo, força de preensão, sensibilidade cutânea e habilidade manual (p < 0,0001 para o conjunto do modelo). CONCLUSÕES: O questionário de avaliação funcional das mãos em hanseníase apresenta reprodutibilidade quase perfeita interobservadores e intraobservador, alta consistência interna e correlação com classificação operacional da hanseníase, tempo de lesão do nervo, força de preensão, sensibilidade cutânea nas mãos e habilidade manual.

A CMOS micro power switched-capacitor DC-DC step-up converter for indoor light energy harvesting applications

This paper presents a micro power light energy harvesting system for indoor environments. Light energy is collected by amorphous silicon photovoltaic (a-Si:H PV) cells, processed by a switched capacitor (SC) voltage doubler circuit with maximum power point tracking (MPPT), and finally stored in a large capacitor. The MPPT fractional open circuit voltage (V-OC) technique is implemented by an asynchronous state machine (ASM) that creates and dynamically adjusts the clock frequency of the step-up SC circuit, matching the input impedance of the SC circuit to the maximum power point condition of the PV cells. The ASM has a separate local power supply to make it robust against load variations. In order to reduce the area occupied by the SC circuit, while maintaining an acceptable efficiency value, the SC circuit uses MOSFET capacitors with a charge sharing scheme for the bottom plate parasitic capacitors. The circuit occupies an area of 0.31 mm(2) in a 130 nm CMOS technology. The system was designed in order to work under realistic indoor light intensities. Experimental results show that the proposed system, using PV cells with an area of 14 cm(2), is capable of starting-up from a 0 V condition, with an irradiance of only 0.32 W/m(2). After starting-up, the system requires an irradiance of only 0.18 W/m(2) (18 mu W/cm(2)) to remain operating. The ASM circuit can operate correctly using a local power supply voltage of 453 mV, dissipating only 0.085 mu W. These values are, to the best of the authors' knowledge, the lowest reported in the literature. The maximum efficiency of the SC converter is 70.3 % for an input power of 48 mu W, which is comparable with reported values from circuits operating at similar power levels.