A physical frequency-dependent compact model for RF integrated inductors

A frequency-dependent compact model for inductors in high ohmic substrates, which is based on an energy point-of-view, is developed. This approach enables the description of the most important coupling phenomena that take place inside the device. Magnetically induced losses are quite accurately calculated and coupling between electric and magnetic fields is given by means of a delay constant. The later coupling phenomenon provides a modified procedure for the computation of the fringing capacitance value, when the self-resonance frequency of the inductor is used as a fitting parameter. The model takes into account the width of every metal strip and the pitch between strips. This enables the description of optimized layout inductors. Data from experiments and electromagnetic simulators are presented to test the accuracy of the model.

Improvement of the quality factor of RF integrated inductors by layout optimization

A systematic method to improve the quality (Q) factor of RF integrated inductors is presented in this paper. The proposed method is based on the layout optimization to minimize the series resistance of the inductor coil, taking into account both ohmic losses, due to conduction currents, and magnetically induced losses, due to eddy currents. The technique is particularly useful when applied to inductors in which the fabrication process includes integration substrate removal. However, it is also applicable to inductors on low-loss substrates. The method optimizes the width of the metal strip for each turn of the inductor coil, leading to a variable strip-width layout. The optimization procedure has been successfully applied to the design of square spiral inductors in a silicon-based multichip-module technology, complemented with silicon micromachining postprocessing. The obtained experimental results corroborate the validity of the proposed method. A Q factor of about 17 have been obtained for a 35-nH inductor at 1.5 GHz, with Q values higher than 40 predicted for a 20-nH inductor working at 3.5 GHz. The latter is up to a 60% better than the best results for a single strip-width inductor working at the same frequency.

Design and Development of Compact Coplanar Waveguide Fed Antennas for Wireless Applications

The need of miniaturization in the present day communication industry is challenging. In the present scenario, printed antenna technology is highly suitable for wireless communication due to its low profile and other desirable radiation characteristics. Small monopole type antennas are overruled by compact small antennas for present day mobile communication applications. Coplanar waveguides (CPW) are printed on one side of a dielectric substrate. CPW have attracted the attention of antenna designers due to their excellent properties like ease of integration with ‘MMIC’, low cost, wide bandwidth, flexibility towards multiband operation, low radiation leakage and less dispersion. The requirement of omnidirectional coverage, light weight and low cost made these CPW fed antennas a good candidate for wireless applications. The main focus of the thesis is the study of coplanar waveguide transmission line. Rigorous investigations were performed on both the ground plane and signal strip of a coplanar waveguide transmission line to create effective radiation characteristics. Good amount of works have been done to transform CPW line to antenna suitable for mobile phone applications

Models and methods for power monolithic microwave integrated circuits

Computer aided design of Monolithic Microwave Integrated Circuits (MMICs) depends critically on active device models that are accurate, computationally efficient, and easily extracted from measurements or device simulators. Empirical models of active electron devices, which are based on actual device measurements, do not provide a detailed description of the electron device physics. However they are numerically efficient and quite accurate. These characteristics make them very suitable for MMIC design in the framework of commercially available CAD tools. In the empirical model formulation it is very important to separate linear memory effects (parasitic effects) from the nonlinear effects (intrinsic effects). Thus an empirical active device model is generally described by an extrinsic linear part which accounts for the parasitic passive structures connecting the nonlinear intrinsic electron device to the external world. An important task circuit designers deal with is evaluating the ultimate potential of a device for specific applications. In fact once the technology has been selected, the designer would choose the best device for the particular application and the best device for the different blocks composing the overall MMIC. Thus in order to accurately reproducing the behaviour of different-in-size devices, good scalability properties of the model are necessarily required. Another important aspect of empirical modelling of electron devices is the mathematical (or equivalent circuit) description of the nonlinearities inherently associated with the intrinsic device. Once the model has been defined, the proper measurements for the characterization of the device are performed in order to identify the model. Hence, the correct measurement of the device nonlinear characteristics (in the device characterization phase) and their reconstruction (in the identification or even simulation phase) are two of the more important aspects of empirical modelling. This thesis presents an original contribution to nonlinear electron device empirical modelling treating the issues of model scalability and reconstruction of the device nonlinear characteristics. The scalability of an empirical model strictly depends on the scalability of the linear extrinsic parasitic network, which should possibly maintain the link between technological process parameters and the corresponding device electrical response. Since lumped parasitic networks, together with simple linear scaling rules, cannot provide accurate scalable models, either complicate technology-dependent scaling rules or computationally inefficient distributed models are available in literature. This thesis shows how the above mentioned problems can be avoided through the use of commercially available electromagnetic (EM) simulators. They enable the actual device geometry and material stratification, as well as losses in the dielectrics and electrodes, to be taken into account for any given device structure and size, providing an accurate description of the parasitic effects which occur in the device passive structure. It is shown how the electron device behaviour can be described as an equivalent two-port intrinsic nonlinear block connected to a linear distributed four-port passive parasitic network, which is identified by means of the EM simulation of the device layout, allowing for better frequency extrapolation and scalability properties than conventional empirical models. Concerning the issue of the reconstruction of the nonlinear electron device characteristics, a data approximation algorithm has been developed for the exploitation in the framework of empirical table look-up nonlinear models. Such an approach is based on the strong analogy between timedomain signal reconstruction from a set of samples and the continuous approximation of device nonlinear characteristics on the basis of a finite grid of measurements. According to this criterion, nonlinear empirical device modelling can be carried out by using, in the sampled voltage domain, typical methods of the time-domain sampling theory.

Methane discharge in sediments of the Dvurechenskii mud volcano

During the MARGASCH cruise M52/1 in 2001 with RV Meteor we sampled surface sediments from three stations in the crater of the Dvurechenskii mud volcano (DMV, located in the Sorokin Trough of the Black Sea) and one reference station situated 15 km to the northeast of the DMV. We analysed the pore water for sulphide, methane, alkalinity, sulphate, and chloride concentrations and determined the concentrations of particulate organic carbon, carbonate and sulphur in surface sediments. Rates of anaerobic oxidation of methane (AOM) were determined using a radiotracer (14CH4) incubation method. Numerical transport-reaction models were applied to derive the velocity of upward fluid flow through the quiescently dewatering DMV, to calculate rates of AOM in surface sediments, and to determine methane fluxes into the overlying water column. According to the model, AOM consumes 79% of the average methane flux from depth (8.9 x 10**+ 6 mol a**-1), such that the resulting dissolved methane emission from the volcano into the overlying bottom water can be determined as 1.9 x 10**+ 6 mol a**-1. If it is assumed that all submarine mud volcanoes (SMVs) in the Black Sea are at an activity level like the DMV, the resulting seepage represents less than 0.1% of the total methane flux into this anoxic marginal sea. The new data from the DMV and previously published studies indicate that an average SMV emits about 2.0 x 10**+ 6 mol a**-1 into the ocean via quiescent dewatering. The global flux of dissolved methane from SMVs into the ocean is estimated to fall into the order of 10**+10 mol a**-1. Additional methane fluxes arise during periods of active mud expulsion and gas bubbling occurring episodically at the DMV and other SMVs.

Aplicación práctica transceptor BGT24MTR11 : radar Doppler

En los últimos tiempos, los radares han dejado de ser instrumentos utilizados únicamente en aviación, defensa y detección de velocidad. El avance de la tecnología de radiofrecuencia ha permitido la reducción de coste, tamaño y consumo de los componentes radar. Esto ha permitido que cada sea más frecuente el uso del radar en elementos de nuestra vida cotidiana tales como la automoción, la seguridad, la medida de líquidos… Este proyecto se basa en uno de estos nuevos componentes de bajo coste y pequeño tamaño, el transceptor BGT24MTR11. El BGTR24MTR11 integra transmisor, VCO y receptor, los elementos principales para la creación de un radar Doppler en la banda de frecuencia ISM 24-24,25 GHz. A partir de la placa de evaluación de ese transceptor, se aborda el diseño de un prototipo/demostrador de radar Doppler CW en la banda de 24 GHz. Para la generación de frecuencia se utiliza la placa de evaluación del PLL HMC702 y se ha diseñado un PCB a medida cuyas funciones son las de alimentación, programación y amplificación de las señales recibidas por el prototipo. Por último, se comprueba el correcto funcionamiento del prototipo y se verifica su funcionamiento mediante la simulación de dos escenarios de prueba. ABSTRACT. In the recent times, radar systems have changed of being tools used only in aviation, defence and speed detection. Radiofrequency technology improvements have allowed a cost, size and power consumption of the radar components. This is the reason because each time is more frequent the use of radar in elements of our daily life such as automotive, security, liquid measurements… This Project is base don one of this low power and size components, the MMIC transceptor BGT24MTR11. This transceptor integrates the main components needed to make a Doppler radar in the ISM Band (24-24 GHz), the transmitter, the receiver with the low noise amplifier and the VCO. Using the evaluation board of this transceptor, this Project approach the design of a CW Doppler radar prototype/demonstrator in the frequency band of 24 GHz. The frequency generation is based on the use of the HMC702 PLL evaluation board. Moreover, it has been designed a custom PCB whose funcionts are the power supply, programation and amplification of the signals received by the prototype. At the end, the correct operation of the prototype is verified and it is tested simulating two different test scenarios.

Broadband RF current detector

The problems to be solved in this thesis were 1) development of a broadband RF preamplifier to be used with non-ferrous current probes so that the amplified signal exceeds the errors due to cable pickup, no detection is needed in this application, and 2) development of a self-contained device that amplifies and detects the output from a nonferrous current probe, providing a digital readout of the current. These instruments have been completed and are being tested for use by the National Institutes of Occupational Safety and Health (NIOSH). The self-contained current meter operates at frequencies up to 600 MHz, and detects currents as low as 8 mA . At these current magnitudes, the probe (pick-up coil) will output a voltage of 500μV (-53 dBm on 50Ω) which will have to be raised above 0 dBm. The final circuit uses a RF mixer as a variable attenuator in order to increase the dynamic range, two Monolithic Microwave Integrated Circuits (MMIC) for preamplification, a final broadband amplifier to raise the output compression point, a Schottky diode detector, a sample and hold circuit, and a liquid crystal digital panel meter.

Variable 360° Vector-Sum Phase Shifter With Coarse and Fine Vector Scaling

A CMOS vector-sum phase shifter covering the full 360° range is presented in this paper. Broadband operational transconductance amplifiers with variable transconductance provide coarse scaling of the quadrature vector amplitudes. Fine scaling of the amplitudes is accomplished using a passive resistive network. Expressions are derived to predict the maximum bit resolution of the phase shifter from the scaling factor of the coarse and fine vector-scaling stages. The phase shifter was designed and fabricated using the standard 130-nm CMOS process and was tested on-wafer over the frequency range of 4.9–5.9 GHz. The phase shifter delivers root mean square (rms) phase and amplitude errors of 1.25° and 0.7 dB, respectively, at the midband frequency of 5.4 GHz. The input and output return losses are both below 17 dB over the band, and the insertion loss is better than 4 dB over the band. The circuit uses an area of 0.303 mm2 excluding bonding pads and draws 28 mW from a 1.2 V supply.

High performance terahertz resonant tunnelling diode sources and broadband antenna for air-side radiation

Resonant tunnelling diode (RTD) is known to be the fastest electronics device that can be fabricated in compact form and operate at room temperature with potential oscillation frequency up to 2.5 THz. The RTD device consists of a narrow band gap quantum well layer sandwiched between two thin wide band gap barriers layers. It exhibits negative differential resistance (NDR) region in its current-voltage (I-V) characteristics which is utilised in making oscillators. Up to date, the main challenge is producing high output power at high frequencies in particular. Although oscillation frequencies of ~ 2 THz have been already reported, the output power is in the range of micro-Watts. This thesis describes the systematic work on the design, fabrication, and characterisation of RTD-based oscillators in microwave/millimetre-wave monolithic integrated circuits (MMIC) form that can produce high output power and high oscillation frequency at the same time. Different MMIC RTD oscillator topologies were designed, fabricated, and characterised in this project which include: single RTD oscillator which employs one RTD device, double RTDs oscillator which employs two RTD devices connected in parallel, and coupled RTD oscillators which combine the powers of two oscillators over a single load, based on mutual coupling and which can employ up to four RTD devices. All oscillators employed relatively large size RTD devices for high power operation. The main challenge was to realise high oscillation frequency (~ 300 GHz) in MMIC form with the employed large sized RTD devices. To achieve this aim, proper designs of passive structures that can provide small values of resonating inductances were essential. These resonating inductance structures included shorted coplanar wave guide (CPW) and shorted microstrip transmission lines of low characteristics impedances Zo. Shorted transmission line of lower Zo has lower inductance per unit length. Thus, the geometrical dimensions would be relatively large and facilitate fabrication by low cost photolithography. A series of oscillators with oscillation frequencies in the J-band (220 – 325 GHz) range and output powers from 0.2 – 1.1 mW have been achieved in this project, and all were fabricated using photolithography. Theoretical estimation showed that higher oscillation frequencies (> 1 THz) can be achieved with the proposed MMIC RTD oscillators design in this project using photolithography with expected high power operation. Besides MMIC RTD oscillators, reported planar antennas for RTD-based oscillators were critically reviewed and the main challenges in designing high performance integrated antennas on large dielectric constant substrates are discussed in this thesis. A novel antenna was designed, simulated, fabricated, and characterised in this project. It was a bow-tie antenna with a tuning stub that has very wide bandwidth across the J-band. The antenna was diced and mounted on a reflector ground plane to alleviate the effect of the large dielectric constant substrate (InP) and radiates upwards to the air-side direction. The antenna was also investigated for integration with the all types of oscillators realised in this project. One port and two port antennas were designed, simulated, fabricated, and characterised and showed the suitability of integration with the single/double oscillator layout and the coupled oscillator layout, respectively.