Mass spectrometric studies of metallofullerene

The endrohel metallofullerene, Gd@C-82, Gd@C-80, Gd-2@C-80 were synthesized by using K-H method. The technique of two-step of high pressure and high temperature extraction with 1, 3, 5-trimethylbenzene (first step) and pyridine(second step) has been successfully utilized to extract metallofullerene of Gd@C-82 The gas-phase negative ions of fullerenes C-n(n= 60, 70, 78, 82, 84...) and metallofullerene (Gd@C-82) have been studied by the ESI-MS, REC-MS and MALDI-TOF-MS. The differences among the mass spectra of ESI-MS, REC-MS and MALDI-TOF-MS have been observed and explained. In contrast to the empty fullerene C-82 , the metallofullerene Gd@C-82 should have a larger HOMO-LUMO gap. Experimental results suggest that Gd@C-82 is polarized and Gd3+ located in the off-center position of C-82 cage after Gd3+ is trapped into C-82 cage.

High-temperature and high-pressure extraction of Ln(n)@C-2n(Ln=Y,Gd,Tb)

A high temperature and high pressure method was used to efficiently and selectively extract metallofullerenes Ln(m)@C-2n,(Ln = Y, Gd, Tb) in a closed stainless steel autoclave under inert gas protection. 1, 2, 3-Trichlorobenzene was found to be more effective and selective for the extraction of Ln@C-82 (Ln=Y, Gd, Tb) from empty fullerenes and other metallofullerene species.

Synthesis and characterization of a water-soluble endohedral metallofullerol

A water-soluble endohedral metallofullerol, Pr@C82Om(OH)(n)(m approximate to 10 and n approximate to 10), was successfully synthesized through the reaction of a pure endohedral metallofullerene, Pr@C-82, with a concentrated nitric acid and a subsequent hydrolysis process. The formation of endohedral metallofullerols Pr@C82Om(OH)(n) is thought to involve a NO2 radical formation step, in much the same way as the reaction of empty fullerenes. FT-IR, XPS, and LD-TOF MS techniques were employed to characterize the structure of the endohedral metallofullerol from the above reaction.

High efficient extraction of M@C-2n (M = La, Ce) by a high pressure and high temperature method

A high pressure and high temperature method was used to efficiently extract on a large scale metallofullerenes M@C-2n (M=La,Ce) in a closed vessel under argon gas protection. With pyridine as the HPHT solvent, about 60-80% M@C-2n and 30-55% M@C-82 can be enriched, M@C-82 is dissolved selectively; With toluene as the HPHT solvent, M@C-2n can also be efficiently extracted, especially M@C-74, which is a new member of M@C-2n soluble species. (C) 1998 Elsevier Science Ltd. All rights reserved.

Gas phase derivations of endohedral metallofullerenes by ion-molecular reactions

Gas phase ion-molecular reactions of endohedral metallofullerenes with the self-chemical ionization ion system of vinyl acetate, benzene and acetone in the ion source of the mass spectrometer have been studied. Several derivatized endohedral metallofullerene cations [M@C-82-C2H3O](+), [M-2@C-80-C2H3O](+), [M@C-82-C6H6](+) and [M@C-82-CO-CH3](+) are observed as the major products. The experimental results indicate that endohedral metallofullerenes have active gas phase reactivities and can be efficiently derivatized by some small organic cations.

High-temperature, high-pressure extraction of metallofullerenes Gd@C-2n

A high-temperature, high-pressure extraction technique with toluene and pyridine were employed for the extraction of metallofullerenes Gd@C-2n, A series of Gd@C-2n for 2n from 70 to 96 were effectively extracted by toluene. Gd@C-74 was shown to be a new stable soluble metallofullerene species. Pyridine was found to be more useful for the extraction of Gd@C-82 and Gd-2@C-80 from empty fullerenes and other metallofullerene species.

High-yield Synthesis and Extraction of Gd@C-2n

Endohedral metallofullerene Gd@C-2n were synthesized with high-yield using the carbon-arc discharge method of activating the Gd2O3-containing graphite anode in situ and back-burning technique. A series of Gd@C-2n for 2n from 70 to 96 were effectively extracted by toluene at high-temperature and under high-pressure condition. Gd@C-82, Gd@C-74 were considered to be fairly stable and soluble metallofullerene species.

Simulation of Smart Materials

The aim of this thesis is the elucidation of structure-properties relationship of molecular semiconductors for electronic devices. This involves the use of a comprehensive set of simulation techniques, ranging from quantum-mechanical to numerical stochastic methods, and also the development of ad-hoc computational tools. In more detail, the research activity regarded two main topics: the study of electronic properties and structural behaviour of liquid crystalline (LC) materials based on functionalised oligo(p-phenyleneethynylene) (OPE), and the investigation on the electric field effect associated to OFET operation on pentacene thin film stability. In this dissertation, a novel family of substituted OPE liquid crystals with applications in stimuli-responsive materials is presented. In more detail, simulations can not only provide evidence for the characterization of the liquid crystalline phases of different OPEs, but elucidate the role of charge transfer states in donor-acceptor LCs containing an endohedral metallofullerene moiety. Such systems can be regarded as promising candidates for organic photovoltaics. Furthermore, exciton dynamics simulations are performed as a way to obtain additional information about the degree of order in OPE columnar phases. Finally, ab initio and molecular mechanics simulations are used to investigate the influence of an applied electric field on pentacene reactivity and stability. The reaction path of pentacene thermal dimerization in the presence of an external electric field is investigated; the results can be related to the fatigue effect observed in OFETs, that show significant performance degradation even in the absence of external agents. In addition to this, the effect of the gate voltage on a pentacene monolayer are simulated, and the results are then compared to X-ray diffraction measurements performed for the first time on operating OFETs.