922 resultados para Local Group
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We present Gemini-N GMOS and CFHT MOS spectroscopy of Wolf-Rayet candidates in the Local Group dwarf galaxy IC 10 that were previously identified by Massey et al. and Royer et al. From the present spectroscopic survey, the WC/WN ratio for IC 10 remains unusually high, given its low metallicity, although none of the WC9 stars suspected from narrow-band imaging are confirmed. Our spectroscopy confirms 9 newly discovered Wolf-Rayet candidates from Royer et al., whilst spectral types of 14 Wolf-Rayet stars previously observed by Massey & Armandroff are refined here. In total, there are 26 spectroscopically confirmed Wolf-Rayet stars in IC 10. All but one of the fourteen WC stars are WC4-6 stars, the exception being # 10 from Massey et al., a broad-lined, apparently single WC7 star. There are a total of eleven WN stars, which are predominantly early WN3-4 stars, but include a rare WN10 star, # 8 from Royer et al. # 5 from Massey et al. is newly identified as a transition WN/C star. Consequently, the WC/WN ratio for IC10 is 14/11similar to1.3, unusually high for a metal-poor galaxy. Re-evaluating recent photometric data of Massey & Holmes, we suggest that the true WC/WN ratio may not be as low as similar to0.3. Finally, we present ground-based finding charts for all confirmed WR stars, plus HST/WFPC2 charts for twelve cases.
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Half hour exposures using the ESO VLT/FORS1 combination at Paranal in Chile have allowed us to obtain spectra for three B supergiants in the dwarf irregular galaxy NGC 6822. The spectra have been analysed using non-LTE techniques and temperatures, gravities, helium content and abundances have been obtained. Overall the metallicity of NGC 6822 is found to lie between that of the LMC and of the SMC, in agreement with previous observations of H II regions and in contrast to the earlier findings of Massey et al. (1995). The analysis of H-alpha yields estimates of the mass-loss rates and wind momenta. These results demonstrate that significantly longer exposures with the same instruments will allow us to perform quantitative spectroscopy of blue supergiants in galaxies far beyond the Local Group.
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Understanding the extent, scale and genetic basis of local adaptation is important for conservation and management. Its relevance in salmonids at microgeographic scales, where dispersal (and hence potential gene flow) can be substantial, has however been questioned. Here we compare the fitness of communally-reared offspring of local and foreign Atlantic salmon Salmo salar from adjacent Irish rivers and reciprocal F1 hybrid crosses between them, in the wild ‘home’ environment of the local population. Experimental groups did not differ in wild smolt output but a catastrophic flood event may have limited our ability to detect freshwater performance differences, which were evident in a previous study. Foreign parr exhibited higher, and hybrids intermediate, emigration rates from the natal stream relative to local parr, consistent with genetically-based behavioural differences. Adult return rates were lower for the foreign compared to the local group. Overall lifetime success of foreigners and hybrids relative to locals was estimated at 31% and 40% (mean of both hybrid groups), respectively. The results imply a genetic basis to fitness differences among populations separated by only 50km, driven largely by variation in smolt to adult return rates. Hence even if supplementary stocking programs obtain broodstock from neighbouring rivers, the risk of extrinsic outbreeding depression may be high.
Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
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El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.
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This study reports on the effect of oversowing perennial ryegrass (Lolium perenne L.) into a degraded perennial ryegrass and white clover (Trifolium repens L.) pasture to extend its productive life using various intensities of seedbed preparation. Sites in New South Wales (NSW), Western Australia (WA), South Australia (SA) and Tasmania (Tas.) were chosen by a local group of farmers as being degraded and in need of renovation. Control (nil renovation) and medium (mulch and graze, spray with glyphosphate and sow) renovation treatments were common to all sites whereas minimum (mulch and graze, and sow) and full seedbed (graze and spray with glyphosphate and then full seedbed preparation) renovation were imposed only at some sites. Plots varied in area from 0.14 to 0.50 ha, and were renovated then sown in March or April 2000 and subsequently grazed by dairy cows. Pasture utilisation was estimated from pre- and post-grazing pasture mass assessed by a rising plate pasture meter. Utilised herbage mass of the renovated treatments was significantly higher than control plots in period 1 (planting to August) and 2 (first spring) at the NSW site only. There was no difference among treatments in period 3 (first summer) at any site, and only at the WA and NSW sites in period 4 (March to July 2001) was there a response to renovation. As a result, renovation at the NSW site only significantly increased ryegrass utilisation over the whole experimental period. Ryegrass plant density was higher at the NSW, WA (excluding minimum renovation) and Tas. (excluding full renovation) sites 6 months after renovation but this was only sustained for 12 months for the minimum and medium treatments at the NSW and Tas. sites, respectively, presumably due to reduced competition from naturalised C4 summer grasses [kikuyu (Pennisetum clandestinum) and paspalum (Paspalum dilatatum)] in NSW At the NSW, WA and SA sites, the original ryegrass plant density was low (<35 plants/m2) compared with the Tas. site where density was around 185/m2. The response to renovating a degraded perennial ryegrass pasture varied between sites in Australia. Positive responses were generally small and were most consistent where renovation removed competing C4 summer grasses.
The death of massive stars - I. Observational constraints on the progenitors of Type II-P supernovae
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We present the results of a 10.5-yr, volume-limited (28-Mpc) search for supernova (SN) progenitor stars. In doing so we compile all SNe discovered within this volume (132, of which 27 per cent are Type Ia) and determine the relative rates of each subtype from literature studies. The core-collapse SNe break down into 59 per cent II-P and 29 per cent Ib/c, with the remainder being IIb (5 per cent), IIn (4 per cent) and II-L (3 per cent). There have been 20 II-P SNe with high-quality optical or near-infrared pre-explosion images that allow a meaningful search for the progenitor stars. In five cases they are clearly red supergiants, one case is unconstrained, two fall on compact coeval star clusters and the other twelve have no progenitor detected. We review and update all the available data for the host galaxies and SN environments (distance, metallicity and extinction) and determine masses and upper mass estimates for these 20 progenitor stars using the STARS stellar evolutionary code and a single consistent homogeneous method. A maximum likelihood calculation suggests that the minimum stellar mass for a Type II-P to form is m(min) = 8.5(-1.5)(+1) M-circle dot and the maximum mass for II-P progenitors is m(max) = 16.5 +/- 1.5 M-circle dot, assuming a Salpeter initial mass function holds for the progenitor population (in the range Gamma = -1.35(-0.7)(+0.3)). The minimum mass is consistent with current estimates for the upper limit to white dwarf progenitor masses, but the maximum mass does not appear consistent with massive star populations in Local Group galaxies. Red supergiants in the Local Group have masses up to 25 M-circle dot and the minimum mass to produce a Wolf-Rayet star in single star evolution (between solar and LMC metallicity) is similarly 25-30 M-circle dot. The reason we have not detected any high-mass red supergiant progenitors above 17 M-circle dot is unclear, but we estimate that it is statistically significant at 2.4 sigma confidence. Two simple reasons for this could be that we have systematically underestimated the progenitor masses due to dust extinction or that stars between 17-25 M-circle dot produce other kinds of SNe which are not II-P. We discuss these possibilities and find that neither provides a satisfactory solution. We term this discrepancy the 'red supergiant problem' and speculate that these stars could have core masses high enough to form black holes and SNe which are too faint to have been detected. We compare the Ni-56 masses ejected in the SNe to the progenitor mass estimates and find that low-luminosity SNe with low Ni-56 production are most likely to arise from explosions of low-mass progenitors near the mass threshold that can produce a core-collapse.
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We present deep, narrow-hand photometry of the Local Group starburst galaxy IC10. Our dedicated photometric system provides detection of 13 new Wolf-Rayet (WR) stars and allows spectral subtypes to be assigned. Three of these new stars appear to be WC9 subtypes. If confirmed, these would be the very first WC9 stars ever detected in a low metallicity environment, hence putting strong new constraints on the formation and evolution models of massive stars. Eight of the new WR stars are of the WC subtype, which does not significantly modify the anomalously high WC/WN ratio in IC10. However it is likely that a number of Wolf-Rayet stars of the WNE and WC spectral subtypes are still to be discovered in the heart of the galaxy.
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We show that the X-ray line flux of the Mn Kα line at 5.9 keV from the decay of 55Fe is a promising diagnostic to distinguish between Type Ia supernova (SN Ia) explosion models. Using radiation transport calculations, we compute the line flux for two three-dimensional explosion models: a near-Chandrasekhar mass delayed detonation and a violent merger of two (1.1 and 0.9 M⊙) white dwarfs. Both models are based on solar metallicity zero-age main-sequence progenitors. Due to explosive nuclear burning at higher density, the delayed-detonation model synthesizes ˜3.5 times more radioactive 55Fe than the merger model. As a result, we find that the peak Mn Kα line flux of the delayed-detonation model exceeds that of the merger model by a factor of ˜4.5. Since in both models the 5.9-keV X-ray flux peaks five to six years after the explosion, a single measurement of the X-ray line emission at this time can place a constraint on the explosion physics that is complementary to those derived from earlier phase optical spectra or light curves. We perform detector simulations of current and future X-ray telescopes to investigate the possibilities of detecting the X-ray line at 5.9 keV. Of the currently existing telescopes, XMM-Newton/pn is the best instrument for close (≲1-2 Mpc), non-background limited SNe Ia because of its large effective area. Due to its low instrumental background, Chandra/ACIS is currently the best choice for SNe Ia at distances above ˜2 Mpc. For the delayed-detonation scenario, a line detection is feasible with Chandra up to ˜3 Mpc for an exposure time of 106 s. We find that it should be possible with currently existing X-ray instruments (with exposure times ≲5 × 105 s) to detect both of our models at sufficiently high S/N to distinguish between them for hypothetical events within the Local Group. The prospects for detection will be better with future missions. For example, the proposed Athena/X-IFU instrument could detect our delayed-detonation model out to a distance of ˜5 Mpc. This would make it possible to study future events occurring during its operational life at distances comparable to those of the recent supernovae SN 2011fe (˜6.4 Mpc) and SN 2014J (˜3.5 Mpc).
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The purpose of this paper is, first, to investigate the interconnections of substantive freedoms, which are indispensable for every individual to “lead the kind of lives they have reason to value” (Sen, 1999b, p.10,18), and which have legitimate and ethical reasons to be publicly secured, second, to investigate a conception of public-provision unit that embodies “the right to well-being freedom”, and a conception of decision-making unit that corresponds to it, based on the perspective of Sen’s capability theory and its extension, comparing with that of Rawls’ Theory of Justice and A Law of People. If we intend to construct such a public-provision unit, which conducts redistribution as a whole, and which receives every individual who cannot belong to any fixed local group, what kind of a body should we assume as a public-provision unit? And further, what kind of a body should we assume as a decision-making unit, which is responsible for deciding or revising the basic conceptions of public provision unit?
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Latex a été utilisé pour la redaction de cette thèse.
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Le présent travail de recherche se propose d’analyser les dispositifs de gouvernance nodale de la sécurité locale en France, alors que le paradigme a vu le jour et s’est développé dans les pays anglo-saxons fortement décentralisés. C’est qu’en France les dispositifs de gouvernance nodale s’apparentent bien plus à un dialogue entre central et local qu’entre secteur public et privé. La recherche identifie ainsi les caractéristiques de la gouvernance nodale au cœur des dispositifs partenariaux de la sécurité locale, supportés par le Contrat Local de Sécurité (CLS), le Conseil Local de Sécurité et de Prévention de la Délinquance (CLSPD) ou encore le Groupe Local de Traitement de la Délinquance (GLTD). La recherche identifie ainsi les stratégies de décentrage de l’État et de transfert de la production de sécurité vers une diversité d’acteurs locaux, dont les maires et les services municipaux. Une diversité de politiques publiques locales de sécurité de pertinences différentes voit alors le jour. Le premier enseignement de cette recherche est l’importance du rôle joué par le node super-structurel, que nous appelons super-node et qui regroupe le maire ou l’élu local à la sécurité, le responsable de la police d’État, celui de la police municipale et le représentant de l’État. Il apparaît que dans le dispositif de gouvernance nodale, ce groupe informel génère la dynamique collective qui permet de regrouper, tant les producteurs que les consommateurs de sécurité locale gravitant au sein du réseau local de sécurité. La quarantaine d’entrevues qualitatives permet également d’identifier que la Justice, productrice de sécurité comme peut l’être aussi la sécurité privée ou la médiation sociale, apparaît plus distante que ce que pouvait laisser penser l’étude des textes réglementaires organisant le partenariat. Les bailleurs sociaux, les transporteurs et l’Éducation nationale apparaissent clairement comme des acteurs importants, mais périphériques de sécurité, en intégrant cette « famille élargie » de la sécurité locale. Le deuxième enseignement est relatif au fonctionnement même du dispositif nodal ainsi que du super-node, la recherche permettant d’identifier les ressources mutualisées par l’ensemble des nodes. Cela permet également d’identifier les mécanismes de répartition des tâches entre les différents acteurs et plus particulièrement entre les deux organisations policières d’État et municipale, travaillant autant en compétition, qu’en complémentarité. Cette recherche explore également le rôle joué par l’information dans le fonctionnement du super-node ainsi que l’importance de la confiance dans les relations interpersonnelles des représentants des nodes au sein du super-node. Enfin, l’étude permet également de mettre en perspective les limites du dispositif actuel de gouvernance nodale : le défaut avéré d’outils performants permettant d’informer convenablement le super-node quant aux phénomènes de violence ainsi que d’évaluer l’efficience du dispositif. Cela permet également de questionner l’autonomie des dispositifs de gouvernance nodale, la confiance pouvant ouvrir à la déviance et la collégialité au défaut de la traçabilité de la responsabilité. La fracture avec la société civile apparaît clairement et ne facilite pas le contrôle sur un mode de production de sécurité qui se développe en parallèle des dispositifs traditionnels de démocratie locale.
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We report the discovery of the first known symbiotic star in IC10, a starburst galaxy belonging to the Local Group, at a distance of similar to 750 kpc. The symbiotic star was identified during a survey of emission-line objects. It shines at V = 24.62 +/- 0.04, V - R(C) = 2.77 +/- 0.05 and R(C) - I(C) = 2.39 +/- 0.02, and suffers from E(B-V) = 0.85 +/- 0.05 reddening. The spectrum of the cool component well matches that of solar neighbourhood M8III giants. The observed emission lines belong to Balmer series, [S II], [N II] and [O III]. They suggest a low electronic density, negligible optical depth effects and 35 000 < T(eff) < 90 000 K for the ionizing source. The spectrum of the new symbiotic star in IC10 is an almost perfect copy of that of Hen 2-147, a well-known Galactic symbiotic star and Mira.
Resumo:
The determination of accurate chemical abundances of planetary nebulae (PN) in different galaxies allows us to obtain important constraints on chemical evolution models for these systems. We have a long-term program to derive abundances in the galaxies of the Local Group, particularly the Large and Small Magellanic Clouds. In this work, we present our new results on these objects and discuss their implications in view of recent abundance determinations in the literature. In particular, we obtain distance-independent correlations involving He, N, O, Ne, S, and Ar, and compare the results with data from our own Galaxy and other galaxies in the Local Group. As a result of our observational program, we have a large database of PN in the Galaxy and the Magellanic Clouds, so that we can obtain reliable constraints on the nucleosynthesis processes in the progenitor stars in galaxies of different metallicities.
Resumo:
Este artigo apresenta aspectos da trajetória do Hospital de Caridade São Pedro de Alcântara, na cidade de Goiás, ao longo do século XIX. Instituição leiga fundada no ano de 1825, o hospital nasceu da iniciativa de um grupo local influente que reconheceu um mal social: a ausência de assistência aos destituídos e enfermos. No que se referia à assistência social, ele abarcava funções e princípios caritativos cristãos, assistindo alienados, internados em cárceres, doentes e necessitados em geral, e, com a inauguração do cemitério público, sepultava gratuitamente os indigentes.