Enhanced short wavelength response in laser-scanned-photodiode image sensor using an a-SiC : H/a-Si : H tandem structure

We report in this paper the recent advances we obtained in optimizing a color image sensor based on the laser-scanned-photodiode (LSP) technique. A novel device structure based on a a-SiC:H/a-Si:H pin/pin tandem structure has been tested for a proper color separation process that takes advantage on the different filtering properties due to the different light penetration depth at different wavelengths a-SM and a-SiC:H. While the green and the red images give, in comparison with previous tested structures, a weak response, this structure shows a very good recognition of blue color under reverse bias, leaving a good margin for future device optimization in order to achieve a complete and satisfactory RGB image mapping. Experimental results about the spectral collection efficiency are presented and discussed from the point of view of the color sensor applications. The physics behind the device functioning is explained by recurring to a numerical simulation of the internal electrical configuration of the device.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the colour detection process are analysed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a Double Color Laser Scanned Photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the color detection process are analyzed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Laser scanned photodiodes (LSP) for Image sensing

An optimized ZnO:Al/a-pin SixCl1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed. The LSP utilizes light induced depletion layers as detector and a laser beam for readout. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Experimental data reveal that the large optical gap and the low conductivity of the doped a-SixC1-x:H layers are responsible by an induced inversion layer at the illuminated interfaces which blocks the carrier collection. These insulator-like layers act as MIS gates preventing image smearing. The physical background of the LSP is discussed.

Laser scanned photodiodes (LSPs) for image sensing

An optimized ZnO:Al/a-pin SixC1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Data reveals that for sensors with wide band gap doped layers an increase on the image signal optimized to the blue is achieved with a dynamic range of two orders of magnitude, a responsivity of 6 mA W-1 and a sensitivity of 17 muW cm(-2) at 530 nm. The main output characteristics such as image responsivity, resolution, linearity and dynamic range were analyzed under reverse, forward and short circuit modes. The results show that the sensor performance can be optimized in short circuit mode. A trade-off between the scan time and the required resolution is needed since the spot size limits the resolution due to the cross-talk between dark and illuminated regions leading to blurring effects.

PINPIN a-Si: H based structures for X-ray image detection using the laser scanning technique

Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.

Deciduous tree reconstruction algorithm based on cylinder fitting from mobile terrestrial laser scanned point clouds

Vector reconstruction of objects from an unstructured point cloud obtained with a LiDAR-based system (light detection and ranging) is one of the most promising methods to build three dimensional models of orchards. The cylinder fitting method for woody structure reconstruction of leafless trees from point clouds obtained with a mobile terrestrial laser scanner (MTLS) has been analysed. The advantage of this method is that it performs reconstruction in a single step. The most time consuming part of the algorithm is generation of the cylinder direction, which must be recalculated at the inclusion of each point in the cylinder. The tree skeleton is obtained at the same time as the cluster of cylinders is formed. The method does not guarantee a unique convergence and the reconstruction parameter values must be carefully chosen. A balanced processing of clusters has also been defined which has proven to be very efficient in terms of processing time by following the hierarchy of branches, predecessors and successors. The algorithm was applied to simulated MTLS of virtual orchard models and to MTLS data of real orchards. The constraints applied in the method have been reviewed to ensure better convergence and simpler use of parameters. The results obtained show a correct reconstruction of the woody structure of the trees and the algorithm runs in linear logarithmic time

Novel structure for large area image sensing

This work presents preliminary results in the study of a novel structure for a laser scanned photodiode (LSP) type of image sensor. In order to increase the signal output, a stacked p-i-n-p-i-n structure with an intermediate light-blocking layer is used. The image and the scanning beam are incident through opposite sides of the sensor and their absorption is kept in separate junctions by an intermediate light-blocking layer. As in the usual LSP structure the scanning beam-induced photocurrent is dependent on the local illumination conditions of the image. The main difference between the two structures arises from the fact that in this new structure the image and the scanner have different optical paths leading to an increase in the photocurrent when the scanning beam is incident on a region illuminated on the image side of the sensor, while a decreasing in the photocurrent was observed in the single junction LSP. The results show that the structure can be successfully used as an image sensor even though some optimization is needed to enhance the performance of the device.

Sensor element for a metal-insulator-semiconductor camera system (MISCam)

We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.

Analysis and simulation of a-Si Ha-SiC HPINIP structures for color image detection

It is presented in this paper a study on the photo-electronic properties of multi layer a-Si: H/a-SiC: H p-i-n-i-p structures. This study is aimed to give an insight into the internal electrical characteristics of such a structure in thermal equilibrium, under applied Was and under different illumination condition. Taking advantage of this insight it is possible to establish a relation among-the electrical behavior of the structure the structure geometry (i.e. thickness of the light absorbing intrinsic layers and of the internal n-layer) and the composition of the layers (i.e. optical bandgap controlled through percentage of carbon dilution in the a-Si1-xCx: H layers). Showing an optical gain for low incident light power controllable by means of externally applied bias or structure composition, these structures are quite attractive for photo-sensing device applications, like color sensors and large area color image detector. An analysis based on numerical ASCA simulations is presented for describing the behavior of different configurations of the device and compared with experimental measurements (spectral response and current-voltage characteristic). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conditions for Viewpoint Dependent Face Recognition

Poggio and Vetter (1992) showed that learning one view of a bilaterally symmetric object could be sufficient for its recognition, if this view allows the computation of a symmetric, "virtual," view. Faces are roughly bilaterally symmetric objects. Learning a side-view--which always has a symmetric view--should allow for better generalization performances than learning the frontal view. Two psychophysical experiments tested these predictions. Stimuli were views of shaded 3D models of laser-scanned faces. The first experiment tested whether a particular view of a face was canonical. The second experiment tested which single views of a face give rise to best generalization performances. The results were compatible with the symmetry hypothesis: Learning a side view allowed better generalization performances than learning the frontal view.

Dos modelos de gesso ás imagens tridimensionais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Precision of fit of implant-supported screw-retained 10-unit computer-aided-designed and computer-aided-manufactured frameworks made from zirconium dioxide and titanium: an in vitro study

OBJECTIVE To analyze the precision of fit of implant-supported screw-retained computer-aided-designed and computer-aided-manufactured (CAD/CAM) zirconium dioxide (ZrO) frameworks. MATERIALS AND METHODS Computer-aided-designed and computer-aided-manufactured ZrO frameworks (NobelProcera) for a screw-retained 10-unit implant-supported reconstruction on six implants (FDI positions 15, 13, 11, 21, 23, 25) were fabricated using a laser (ZrO-L, N = 6) and a mechanical scanner (ZrO-M, N = 5) for digitizing the implant platform and the cuspid-supporting framework resin pattern. Laser-scanned CAD/CAM titanium (TIT-L, N = 6) and cast CoCrW-alloy frameworks (Cast, N = 5) fabricated on the same model and designed similar to the ZrO frameworks were the control. The one-screw test (implant 25 screw-retained) was applied to assess the vertical microgap between implant and framework platform with a scanning electron microscope. The mean microgap was calculated from approximal and buccal values. Statistical comparison was performed with non-parametric tests. RESULTS No statistically significant pairwise difference was observed between the relative effects of vertical microgap between ZrO-L (median 14 μm; 95% CI 10-26 μm), ZrO-M (18 μm; 12-27 μm) and TIT-L (15 μm; 6-18 μm), whereas the values of Cast (236 μm; 181-301 μm) were significantly higher (P < 0.001) than the three CAD/CAM groups. A monotonous trend of increasing values from implant 23 to 15 was observed in all groups (ZrO-L, ZrO-M and Cast P < 0.001, TIT-L P = 0.044). CONCLUSIONS Optical and tactile scanners with CAD/CAM technology allow for the fabrication of highly accurate long-span screw-retained ZrO implant-reconstructions. Titanium frameworks showed the most consistent precision. Fit of the cast alloy frameworks was clinically inacceptable.

Preliminary Notes on Two Seasons of Research at Oplontis B (2014-2015)

The complex known as Oplontis B lies in the shadow of Vesuvius, about 3 kilometers west of Pompeii and 300 meters from the well-known Villa A. Since its first excavation and reconstruction in the 1970s and 1980s, Oplontis B has languished in abandonment ―virtually unstudied. The Oplontis Project, led by John Clarke and Michael Thomas, began investigating the site in 2012 after completing its work on Villa A. The documentation of the complex is a primary task. In the past few years members of the Project team have cataloged the previously excavated materials, recording over 1200 wine amphorae as well as a variety of other artifacts. At the same time, Marcus Abbott has laser-scanned the building to produce a detailed plan of the site. The excavations have similar aims: to record the 79 CE level of the complex and to investigate its development. This paper discusses the preliminary results of the last two seasons of excavations and cataloging efforts which build on our previous work conducted in 2012 and 2013.

3D Laser Scanning for Digital Preservation and Dissemination of Cultural Heritage Main scanned objects - Four Temples of Different Religions in Sofia

The project demonstrates the use of modern technologies for preservation and presentation of the cultural and historical heritage. The idea is a database of cultural and historical heritage sites to be created applying three dimensional laser scanning technology and a combination of geodetic and photogrammetric methods and shooting techniques. For the purposes of carrying out this project, we have focused on some heritage sites in the central part of Sofia. We decided to include these particular buildings because of the fact that there is hardly another city in the world where within a radius of 400 m are located four temples of different religions - Jewish, Muslim, Orthodox and Catholic. In the recent years, preservation of cultural heritage has been increasingly linked to objectives of sustainable development. Today, it has become clear that cultural heritage is also an economic resource that should be used for further economic development (through compulsory preservation of its authentic cultural values). There has been a more active public debate on the role of cultural heritage, regarding the following topics: improving the quality of life through development of cultural tourism, leading to an increase of the employment rate, constantly improving the business climate, etc. Cultural heritage preservation is becoming one of the priority objectives of the urban development policy. The focus has been shifted to new ways of preservation, mainly combinations of sophisticated technological solutions and their application for the purposes of preservation and dissemination of the cultural heritage.