Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate

We report the growth of well-ordered InAs QD chains by molecular beam epitaxy system. In order to analyze and extend the results of our experiment, a detailed kinetic Monte Carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of InAs quantum dots (QDs). We find that growth temperature plays a more important role than growth rate in the spatial ordering of the QDs. We also investigate the effect of periodic stress on the shape of QDs in simulation. The simulation results are in good qualitative agreement with our experiment. (c) 2006 Elsevier Ltd. All rights reserved.

Kinetic Monte Carlo simulation of semiconductor quantum dot growth

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Kinetic Monte Carlo study of electrochemical growth in a heteroepitaxial system

Structural and kinetic aspects of 2-D irreversible metal deposition under potentiostatic conditions are analyzed by means of dynamic Monte Carlo simulations employing embedded atom potentials for a model system. Three limiting models, all considering adatom diffusion, were employed to describe adatom deposition. The first model (A) considers adatom deposition on any free substrate site on the surface at the same rate. The second model (B) considers adatom deposition only on substrate sites which exhibit no neighboring sites occupied by adatoms. The third model (C) allows deposition at higher rates on sites presenting neighboring sites occupied by adatoms. Under the proper conditions, the coverage (theta) versus time (t) relationship for the three cases can be heuristically fitted to the functional form theta = 1 - exp(-betat(alpha)), where alpha and beta are parameters. We suggest that the value of the parameter alpha can be employed to distinguish experimentally between the three cases. While model A trivially delivers a = 1, models B and C are characterized by alpha 1, respectively.

Is the pinning of ordinary dislocations in γ-TiAl intrinsic or extrinsic in nature? A combined atomistic and kinetic Monte Carlo approach

We address the question of the observed pinning of 1/2

Object Kinetic Monte Carlo calculations of irradiated Fe-Cr dilute alloys: The effect of the interaction radius between substitutional Cr and self-interstitial Fe

ObjectKineticMonteCarlo models allow for the study of the evolution of the damage created by irradiation to time scales that are comparable to those achieved experimentally. Therefore, the essential ObjectKineticMonteCarlo parameters can be validated through comparison with experiments. However, this validation is not trivial since a large number of parameters is necessary, including migration energies of point defects and their clusters, binding energies of point defects in clusters, as well as the interactionradii. This is particularly cumbersome when describing an alloy, such as the Fe–Cr system, which is of interest for fusion energy applications. In this work we describe an ObjectKineticMonteCarlo model for Fe–Cr alloys in the dilute limit. The parameters used in the model come either from density functional theory calculations or from empirical interatomic potentials. This model is used to reproduce isochronal resistivity recovery experiments of electron irradiateddiluteFe–Cr alloys performed by Abe and Kuramoto. The comparison between the calculated results and the experiments reveal that an important parameter is the capture radius between substitutionalCr and self-interstitialFe atoms. A parametric study is presented on the effect of the capture radius on the simulated recovery curves.

MMonCa: A flexible and powerful new Kinetic Monte Carlo simulator

Kinetic Monte Carlo (KMC) is a widely used technique to simulate the evolution of radiation damage inside solids. Despite de fact that this technique was developed several decades ago, there is not an established and easy to access simulating tool for researchers interested in this field, unlike in the case of molecular dynamics or density functional theory calculations. In fact, scientists must develop their own tools or use unmaintained ones in order to perform these types of simulations. To fulfil this need, we have developed MMonCa, the Modular Monte Carlo simulator. MMonCa has been developed using professional C++ programming techniques and has been built on top of an interpreted language to allow having a powerful yet flexible, robust but customizable and easy to access modern simulator. Both non lattice and Lattice KMC modules have been developed. We will present in this conference, for the first time, the MMonCa simulator. Along with other (more detailed) contributions in this meeting, the versatility of MMonCa to study a number of problems in different materials (particularly, Fe and W) subject to a wide range of conditions will be shown. Regarding KMC simulations, we have studied neutron-generated cascade evolution in Fe (as a model material). Starting with a Frenkel pair distribution we have followed the defect evolution up to 450 K. Comparison with previous simulations and experiments shows excellent agreement. Furthermore, we have studied a more complex system (He-irradiated W:C) using a previous parametrization [1]. He-irradiation at 4 K followed by isochronal annealing steps up to 500 K has been simulated with MMonCa. The He energy was 400 eV or 3 keV. In the first case, no damage is associated to the He implantation, whereas in the second one, a significant Frenkel pair concentration (evolving into complex clusters) is associated to the He ions. We have been able to explain He desorption both in the absence and in the presence of Frenkel pairs and we have also applied MMonCa to high He doses and fluxes at elevated temperatures. He migration and trapping dominate the kinetics of He desorption. These processes will be discussed and compared to experimental results. [1] C.S. Becquart et al. J. Nucl. Mater. 403 (2010) 75

MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

In this work, we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and simulate the defect evolution in three different materials. We start by explaining the theory of OKMC and showing some details of how such theory is implemented by creating generic structures and algorithms in the objects that we want to simulate. Then we successfully reproduce simulated results for defect evolution in iron, silicon and tungsten using our simulator and compare with available experimental data and similar simulations. The comparisons validate MMonCa showing that it is powerful and flexible enough to be customized and used to study the damage evolution of defects in a wide range of solid materials.

Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

Étude de la formation et de l'évolution de nanostructures par méthodes Monte Carlo

Cette thèse, composée de quatre articles scientifiques, porte sur les méthodes numériques atomistiques et leur application à des systèmes semi-conducteurs nanostructurés. Nous introduisons les méthodes accélérées conçues pour traiter les événements activés, faisant un survol des développements du domaine. Suit notre premier article, qui traite en détail de la technique d'activation-relaxation cinétique (ART-cinétique), un algorithme Monte Carlo cinétique hors-réseau autodidacte basé sur la technique de l'activation-relaxation nouveau (ARTn), dont le développement ouvre la voie au traitement exact des interactions élastiques tout en permettant la simulation de matériaux sur des plages de temps pouvant atteindre la seconde. Ce développement algorithmique, combiné à des données expérimentales récentes, ouvre la voie au second article. On y explique le relâchement de chaleur par le silicium cristallin suite à son implantation ionique avec des ions de Si à 3 keV. Grâce à nos simulations par ART-cinétique et l'analyse de données obtenues par nanocalorimétrie, nous montrons que la relaxation est décrite par un nouveau modèle en deux temps: "réinitialiser et relaxer" ("Replenish-and-Relax"). Ce modèle, assez général, peut potentiellement expliquer la relaxation dans d'autres matériaux désordonnés. Par la suite, nous poussons l'analyse plus loin. Le troisième article offre une analyse poussée des mécanismes atomistiques responsables de la relaxation lors du recuit. Nous montrons que les interactions élastiques entre des défauts ponctuels et des petits complexes de défauts contrôlent la relaxation, en net contraste avec la littérature qui postule que des "poches amorphes" jouent ce rôle. Nous étudions aussi certains sous-aspects de la croissance de boîtes quantiques de Ge sur Si (001). En effet, après une courte mise en contexte et une introduction méthodologique supplémentaire, le quatrième article décrit la structure de la couche de mouillage lors du dépôt de Ge sur Si (001) à l'aide d'une implémentation QM/MM du code BigDFT-ART. Nous caractérisons la structure de la reconstruction 2xN de la surface et abaissons le seuil de la température nécessaire pour la diffusion du Ge en sous-couche prédit théoriquement par plus de 100 K.

Nonequilibrium-phase transition and 'specific-heat' singularity in the kinetic Ising model: A Monte Carlo study

The nonequilibrium-phase transition has been studied by Monte Carlo simulation in a ferromagnetically interacting (nearest-neighbour) kinetic Ising model in presence of a sinusoidally oscillating magnetic field. The ('specific-heat') temperature derivative of energies (averaged over a full cycle of the oscillating field) diverge near the dynamic transition point.

Monte carlo simulation for molecular gas dynamics

The dynamics of low-density flows is governed by the Boltzmann equation of the kinetic theory of gases. This is a nonlinear integro-differential equation and, in general, numerical methods must be used to obtain its solution. The present paper, after a brief review of Direct Simulation Monte Carlo (DSMC) methods due to Bird, and Belotserkovskii and Yanitskii, studies the details of theDSMC method of Deshpande for mono as well as multicomponent gases. The present method is a statistical particle-in-cell method and is based upon the Kac-Prigogine master equation which reduces to the Boltzmann equation under the hypothesis of molecular chaos. The proposed Markoff model simulating the collisions uses a Poisson distribution for the number of collisions allowed in cells into which the physical space is divided. The model is then extended to a binary mixture of gases and it is shown that it is necessary to perform the collisions in a certain sequence to obtain unbiased simulation.

Monte Carlo simulation for the modification of polymer via grafting

Monte Carlo method has been applied to investigate the kinetic of grafting reaction in free radical copolymerization. The simulation is quits in agreement with that of theoretical and experimental results. It proves that the Monte Carlo simulation is an effective method for investigating the grafting reaction of free radical copolymerization. (C) 2000 Elsevier Science Ltd. All rights reserved.

Monte Carlo studies of quantum and classical annealing on a double well

We present results for a variety of Monte Carlo annealing approaches, both classical and quantum, benchmarked against one another for the textbook optimization exercise of a simple one-dimensional double well. In classical (thermal) annealing, the dependence upon the move chosen in a Metropolis scheme is studied and correlated with the spectrum of the associated Markov transition matrix. In quantum annealing, the path integral Monte Carlo approach is found to yield nontrivial sampling difficulties associated with the tunneling between the two wells. The choice of fictitious quantum kinetic energy is also addressed. We find that a "relativistic" kinetic energy form, leading to a higher probability of long real-space jumps, can be considerably more effective than the standard nonrelativistic one.