Air stable complementary polymer circuits fabricated in ambient condition by inkjet printing

Air stable complementary polymer inverters were demonstrated by inkjet printing of both top-gate electrodes and the semiconductors in ambient conditions. The p-type and n-type polymer semiconductors were also thermally annealed in ambient conditions after printing. The good performance of circuits in ambient condition shows that the transistors are not only air-stable in term of ambient humidity and oxygen, but also inert to ion migration through dielectrics from the printed gate. The result obtained here has further confirmed the feasibility of fabrication of low-cost polymer complementary circuits in a practical environment. © 2011 Elsevier B.V. All rights reserved.

Jetting behaviour of polymer solutions in drop-on-demand inkjet printing

The jetting of dilute polymer solutions in drop-on-demand printing is investigated. A quantitative model is presented which predicts three different regimes of behaviour depending upon the jet Weissenberg number Wi and extensibility of the polymer molecules. In regime I (Wi < ½) the polymer chains are relaxed and the fluid behaves in a Newtonian manner. In regime II (½ < Wi < L) where L is the extensibility of the polymer chain the fluid is viscoelastic, but the polymer do not reach their extensibility limit. In regime III (Wi > L) the chains remain fully extended in the thinning ligament. The maximum polymer concentration at which a jet of a certain speed can be formed scales with molecular weight to the power of (1-3ν), (1-6ν) and -2ν in the three regimes respectively, where ν is the solvent quality coefficient. Experimental data obtained with solutions of mono-disperse polystyrene in diethyl phthalate with molecular weights between 24 - 488 kDa, previous numerical simulations of this system, and previously published data for this and another linear polymer in a variety of “good” solvents, all show good agreement with the scaling predictions of the model.

One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printing

Recent development of solution processable organic semiconductors delineates the emergence of a new generation of air-stable, high performance p- and n-type materials. This makes it indeed possible for printed organic complementary circuits (CMOS) to be used in real applications. The main technical bottleneck for organic CMOS to be adopted as the next generation organic integrated circuit is how to deposit and pattern both p- and n-type semiconductor materials with high resolutions at the same time. It represents a significant technical challenge, especially if it can be done for multiple layers without mask alignment. In this paper, we propose a one-step self-aligned fabrication process which allows the deposition and high resolution patterning of functional layers for both p- and n-channel thin film transistors (TFTs) simultaneously. All the dimensional information of the device components is featured on a single imprinting stamp, and the TFT-channel geometry, electrodes with different work functions, p- and n-type semiconductors and effective gate dimensions can all be accurately defined by one-step imprinting and the subsequent pattern transfer process. As an example, we have demonstrated an organic complementary inverter fabricated by 3D imprinting in combination with inkjet printing and the measured electrical characteristics have validated the feasibility of the novel technique. © 2012 Elsevier B.V. All rights reserved.

Patterned low temperature copper-rich deposits using inkjet printing

Discrete inkspots of very high copper content were produced using inkjet technology. The reagent disproportionates at low temperature to deposit copper on glass. These deposits were shown to be more than 90% copper by weight by electron probe microanalysis and microbeam Rutherford backscatttering spectroscopy.