Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into account the deformation potential of the core states. This revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. Comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies.

High-pressure studies on Ge-Te glasses. Evidence for a critical composition in IV-VI chalcogenide glassy systems

The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature and pressure. Under high pressure, all the glasses were found to undergo sharp discontinuous transitions from glassy semiconductors to crystalline metal. Several of the observed properties such as the transition pressure, conductivity activation energy and pre-exponential factor, exhibit anomalous trends at a composition x = 20. These results suggest that the x = 20 composition in the Ge-Te system should possess salient structural features. A model based on the unusual stability of structural units is proposed for explaining the anomaly at 20 at.% Ge concentration.

Mechanical and Chemical Thresholds in IV-VI Chalcogenide Glasses

It has been possible to identify two critical compositions in the IV-VI chalcogenide glassy system GexSe100-x by the anomalous variations of the high-pressure electrical resistivity behavior. The first critical composition, the chemical threshold, refers to the stoichiometric composition. The second critical composition, identified recently as the mechanical percolation threshold, is connected with the structural rigidity of the material.

Hydrothermal synthesis and structural characterization of a mixed-valence molybdenum (IV,VI) arsenate (III): Ni(H2NCH2CH2NH2)(3)[((MoO6)-O-IV)(Mo6O18)-O-VI((As3O3)-O-III)(2)]H2O

A novel mixed-valence molybdenum(IV, VI) arsenate(III), Ni(H2NCH2CH2NH2)(3)[((MoO6)-O-IV)(Mo6O18)-O-VI((As3O3)-O-III)(2)]H2O, hydrothermally synthesized and characterized by single-crystal X-ray diffraction and thermogravimetric analysis. The polyanion cage derives from the Anderson structure, in which the central octahedron was filled up by molybdenum(IV) and it was capped on both sides by a novel As3O63- cyclo-triarsenate(III). The title compound had a high catalytic activity for the oxidation of benzaldehyde to benzoic acid using H2O2 as oxidant in a liquid-solid biphase system. (C) 1999 Elsevier Science B.V. All rights reserved.

Thermoelektrische Eigenschaften dünner Schichten und Übergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

Als ein vielversprechendes Konzept zur Erhöhung der thermoelektrischen Effizienz wird seit Anfang der 90er Jahre die Nutzung niederdimensionaler Systeme angesehen. Aus theoretischen Arbeiten von Hicks und Dresselhaus folgt, dass in ein- und zweidimensionalen Systemen eine Erhöhung der thermoelektrischen Effizienz möglich ist, die einen Durchbruch für die Anwendung thermoelektrischer Wandler zur Folge haben könnte. Die Realisierung solcher niederdimensionaler Systeme ist in geeigneten Mehrlagenstrukturen und durch Verwendung von Halbleiterverbindungen mit unterschiedlicher Energiebandlücke möglich. Ziel des Verbundprojektes Nitherma war es Mehrfachschichtsysteme mit 2-dimensionalem Transportverhalten aus thermoelektrischen Materialien (Pb1-xSrxTe, Bi2(SexTe1-x)3) herzustellen und auf die erwartete hohe thermoelektrische Effizienz zu untersuchen. Diese wurde messtechnischrndurch die Bestimmung der elektrischen Leitfähigkeit, des Seebeck-Koeffizienten und der Wärmeleitfähigkeit parallel zu den Schichtebenen (in-plane-Transporteigenschaft) ermittelt. Ziel dieser Arbeit war einerseits die Verbesserung der Präparations- und Messtechnik bei der Untersuchung der Wärmeleitfähigkeit von Schichten und Schichtsystemen sowie die Demonstration der Reproduzierbarkeit, andererseits die Interpretation der an niederdimensionalen Strukturen ermittelten Transportmessungen. Um den Einfluß der Niederdimensionalität auf die Wärmeleitfähigkeit zu ermitteln, wurden umfangreiche Messungen an unterschiedlich dimensionierten Übergitter- und Multi-Quantum-Well-Strukturen (MQW-Strukturen) durchgeführt. Die Verifizierung der von den Projektpartnern durchgeführten Transportmessungen wurde durch die Messung des Seebeck-Koeffizienten unterstützt.Neben der Charakterisierung durch Transportmessungen erfolgte die Bestimmung der thermoelektrischen Effizienz.

Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors : first technical progress report for April 15 - June 30, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Tomus IV [-VI] Rerum Concilii Constantiensis Corpus actorum et decretorum magni Constantiensis Concilii de ecclesiae reformatione unione ac fide ... /

Mode of access: Internet.

Appendice alle memorie Sulla risoluzione numerica delle equazioni inserite nel volumi III, IV, VI, ecc. del m.e. prof. Giusto Bellavitis.

From Istituto veneto di scienze, lettere ed arti. Memorie, vol. IX, 1860.

Commercial tariffs and regulations of the several states of Europe and America, together with the commercial treaties between England and foreign countries, Pt. IV-[VI, VIII-XXI, XXIII]

Master microform held by: ResP.

Hug. Donelli ... Commentarij absolutissimi ad II, III, IV, VI et VIII libros codicis Iustinianei ...

Mode of access: Internet.

Selections from Paradise lost, including books I. and II. entire, and portions of books III., IV., VI., VII., and X. With introduction, suggestions for study, and glossary.

Mode of access: Internet.

Zur Uebersetzung und Erlaeuterung der Kanones IV, VI und VII des Konzils von Nicaea.

Thesis (doctoral)--Grossherzoglich Hessische Ludwigs-Universitat zu Giessen.

Fragm. lat. I 77 - Graduale (Fer.IV - VI et Sabb. aus der Quatemberwoche der Quadragesima)

Trägerband: 'Scriptum Thom. Aquin. 1490'

Earth-Abundant Zinc-IV-Nitride Semiconductors

This investigation is motivated by the need for new visible frequency direct bandgap semiconductor materials that are abundant and low-cost to meet the increasing demand for optoelectronic devices in applications such as solid state lighting and solar energy conversion. Proposed here is the utilization of zinc-IV-nitride materials, where group IV elements include silicon, germanium, and tin, as earth-abundant alternatives to the more common III-nitrides in optoelectronic devices. These compound semiconductors were synthesized under optimized conditions using reactive radio frequency magnetron sputter deposition. Single phase ZnSnN₂, having limited experimental accounts in literature, is validated by identification of the wurtzite-derived crystalline structure predicted by theory through X-ray and electron diffraction studies. With the addition of germanium, bandgap tunability of ZnSn_xGe_1-xN₂ alloys is demonstrated without observation of phase separation, giving these materials a distinct advantage over In_xGa_1-xN alloys. The accessible bandgaps range from 1.8 to 3.1 eV, which spans the majority of the visible spectrum. Electron densities, measured using the Hall effect, were found to be as high as 10²² cm⁻³ and indicate that the compounds are unintentionally degenerately doped. Given these high carrier concentrations, a Burstein-Moss shift is likely affecting the optical bandgap measurements. The discoveries made in this thesis suggest that with some improvements in material quality, zinc-IV-nitrides have the potential to enable cost-effective and scalable optoelectronic devices.