995 resultados para INDUCED GAP


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We calculate the thermopower of monolayer graphene in various circumstances. We consider acoustic phonon scattering which might be the operative scattering mechanism in freestanding films and predict that the thermopower will be linear in any induced gap in the system. Further, the thermopower peaks at the same value of chemical potential (tunable by gate voltage) independent of the gap. We show that in the semiclassical approximation, the thermopower in a magnetic field saturates at high field to a value which can be calculated exactly and is independent of the details of the scattering. This effect might be observable experimentally. We also note that a Yukawa scattering potential can be used to fit experimental data for the thermopower for reasonable values of the screening length parameter.

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Fundamental gap renormalization due to electronic polarization is a basic phenomenon in molecular crystals. Despite its ubiquity and importance, all conventional approaches within density-functional theory completely fail to capture it, even qualitatively. Here, we present a new screened range-separated hybrid functional, which, through judicious introduction of the scalar dielectric constant, quantitatively captures polarization-induced gap renormalization, as demonstrated on the prototypical organic molecular crystals of benzene, pentacene, and C-60. This functional is predictive, as it contains system-specific adjustable parameters that are determined from first principles, rather than from empirical considerations.

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The work described in this dissertation includes fundamental investigations into three surface processes, namely inorganic film growth, water-induced oxidation, and organic functionalization/passivation, on the GaP and GaAs(001) surfaces. The techniques used to carry out this work include scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. Atomic structure, electronic structure, reaction mechanisms, and energetics related to these surface processes are discussed at atomic or molecular levels.

First, we investigate epitaxial Zn3P2 films grown on the Ga-rich GaAs(001)(6×6) surface. The film growth mechanism, electronic properties, and atomic structure of the Zn3P2/GaAs(001) system are discussed based on experimental and theoretical observations. We discover that a P-rich amorphous layer covers the crystalline Zn3P2 film during and after growth. We also propose more accurate picture of the GaP interfacial layer between Zn3P2 and GaAs, based on the atomic structure, chemical bonding, band diagram, and P-replacement energetics, than was previously anticipated.

Second, DFT calculations are carried out in order to understand water-induced oxidation mechanisms on the Ga-rich GaP(001)(2×4) surface. Structural and energetic information of every step in the gaseous water-induced GaP oxidation reactions are elucidated at the atomic level in great detail. We explore all reasonable ground states involved in most of the possible adsorption and decomposition pathways. We also investigate structures and energies of the transition states in the first hydrogen dissociation of a water molecule on the (2×4) surface.

Finally, adsorption structures and thermal decomposition reactions of 1-propanethiol on the Ga-rich GaP(001)(2×4) surface are investigated using high resolution STM, XPS, and DFT simulations. We elucidate adsorption locations and their associated atomic structures of a single 1-propanethiol molecule on the (2×4) surface as a function of annealing temperature. DFT calculations are carried out to optimize ground state structures and search transition states. XPS is used to investigate variations of the chemical bonding nature and coverage of the adsorbate species.

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Perforant path long-term potentiation (LTP) in intact mouse hippocampal dentate gyrus increased the neuron-specific, growth-associated protein GAP-43 mRNA in hilar cells 3 days after tetanus, but surprisingly not in granule cells, the perforant path target. This increase was positively correlated with level of enhancement and restricted to central hilar cells on the side of stimulation. Blockade of LTP by puffing dl-aminophosphonovalerate (APV), an N-methyl-d-aspartate (NMDA) receptor blocker into the molecular layer, eliminated LTP-induced GAP-43 mRNA elevation in hilar cells. To determine whether the mRNA elevation was mediated by transcription, LTP was studied in transgenic mice bearing a GAP-43 promoter-lacZ reporter gene. Promoter activity as indexed by Transgene expression (PATE) increased as indicated by blue staining of the lacZ gene product, β-galactosidase. Potentiation induced a blue band bilaterally in the inner molecular layer of the dentate gyrus along the entire septotemporal axis. Because mossy cells are the only neurons in the central hilar zone that project to the inner molecular layer bilaterally along the entire septotemporal axis and LTP-induced activation of PATE in this zone was confined to the side of stimulation, we concluded that mossy cells were unilaterally activated, increasing synthesis of β-galactosidase, which was transported bilaterally. Neither granule cells nor pyramidal cells demonstrated increased PATE or increased GAP-43 mRNA levels. These results and recent evidence indicating the necessity of hilar neurons for LTP point to previously unheralded mossy cells as potentially critical for perforant path LTP and the GAP-43 in these cells as important for LTP persistence lasting days.

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We report 3 au resolution imaging observations of the protoplanetary disk aroundTW Hya at 145 and 233 GHz with the Atacama Large Millimeter/Submillimeter Array.Our observations revealed two deep gaps (~25-50 %) at 22 and 37 au and shallowergaps (a few %) at 6, 28, and 44 au, as recently reported by Andrews et al. (2016). Thecentral hole with a radius of  3 au was also marginally resolved. The most remarkablefinding is that the spectral index α(R) between bands 4 and 6 peaks at the 22 au gap.The derived power-law index of the dust opacity β(R) is  ~1.7 at the 22 au gap anddecreases toward the disk center to ~0. The most prominent gap at 22 au could becaused by the gravitational interaction between the disk and an unseen planet with amass of ≲1.5 MNeptune although other origins may be possible. The planet-induced gap is supported by the fact that β(R) is enhanced at the 22 au gap, indicating a deficitof mm-sized grains within the gap due to dust filtration by a planet.

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X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs heterojunction interface. The valence band offset is determined to be 2.39 +/- 0.23 eV. As a consequence, a type-II heterojunction with a conduction band offset of -0.44 +/- 0.23 eV is found. The directly obtained value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. (c) 2008 American Institute of Physics.

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X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations.

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This paper presents a detailed PL study of Fe2+ related four zero-phonon(ZP) lines and their related phonon sidebands. Four zero-phonon transitions at approximate to 2800 cm(-1) along with the accompanying phonon sidebands extending down to 2400 cm(-1). There are ta two prominent regions in the phonon sidebands. One is ascribed to coupling to acoustic-type phonons (2700 cm(-1) region), the other is due to coupling to optic-type phonons (2500 cm(-1) region). Beside broad coupling with lattice modes, there are several groups of lines. They are ascribed to resonant modes, impurities induced gap modes and local modes.

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We investigate solitary excitations in a model of a one-dimensional antiferromagnet including a single-ion anisotropy and a Dzyaloshinsky-Moriya antisymmetric exchange interaction term. We employ the Holstein-Primakoff transformation, the coherent state ansatz and the time variational principle. We obtain two partial differential equations of motion by using the method of multiple scales and applying perturbation theory. By so doing, we show that the motion of the coherent amplitude must satisfy the nonlinear Schrodinger equation. We give the single-soliton solution.

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In terms of atmospheric impact, the volcanic eruption of Mt. Pinatubo (1991) is the best characterized large eruption on record. We investigate here the model-derived stratospheric warming following the Pinatubo eruption as derived from SAGE II extinction data including recent improvements in the processing algorithm. This method, termed SAGE_4λ, makes use of the four wavelengths (385, 452, 525 and 1024 nm) of the SAGE II data when available, and uses a data-filling procedure in the opacity-induced "gap" regions. Using SAGE_4λ, we derived aerosol size distributions that properly reproduce extinction coefficients also at much longer wavelengths. This provides a good basis for calculating the absorption of terrestrial infrared radiation and the resulting stratospheric heating. However, we also show that the use of this data set in a global chemistry–climate model (CCM) still leads to stronger aerosol-induced stratospheric heating than observed, with temperatures partly even higher than the already too high values found by many models in recent general circulation model (GCM) and CCM intercomparisons. This suggests that the overestimation of the stratospheric warming after the Pinatubo eruption may not be ascribed to an insufficient observational database but instead to using outdated data sets, to deficiencies in the implementation of the forcing data, or to radiative or dynamical model artifacts. Conversely, the SAGE_4λ approach reduces the infrared absorption in the tropical tropopause region, resulting in a significantly better agreement with the post-volcanic temperature record at these altitudes.

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Graphene as a carbon monolayer has attracted extensive research interest in recent years. My research work within the frame of density functional theory has suggested that positioning graphene in proximity to h-BN may induce a finite energy gap in graphene, which is important for device applications. For an AB-stacked graphene/BN bilayer, a finite gap is induced at the equilibrium configuration. This induced gap shows a linear relationship with the applied strain. For a graphene/BN/graphene trilayer, a negligible gap is predicted in the ground state due to the overall symmetry of the system. When an electric field is applied, a tunable gap can be obtained for both AAA and ABA stackings. Enhanced tunneling current in the AA-stacked bilayer nanoribbons is predicted compared to either single-layer or AB-stacked bilayer nanoribbons. Interlayer separation between the nanoribbons is shown to have a profound impact on the conducting features. The effect of boron or nitrogen doping on the electronic transport properties of C60 fullerene is studied. The BC59 fullerene exhibits a considerably higher current than the pristine or nitrogen doped fullerenes beyond the applied bias of 1 V, suggesting it can be an effective semiconductor in p-type devices. The interaction between nucleic acid bases - adenine (A), guanine (G), cytosine (C), thymine (T) and uracil (U) - and a hydrogen-passivated silicon nanowire (SiNW) is investigated. The binding energy of the bases with the SiNW shows the order: G > A~C~T~U. This suggests that the interaction strength of a hydrogen passivated SiNW with the nucleic acid bases is nearly the same-G being an exception. The nature of the interaction is suggested to be electrostatic.

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Photoluminescence and Raman scattering experiments have been carried out on single crystals of C70 up to 31 GPa to investigate the effect of pressure on the optical band gap, vibrational modes and stability of the molecule. The photoluminescence band shifts to lower energies and the pressure dependence of the band maxima yields the hydrostatic deformation potential to be 2.15 eV. The slope changes in the pressure dependence of peak positions and linewidths of the Raman modes associated with the intramolecular vibrations at 1 GPa mark the known face-centred cubic-->rhombohedral orientational ordering transition. The reversible amorphization in C70 at P > 20 GPa has been compared with the irreversible amorphization in C60 at P > 22 GPa in terms of carbon-carbon distance between the neighbouring molecules at the threshold transition pressures, in conjunction with the interplay between the intermolecular and intramolecular interactions.

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This study describes a combined empirical/modeling approach to assess the possible impact of climate variability on rice production in the Philippines. We collated climate data of the last two decades (1985-2002) as well as yield statistics of six provinces of the Philippines, selected along a North-South gradient. Data from the climate information system of NASA were used as input parameters of the model ORYZA2000 to determine potential yields and, in the next steps, the yield gaps defined as the difference between potential and actual yields. Both simulated and actual yields of irrigated rice varied strongly between years. However, no climate-driven trends were apparent and the variability in actual yields showed no correlation with climatic parameters. The observed variation in simulated yields was attributable to seasonal variations in climate (dry/wet season) and to climatic differences between provinces and agro-ecological zones. The actual yield variation between provinces was not related to differences in the climatic yield potential but rather to soil and management factors. The resulting yield gap was largest in remote and infrastructurally disfavored provinces (low external input use) with a high production potential (high solar radiation and day-night temperature differences). In turn, the yield gap was lowest in central provinces with good market access but with a relatively low climatic yield potential. We conclude that neither long-term trends nor the variability of the climate can explain current rice yield trends and that agroecological, seasonal, and management effects are over-riding any possible climatic variations. On the other hand the lack of a climate-driven trend in the present situation may be superseded by ongoing climate change in the future.

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The magnetic response of the near-band-edge optical properties is studied in EuTe layers. In several magneto-optical experiments, the absorption and emission are described as well as the related Stokes shift. Specifically, we present the first experimental report of the photoluminescence excitation (PLE) spectrum in Faraday configuration. The PLE spectra shows to be related with the absorption spectra through the observation of resonance between the excitation light and the zero-field band-gap. A new emission line appears at 1.6 eV at a moderate magnetic field in the photoluminescence (PL) spectra. Furthermore, we examine the absorption and PL red-shift induced by the magnetic field in the light of the d-f exchange interaction energy involved in these processes. Whereas the absorption red-shift shows a quadratic dependence on the field, the PL red-shift shows a linear dependence which is explained by spin relaxation of the excited state.

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The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.