Effetti della risoluzione spaziale nella stima della dissipazione con sensore hot-wire

L'obiettivo primario di questo elaborato di tesi è quello di stimare l'effetto della risoluzione spaziale e quindi della lunghezza finita del sensore di un anemometro a filo caldo, sul calcolo delle derivate che contribuiscono a valutare la dissipazione.

Hot wire manufacturing and resolution effects in high Reynolds number flows

Lo studio della turbolenza è di fondamentale importanza non solo per la fluidodinamica teorica ma anche perchè viene riscontrata in una moltitudine di problemi di interesse ingegneristico. All'aumentare del numero di Reynolds, le scale caratteristiche tendono a ridurre le loro dimensioni assolute. Nella fluidodinamica sperimentale già da lungo tempo si è affermata l'anemometria a filo caldo, grazie ad ottime caratteristiche di risoluzione spaziale e temporale. Questa tecnica, caratterizzata da un basso costo e da una relativa semplicità, rende possibile la realizzazione di sensori di tipo artigianale, che hanno il vantaggio di poter essere relizzati in dimensioni inferiori. Nonostante l'ottima risoluzione spaziale degli hot-wire, infatti, si può verificare, ad alto numero di Reynolds, che le dimensioni dell'elemento sensibile siano superiori a quelle delle piccole scale. Questo impedisce al sensore di risolvere correttamente le strutture più piccole. Per questa tesi di laurea è stato allestito un laboratorio per la costruzione di sensori a filo caldo con filo di platino. Sono in questo modo stati realizzati diversi sensori dalle dimensioni caratteristiche inferiori a quelle dei sensori disponibili commercialmente. I sensori ottenuti sono quindi stati testati in un getto turbolento, dapprima confrontandone la risposta con un sensore di tipo commerciale, per verificarne il corretto funzionamento. In seguito si sono eseguite misure più specifiche e limitate ad alcune particolari zone all'interno del campo di moto, dove è probabile riscontrare effetti di risoluzione spaziale. Sono stati analizzati gli effetti della dimensione fisica del sensore sui momenti statistici centrali, sugli spettri di velocità e sulle funzioni di densità di probabilità.

Method for obtaining minimum noise in a general purpose hot wire amplifier

It has been shown that the conventional practice of designing a compensated hot wire amplifier with a fixed ceiling to floor ratio results in considerable and unnecessary increase in noise level at compensation settings other than optimum (which is at the maximum compensation at the highest frequency of interest). The optimum ceiling to floor ratio has been estimated to be between 1.5-2.0 ωmaxM. Application of the above considerations to an amplifier in which the ceiling to floor ratio is optimized at each compensation setting (for a given amplifier band-width), shows the usefulness of the method in improving the signal to noise ratio.

Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures

Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( HWCVD) on glass at 250 degreesC with W or Ta wire as the catalyzers. The structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with X-c > 90 % ( X-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, R-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) Omega(-1) cm(-1), Ea(a) approximate to 0.5eV and E-opt less than or equal to 1.3eV.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition

Undoped hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared at low temperature by hot wire chemical vapor deposition (HWCVD). Microstructures of the mu c-Si:H films with different H-2/SiH4 ratios and deposition pressures have been characterized by infrared spectroscopy X-ray diffraction (XRD), Raman scattering, Fourier transform (FTIR), cross-sectional transmission electron microscopy (TEM) and small angle X-ray scattering (SAX). The crystallization of silicon thin film was enhanced by hydrogen dilution and deposition pressure. The TEM result shows the columnar growth of mu c-Si:H thin films. An initial microcrystalline Si layer on the glass substrate, instead of the amorphous layer commonly observed in plasma enhanced chemical vapor deposition (PECVD), was observed from TEM and backside incident Raman spectra. The SAXS data indicate an enhancement of the mass density of mu c-Si:H films by hydrogen dilution. Finally, combining the FTIR data with the SAXS experiment suggests that the Si--H bonds in mu c-Si:H and in polycrystalline Si thin films are located at the grain boundaries. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.