Plane-strain discrete dislocation plasticity with climb-assisted glide motion of dislocations

A small-strain two-dimensional discrete dislocation plasticity (DDP) framework is developed wherein dislocation motion is caused by climb-assisted glide. The climb motion of the dislocations is assumed to be governed by a drag-type relation similar to the glide-only motion of dislocations: such a relation is valid when vacancy kinetics is either diffusion limited or sink limited. The DDP framework is employed to predict the effect of dislocation climb on the uniaxial tensile and pure bending response of single crystals. Under uniaxial tensile loading conditions, the ability of dislocations to bypass obstacles by climb results in a reduced dislocation density over a wide range of specimen sizes in the climb-assisted glide case compared to when dislocation motion is only by glide. A consequence is that, at least in a single slip situation, size effects due to dislocation starvation are reduced. By contrast, under pure bending loading conditions, the dislocation density is unaffected by dislocation climb as geometrically necessary dislocations (GNDs) dominate. However, climb enables the dislocations to arrange themselves into lower energy configurations which significantly reduces the predicted bending size effect as well as the amount of reverse plasticity observed during unloading. The results indicate that the intrinsic plasticity material length scale associated with GNDs is strongly affected by thermally activated processes and will be a function of temperature. © 2013 IOP Publishing Ltd.

Strain gradients in Cu-Fe thin films and multilayers during micropillar compression

Plastic strain gradients can influence the work-hardening behaviour of metals due to the accumulation of geometrically necessary discolations at the micron/submicron scale. A finite element model based on the conventional theory of mechanism-based strain-gradient plasticity has been developed to simulate the micropillar compression of Cu–Fe thin films and multilayers. The modelling results show that the geometric constraints lead to inhomogeneous deformation in the Cu layers, which agrees well with the bulging of Cu layers observed experimentally. Plastic strain gradients develop inside the individual layers, leading to extra work-hardening due to the accumulation of geometrically necessary dislocations. In the multilayer specimens, the Cu layers deform more severely than the Fe layers, resulting in the development of tensile stresses in the Fe layers. It is proposed that these tensile stresses are responsible for the development of micro-cracks in the Fe layers.

Structure and properties of graphene nano disks (GND) with and without edge-dopants

Graphene is one of the most important materials. In this research, the structures and properties of graphene nano disks (GND) with a concentric shape were investigated by Density Functional Theory (DFT) calculations, in which the most effective DFT methods - B3lyp and Pw91pw91 were employed. It was found that there are two types of edges - Zigzag and Armchair in concentric graphene nano disks (GND). The bond length between armchair-edge carbons is much shorter than that between zigzag-edge carbons. For C24 GND that consists of 24 carbon atoms, only armchair edge with 12 atoms is formed. For a GND larger than the C24 GND, both armchair and zigzag edges co-exist. Furthermore, when the number of carbon atoms in armchair-edge are always 12, the number of zigzag-edge atoms increases with increasing the size of a GND. In addition, the stability of a GND is enhanced with increasing its size, because the ratio of edge-atoms to non-edge-atoms decreases. The size effect of a graphene nano disk on its HOMO-LUMO energy gap was evaluated. C6 and C24 GNDs possess HOMO-LUMO gaps of 1.7 and 2.1eV, respectively, indicating that they are semi-conductors. In contrast, C54 and C96 GNDs are organic metals, because their HOMO-LUMO gaps are as low as 0.3 eV. The effect of doping foreign atoms to the edges of GNDs on their structures, stabilities, and HOMO-LUMO energy gaps were also examined. When foreign atoms are attached to the edge of a GND, the original unsaturated carbon atoms become saturated. As a result, both of the C-C bonds lengths and the stability of a GND increase. Furthermore, the doping effect on the HOMO-LUMO energy gap is dependent on the type of doped atoms. The doping H, F, or OH into the edge of a GND increases its HOMO-LUMO energy gap. In contrast, a Li-doped GND has a lower HOMO-LUMO energy gap than that without doping. Therefore, Li-doping can increase the electrical conductance of a GND, whereas H, F, or OH-doping decreases its conductance.