Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature.

Investigation of the optical absorption of a magnetic colloid from the thermal to the electronic time-scale regime: measurement of the free-carrier absorption cross-section

The free-carrier absorption cross-section sigma of a magnetic colloid composed of magnetite nanoparticles dispersed in oil is obtained by using the Z-scan technique in different experimental conditions of the laser beam. We show that it is possible to obtain sigma with picosecond pulsed and millisecond chopped beams with pulse frequencies smaller than about 30 Hz. For higher pulse frequencies, the heating of the colloidal system triggers the appearance of the Soret effect. This effect artificially increases the value of sigma calculated from the experimental results. The limits of the different experimental setups are discussed. (C) 2012 Optical Society of America

Chemical approaches of penicillin allergy—III Isolation of the penicillin-free carrier receptor protein (CRP) on a polymeric 7-deoxy penicillin analogue template and its role in penicillin immunogeneses in rabbit and man

Specific penicillin-carrier receptor proteins (CRP) have been isolated from the sera of penicillin allergic rabbits and human subjects in the unconjugated native state in electrophoretically homogeneous form by employing a synthetic polymeric affinity template containing the 7-deoxy analogue of penicillin G. The synthesis of the 7-deoxy analogue has been described. In this affinity system the antipenicillin-antibody is desorbed by 0·9M thiourea and the CRP in 8M urea. The CRP after incubation with penicillin is converted into the full-fledged antigen. Studies on the origin of CRP and the nature of antibody as well as comparative studies on the properties of the rabbit antibody and those of antibodies elicited by a BSA-BPO conjugate are reported.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

Simulation research of nonlinear behavior induced by the charge-carrier effect in resonant-cavity-enhanced photodetectors

In this paper, we have calculated and discussed in detail the nonlinear effect induced by three carrier effects: free-carrier absorption, bandgap filling, and bandgap shrinkage. The central wavelength of response of resonant-cavity-enhanced (RCE) photodetectors shifts according to the change of the refractive index, and the response of a given optical wavelength simultaneously changes.With an increasing As composition of ln(1-x)Ga(x)As(y)P(1-y) and the spacer thickness, the nonlinear effect increases, but the -1-dB input saturation optical power and the -1-dB saturation photocurrent decrease. Bistable-state operation occurs when the input optical power is in the proper bistable region.

Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

Nonlinear Optics and Carrier Dynamics in Nanostructured and Two-Dimensional Materials

Understanding and measuring the interaction of light with sub-wavelength structures and atomically thin materials is of critical importance for the development of next generation photonic devices.  One approach to achieve the desired optical properties in a material is to manipulate its mesoscopic structure or its composition in order to affect the properties of the light-matter interaction.  There has been tremendous recent interest in so called two-dimensional materials, consisting of only a single to a few layers of atoms arranged in a planar sheet.  These materials have demonstrated great promise as a platform for studying unique phenomena arising from the low-dimensionality of the material and for developing new types of devices based on these effects.  A thorough investigation of the optical and electronic properties of these new materials is essential to realizing their potential.  In this work we present studies that explore the nonlinear optical properties and carrier dynamics in nanoporous silicon waveguides, two-dimensional graphite (graphene), and atomically thin black phosphorus. We first present an investigation of the nonlinear response of nanoporous silicon optical waveguides using a novel pump-probe method. A two-frequency heterodyne technique is developed in order to measure the pump-induced transient change in phase and intensity in a single measurement. The experimental data reveal a characteristic material response time and temporally resolved intensity and phase behavior matching a physical model dominated by free-carrier effects that are significantly stronger and faster than those observed in traditional silicon-based waveguides.  These results shed light on the large optical nonlinearity observed in nanoporous silicon and demonstrate a new measurement technique for heterodyne pump-probe spectroscopy. Next we explore the optical properties of low-doped graphene in the terahertz spectral regime, where both intraband and interband effects play a significant role. Probing the graphene at intermediate photon energies enables the investigation of the nonlinear optical properties in the graphene as its electron system is heated by the intense pump pulse. By simultaneously measuring the reflected and transmitted terahertz light, a precise determination of the pump-induced change in absorption can be made. We observe that as the intensity of the terahertz radiation is increased, the optical properties of the graphene change from interband, semiconductor-like absorption, to a more metallic behavior with increased intraband processes. This transition reveals itself in our measurements as an increase in the terahertz transmission through the graphene at low fluence, followed by a decrease in transmission and the onset of a large, photo-induced reflection as fluence is increased.  A hybrid optical-thermodynamic model successfully describes our observations and predicts this transition will persist across mid- and far-infrared frequencies.  This study further demonstrates the important role that reflection plays since the absorption saturation intensity (an important figure of merit for graphene-based saturable absorbers) can be underestimated if only the transmitted light is considered. These findings are expected to contribute to the development of new optoelectronic devices designed to operate in the mid- and far-infrared frequency range.  Lastly we discuss recent work with black phosphorus, a two-dimensional material that has recently attracted interest due to its high mobility and direct, configurable band gap (300 meV to 2eV), depending on the number of atomic layers comprising the sample. In this work we examine the pump-induced change in optical transmission of mechanically exfoliated black phosphorus flakes using a two-color optical pump-probe measurement. The time-resolved data reveal a fast pump-induced transparency accompanied by a slower absorption that we attribute to Pauli blocking and free-carrier absorption, respectively. Polarization studies show that these effects are also highly anisotropic - underscoring the importance of crystal orientation in the design of optical devices based on this material. We conclude our discussion of black phosphorus with a study that employs this material as the active element in a photoconductive detector capable of gigahertz class detection at room temperature for mid-infrared frequencies.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

High resolution direct measurement of temperature distribution in silicon nanophotonics devices.

Following the miniaturization of photonic devices and the increase in data rates, the issues of self heating and heat removal in active nanophotonic devices should be considered and studied in more details. In this paper we use the approach of Scanning Thermal Microscopy (SThM) to obtain an image of the temperature field of a silicon micro ring resonator with sub-micron spatial resolution. The temperature rise in the device is a result of self heating which is caused by free carrier absorption in the doped silicon. The temperature is measured locally and directly using a temperature sensitive AFM probe. We show that this local temperature measurement is feasible in the photonic device despite the perturbation that is introduced by the probe. Using the above method we observed a significant self heating of about 10 degrees within the device.

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.

Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

Spectral and nonlinear optical characterization of ZnO nanocomposites

The spectral and nonlinear optical characteristics of nano ZnO and its composites are investigated. The fluorescence behaviour of nano colloids of ZnO has been studied as a function of the excitation wavelength and there is a red shift in emission peak with excitation wavelength. Apart from the observation of the reported ultra violet and green emissions, our results reveal that additional blue emissions at 420 nm and 490 nm are developed with increasing particle size. Systematic studies on nano ZnO have indicated the presence of luminescence due to excitonic emissions when excited with 255 nm as well as significant contribution from surface defect states when excited with 325 nm. In the weak confinement regime, the third-order optical susceptibility χ(3) increases with increasing particle size (R) and annealing temperature (T) and a R2 and T2.5 dependence of χ(3) is obtained for nano ZnO. ZnO nanocolloids exhibit induced absorption whereas the self assembled films of ZnO exhibit saturable absorption due to saturation of linear absorption of ZnO defect states and electronic effects. ZnO nanocomposites exhibit negative nonlinear index of refraction which can be attributed to two photon absorption followed by weak free carrier absorption. The increase of the third-order nonlinearity in the composites can be attributed to the enhancement of exciton oscillator strength. The nonlinear response of ZnO nanocomposites is wavelength dependent and switching from induced absorption to saturable absorption has been observed at resonant wavelengths. Such a change-over is related to the interplay of plasmon/exciton band bleach and optical limiting mechanisms. This study is important in identifying the spectral range and the composition over which the nonlinear material acts as an optical limiter. ZnO based nanocomposites are potential materials for enhanced and tunable light emission and for the development of nonlinear optical devices with a relatively small optical limiting threshold.

Spectral and nonlinear optical characteristics of nanocomposites of ZnO-CdS

In this article, we present the spectral and nonlinear optical properties of ZnO–CdS nanocomposites prepared by colloidal chemical synthesis. The optical band gap (Eg) of the material is tunable between 2.62 and 3.84 eV. The emission peaks of ZnO–CdS nanocomposites change from 385 to 520 nm almost in proportion to changes in Eg. It is possible to obtain a desired luminescence color from UV to green by simply adjusting the composition. The nonlinear optical response of these samples is studied by using nanosecond laser pulses from a tunable laser at the excitonic resonance and off-resonance wavelengths. The nonlinear response is wavelength dependent, and switching from saturable absorption (SA) to reverse SA (RSA) has been observed for samples as the excitation wavelength changes from the excitonic resonance to off-resonance wavelengths. Such a changeover in the sign of the nonlinearity of ZnO–CdS nanocomposites is related to the interplay of exciton bleach and optical limiting mechanisms. The ZnO–CdS nanocomposites show self-defocusing nonlinearity and good nonlinear absorption behavior at off-resonant wavelengths. The nonlinear refractive index and the nonlinear absorption increase with increasing CdS volume fraction at 532 nm. The observed nonlinear absorption is attributed to two photon absorption followed by weak free carrier absorption. The enhancement of the third-order nonlinearity in the composites can be attributed to the concentration of exciton oscillator strength. This study is important in identifying the spectral range and composition over which the nonlinear material acts as a RSA based optical limiter. ZnO–CdS is a potential nanocomposite material for the tunable light emission and for the development of nonlinear optical devices with a relatively small limiting threshold.

Nonlinear optical characteristics of nanocomposites of ZnO–TiO2–SiO2

In this article we present the nonlinear optical properties of ZnO–TiO2–SiO2 nanocomposites prepared by colloidal chemical synthesis. Nonlinear optical response of these samples is studied using nanosecond laser pulses at an off-resonance wavelength. The nonlinearity of the silica colloid is low and its nonlinear response can be improved by making composites with ZnO and TiO2. These nanocomposites show self-defocusing nonlinearity and good nonlinear absorption behaviour. The nonlinear refractive index and the nonlinear absorption increases with increasing ZnO volume fraction. The observed nonlinear absorption is explained by two photon absorption followed by weak free carrier absorption and nonlinear scattering. ZnO–TiO2–SiO2 is a potential nanocomposite material for the development of nonlinear optical devices with a relatively small limiting threshold.