1000 resultados para Fotoluminescência.Campo cristalino
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The experiment introduces the undergraduate students to the crystal field theory. The electronic spectra of the octahedral complexes of [Ni(L)n]2+ (L = H2O, dmso, NH3 and en) obtained in the experiment are used to calculate 10Dq and B parameters. The experiment shows how the parameters can be calculated and correlated with the nature of the ligands and the field intensities produced.
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We describe herein the synthesis and characterization of the complexes KNiF3, [Ni(en)3]I2, [Ni(en)3]Cl2, [Ni(acac)2(H2O)2], [Ni(en)2(H2O)2]Cl2 and [Ni(NH3)6](BF4)2 (en = ethylenediamine, acac- = acetylacetonate) performed in the inorganic synthesis major course at the Chemistry Institute of UFRGS (Universidade Federal do Rio Grande do Sul). The compounds were characterized by infrared and electronic spectroscopy and the electrolytic conductivity was measured. The parameters 10Dq and B were obtained from the electronic spectra and the nefelauxetic and spectrochemical series were determined. The obtained spectrochemical series was F- < acac- < NH3 < en and the nefeulaxetic series was en < NH3 < acac- < F-.
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Ceramic powders based on Zn3Ga2Ge2O10: Cr3+ X% (X = 0.0; 0.5; 0.75; 1.0) were synthesized by solid-state reaction method. The gallium-zinc germanate doped with chromium presents an interesting property of phosphorescence, that means, it is capable of emitting light when excited by a source of radiation, and such emission remains for some time after stopping the source. For this reason, these materials can be widely applied in night-vision surveillance, (through the use of solar energy, for example), electronic devices screen, emergency routes signals, control panels indicators in dark environments, etc. In this job were considered different amounts of dopant in order to perform a comparison of structural and photoluminescent properties. For that, some analyses were performed on samples, such as XRD, FT-Raman, SEM, UV-vis and photoluminescence measurements (PL). Such analysis allowed to infer that the presence of chromium results in no phase transformation, so that the four compositions have the same set of phases: cubic, rhombohedral and hexagonal. Although the structure was not changed, chromium influences other properties / characteristics of these materials. Examples are: increase of band-gap, decrease of average particle size, small changes in binding energy checked by Raman and especially the increase of photoluminescent property. The chromium ions have great ease in replacing gallium ions in octahedral sites, resulting in emission of light with a wavelength of about 700 nm (infrared region), which is justified by the spin-forbidden 2E 4A2 transition. In other words, chromium is a favorable luminescent center, acting as a trap in the crystal structure, since it imprisons the excitation energy easily and releases it gradually, allowing the phosphorescence. It was observed that the composition ... (Complete abastract click electronic access below)
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Ceramic powders based on Zn3Ga2Ge2O10: Cr3+ X% (X = 0.0; 0.5; 0.75; 1.0) were synthesized by solid-state reaction method. The gallium-zinc germanate doped with chromium presents an interesting property of phosphorescence, that means, it is capable of emitting light when excited by a source of radiation, and such emission remains for some time after stopping the source. For this reason, these materials can be widely applied in night-vision surveillance, (through the use of solar energy, for example), electronic devices screen, emergency routes signals, control panels indicators in dark environments, etc. In this job were considered different amounts of dopant in order to perform a comparison of structural and photoluminescent properties. For that, some analyses were performed on samples, such as XRD, FT-Raman, SEM, UV-vis and photoluminescence measurements (PL). Such analysis allowed to infer that the presence of chromium results in no phase transformation, so that the four compositions have the same set of phases: cubic, rhombohedral and hexagonal. Although the structure was not changed, chromium influences other properties / characteristics of these materials. Examples are: increase of band-gap, decrease of average particle size, small changes in binding energy checked by Raman and especially the increase of photoluminescent property. The chromium ions have great ease in replacing gallium ions in octahedral sites, resulting in emission of light with a wavelength of about 700 nm (infrared region), which is justified by the spin-forbidden 2E 4A2 transition. In other words, chromium is a favorable luminescent center, acting as a trap in the crystal structure, since it imprisons the excitation energy easily and releases it gradually, allowing the phosphorescence. It was observed that the composition ... (Complete abastract click electronic access below)
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We present the results of electrical resistivity, magnetic susceptibility, specific heat and x-ray absorption spectroscopy measurements in Tb1−xYxRhIn5 (x = 0.00, 0.15, 0.4.0, 0.50 e 0.70) single crystals. Tb1−xYxRhIn5 is an antiferromagnetic AFM compound with ordering temperature TN ≈ 46 K, the higher TN within the RRhIn5 serie (R : rare earth). We evaluate the physical properties evolution and the supression of the AFM state considering doping and Crystalline Electric Field (CEF) effects on magnetic exchange interaction between Tb3+ magnetic ions. CEF acts like a perturbation potential, breaking the (2J + 1) multiplet s degeneracy. Also, we studied linear-polarization-dependent soft x-ray absorption at Tb M4 and M5 edges to validate X-ray Absorption Spectroscopy as a complementary technique in determining the rare earth CEF ground state. Samples were grown by the indium excess flux and the experimental data (magnetic susceptibility and specific heat) were adjusted with a mean field model that takes account magnetic exchange interaction between first neighbors and CEF effects. XAS experiments were carried on Total Electron Yield mode at Laborat´onio Nacional de Luz S´ıncrotron, Campinas. We measured X-ray absorption at Tb M4,5 edges with incident polarized X-ray beam parallel and perpendicular to c-axis (E || c e E ⊥ c). The mean field model simulates the mean behavior of the whole system and, due to many independent parameters, gives a non unique CEF scheme. XAS is site- and elemental- specific technique and gained the scientific community s attention as complementary technique in determining CEF ground state in rare earth based compounds. In this work we wil discuss the non conclusive results of XAS technique in TbRhIn5 compounds.
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Dissertação para obtenção do Grau de Mestre em Engenharia de Materiais
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Pós-graduação em Química - IQ
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En los últimos años la tecnología láser se ha convertido en una herramienta imprescindible en la fabricación de dispositivos fotovoltaicos, ayudando a la consecución de dos objetivos claves para que esta opción energética se convierta en una alternativa viable: reducción de costes de fabricación y aumento de eficiencia de dispositivo. Dentro de las tecnologías fotovoltaicas, las basadas en silicio cristalino (c-Si) siguen siendo las dominantes en el mercado, y en la actualidad los esfuerzos científicos en este campo se encaminan fundamentalmente a conseguir células de mayor eficiencia a un menor coste encontrándose, como se comentaba anteriormente, que gran parte de las soluciones pueden venir de la mano de una mayor utilización de tecnología láser en la fabricación de los mismos. En este contexto, esta Tesis hace un estudio completo y desarrolla, hasta su aplicación en dispositivo final, tres procesos láser específicos para la optimización de dispositivos fotovoltaicos de alta eficiencia basados en silicio. Dichos procesos tienen como finalidad la mejora de los contactos frontal y posterior de células fotovoltaicas basadas en c-Si con vistas a mejorar su eficiencia eléctrica y reducir el coste de producción de las mismas. En concreto, para el contacto frontal se han desarrollado soluciones innovadoras basadas en el empleo de tecnología láser en la metalización y en la fabricación de emisores selectivos puntuales basados en técnicas de dopado con láser, mientras que para el contacto posterior se ha trabajado en el desarrollo de procesos de contacto puntual con láser para la mejora de la pasivación del dispositivo. La consecución de dichos objetivos ha llevado aparejado el alcanzar una serie de hitos que se resumen continuación: - Entender el impacto de la interacción del láser con los distintos materiales empleados en el dispositivo y su influencia sobre las prestaciones del mismo, identificando los efectos dañinos e intentar mitigarlos en lo posible. - Desarrollar procesos láser que sean compatibles con los dispositivos que admiten poca afectación térmica en el proceso de fabricación (procesos a baja temperatura), como los dispositivos de heterounión. - Desarrollar de forma concreta procesos, completamente parametrizados, de definición de dopado selectivo con láser, contactos puntuales con láser y metalización mediante técnicas de transferencia de material inducida por láser. - Definir tales procesos de forma que reduzcan la complejidad de la fabricación del dispositivo y que sean de fácil integración en una línea de producción. - Mejorar las técnicas de caracterización empleadas para verificar la calidad de los procesos, para lo que ha sido necesario adaptar específicamente técnicas de caracterización de considerable complejidad. - Demostrar su viabilidad en dispositivo final. Como se detalla en el trabajo, la consecución de estos hitos en el marco de desarrollo de esta Tesis ha permitido contribuir a la fabricación de los primeros dispositivos fotovoltaicos en España que incorporan estos conceptos avanzados y, en el caso de la tecnología de dopado con láser, ha permitido hacer avances completamente novedosos a nivel mundial. Asimismo los conceptos propuestos de metalización con láser abren vías, completamente originales, para la mejora de los dispositivos considerados. Por último decir que este trabajo ha sido posible por una colaboración muy estrecha entre el Centro Láser de la UPM, en el que la autora desarrolla su labor, y el Grupo de Investigación en Micro y Nanotecnologías de la Universidad Politécnica de Cataluña, encargado de la preparación y puesta a punto de las muestras y del desarrollo de algunos procesos láser para comparación. También cabe destacar la contribución de del Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, CIEMAT, en la preparación de experimentos específicos de gran importancia en el desarrollo del trabajo. Dichas colaboraciones se han desarrollado en el marco de varios proyectos, tales como el proyecto singular estratégico PSE-MICROSIL08 (PSE-iv 120000-2006-6), el proyecto INNDISOL (IPT-420000-2010-6), ambos financiados por el Fondo Europeo de Desarrollo Regional FEDER (UE) “Una manera de hacer Europa” y el MICINN, y el proyecto del Plan Nacional AMIC (ENE2010-21384-C04-02), cuya financiación ha permitido en gran parte llevar a término este trabajo. v ABSTRACT. Last years lasers have become a fundamental tool in the photovoltaic (PV) industry, helping this technology to achieve two major goals: cost reduction and efficiency improvement. Among the present PV technologies, crystalline silicon (c-Si) maintains a clear market supremacy and, in this particular field, the technological efforts are focussing into the improvement of the device efficiency using different approaches (reducing for instance the electrical or optical losses in the device) and the cost reduction in the device fabrication (using less silicon in the final device or implementing more cost effective production steps). In both approaches lasers appear ideally suited tools to achieve the desired success. In this context, this work makes a comprehensive study and develops, until their implementation in a final device, three specific laser processes designed for the optimization of high efficiency PV devices based in c-Si. Those processes are intended to improve the front and back contact of the considered solar cells in order to reduce the production costs and to improve the device efficiency. In particular, to improve the front contact, this work has developed innovative solutions using lasers as fundamental processing tools to metalize, using laser induced forward transfer techniques, and to create local selective emitters by means of laser doping techniques. On the other side, and for the back contact, and approached based in the optimization of standard laser fired contact formation has been envisaged. To achieve these fundamental goals, a number of milestones have been reached in the development of this work, namely: - To understand the basics of the laser-matter interaction physics in the considered processes, in order to preserve the functionality of the irradiated materials. - To develop laser processes fully compatible with low temperature device concepts (as it is the case of heterojunction solar cells). - In particular, to parameterize completely processes of laser doping, laser fired contacts and metallization via laser transfer of material. - To define such a processes in such a way that their final industrial implementation could be a real option. - To improve widely used characterization techniques in order to be applied to the study of these particular processes. - To probe their viability in a final PV device. Finally, the achievement of these milestones has brought as a consequence the fabrication of the first devices in Spain incorporating these concepts. In particular, the developments achieved in laser doping, are relevant not only for the Spanish science but in a general international context, with the introduction of really innovative concepts as local selective emitters. Finally, the advances reached in the laser metallization approached presented in this work open the door to future developments, fully innovative, in the field of PV industrial metallization techniques. This work was made possible by a very close collaboration between the Laser Center of the UPM, in which the author develops his work, and the Research Group of Micro y Nanotecnology of the Universidad Politécnica de Cataluña, in charge of the preparation and development of samples and the assessment of some laser processes for comparison. As well is important to remark the collaboration of the Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, CIEMAT, in the preparation of specific experiments of great importance in the development of the work. These collaborations have been developed within the framework of various projects such as the PSE-MICROSIL08 (PSE-120000-2006-6), the project INNDISOL (IPT-420000-2010-6), both funded by the Fondo Europeo de Desarrollo Regional FEDER (UE) “Una manera de hacer Europa” and the MICINN, and the project AMIC (ENE2010-21384-C04-02), whose funding has largely allowed to complete this work.
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Mode of access: Internet.
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The field activities are essential for the education of a good taxonomist. The most common problems found in field activities are: a) large number of students, b) heterogeneous educational background and unlevelled knowledge of the participants, c) repetitions and tendency of collecting the more evidents life-forms. The causes and consequences of such problems are discussed herein. The proposed solution is a methodology, based on many years of experience in field courses for undergraduate and graduate courses. Topics about the ideal number of participants, area of coverage, period of activity, division of work and the necessary material and equipment are discussed. According to the number of species collected at the same place, this methodology may result in a list of local species with precise information about the life-forms, habitat, common names, frequency, uses, phenology and further information in this kind of work. The results of the aplication of this metodology in a field course held in the region of Ubatuba-SP are presented.
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Purpose: To analyze the effects of 100 mg of sildenafil citrate (Viagra®) on the retrobulbar circulation and visual field. Methods: A double masked, placebo controlled study was conducted in 10 males with a mean age of 27.7 + 5.68 years. The right eye of each volunteer underwent orbital color Doppler imaging and automated perimetry (Humphrey, program 30-2, Full-Threshold Strategy) at 3 occasions: baseline, 1 hour after placebo and 1 hour after 100 mg of sildenafil. The foveal threshold and the mean deviation (MD) were analyzed by automated perimetry on the three occasions. Color Doppler imaging allowed the measurement of the peak systolic velocity (PSV), end diastolic velocity (EDV) and Pourcelot index (PI) in the central retinal artery and ophthalmic artery. Results: The foveal threshold and the mean deviation did not show a significant change following the administration of sildenafil. The ophthalmic artery peak systolic velocity and end diastolic velocity significantly increased after the administration of sildenafil (p<0.001). The hemodynamic parameters in the central retinal artery and the ophthalmic artery PI did not significantly change. Conclusions: Sildefanil citrate increased the blood flow velocities in the ophthalmic artery in normal subjects, with no significant changes in the foveal threshold and mean deviation in the automated perimetry.
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Universidade Estadual de Campinas . Faculdade de Educação Física
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Universidade Estadual de Campinas . Faculdade de Educação Física
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Universidade Estadual de Campinas . Faculdade de Educação Física