Flash Memory Cells Reliability Parameters Investigation

The present work is a part of the large project with purpose to qualify the Flash memory for automotive application using a standardized test and measurement flow. High memory reliability and data retention are the most critical parameters in this application. The current work covers the functional tests and data retention test. The purpose of the data retention test is to obtain the data retention parameters of the designed memory, i.e. the maximum time of information storage at specified conditions without critical charge leakage. For this purpose the charge leakage from the cells, which results in decrease of cells threshold voltage, was measured after a long-time hightemperature treatment at several temperatures. The amount of lost charge for each temperature was used to calculate the Arrhenius constant and activation energy for the discharge process. With this data, the discharge of the cells at different temperatures during long time can be predicted and the probability of data loss after years can be calculated. The memory chips, investigated in this work, were 0.035 μm CMOS Flash memory testchips, designed for further use in the Systems-on-Chips for automotive electronics.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Optimizing storage and memory systems for energy and performance

Electrical energy is an essential resource for the modern world. Unfortunately, its price has almost doubled in the last decade. Furthermore, energy production is also currently one of the primary sources of pollution. These concerns are becoming more important in data-centers. As more computational power is required to serve hundreds of millions of users, bigger data-centers are becoming necessary. This results in higher electrical energy consumption. Of all the energy used in data-centers, including power distribution units, lights, and cooling, computer hardware consumes as much as 80%. Consequently, there is opportunity to make data-centers more energy efficient by designing systems with lower energy footprint. Consuming less energy is critical not only in data-centers. It is also important in mobile devices where battery-based energy is a scarce resource. Reducing the energy consumption of these devices will allow them to last longer and re-charge less frequently. Saving energy in computer systems is a challenging problem. Improving a system's energy efficiency usually comes at the cost of compromises in other areas such as performance or reliability. In the case of secondary storage, for example, spinning-down the disks to save energy can incur high latencies if they are accessed while in this state. The challenge is to be able to increase the energy efficiency while keeping the system as reliable and responsive as before. This thesis tackles the problem of improving energy efficiency in existing systems while reducing the impact on performance. First, we propose a new technique to achieve fine grained energy proportionality in multi-disk systems; Second, we design and implement an energy-efficient cache system using flash memory that increases disk idleness to save energy; Finally, we identify and explore solutions for the page fetch-before-update problem in caching systems that can: (a) control better I/O traffic to secondary storage and (b) provide critical performance improvement for energy efficient systems.

Psychomotor retardation in depression: bradykinesia or paucity of movement?

Objectives: Psychomotor retardation is part of Major Depression (MD) diagnosis criteria and has been assimilated to bradykinesia, even though there is a clear lack of objective measurement of motor activity in MD. We conducted a study to evaluate bradykinesia, posture and gait parameters in MD patients with an ambulatory system, allowing continuous motor measurements. Methods: Patients with DSM-IV MD and healthy controls matched for age and sex were asked to carry on with their usual activities while being recorded for 6 hours by a wireless autonomous ambulatory system, containing miniature gyroscopes, data-logger, battery and flash memory. allowing continuous recording of upper limbs movements (speed, amplitude and activity (% of time with movement)), posture (% of time standing, walking, lying or sitting) and gait parameters (speed, cadence, stance, double support, stride). Results: Hands activity was significantly lower in depressed patients, as compared to controls (MD: 40%, controls: 60%; p<0.05). Speed of hand movements (p= 0.13) and their amplitude (p=0.71) were similar to controls. MD patients had a trend to spend more time lying or sitting than controls (p=0.06) but did not differ in terms of any gait parameters. Conclusion: Patients with MD displayed less hand movements than controls and tended to spend more time lying or sitting over 6 hours, but did not differ in terms of speed and amplitude of movement, nor in gait parameters. These results suggest that psychomotor retardation classically described in MD might be the expression of a paucity of movement rather than a bradykinesia as observed in parkinsonism and might involved different (nondopaminergic) mechanisms.

Registrador de sinais analógicos usando MP3 player portátil com entrada para voz

Neste trabalho se propôs a utilização do MP3 player portátil para gravação de sinal nãoáudio em sua memória, utilizando-se seu recurso para gravação de voz. Para avaliar a proposta, retirou-se o microfone de eletreto do MP3 player e em seu lugar injetou-se um sinal de FM, com portadora de áudio de 1200 Hz modulada pelo sinal de interesse. O sinal é gravado no aparelho em arquivo no formato WAV. Sua recuperação se fez usando um demodulador de FM a PLL cuja entrada é o sinal de FM captado nos terminais da bobina do fone de ouvido do MP3 player. Nos testes, usou-se sinal senoidal e sinal de eletrocardiograma. Embora a qualidade dos sinais de baixa freqüência precise ser melhorada, em geral os resultados apontam para a viabilidade da proposta. Fazem-se sugestões para melhorias e extensões do trabalho.

An Evaluation of Compression Schemes for Wireless Networks

Data gathering, either for event recognition or for monitoring applications is the primary intention for sensor network deployments. In many cases, data is acquired periodically and autonomously, and simply logged onto secondary storage (e.g. flash memory) either for delayed offline analysis or for on demand burst transfer. Moreover, operational data such as connectivity information, node and network state is typically kept as well. Naturally, measurement and/or connectivity logging comes at a cost. Space for doing so is limited. Finding a good representative model for the data and providing clever coding of information, thus data compression, may be a means to use the available space to its best. In this paper, we explore the design space for data compression for wireless sensor and mesh networks by profiling common, publicly available algorithms. Several goals such as a low overhead in terms of utilized memory and compression time as well as a decent compression ratio have to be well balanced in order to find a simple, yet effective compression scheme.

Acondicionamiento y procesado de señales mediante bus CAN en vehículos monoplaza

En este proyecto se ha diseñado un sistema de adquisición y uso compartido de datos orientado a la implantación en un vehículo monoplaza de Formula SAE. Más concretamente, se encarga de recoger la información proporcionada por cuatro sensores infrarrojos de temperatura que sondearán constantemente la temperatura a la que se encuentran las ruedas del vehículo. La información, recogida en una memoria de almacenamiento masivo, se compartirá con otros dispositivos mediante un bus común. Los sensores empleados para generar la información los proporciona Melexis. Dichos sensores permiten estar todos simultáneamente conectados en un bus común gracias a su electrónica interna. Mediante el bus I2C irán conectados los cuatro sensores de nuestra aplicación (uno por cada rueda) permitiéndose añadir a posteriori más sensores o incluso otros elementos que permitan la comunicación por este tipo de bus I2C. La gestión de las tareas se realiza mediante el microcontrolador DSPIC33FJ256GP710-I/PF proporcionado por Microchip. Este es un microcontrolador complejo, por lo que para nuestra aplicación desaprovecharemos parte de su potencial. En nuestra tarjeta ha sido solamente añadido el uso de los dos I2C (uno para la tarjeta SD y el otro para los sensores), el módulo ECAN1 (para las comunicaciones por bus CAN), el módulo SPI (para acceder a una memoria Flash), 4 ADCs (para posibles mediciones) y 2 entradas de interrupción (para posible interactuación con el usuario), a parte de los recursos internos necesarios. En este proyecto se realiza tanto el desarrollo de una tarjeta de circuito impreso dedicada a resolver la funcionalidad requerida, así como su programación a través del entorno de programación facilitado por Microchip, el ICD2 Programmer. In this project, an acquisition and sharing system of data, which is oriented to be installed in a Formula SAE single-seater vehicle, has been designed. Concretely, it is responsible for getting the information supplied by four IR temperature sensors that monitor the wheels temperature. The information, which is loaded in a massive storage memory, will be shared with other devices by means of a common bus. The sensors used to generate the information are supplied by Melexis. Such specific sensors let that all they can be connected to the same bus at the same time due to their internal electronic. The four sensors will be connected through an I2C bus, one for each wheel, although we could add later more sensors or even other devices that they were able to let the I2C communication. Tasks management will be done by means of the DSPIC33FJ256GP710-I/PF microcontroller, which will be supplied by Microchip. This is a complex microcontroller, so, in our application we waste off a part of its potential. In our PCB has only been incorporated the use of the two I2C (one for the SD card and the other for the sensors), the ECAN module (to communicate devices), the SPI module (to access to the Flash memory), 4 ADC’s (for possible measurements) and 2 interrupt inputs (for possible inter-action with the user), a part of the necessary internal resources. This project aims the PCB development dedicated to solve the requested functionality and its programming through the programming environment provided by Microchip (the ICD2 programmer).

Sistema de adquisición de datos compacto para medidas de extensiometría y posición

En este proyecto se trata el diseño y construcción de un sistema de adquisición de datos compacto y de bajo coste para medidas de extensiometría y posición. Dicho sistema irá embarcado en una bicicleta de montaña con el fin de medir determinados parámetros. Estos parámetros son a) Elongación de las suspensiones, b) Deformación en el cuadro. Para la medida de elongación de las suspensiones se diseña y construye un sensor casero de bajo coste basado en una transparencia y un par de diodos fotoemisor y fotorreceptor infrarrojos. Se imprime un gradiente y se emplean dos tubos coaxiales de PVC. La medida de extensiometría se realiza con galgas extensiométricas, puentes de Wheatstone y amplificador de instrumentación. Las muestras se digitalizan con el ADC del microcontrolador C8051F020 de la casa Silabs, que se usa en una placa de desarrollo, y se almacenan en una memoria flash serie. Se desarrolla un software para PC con LabView para poder recibir, procesar y visualizar las muestras obtenidas de los distintos canales con el fin de analizarlas. Se obtienen conclusiones de los resultados de pruebas básicas. ABSTRACT On this project, the design and construction of a compact, low cost, data adquisition system for strain and position measurements is dealt with. Such system will be embedded on a bicycle in order to measure certain parameters. These are a) Suspension elongation, b) Frame deformation. For suspension elongation measurements, a homemade, low cost sensor based on a photoemitter-photoreceiver diode couple and a transparent sheet is designed and built. A gradient is printed in the transparent sheet, and two coaxial PVC pipes are used. Strain measurements are carried out by means of a strain gage, Wheatstone bridges and an instrumentation amplifier. Samples are digitized with Silabs’ C8051F020’s ADC, which is used in a development board, and are stored in a serial flash memory. Software for PC on LabView is developed in order to receive, process and visualize the obtained samples from each channel in order to analyze them. Results are obtained from basic tests.

Fabrication and Pseudo-Analog Characteristics of Ta2O5 -Based ReRAM Cell

Memristori on yksi elektroniikan peruskomponenteista vastuksen, kondensaattorin ja kelan lisäksi. Se on passiivinen komponentti, jonka teorian kehitti Leon Chua vuonna 1971. Kesti kuitenkin yli kolmekymmentä vuotta ennen kuin teoria pystyttiin yhdistämään kokeellisiin tuloksiin. Vuonna 2008 Hewlett Packard julkaisi artikkelin, jossa he väittivät valmistaneensa ensimmäisen toimivan memristorin. Memristori eli muistivastus on resistiivinen komponentti, jonka vastusarvoa pystytään muuttamaan. Nimens mukaisesti memristori kykenee myös säilyttämään vastusarvonsa ilman jatkuvaa virtaa ja jännitettä. Tyypillisesti memristorilla on vähintään kaksi vastusarvoa, joista kumpikin pystytään valitsemaan syöttämällä komponentille jännitettä tai virtaa. Tämän vuoksi memristoreita kutsutaankin usein resistiivisiksi kytkimiksi. Resistiivisiä kytkimiä tutkitaan nykyään paljon erityisesti niiden mahdollistaman muistiteknologian takia. Resistiivisistä kytkimistä rakennettua muistia kutsutaan ReRAM-muistiksi (lyhenne sanoista resistive random access memory). ReRAM-muisti on Flash-muistin tapaan haihtumaton muisti, jota voidaan sähköisesti ohjelmoida tai tyhjentää. Flash-muistia käytetään tällä hetkellä esimerkiksi muistitikuissa. ReRAM-muisti mahdollistaa kuitenkin nopeamman ja vähävirtaiseman toiminnan Flashiin verrattuna, joten se on tulevaisuudessa varteenotettava kilpailija markkinoilla. ReRAM-muisti mahdollistaa myös useammin bitin tallentamisen yhteen muistisoluun binäärisen (”0” tai ”1”) toiminnan sijaan. Tyypillisesti ReRAM-muistisolulla on kaksi rajoittavaa vastusarvoa, mutta näiden kahden tilan välille pystytään mahdollisesti ohjelmoimaan useampia tiloja. Muistisoluja voidaan kutsua analogisiksi, jos tilojen määrää ei ole rajoitettu. Analogisilla muistisoluilla olisi mahdollista rakentaa tehokkaasti esimerkiksi neuroverkkoja. Neuroverkoilla pyritään mallintamaan aivojen toimintaa ja suorittamaan tehtäviä, jotka ovat tyypillisesti vaikeita perinteisille tietokoneohjelmille. Neuroverkkoja käytetään esimerkiksi puheentunnistuksessa tai tekoälytoteutuksissa. Tässä diplomityössä tarkastellaan Ta2O5 -perustuvan ReRAM-muistisolun analogista toimintaa pitäen mielessä soveltuvuus neuroverkkoihin. ReRAM-muistisolun valmistus ja mittaustulokset käydään läpi. Muistisolun toiminta on harvoin täysin analogista, koska kahden rajoittavan vastusarvon välillä on usein rajattu määrä tiloja. Tämän vuoksi toimintaa kutsutaan pseudoanalogiseksi. Mittaustulokset osoittavat, että yksittäinen ReRAM-muistisolu kykenee binääriseen toimintaan hyvin. Joiltain osin yksittäinen solu kykenee tallentamaan useampia tiloja, mutta vastusarvoissa on peräkkäisten ohjelmointisyklien välillä suurta vaihtelevuutta, joka hankaloittaa tulkintaa. Valmistettu ReRAM-muistisolu ei sellaisenaan kykene toimimaan pseudoanalogisena muistina, vaan se vaati rinnalleen virtaa rajoittavan komponentin. Myös valmistusprosessin kehittäminen vähentäisi yksittäisen solun toiminnassa esiintyvää varianssia, jolloin sen toiminta muistuttaisi enemmän pseudoanalogista muistia.

Simulador d'un processador amb Adobe Flash Player

Aquest Projecte pretén crear un simulador d’una màquina algorísmica, de caràcter didàctic amb Adobe Flash CS3 per a reproduir-lo amb Adobe Flash Lite Player, que és la versió per a dispositius mòbils. Simularà el comportament de la màquina algorísmica anomenada FEMTOPROC, que és capaç d’interpretar 4 instruccions molt senzilles: ADD, AND, NOT i JZ (jump if zero). Les diferents instruccions introduïdes que compondran un programa seran emmagatzemades en una memòria de 64 posicions de 8 bits cadascuna i hi haurà un Banc de Registres amb 8 registres de 8 bits, que es podrà inicialitzar al començament de la simulació.

Flavones from Erythrina falcata are modulators of fear memory

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Analysis of charge-transport properties in GST materials for next generation phase-change memory devices

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and scalability. This alternative non-volatile memory technology, which uses resistance contrast in phase-change materials, offers more density relative to DRAM, and can help to increase main memory capacity of future systems while remaining within the cost and power constraints. Chalcogenide materials can suitably be exploited for manufacturing phase-change memory devices. Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. Crystalline GST exhibits an almost Ohmic I(V) curve. In contrast amorphous GST shows a high resistance at low biases while, above a threshold voltage, a transition takes place from a highly resistive to a conductive state, characterized by a negative differential-resistance behavior. A clear and complete understanding of the threshold behavior of the amorphous phase is fundamental for exploiting such materials in the fabrication of innovative nonvolatile memories. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron–electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.

The Intrahippocampal Infusion Of Crotamine From Crotalus Durissus Terrificus Venom Enhances Memory Persistence In Rats.

Previous research has shown that crotamine, a toxin isolated from the venom of Crotalus durissus terrificus, induces the release of acetylcholine and dopamine in the central nervous system of rats. Particularly, these neurotransmitters are important modulators of memory processes. Therefore, in this study we investigated the effects of crotamine infusion on persistence of memory in rats. We verified that the intrahippocampal infusion of crotamine (1 μg/μl; 1 μl/side) improved the persistence of object recognition and aversive memory. By other side, the intrahippocampal infusion of the toxin did not alter locomotor and exploratory activities, anxiety or pain threshold. These results demonstrate a future prospect of using crotamine as potential pharmacological tool to treat diseases involving memory impairment, although it is still necessary more researches to better elucidate the crotamine effects on hippocampus and memory.

Metabolic Memory Of ß-cells Controls Insulin Secretion And Is Mediated By Camkii.

Ca(2+)/calmodulin-dependent protein kinase II (CaMKII) functions both in regulation of insulin secretion and neurotransmitter release through common downstream mediators. Therefore, we hypothesized that pancreatic ß-cells acquire and store the information contained in calcium pulses as a form of metabolic memory, just as neurons store cognitive information. To test this hypothesis, we developed a novel paradigm of pulsed exposure of ß-cells to intervals of high glucose, followed by a 24-h consolidation period to eliminate any acute metabolic effects. Strikingly, ß-cells exposed to this high-glucose pulse paradigm exhibited significantly stronger insulin secretion. This metabolic memory was entirely dependent on CaMKII. Metabolic memory was reflected on the protein level by increased expression of proteins involved in glucose sensing and Ca(2+)-dependent vesicle secretion, and by elevated levels of the key ß-cell transcription factor MAFA. In summary, like neurons, human and mouse ß-cells are able to acquire and retrieve information.