Electric field control of magnetism in hydrid ferromagnetic / ferroelectric materials

Väisälän palkinnon 2012 saaja.

Electronic structure of Pb1-xLaxTiO3 ferroelectric materials from Ti 2p and O 1s soft x-ray absorption spectroscopy

The electronic structure of Pb1-xLaxTiO3 (PLT) compounds for x ranging from 0 to 30 at. % of La is investigated by means of soft x-ray absorption near edge structure (XANES) at the Ti L-3,L-2 and O K edges. The greatest modification in the structure of the Ti 2p XANES spectra of the PLT compounds is observed in the region of the high energy peak of the L-3 edge (e(g) states), which exhibits a splitting in the undoped sample. As the amount of lanthanum increases, this splitting becomes less pronounced. This modification is interpreted as a decrease in the degree of disorder of titanium atoms, which is correlated to the substitution of Pb by La atoms. The structural changes observed at the low energy peaks of the O K-edge XANES spectra of the PLT compounds may be interpreted in terms of hybridization between O 2p, Ti 3d, and Pb 6p orbitals. A decrease in the degree of hybridization observed as Pb atoms are replaced by La atoms may be related to the differences in the ferroelectric properties observed between x=0.0 and x=0.30 compounds. (c) 2006 American Institute of Physics.

Ferroelectric materials with photoluminescent properties

Amorphous LiNbO3 thin films processed by polymeric precursor method exhibited efficient luminescence at room temperature. The films were deposited on silicon substrates and treated at 200degreesC for different times. The photoluminescence emission yield decreases with the increase of the treatment time and disappears for crystalline films. A theoretical-experimental study was performed on amorphous and crystalline materials to understand the influence of the defects on the photoluminescence properties. The theoretical band gap obtained by the difference of energy between the HOMO and LUMO levels is larger for crystalline structure when compared with amorphous material. This result, which is in agreement with experimental band gaps obtained from optical measurements, revealed the emergence of new electronic levels for the amorphous material, which are localized in the wide band gap of the crystalline structure. These new electronic levels may explain the photoluminescence observed at room temperature for LiNbO3 amorphous films.

On the equivalence of the mechanisms governing switching and hysteresis phenomena

The nucleation and growth model, which is usually applied to switching phenomena, is adapted for explaining surface potential measurements on the P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) copolymer obtained in a constant current corona triode. It is shown that the growth is one-dimensional and that the nucleation rate is unimportant, probably because surface potential measurements take much longer than the switching ones. The surface potential data can therefore be accounted for by a growth model in which the velocity of growth varies exponentially with the electric field. Since hysteresis loops can be obtained from surface potential measurements, it is suggested that similar mechanisms can be used when treating switching and hysteresis phenomena, provided that account is taken of the difference in the time scale of the measurements.

Non-linear modelling of microwave devices embedding nano-ferroelectric materials for real-time reconfigurable transmitarray

In this thesis work a nonlinear model for Interdigitated Capacitors (IDCs) based on ferroelectric materials, is proposed. Through the properties of materials such as Hafnium-Zirconium Oxide (HfZrO2), it is possible to realize tunable radiofrequency (RF) circuits. In particular, the model proposed in this thesis describes the use of an IDC, realized on a High-Resistivity silicon substrate, as a phase shifter for beam-steering applications. The model is obtained starting from already present experimental measurements, through which it is possible to identify a circuit model. The model is tested for both low power values and other power values using Harmonic Balance simulations, which show an excellent convergence of the model up to 40 dBm of input power. Furthermore, an array composed by two patches operating both at 2.55 GHz, which exploits the tunable properties of the HfZrO-based IDC is proposed. At 0dBm the model shows a 47° phase shift with polarization -1 V and 1 V which leads to a 11° steering of the main lobe of the array.

Ferroelectric switching and dielectric response of P(VDF-TrFE)/PMMA blends

The ferroelectric and the dielectric behaviors of binary blends formed by an equi-molar Poly(vinylidene fluoride trifluoroethylene) copolymer [P(VDF-TrFE)] and Poly(methyl methacrylate) [PMMA] were investigated, for several PMMA compositions. For 40 wt.% or more PMMA contents, the blends are completely amorphous. Below this value, they crystallize in the usual Cm2m polar structure of P(VDF-TrFE). The ferroelectric switching characteristics and the dielectric response of the blends demonstrate the formation of dynamically stable ferroelectric domains. Moreover, the blended films are highly transparent in the optical region. Therefore, thin films of these binary blends are good candidates as host materials for nonlinear optical applications.

Local order of Pb1-xLaxZr0.40Ti 0.60O3 ferroelectric ceramic materials probed by X-ray absorption and Raman spectroscopies

This paper reports on the structural characterization of Pb 1-xLaxZr0.40Ti0.60O3 (PLZT) ferroelectric ceramic compositions prepared by the conventional solid state reaction method. X-ray absorption spectroscopy (XAS) and Raman spectroscopy were used to probe the local structure of PLZT samples that exhibits a normal and relaxor ferroelectric behavior. From the Zr K-edge and Pb LIII-edge EXAFS spectra, a considerable dissymmetry of Zr and Pb sites was observed in all samples, including those showing a long-range order cubic symmetry and a relaxor behavior. The Raman spectroscopy results confirmed the existence of a local disorder in all PLZT samples through the observation of Raman active vibrational modes. The variation in the intensity of the E(TO 3) mode in the PLZT relaxor samples indicates that the process of correlation between nanodomains stabilizes at temperatures lower than T m. © 2013 Elsevier B.V. All rights reserved.

The effect of barium substitution on the ferroelectric properties of Sr2 Nb2 O7 Ceramics

This work revealed that the solid solution compounds of Sr 2-xBaxNb2O7 are promising lead-free materials for high-temperature piezoelectric sensor application. These compounds were confirmed as ferroelectric materials with high Curie points (> 900°C) by their piezoelectric activity after poling, ferroelectric domain switching in their P-E hysteresis loops and thermal depoling behavior. The effect of Ba substitution on the structure and properties of Sr 2-xBaxNb2O7 (x < 1.0) was investigated. The solid solution limit of Sr2-xBaxNb 2O7 was determined by XRD as x < 0.6. The a-, b-, c- axes, and cell volume increase with Ba addition. The textured ceramics of Sr2-xBaxNb2O7 were prepared for the first time. The highest d33 was measured as 3.6 ± 0.1 pC/N for Sr1.8Ba0.2Nb2O7. © 2012 The American Ceramic Society.

Synthesis and Characterization of Nanostructured Electro-active Materials

Thesis (Ph.D.)--University of Washington, 2016-08

Direct visualization of magnetic-field-induced magnetoelectric switching in multiferroic Aurivillius phase thin films

Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters could provide a means for data storage whereby bits could be written electrically and read magnetically, or vice versa. Thin films of Aurivillius phase Bi6Ti2.8Fe1.52Mn0.68O18, previously prepared by a chemical solution deposition (CSD) technique, are multiferroics demonstrating magnetoelectric coupling at room temperature. Here, we demonstrate the growth of a similar composition, Bi6Ti2.99Fe1.46Mn0.55O18, via the liquid injection chemical vapor deposition technique. High-resolution magnetic measurements reveal a considerably higher in-plane ferromagnetic signature than CSD grown films (MS = 24.25 emu/g (215 emu/cm3), MR = 9.916 emu/g (81.5 emu/cm3), HC = 170 Oe). A statistical analysis of the results from a thorough microstructural examination of the samples, allows us to conclude that the ferromagnetic signature can be attributed to the Aurivillius phase, with a confidence level of 99.95%. In addition, we report the direct piezoresponse force microscopy visualization of ferroelectric switching while going through a full in-plane magnetic field cycle, where increased volumes (8.6 to 14% compared with 4 to 7% for the CSD-grown films) of the film engage in magnetoelectric coupling and demonstrate both irreversible and reversible magnetoelectric domain switching.

Mechanical and electrical driving field induced high-frequency dielectric anomalies in ferroelectric systems

Polycrystalline or single-crystal ferroelectric materials present dielectric dispersion in the frequency range 100 MHz-1 GHz that has been attributed to a dispersive ( relaxation-like) mechanism as well as a resonant mechanism. Particularly in 'normal' ferroelectric materials, a dielectric response that is indistinguishable from dispersion or a resonance has been reported. Nevertheless, the reported results are not conclusive enough to distinguish each mechanism clearly. A detailed study of the dielectric dispersion phenomenon has been carried out in PbTiO3-based ferroelectric ceramics, with the composition Pb1-xLaxTiO3 (x = 0.15), over a wide range of temperatures and frequencies, including microwave frequencies. The dielectric response of La-modified lead titanate ferroelectric ceramics, in 'virgin' and poled states, has been investigated in the temperature and frequency ranges 300-450 K and 1 kHz-2 GHz, respectively. The results revealed that the frequency dependence of the dielectric anomalies, depending on the measuring direction with respect to the orientation of the macroscopic polarization, may be described as a general mechanism related to an 'over-damped' resonant process. Applying either a uniaxial stress along the measurement field direction or a poling electric field parallel and/or perpendicular to the measuring direction, a resonant response of the real and imaginary components of the dielectric constant is observed, in contrast to the dispersion behavior obtained in the absence of the stress, for the 'virgin' samples. Both results, resonance and/or dispersion, can be explained by considering a common mechanism involving a resonant response (damped and/or over-damped) which is strongly affected by a ferroelastic-ferroelectric coupling, contributing to the low-field dielectric constant.

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Investigation of Ferroelectric Layered Perovskite Barium Bismuth Tantalate Prepared by Solid-State Reaction

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical properties of a composite of Polyurethane and ferroelectric ceramics

Ferroelectric ceramic particles based on lead titanate zirconate (PZT) were dispersed in a polymer matrix based on castor oil. After the poling process, the pyroelectric activity of this composite was measured using a direct method in which a linear heating rate was applied to the pre-poled samples. The pyroelectric coefficient at 343 K is comparable with that of a PZT-poly(vinylidene fluoride) (PVDF) composite and significantly higher than that of PVDF. © 1998 Kluwer Academic Publishers.

Preparation and properties of ferroelectric BaTiO3 thin films produced by the polymeric precursor method

Ferroelectric barium titanate thin films were produced by the polymeric precursor method. In this technique, the desired metal cations are chelated in a solution using a hydroxycarboxylic acid as the chelating agent. Barium carbonate and titanium IV isopropoxide were used as precursors for the citrate solution. Ethylene glycol and citric acid were used as polymerization/complexation agents for the process. The crystalline structure of the film annealed at 700 °C had a single perovskite phase with a tetragonal structure. The BaTiO3 film showed good P-E hysteresis loops and C-V characteristics due to the switched ferroelectric domains.