Acoustic transport of charge and spins in GaAs-based heterostructures

Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of the Stanford University, USA, from 2010 to 2012. The objective of this project is the transport and control of electronic charge and spin along GaAs-based semiconductor heterostructures. The electronic transport has been achieved by taking advantage of the piezolectric field induced by surface acoustic waves in non-centrosymmetric materials like GaAs. This piezolectric field separates photogenerated electrons and holes at different positions along the acoustic wave, where they acummulate and are transported at the same velocity as the wave. Two different kinds of structures have been studied: quantum wells grown along the (110) direction, both intrinsic and n-doped, as well as GaAs nanowires. The analysis of the charge acoustic transport was performed by micro-photoluminescence, whereas the detection of the spin transport was done either by analyzing the polarization state of the emitted photoluminescence or by Kerr reflectometry. Our results in GaAs quantum wells show that charge and spin transport is clearly observed at the non-doped structures,obtaining spin lifetimes of the order of several nanoseconds, whereas no acoutically induced spin transport was detected for the n-doped quantum wells. In the GaAs nanowires, we were able of transporting successfully both electrons and holes along the nanowire axis, but no conservation of the spin polarization has been observed until now. The photoluminescence emitted by these structures after acoustic transport, however, shows anti-bunching characteristics, making this system a very good candidate for its use as single photon emitters.

Exchange bias between magnetoelectric YMnO3 and ferromagnetic SrRuO3 epitaxial films

Orthorhombic YMnO3 (YMO) epitaxial thin films were deposited on SrTiO3 (STO) single-crystal substrates. We show that the out-of-plane texture of the YMO films can be tailored using STO substrates having (001), (110), or (111) orientations. We report on the magnetic properties of the YMO(010) films grown on STO(001) substrates. The dependence of the susceptibility on the temperature indicates that the films are antiferromagnetic below the Néel temperature (around 35 K). Orthorhombic YMO(010) films were also deposited on an epitaxial buffer layer of ferromagnetic and metallic SrRuO3 (SRO). The magnetic hysteresis loops of SRO show exchange bias at temperatures below the Néel temperature of YMO. These results confirm that the YMO films are antiferromagnetic and demonstrate that magnetoelectric YMO can be integrated in functional epitaxial architectures.

Blue luminescence at room temperature in defective MgO films

Luminescence spectroscopy has been used to characterize MgO films prepared by rf-sputtering. A clear correlation is found between the appearance of an emission peak centered at approximately 460 nm and the detection of ferromagnetic ordering in the samples. We suggest that cationic vacancies are responsible for the blue-light emission by introducing p states into the electronic band-gap. In accordance with this, our results strongly indicate that cationic vacancies are at the heart of the appearance of long-range magnetic ordering in MgO films.

Highly textured Sr, Nb, co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf-sputtering

In this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

Resistance Switching in Transparent Magnetic MgO Films

We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.

Cationic and charge segregation in La2/3Ca1/3MnO3 thin films grown on (001) and (110) SrTiO3.

Electron energy-loss spectroscopy is used to map composition and electronic states in epitaxial La2/3Ca1/3MnO3 films grown on SrTiO3 001 and 110 substrates. It is found that in partially relaxed 110 films cationic composition and valence state of Mn3+/4+ ions are preserved across the film thickness. In contrast, in fully strained 001 films, the Ca/La ratio gradually changes across the film, being La rich at film/substrate interface and La depleted at free surface; Mn valence state changes accordingly. These observations suggest that a strongly orientation-dependent adaptative composition mechanism dominates stress accommodation in manganite films and provides microscopic understanding of their dissimilar magnetic properties.

Ferromagnetism in transparent thin films of MgO

We show both theoretical and experimental evidences of the appearance of ferromagnetism in MgO thin films. First-principles calculations allow predicting the possibility of the formation of a local moment in MgO, provided the existence of Mg vacancies which create holes on acceptor levels near the O 2p-dominated valence band. Magnetic measurements evidence of the existence of room-temperature ferromagnetism in MgO thin films. High-resolution transmission electron microscopy demonstrates the existence of cation vacancies in our samples. Finally, by applying the element specificity of the x-ray magnetic circular dichroism technique, we also demonstrate that the magnetic moments of the system arise from the spin polarization of the 2p electrons of oxygen atoms surrounding Mg vacancies.

Transporte dependiente de espín en estructuras de magnetorresistencia gigante con capas delgadas de gadolinio

La investigación realizada en este trabajo de tesis se ha centrado en la caracterización y optimización del sistema Fe/Gd/Fe y en el estudio de su efecto en el transporte dependiente de espín y en la transferencia de espín (STT) en dispositivos magnéticos. El fenómeno de STT, uno de los grandes descubrimientos de la espintrónica, se basa en la transferencia de momento angular de una corriente polarizada de espín a la imanación local de un material magnético. Este efecto se traduce en que una corriente polarizada de espín puede provocar variaciones en la imanación del material sin necesidad de campo magnético aplicado. Este fenómeno necesita una densidad de corriente muy alta, de manera que sus efectos solo se observan en dispositivos de tamaño nanométrico a partir de la llamada densidad de corriente crítica. El STT tiene un gran potencial tecnológico para distintas aplicaciones, como emisores de radiofrecuencia para comunicación in-chip o memorias magnéticas alternativas, en que se podría leer y escribir la información únicamente mediante corriente, sin necesidad de aplicar campo magnético ni utilizar bobinas de detección. Desde el punto de vista de este tipo de aplicaciones hay un gran interés en disminuir la densidad de corriente crítica a la que empieza a observarse el efecto. Sin embargo, hay otro tipo de dispositivos en que el STT supone un problema o factor limitante. Este es el caso de las cabezas lectoras de ordenador, en las que a partir de la densidad de corriente crítica aparece ruido e inestabilidad adicional en la señal inducidos por STT, lo que limita su sensibilidad. Para este tipo de aplicación, se desea por tanto que la corriente crítica a partir de la cual aparece ruido e inestabilidad adicional en la señal sea tan grande como sea posible. El Gd (y especialmente el sistema Fe/Gd/Fe) tiene unas características muy particulares con potencial para afectar varias propiedades relacionadas con la densidad de corriente crítica de un dispositivo de STT. Por este motivo, resulta interesante introducir la tricapa Fe/Gd/Fe en la capa libre de este tipo de dispositivos y estudiar cómo afecta a su estabilidad. Para ello, una primera parte del trabajo se ha centrado en la exhaustiva caracterización del sistema Fe/Gd/Fe y la optimización de sus propiedades de cara a su introducción en la capa libre de dispositivos de STT. Por otro lado, la intención final es alterar o controlar el efecto de transferencia de espín en un dispositivo afectando lo menos posible al resto de las propiedades intrínsecas de su funcionamiento (por ejemplo, al valor de su magnetorresistencia). Por tanto, ha sido necesario estudiar los efectos del sistema Fe/Gd/Fe en el transporte de espín y determinar la manera de introducir la tricapa en el dispositivo optimizando el resto de sus propiedades o afectándolas lo menos posible. Finalmente, hemos introducido el sistema Fe/Gd/Fe en la capa libre de nanodispositivos y hemos estudiado su efecto en la corriente crítica de inestabilidad por STT. Los resultados muestran que estas tricapas Fe/Gd/Fe pueden suponer una solución potencial para los problemas de estabilidad de algunos nanodispositivos magnéticos como las cabezas lectoras magnéticas.

Spin injection in two-dimensional layered materials and local magnetoresistance side-effects

180 p.