Experimental Observation Of Electrical Instability Of Droplets On Dielectric Layer

Polydimethylsiloxane ( PDMS) has become the most widely used silicon-based organic polymer in bio-MEMS/NEMS devices. However, the inherent hydrophobic nature of PDMS hinders its wide applications in bio-MEMS/NEMS for efficient transport of liquids. Electrowetting is a useful tool to reduce the apparent contact angle of partially wetting conductive liquids and has been utilized widely in bio-MEMS/NEMS. Our experimental results show that the thin PDMS membranes exhibit good properties in electrowetting-on-dielectric. The electrical instability phenomenon of droplets was observed in our experiment. The sessile droplet lying on the PDMS membrane will lose its stability with the touch of the wire electrode to make the apparent contact angle change suddenly larger than 35 degrees. Contact mode can protect the dielectric layer from electrical breakdown effectively. Electrical breakdown process of dielectric layer was recorded by a high speed camera. It is found experimentally that a PDMS membrane of 4.8 mu m thick will not be destroyed due to the electric breakdown even at 800 V in the contact mode.

Influence of Filler Loading on Dielectric Properties of Epoxy-ZnO Nanocomposites

Experimental investigations into the dielectric properties of epoxy-ZnO nanocomposites at different filler loadings reveal few unique behaviors (at certain filler loadings) and also advantageous characteristics in contrast to the properties obtained for the corresponding microcomposites. Results demonstrate that in nanocomposites, it is possible to achieve lower values of permittivity and tan delta with respect to unfilled epoxy over a wide frequency range. Analysis of the results attributes this interesting observation to the interaction dynamics between the epoxy chains and the ZnO nanoparticles at the interfacial area. The dc volume resistivities and ac dielectric strengths of nanocomposites were also experimentally determined in the present study and the obtained characteristics are found to be different as compared to the results obtained for microcomposites. The volume fraction and nature of the interfaces in the bulk of the composites seem to influence this difference in the examined dielectric properties of the nanocomposites.

Studies on dielectric behavior of insulator-conductor composites

This paper describes the dielectric behavior of an insulator-conductor composite, namely, the wax-graphite composite. The variation of specific capacitance of these composites with parameters such as volume fraction and grain size of the conducting particles and temperature has been studied. These observed variations have been explained using the same model [C. Rajagopal and M. Satyam, J. Appl. Phys. 49, 5536 (1978)] which explains electrical conduction in composites. The specific capacitance of these materials appears to be governed by the contact capacitance between the conducting particles and the number of contacts each particle has with its neighbors. The variation of specific capacitance with temperature is attributed to the change in contact area.

Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500 degrees C. Ferroelectricity in Zn1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (T-c) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at T-c is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (P-s) and coercive field (E-c) of 0.6 mu C/cm(2) and 45 kV/cm were obtained for Zn0.85Li0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Studies on dielectric behavior of insulator‐conductor composites

This paper describes the dielectric behavior of an insulator‐conductor composite, namely, the wax‐graphite composite. The variation of specific capacitance of these composites with parameters such as volume fraction and grain size of the conducting particles and temperature has been studied. These observed variations have been explained using the same model [C. Rajagopal and M. Satyam, J. Appl. Phys. 49, 5536 (1978)] which explains electrical conduction in composites. The specific capacitance of these materials appears to be governed by the contact capacitance between the conducting particles and the number of contacts each particle has with its neighbors. The variation of specific capacitance with temperature is attributed to the change in contact area.

Effect of Gd3+ on dielectric and magnetic properties of Y3Fe5O12

The Gd3+ doped Y3-xGdxFe5O12 (x=0.0, 0.05, 0.15, and 0.25) nanopowders were prepared using modified sol-gel route. The structural characterizations such as X-ray diffraction, transmission electron microscopy has been carried out. The nanopowders were sintered at 700 degrees C/3 h. The lattice parameters and density of the samples were increased with an increase of Gd3+ concentration. The microstructure was analyzed using atomic force microscopy. The room temperature dielectric (epsilon' and epsilon `') and magnetic (mu' and mu `') properties were measured in the frequency range 5-50 GHz. with Gd3+ the dielectric properties were enhanced, but there is a decrease in the magnetic properties. The room temperature magnetization studies were carried out up to 1.5 T. the saturation and remnant magnetization were decreased with an increase of gadolinium concentration. These garnets have low permeability, low losses and a broad distribution of FMR line width which makes them a promising material for microwave devices can be used in the high frequency range i.e. up to 50 GHz. (C) 2013 Elsevier BM. All rights reserved.

Process induced electroactive beta-polymorph in PVDF: effect on dielectric and ferroelectric properties

The effects of various processing conditions, like annealing, poling, mechanical rolling and their combinations, on the dielectric and ferroelectric properties of PVDF poly(vinylidene fluoride)] were systematically studied in this work. Further, the effect of processing sequence on the structure and properties was investigated. While all the processing conditions adopted here resulted in phase transformation of the alpha- to electroactive beta-polymorph in PVDF, the fraction of beta-phase developed was observed to be strongly contingent on the adopted process. The transformation of alpha- to electroactive beta-polymorph was determined by X-ray diffraction and FTIR. The neat PVDF showed only beta-phase, whereas mechanically rolled samples exhibited the highest ca. 85% beta-phase in PVDF. Both the permittivity and the loss tangent decreased in the samples which had undergone different processing conditions. The polarization-electric field (P-E) loops for all the samples were evaluated. Interestingly, the energy density, estimated from the electrical displacement-electric field (D-E) loops, was observed to be highest for the poled samples which were initially rolled. The results indicate that various processing conditions can influence the dielectric and the ferroelectric properties differently.

Effect of Sm3+ on dielectric and magnetic properties of Y3Fe5O12 nanoparticles

The Sm3+ doped Y3-xSmxFe5O12 (x = 0-3) nanopowders were prepared using modified sol-gel route. The crystalline structure and morphology was confirmed by X-ray diffraction and atomic force microscopy. The nanopowders were sintered at 950 degrees C/90 min using microwave sintering method. The lattice parameters and density of the samples were increased with an increase of Sm3+ concentration. The room temperature dielectric (epsilon' and epsilon `') and magnetic (mu' and mu `') properties were measured in the frequency range up to 20 GHz. The room temperature magnetization studies were carried out using Vibrating sample magnetometer using filed of 1.5 T. Results of VSM show that the saturation and remnant magnetization of Y3-xSmxFe5O12 (0-3) decreases on increasing the Sm concentration (x). The low values of magnetic (mu' and mu `') properties makes them a good candidates for microwave devices, which can be operated in the high frequency range.

Effect of Ni-Zr codoping on dielectric and magnetic properties of SrFe12O19 via sol-gel route

Nanocrystalline strontium hexaferrites SrFe12-2x (Ni2+-Zr4+)(x)O-19] nanoparticles were successfully synthesized by sal gel process. For densification the powders were sintered at 950 degrees C/4 h. The sintered samples were characterized by X-ray diffraction (XRD), surface area measurement, and field emission scanning electron microscope (FESEM). The lattice parameter a is almost constant but c increased with x upto 0.8 and then decreased. The frequency dependent complex permittivity (epsilon and epsilon `' and permeability (mu' and mu `') and magnetic properties such as saturation magnetization (M-s), coercive field (H-c) were studied. If is observed that saturation magnetization increased gradually from 57.82 emuig to 67.2 emufg as x increased from 0.2 to 0.4 and then decreased from 672 emufg to 31.63 ernufg for x=1.0. In present study, x=0.4 shows high value of M-s 67.2 emu/g. The real part of permittivity (epsilon') remains constant upto a frequency 1 GHz and increases further with an increase of frequency, a resonance and anti resonance peak was observed above 1 GHz for all the samples. In real part of permeability (mu') the relaxation frequency is observed above 1 GHz for all the samples and it is attributed to the domain wall motion. It is well known that the permeability for polycrystalline ferrites can be described as the superposition of two different magnetizing mechanisms: spin rotation and domain wall motion. These low coercive strontium hexaferrites are suitable for magnetic recording applications in hard disks, floppy disks, video tapes, etc. (C) 2015 Elsevier B.V. All rights reserved.

Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3-0.23PbTiO3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

The Nonlinear Phenomena Of Thin Polydimethylsiloxane (Pdms) Films In Electrowetting

Electrowetting (EW) is an effective way to manipulate small volume liquid in micro- and nano-devices, for it can improve its wettability. Since the late 1990s, electrowetting-on-dielectric (EWOD) has been used widely in bio-MEMS, lab-on-a-chip, etc. Polydimethlsiloxane (PDMS) is extensively utilized as base materials in the fabrication of biomedical micro- and nano-devices. The properties of thin PDMS films used as dielectric layer in EW are studied in this paper. The experimental results show that the thin PDMS films exhibit good properties in EWOD. As to PDMS films with different thicknesses, a threshold voltage and a hysteresis were observed in the EIWOD experiments.

Electrowetting On A Lotus Leaf

Electrowetting on dielectrics has been widely used to manipulate and control microliter or nanoliter liquids in micro-total-analysis systems and laboratory on a chip. We carried out experiments on electrowetting on a lotus leaf, which is quite different from the equipotential plate used in conventional electrowetting. This has not been reported in the past. The lotus leaf is superhydrophobic and a weak conductor, so the droplet can be easily actuated on it through electrical potential gradient. The capillary motion of the droplet was recorded by a high-speed camera. The droplet moved toward the counterelectrode to fulfill the actuation. The actuation speed could be of the order of 10 mm/s. The actuation time is of the order of 10 ms.

Electrowetting on a lotus leaf

Electrowetting on dielectrics has been widely used to manipulate and control microliter or nanoliter liquids in micro-total-analysis systems and laboratory on a chip. We carried out experiments on electrowetting on a lotus leaf which is quite different from the equipotential plate used in conventional electrowetting. This has not been reported in the past. The lotus leaf is superhydrophobic and a weak conductor so the droplet can be easily actuated on it through electrical potential gradient. The capillary motion of the droplet was recorded by a high-speed camera. The droplet moved toward the counterelectrode to fulfill the actuation. The actuation speed could be of the order of 10 mm/s. The actuation time is of the order of 10 ms.