Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

Synthesis, photophysical properties, and theoretical studies on pyrrole-containing bromo Re(I) complex

Two bromo rhenium(I) carbonyl complexes with the formula of [Re(CO)(3)(L)Br], where L = 1,10-phenanthroline (Phen-Re) and 5-(1H-pyrrol-1-yl)-1,10-phenanthroline (Pyph-Re), were successfully synthesized with the aim to analyze the effect of the pyrrole (Py) moiety on the photophysical properties of Pyph-Re. It was found that the triplet metal-to-ligand charge-transfer d pi (Re) --> pi*(N-N) emission of Phen-Re and Pyph-Re centered at ca. 527 nm with the luminescence quantum yield (LQY) of 0.015 and ca. 578 nm with the LQY of 0.011, respectively. At the same time, the geometrical structures of the ground state and the absorption spectral properties of Phen-Re and Pyph-Re were also calculated with the 6-31G* basis set employed on C, H, N, O, and Br atoms, and LANL2DZ adopted on Re atom.

Blue light-emitting polymer with polyfluorene as the host and highly fluorescent 4-dimethylamino-1,8-naphthalimide as the dopant in the sidechain

The dopant/host concept, which is an efficient approach to enhance the electroluminescence (EL) efficiency and stability for organic light-emitting diodes (OLEDs) devices, has been applied to design efficient and stable blue light-emitting polymers. By covalently attaching 0.2 mol % highly fluorescent 4-dimethylamino-1,8-naphthalimide (DMAN) unit (photoluminescence quantum efficiency: Phi(PL)=0.84) to the pendant chain of polyfluorene, an efficient and colorfast blue light-emitting polymer with a dopant/host system and a molecular dispersion feature was developed. The single-layer device (indium tin oxide/PEDOT/polymer/Ca/Al) exhibited the maximum luminance efficiency of 6.85 cd/A and maximum power efficiency of 5.38 lm/W with the CIE coordinates of (0.15, 0.19). Moreover, no undesired long-wavelength green emission was observed in the EL spectra when the device was thermal annealed in air at 180 degrees C for 1 h before cathode deposition. These significant improvements in both efficiency and color stability are due to the charge trapping and energy transfer from polyfluorene host to highly fluorescent DMAN dopant in the molecular level.

Synthesis and high efficiency green light-emitting diode of a soluble polymer

A soluble polymer emitting green color with high efficiency was synthesized. Bright green electroluminescence devices, both single layer and multilayer, were fabricated. The luminous efficiency was improved dramatically. Carrier injection from the electrodes to the emissive layer and concomitant green electroluminescence from the emissive layer were observed. A luminance of 920 cd/m(2) and luminous efficiency of 5.35 1m/W were achieved at a drive voltage of 15 V for the multilayer device. (C) 1997 Elsevier Science S.A.

Complexos aniônicos contendo európio ou gandolínio e beta-dicetonas aplicados aos estudos foto e/ou eletroluminescentes de sólidos e filmes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Organic light emitting diodes with europium (III) emissive layers based on beta-diketonate complexes: The influence of the central ligand

This work shows a comparative study of organic light emitting diodes based on four different europium complexes with the general formula, Eu(CLs)(3)bipyridine, where the central ligands are DBM [tris(dibenzoylmethane)], TTA [tris(1-(2-thieneyl)-4,4,4-trifluoro-1,3-butanedione)], NTA [tris(1-(2-naphthoyl)-3,3,3-trifluoroacetone)] and BTA [tris(1-(2-benzoyl)-3,3,3-trifluoroacetone)]. All devices have a driving voltage of 14-16 V, a very low electrical current at normal operation (less than 1 mA) and a good Wall Plug Efficiency (up to near 10(-3)%). The most suitable central ligand was found to be DBM, with an optical power up to 200 nW (at 612 nm). The BTA exhibits the lowest stability under high applied voltages. The other central ligands have similar results among them. The electroluminescence spectra clearly show the europium ion transitions (with a strong (5)D(0) -> (7)F(2) line) with a CIE color coordinate around (0.56, 0.34). (C) 2008 Elsevier B.V. All rights reserved.

Synthesis and Solar Cell Application of New Alternating Donor-Acceptor Copolymers Based on Variable Units of Fluorene, Thiophene, and Phenylene

A new series of donor acceptor copolymers were synthesized via the Witting route and applied as an active layer in organic thin-films solar cells. These copolymers are composed of fluorene thiophene and phenylene thiophene units. The ratio between those was systematically varied, and copolymers containing 0%, 50%, and 75% of phenylene thiophene were characterized and evaluated when used in photovoltaic devices. The copolymers' composition, photophysical, electrical, and morphological properties are addressed and correlated with device performance. The 50% copolymer ratio was found to be the best copolymer of the series, yielding a power conversion efficiency (PCE) under air mass (AM) 1.5 conditions of 2.4% in the bilayer heterojunction with the C-60 molecule. Aiming at flexible electronics applications, solutions based on the heterojunction of this copolymer with PCBM (6,6-phenyl-C-61-butyric acid methyl ester) were also successfully deposited using an inkjet printing method and used as an active layer in solar cells.

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis of the EL intensity distribution, the current density distribution under a certain current bias and the sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation of the current density distribution is employed to a GaInP cell, which agrees very well with the experimental results. A reciprocity theorem for current spreading is found and used to interpret the EL images from the viewpoint of current extraction. The optimization of front electrodes is discussed based on the results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431390]

Photovoltaic and electroluminescence characters in hybrid ZnO and conjugated polymer bulk heterojunction devices

We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3', 7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) bulk heterojuriction photovoltaic cells. Photolummescence quenching experimental results indicate that the ultra,fast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity about 1.2 eV greater than that of MDMO-PPV. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electroluminescence action due to the fact that the back transfer effect can be observed in the ZnO:MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO:MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.

Highly efficient red electroluminescence from stacked organic light-emitting devices based on a europium complex

Stacked organic light-emitting devices (OLEDs) based on a europium complex Eu(TTA)(3) (Tmphen) (TTA = thenoyltrifluoroacetone,Tmphen = 3,4,7,8-tetramethyl-1,10-phenanthroline) were fabricated. In this stacked OLEDs, Li:BCP/V2O5 was used the intermediate charge generation layer sandwiched between two identical emissive units consisting of TPD/CBP:DCJTB:Eu(TTA)(3)(Tmphen)/BCP. As expected, the brightness and electroluminescent (EL) current efficiency were approximately enhanced by double times that of conventional single-unit devices. The stacked OLEDs showed the maximum luminance up to 3000 cd/m(2) at a current density of 190 mA/cm(2) and a current efficiency of 14.5 cd/A at a current density of 0.08 mA/cm(2). At the brightness of 100 cd/m(2), the current efficiency reached 10 cd/A at a current density of 1.6 mA/cm2.

Photoluminesence and electroluminescence of the blue emission of devices based on poly(p-phenylenevinylene) copolymers

Bright blue polymer light-emitting diodes have been fabricated by using the poly(p-phenylenevinylene)-based copolymers with 10 C long aliphatic chains as the electroluminescent layers, PBD in PMMA and Alq(3) as the electron-transporting layers, and aluminum as the cathode. The multilayer structure devices show 190 cd/m(2) light-emitting brightness at 460 nm, 15 V turn-on vol- tage. It is found that the intensities of photoluminescence and electroluminescence (EL) increase with increasing aliphatic chain length, the EL intensity and operation stability of these polymer light-emitting diodes can be improved by reasonable design of the structure.

Studies on electroluminescence using Powder and thin film devices

The subject of electroluminescence has currently acquired great importance because of its potential applications in display systems of a wide variety. A large number of scientists working in commercial, governmental as well as academic institutions all over the world are at present engaged in the intense effort to develop new and efficient phosphor materials and electroluminescent devices. This thesis presents the work carried out by the author in this field during the past few years. The studies discussed in this thesis are mostly confined to the development of some new phosphor materials, their uses in powder and thin film electroluminescent devices and to their electrical and spectral characteristics. Care has been taken to bring' out the physics involved in all the above aspects of the phenomenon

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Electroluminescence from GaN-polymer heterojunction

Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved.

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.