OPTICAL BISTABILITY IN A GAAS/GAALAS MULTI-QUANTUM-WELL (MQW) SELF-ELECTROOPTIC EFFECT DEVICE (SEED)

Based on a GaAs/GaAlAs MQW pin structure grown by a home-made MBE system, we have successfully fabricated a SEED. The optical bistability and related properties of the device under symmetric operation (S-SEED) and asymmetric operation are reported.

Field-Effect and Frequency Dependent Transport in Semiconductor-Enriched Single-Wall Carbon Nanotube Network Device

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that uses facile fabrication techniques along with a small-ion as the gate electrolyte-and this is accomplished as a result of the semiconductor enhancement of the tubes. The optical transparency and electrical resistance of the device are modulated with gate voltage. A time-response study of the modulation of optical transparency and electrical resistance upon application of gate voltage suggests the percolative charge transport in the network. Also the ac response in the network is investigated as a function of frequency and temperature down to 5 K. An empirical relation between onset frequency and temperature is determined.

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Boolean logic device done with DFB laser diode

We present simulation results on how power output-input characteristic Instability in Distributed FeedBack -DFB semiconductor laser diode SLA can be employed to implemented Boolean logic device. Two configurations of DFB Laser diode under external optical injection, either in the transmission or in the reflective mode of operation, is used to implement different Optical Logic Cells (OLCs), called the Q- and the P-Device OLCs. The external optical injection correspond to two inputs data plus a cw control signal that allows to choose the Boolean logic function to be implement. DFB laser diode parameters are choosing to obtain an output-input characteristic with the values desired. The desired values are mainly the on-off contrast and switching power, conforming shape of hysteretic cycle. Two DFB lasers in cascade, one working in transmission operation and the other one in reflective operation, allows designing an inputoutput characteristic based on the same respond of a self-electrooptic effect device is obtained. Input power for a bit'T' is 35 uW(70uW) and a bit "0" is zero for all the Boolean function to be execute. Device control signal range to choose the logic function is 0-140 uW (280 uW). Q-device (P-device)

Adaptive Harmonic Elimination Technique in Single Phase PWM Inverters

High frequency PWM inverters produce an output voltage spectrum at the fundamental reference frequency and around the switching frequency. Thus ideally PWM inverters do not introduce any significant lower order harmonics. However, in real systems, due to dead-time effect, device drops and other non-idealities lower order harmonics are present. In order to attenuate these lower order harmonics and hence to improve the quality of output current, this paper presents an \emph{adaptive harmonic elimination technique}. This technique uses an adaptive filter to estimate a particular harmonic that is to be attenuated and generates a voltage reference which will be added to the voltage reference produced by the current control loop of the inverter. This would have an effect of cancelling the voltage that was producing the particular harmonic. The effectiveness and the limitations of the technique are verified experimentally in a single phase PWM inverter in stand-alone as well as g rid interactive modes of operation.

Diode laser pumped, KERR phase-shifting and switching of a diode laser signal in a small area optical fibre

In this paper authors report the first demonstration of a diode laser powered Kerr effect device, consisting of a single birefringent fiber, able to phase-shift and switch an optical signal generated by a second laser diode. They have obtained fast, stable phase-shifting of 90° in a single fiber, at a coupled pump power of only 20 mW. Using this phase shift to induce polarization switching with resultant gating, 25% modulation of the diode laser signal has been observed, with a detection limited-rise time of 10ns.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

Microwave curing of thermosetting polymer materials in microelectronics applications

Thermosetting polymer materials are widely utilised in modern microelectronics packaging technology. These materials are used for a number of functions, such as for device bonding, for structural support applications and for physical protection of semiconductor dies. Typically, convection heating systems are used to raise the temperature of the materials to expedite the polymerisation process. The convection cure process has a number of drawbacks including process durations generally in excess of 1 hour and the requirement to heat the entire printed circuit board assembly, inducing thermomechanical stresses which effect device reliability. Microwave energy is able to raise the temperature of materials in a rapid, controlled manner. As the microwave energy penetrates into the polymer materials, the heating can be considered volumetric – i.e. the rate of heating is approximately constant throughout the material. This enables a maximal heating rate far greater than is available with convection oven systems which only raise the surface temperature of the polymer material and rely on thermal conductivity to transfer heat energy into the bulk. The high heating rate, combined with the ability to vary the operating power of the microwave system, enables the extremely rapid cure processes. Microwave curing of a commercially available encapsulation material has been studied experimentally and through use of numerical modelling techniques. The material assessed is Henkel EO-1080, a single component thermosetting epoxy. The producer has suggested three typical convection oven cure options for EO1080: 20 min at 150C or 90 min at 140C or 120 min at 110C. Rapid curing of materials of this type using advanced microwave systems, such as the FAMOBS system [1], is of great interest to microelectronics system manufacturers as it has the potential to reduce manufacturing costs, increase device reliability and enables new device designs. Experimental analysis has demonstrated that, in a realistic chip-on-board encapsulation scenario, the polymer material can be fully cured in approximately one minute. This corresponds to a reduction in cure time of approximately 95 percent relative to the convection oven process. Numerical assessment of the process [2] also suggests that cure times of approximately 70 seconds are feasible whilst indicating that the decrease in process duration comes at the expense of variation in degree of cure within the polymer.

Towards Realization of Magnetocaloric and Magnetoelectric Applications based on Bulk and Thin film forms of Sodium substituted Lanthanum Manganites

The present thesis work focuses on hole doped lanthanum manganites and their thin film forms. Hole doped lanthanum manganites with higher substitutions of sodium are seldom reported in literature. Such high sodium substituted lanthanum manganites are synthesized and a detailed investigation on their structural and magnetic properties is carried out. Magnetic nature of these materials near room temperature is investigated explicitly. Magneto caloric application potential of these materials are also investigated. After a thorough investigation of the bulk samples, thin films of the bulk counterparts are also investigated. A magnetoelectric composite with ferroelectric and ferromagnetic components is developed using pulsed laser deposition and the variation in the magnetic and electric properties are investigated. It is established that such a composite could be realized as a potential field effect device. The central theme of this thesis is also on manganites and is with the twin objectives of a material study leading to the demonstration of a device. This is taken up for investigation. Sincere efforts are made to synthesize phase pure compounds. Their structural evaluation, compositional verification and evaluation of ferroelectric and ferromagnetic properties are also taken up. Thus the focus of this investigation is related to the investigation of a magnetoelectric and magnetocaloric application potentials of doped lanthanum manganites with sodium substitution. Bulk samples of sodium substituted lanthanum manganites. Bulk samples of sodium substituted lanthanum manganites with Na substitution ranging from 50 percent to 90 percent were synthesized using a modified citrate gel method and were found to be orthorhombic in structure belonging to a pbnm spacegroup. The variation in lattice parameters and unit cell volume with sodium concentration were also dealt with. Magnetic measurements revealed that magnetization decreased with increase in sodium concentrations.

Layer-by-Layer Assembly of Carbon Nanotubes Incorporated in Light-Addressable Potentiometric Sensors

The integration of carbon nanotubes in conjunction with a chemical or biological recognition element into a semiconductor field-effect device (FED) may lead to new (bio)chemical sensors. In this study, we present a new concept to develop field-effect-based sensors, using a light-addressable potentiometric sensor (LAPS) platform modified with layer-by-layer (LbL) films of single-walled carbon nanotubes (SWNTs) and polyamidoamine (PAMAM) dendrimers. Film growth was monitored for each layer adsorbed on the LAPS chip by Measuring current-voltage (IIV) curves. The morphology of the films was analyzed via atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), revealing the formation of a highly interconnected nanostructure of SWNTs-network into the dendrimer layers. Constant current (CC) Measurements showed that the incorporation of the PAMAM/SWNT LbL film containing LIP to 6 bilayers onto the LAPS Structure has a high pH sensitivity of ca. 58 mV/pH. The biosensing ability of the devices was tested for penicillin G via adsorptive immobilization of the enzyme penicillinase atop the LgL film. LAPS architectures modified with the LbL film exhibited higher sensitivity, ca. 100 mV/decade, in comparison to ca. 79 mV/decade for all unmodified LAPS, which demonstrates the potential application of the CNT-LbL Structure in field-effect-based (bio)chemical sensors.

Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

A study of the effects metal residues in poly(9,9-dioctylfluorene) have on field-effect transistor device characteristics

The amount of metal residues from organometallic reagents used in preparation of poly(9,9-dioctylfluorene) by palladium catalysed Suzuki and nickel-induced Yamamoto polycondensations have been determined, and their effect upon the behaviour of the polymer in field-effect transistors (FETs) has been measured. The metal levels from material polymerised by Suzuki method were found to be much higher than from that made by the Yamamoto procedure. Simple treatment of the polymers with suitable metal trapping reagents lowered the metal levels significantly, with EDTA giving best results for nickel and triphenylphosphine for palladium. Comparison of the behaviour of FETs using polyfluorenes with varying levels of metal contamination, showed that the metal residues have little effect upon the mobility values, but often affect the degree of hysteresis, possibly acting as charge traps. Satisfactory device performances were obtained from polymer with palladium levels of 2000 μg/g suggesting that complete removal of metal residues may not be necessary for satisfactory device performance.

Effect of organic gate dielectric material properties on interfacial charging and discharging of pentacene MIM device

The effect of material properties of an environmentally friendly, optically transparent dielectric material, polyterpenol, on the carrier transients within the pentacene-based double-layer MTM device was investigated. Polyterpenol films were RF plasma polymerised under varied process conditions, with resultant films differing in surface chemistry and morphology. Independent of type of polyterpenol, time-resolved EFISHG study of IZO/polyterpenol/pentacene/Au structures showed similar transient behaviour with carriers injected into pentacene from Au electrode only, confirming polyterpenol to be a suitable blocking layer for visualisation of single-species carrier transportation during charging and discharging under different bias conditions. Polyterpenol fabricated under higher input power show better promise due to higher chemical and thermal stability, improved uniformity, and absence of defects.