Métodos de coleta de deposição para ensaios de deriva em aplicações aéreas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Modeling bipolar power semiconductor devices gachovska

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.

Efficient 3D scene modeling and mosaicing

El modelat d'escenes és clau en un gran ventall d'aplicacions que van des de la generació mapes fins a la realitat augmentada. Aquesta tesis presenta una solució completa per a la creació de models 3D amb textura. En primer lloc es presenta un mètode de Structure from Motion seqüencial, a on el model 3D de l'entorn s'actualitza a mesura que s'adquireix nova informació visual. La proposta és més precisa i robusta que l'estat de l'art. També s'ha desenvolupat un mètode online, basat en visual bag-of-words, per a la detecció eficient de llaços. Essent una tècnica completament seqüencial i automàtica, permet la reducció de deriva, millorant la navegació i construcció de mapes. Per tal de construir mapes en àrees extenses, es proposa un algorisme de simplificació de models 3D, orientat a aplicacions online. L'eficiència de les propostes s'ha comparat amb altres mètodes utilitzant diversos conjunts de dades submarines i terrestres.

Existence of solutions and asymtptotic limits of the Euler-Poisson and the quantum drift-diffusion systems

My work concerns two different systems of equations used in the mathematical modeling of semiconductors and plasmas: the Euler-Poisson system and the quantum drift-diffusion system. The first is given by the Euler equations for the conservation of mass and momentum, with a Poisson equation for the electrostatic potential. The second one takes into account the physical effects due to the smallness of the devices (quantum effects). It is a simple extension of the classical drift-diffusion model which consists of two continuity equations for the charge densities, with a Poisson equation for the electrostatic potential. Using an asymptotic expansion method, we study (in the steady-state case for a potential flow) the limit to zero of the three physical parameters which arise in the Euler-Poisson system: the electron mass, the relaxation time and the Debye length. For each limit, we prove the existence and uniqueness of profiles to the asymptotic expansion and some error estimates. For a vanishing electron mass or a vanishing relaxation time, this method gives us a new approach in the convergence of the Euler-Poisson system to the incompressible Euler equations. For a vanishing Debye length (also called quasineutral limit), we obtain a new approach in the existence of solutions when boundary layers can appear (i.e. when no compatibility condition is assumed). Moreover, using an iterative method, and a finite volume scheme or a penalized mixed finite volume scheme, we numerically show the smallness condition on the electron mass needed in the existence of solutions to the system, condition which has already been shown in the literature. In the quantum drift-diffusion model for the transient bipolar case in one-space dimension, we show, by using a time discretization and energy estimates, the existence of solutions (for a general doping profile). We also prove rigorously the quasineutral limit (for a vanishing doping profile). Finally, using a new time discretization and an algorithmic construction of entropies, we prove some regularity properties for the solutions of the equation obtained in the quasineutral limit (for a vanishing pressure). This new regularity permits us to prove the positivity of solutions to this equation for at least times large enough.

(Table 1) Ice flux, polynya area and sea-ice drift speed in the Kara Sea during winter (Jan-Apr) 1997-2001

The Shelf Seas of the Arctic are known for their large sea-ice production. This paper presents a comprehensive view of the Kara Sea sea-ice cover from high-resolution numerical modeling and space-borne microwave radiometry. As given by the latter the average polynya area in the Kara Sea takes a value of 21.2 × 10**3 km**2 ± 9.1 × 10**3 km**2 for winters (Jan.-Apr.) 1996/97 to 2000/01, being as high as 32.0 × 10**3 km**2 in 1999/2000 and below 12 × 10**3 km**2 in 1998/99. Day-to-day variations of the Kara Sea polynya area can be as high as 50 × 10**3 km**2. For the seasons 1996/97 to 2000/01 the modeled cumulative winter ice-volume flux out of the Kara Sea varied between 100 km**3/a and 350 km**3/a. Modeled high (low) ice export coincides with a high (low) average and cumulative polynya area, and with a low (high) sea-ice compactness in the Kara Sea from remote sensing data, and with a high (low) sea-ice drift speed across its northern boundary derived from independent model data for the winters 1996/97 to 2000/01.

Modeling and simulation of bulk gallium nitride power semiconductor devices

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.